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1. 发明申请

US20070096080A1 Rectifying diodes 有权
标题翻译：整流二极管
公开(公告)号：US20070096080A1
公开(公告)日：2007-05-03
申请号：US10562004
申请日：2004-07-02
申请人： Paul Cain , Henning Sirringhaus , Anoop Menon , Catherine Ramsdale , Tim Werne
发明人： Paul Cain , Henning Sirringhaus , Anoop Menon , Catherine Ramsdale , Tim Werne
IPC分类号： H01L29/08 , H01L51/40
CPC分类号： H01L51/0583 , B82Y30/00 , H01L27/28 , H01L51/0004 , H01L51/0017 , H01L51/0021 , H01L51/0036 , H01L51/0037 , H01L51/0039 , H01L51/0043 , H01L51/0075 , H01L51/0579
摘要： A rectifying diode comprising a semiconducting layer, a first electrode, and a second electrode, wherein the width of the region of closest contact between the two electrodes is on the order of the thickness of the semiconducting layer.
摘要翻译：一种整流二极管，包括半导体层，第一电极和第二电极，其中两个电极之间最接近的区域的宽度为半导体层厚度的数量级。

2. 发明申请

US20070012950A1 Production of electronic devices 有权
公开(公告)号：US20070012950A1
公开(公告)日：2007-01-18
申请号：US10570264
申请日：2004-09-02
申请人： Paul Cain , Anoop Menon , Henning Sirringhaus , James Watts , Tim Werne , Thomas Brown
发明人： Paul Cain , Anoop Menon , Henning Sirringhaus , James Watts , Tim Werne , Thomas Brown
IPC分类号： H01L29/739
CPC分类号： B82Y10/00 , B82Y30/00 , H01L51/0004 , H01L51/0012 , H01L51/0021 , H01L51/0516 , H01L51/0541 , H01L51/0545
摘要： A method of producing a metal element of an electronic device on a substrate, including the steps of: forming a mixture of a material comprising metal atoms with a liquid, depositing the material from the liquid mixture onto a substrate, and then irradiating at least part of the deposited material with light to increase the electrical conductivity of the deposited material. A method of producing one or more elements of an electronic device, including the steps of: providing a substrate including one or more underlying elements of the electronic device and a thermally patternable layer overlying said one or more underlying elements; and using said one or more underlying elements to locally generate heat and thereby selectively induce a change in corresponding portions of said thermally patternable layer; and wherein either the change selectively induced in said corresponding portions directly results in the definition of one or more elements of the electronic device in a position determined by that of said one or more underlying elements, or alternatively including the additional step of using the change selectively induced in said one or more corresponding portions to facilitate the formation of one or more elements of the electronic device in a position determined by that of said one or more underlying elements. A method of producing an element of an electronic device, including the steps of: (a) providing a substrate; (b) depositing on said substrate a layer of a switchable material, which changes its physical or chemical properties upon irradiation with light or heating causing a change of its surface energy properties; (c) irradiatively inducing at selected regions of a layer of switchable material a change in physical or chemical properties that alters the surface energy of said selected regions and thereby forming a surface energy pattern on its surface; and (d) without removing said layer of switchable material in either irradiated selected regions or non-irradiated regions from the substrate depositing over the surface energy pattern produced in step (c) a material for forming an element of the electronic device such that the surface energy pattern controls the deposition of said material.

3. 发明授权

US07696090B2 Rectifying diodes with self-aligned electrodes 有权
标题翻译：用自对准电极整流二极管
公开(公告)号：US07696090B2
公开(公告)日：2010-04-13
申请号：US10562004
申请日：2004-07-02
申请人： Paul A. Cain , Henning Sirringhaus , Anoop Menon , Catherine Ramsdale , Tim Von Werne
发明人： Paul A. Cain , Henning Sirringhaus , Anoop Menon , Catherine Ramsdale , Tim Von Werne
IPC分类号： H01L21/441
CPC分类号： H01L51/0583 , B82Y30/00 , H01L27/28 , H01L51/0004 , H01L51/0017 , H01L51/0021 , H01L51/0036 , H01L51/0037 , H01L51/0039 , H01L51/0043 , H01L51/0075 , H01L51/0579
摘要： A rectifying diode comprising a semiconducting layer, a first electrode, and a second electrode, wherein the width of the region of closest contact between the two electrodes is on the order of the thickness of the semiconducting layer.
摘要翻译：一种整流二极管，包括半导体层，第一电极和第二电极，其中两个电极之间最接近的区域的宽度为半导体层厚度的数量级。

4. 发明授权

US08986793B2 Production of electronic devices 有权
公开(公告)号：US08986793B2
公开(公告)日：2015-03-24
申请号：US10570264
申请日：2004-09-02
申请人： Paul Cain , Anoop Menon , Henning Sirringhaus , James D. Watts , Tim Von Werne , Thomas M. Brown
发明人： Paul Cain , Anoop Menon , Henning Sirringhaus , James D. Watts , Tim Von Werne , Thomas M. Brown
IPC分类号： B05D3/00 , B82Y10/00 , B82Y30/00 , H01L51/00 , H01L51/05
CPC分类号： B82Y10/00 , B82Y30/00 , H01L51/0004 , H01L51/0012 , H01L51/0021 , H01L51/0516 , H01L51/0541 , H01L51/0545
摘要： A method of producing a metal element of an electronic device on a substrate, including the steps of: forming a mixture of a material comprising metal atoms with a liquid, depositing the material from the liquid mixture onto a substrate, and then irradiating at least part of the deposited material with light to increase the electrical conductivity of the deposited material. A method of producing one or more elements of an electronic device, including the steps of: providing a substrate including one or more underlying elements of the electronic device and a thermally patternable layer overlying said one or more underlying elements; and using said one or more underlying elements to locally generate heat and thereby selectively induce a change in corresponding portions of said thermally patternable layer; and wherein either the change selectively induced in said corresponding portions directly results in the definition of one or more elements of the electronic device in a position determined by that of said one or more underlying elements, or alternatively including the additional step of using the change selectively induced in said one or more corresponding portions to facilitate the formation of one or more elements of the electronic device in a position determined by that of said one or more underlying elements. A method of producing an element of an electronic device, including the steps of: (a) providing a substrate; (b) depositing on said substrate a layer of a switchable material, which changes its physical or chemical properties upon irradiation with light or heating causing a change of its surface energy properties; (c) irradiatively inducing at selected regions of a layer of switchable material a change in physical or chemical properties that alters the surface energy of said selected regions and thereby forming a surface energy pattern on its surface; and (d) without removing said layer of switchable material in either irradiated selected regions or non-irradiated regions from the substrate depositing over the surface energy pattern produced in step (c) a material for forming an element of the electronic device such that the surface energy pattern controls the deposition of said material.

5. 发明申请

US20080194056A1 Method of Producing Plurality of Organic Transistors Using Laser Patterning 有权
标题翻译：使用激光图案生产多种有机晶体管的方法
公开(公告)号：US20080194056A1
公开(公告)日：2008-08-14
申请号：US11910806
申请日：2006-04-03
申请人： Paul A. Cain , Carl Hayton , Anoop Menon , Thomas M. Brown
发明人： Paul A. Cain , Carl Hayton , Anoop Menon , Thomas M. Brown
IPC分类号： H01L21/02
CPC分类号： H01L51/0017 , H01L27/283 , H01L27/3262 , H01L27/3274 , H01L51/0021 , H01L51/0036 , H01L51/0037 , H01L51/0039 , H01L51/0043 , H01L51/0097 , H01L51/0541
摘要： A method of producing a plurality of transistors each including a source/drain electrode pair comprising a conductor material and a channel comprising semiconductor material between the source and drain electrodes of said source/drain electrode pair; the method comprising (i) forming over a substrate at least a first layer of said conductor material or a precursor thereto and a second layer of said semiconductor material or a precursor thereto; and (ii) thereafter removing selected portions of at least said first and second layers so as to define at least two adjacent source/drain electrode pairs that are unconnected to each other within said first and second layers.
摘要翻译：一种制造多个晶体管的方法，每个晶体管包括在所述源/漏电极对的源极和漏极之间包括导体材料的源/漏电极对和包括半导体材料的沟道; 所述方法包括（i）在衬底上形成至少第一层所述导体材料或其前体和第二层所述半导体材料或其前体; 以及（ii）此后移除至少所述第一和第二层的选定部分，以便限定在所述第一和第二层内彼此不连接的至少两个相邻的源/漏电极对。

6. 发明授权

US08349673B2 Method of producing plurality of organic transistors using laser patterning 有权
标题翻译：使用激光图案化制造多个有机晶体管的方法
公开(公告)号：US08349673B2
公开(公告)日：2013-01-08
申请号：US11910806
申请日：2006-04-03
申请人： Paul A. Cain , Carl Hayton , Anoop Menon , Thomas M. Brown
发明人： Paul A. Cain , Carl Hayton , Anoop Menon , Thomas M. Brown
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L51/0017 , H01L27/283 , H01L27/3262 , H01L27/3274 , H01L51/0021 , H01L51/0036 , H01L51/0037 , H01L51/0039 , H01L51/0043 , H01L51/0097 , H01L51/0541
摘要： A method of producing a plurality of transistors each including a source/drain electrode pair comprising a conductor material and a channel comprising semiconductor material between the source and drain electrodes of said source/drain electrode pair; the method comprising (i) forming over a substrate at least a first layer of said conductor material or a precursor thereto and a second layer of said semiconductor material or a precursor thereto; and (ii) thereafter removing selected portions of at least said first and second layers so as to define at least two adjacent source/drain electrode pairs that are unconnected to each other within said first and second layers.
摘要翻译：一种制造多个晶体管的方法，每个晶体管包括在所述源/漏电极对的源极和漏极之间包括导体材料的源/漏电极对和包括半导体材料的沟道; 所述方法包括（i）在衬底上形成至少第一层所述导体材料或其前体和第二层所述半导体材料或其前体; 以及（ii）此后移除至少所述第一和第二层的选定部分，以便限定在所述第一和第二层内彼此不连接的至少两个相邻的源/漏电极对。

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