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1. 发明授权

US07666465B2 Introducing nanotubes in trenches and structures formed thereby 失效
标题翻译：在由此形成的沟槽和结构中引入纳米管
公开(公告)号：US07666465B2
公开(公告)日：2010-02-23
申请号：US11026320
申请日：2004-12-29
申请人： Paul B. Fischer , Anne E. Miller , Kenneth C. Cadien , Chris E. Barns
发明人： Paul B. Fischer , Anne E. Miller , Kenneth C. Cadien , Chris E. Barns
IPC分类号： B05D1/00 , B05D1/04
CPC分类号： B82Y10/00 , B82Y30/00 , H01L51/0012 , H01L51/0048 , H01L51/0052 , Y10S977/72 , Y10T428/24562 , Y10T428/24612 , Y10T428/24744
摘要： Methods of forming a microelectronic structure are described. Embodiments of those methods include providing a substrate comprising at least one opening, and then applying a nanotube slurry comprising at least one nanotube to the substrate, wherein the at least one nanotube is substantially placed within the at least one opening.
摘要翻译：描述形成微电子结构的方法。这些方法的实施方案包括提供包含至少一个开口的基底，然后将包含至少一个纳米管的纳米管浆料施加到所述基底，其中所述至少一个纳米管基本上放置在所述至少一个开口内。

2. 发明授权

US06443814B1 Method and chemistry for cleaning of oxidized copper during chemical mechanical polishing 失效
公开(公告)号：US06443814B1
公开(公告)日：2002-09-03
申请号：US09962428
申请日：2001-09-24
申请人： Anne E. Miller , A. Daniel Feller , Kenneth C. Cadien
发明人： Anne E. Miller , A. Daniel Feller , Kenneth C. Cadien
IPC分类号： H01L21302
CPC分类号： B08B3/08 , C11D7/265 , C11D11/0029 , H01L21/02074 , Y10S134/902
摘要： Methods for the chemical-mechanical polishing (CMP) of copper layers on integrated circuits are described, along with the chemical compositions of various pre- and post-polishing solutions. In one embodiment, a pre-polish cleaning operation with a complexing organic acid buffer system is performed prior to the CMP of the copper. In alternative embodiments, a rinse operation is performed subsequent to the cleaning operation and prior to the CMP. In further alternatives, a post-polish cleaning operation with a chelating agent is performed. In still further alternatives, the pH of a pre-polish cleaner is ramped during the pre-polish cleaning operation to match the pH of the polish slurry which is used, subsequent to the cleaning operation, to remove excess portions of the copper layer to be polished.

3. 发明授权

US06464568B2 Method and chemistry for cleaning of oxidized copper during chemical mechanical polishing 失效
公开(公告)号：US06464568B2
公开(公告)日：2002-10-15
申请号：US09729609
申请日：2000-12-04
申请人： Anne E. Miller , A. Daniel Feller , Kenneth C. Cadien
发明人： Anne E. Miller , A. Daniel Feller , Kenneth C. Cadien
IPC分类号： H01L21302
CPC分类号： B08B3/08 , C11D7/265 , C11D11/0029 , H01L21/02074 , Y10S134/902
摘要： Methods for the chemical-mechanical polishing (CMP) of copper layers on integrated circuits are described, along with the chemical compositions of various pre- and post-polishing solutions. In one embodiment, a pre-polish cleaning operation with a complexing organic acid buffer system is performed prior to the CMP of the copper. In alternative embodiments, a rinse operation is performed subsequent to the cleaning operation and prior to the CMP. In further alternatives, a post-polish cleaning operation with a chelating agent is performed. In still further alternatives, the pH of a pre-polish cleaner is ramped during the pre-polish cleaning operation to match the pH of the polish slurry which is used, subsequent to the cleaning operation, to remove excess portions of the copper layer to be polished.

4. 发明授权

US06740591B1 Slurry and method for chemical mechanical polishing of copper 有权
标题翻译：铜的化学机械抛光的浆料和方法
公开(公告)号：US06740591B1
公开(公告)日：2004-05-25
申请号：US09715282
申请日：2000-11-16
申请人： Anne E. Miller , A. Daniel Feller , Kenneth C. Cadien
发明人： Anne E. Miller , A. Daniel Feller , Kenneth C. Cadien
IPC分类号： H01L21302
CPC分类号： C09G1/02 , C23F3/00 , H01L21/7684
摘要： A copper polish slurry, for chemical mechanical polishing of copper and copper diffusion barriers may be formed by combining a chelating, organic acid buffer system such as citric acid and potassium citrate; and an abrasive, such as for example colloidal silica. Alternative copper polish slurries, in accordance with the present invention, may be formed by further combining an oxidizer, such as hydrogen peroxide, and/or a corrosion inhibitor such as benzotriazole. Advantageous properties of slurries in accordance with the present invention include the enhancement of Cu removal rates to >3000 angstroms per minute. This high polish rate is achieved while maintaining local pH stability and substantially reducing global and local corrosion as compared to prior art copper polish slurries. Local pH stability provides for reduced within-wafer non-uniformity and reduced corrosion defects. Furthermore, copper diffusion barriers such as tantalum or tantalum nitride may also be polished with such slurries wherein the oxidizer is not included.
摘要翻译：用于化学机械抛光铜和铜扩散阻挡层的铜抛光浆可以通过将螯合的有机酸缓冲体系如柠檬酸和柠檬酸钾组合而形成; 和研磨剂，例如胶体二氧化硅。可以通过进一步组合氧化剂如过氧化氢和/或腐蚀抑制剂如苯并三唑来形成根据本发明的替代性铜抛光浆料。根据本发明的浆料的有利特性包括将Cu去除率提高到每分钟3000埃。与现有技术的铜抛光浆相比，实现了高抛光速率，同时保持局部pH稳定性并显着降低全局和局部腐蚀。局部pH稳定性提供减少的晶片内不均匀性和减少的腐蚀缺陷。此外，也可以使用不包括氧化剂的这种浆料来抛光诸如钽或氮化钽的铜扩散阻挡层。

5. 发明授权

US06719614B2 Method and chemistry for cleaning of oxidized copper during chemical mechanical polishing 有权
标题翻译：化学机械抛光过程中氧化铜的清洗方法和化学
公开(公告)号：US06719614B2
公开(公告)日：2004-04-13
申请号：US10044378
申请日：2002-01-09
申请人： Anne E. Miller , A. Daniel Feller , Kenneth C. Cadien
发明人： Anne E. Miller , A. Daniel Feller , Kenneth C. Cadien
IPC分类号： B24B100
CPC分类号： B08B3/08 , C11D7/265 , C11D11/0029 , H01L21/02074 , Y10S134/902
摘要： Methods for the chemical-mechanical polishing (CMP) of copper layers on integrated circuits are described, along with the chemical compositions of various pre- and post-polishing solutions. In one embodiment, a pre-polish cleaning operation with a complexing organic acid buffer system is performed prior to the CMP of the copper. In alternative embodiments, a rinse operation is performed subsequent to the cleaning operation and prior to the CMP. In further alternatives, a post-polish cleaning operation with a chelating agent is performed. In still further alternatives, the pH of a pre-polish cleaner is ramped during the pre-polish cleaning operation to match the pH of the polish slurry which is used, subsequent to the cleaning operation, to remove excess portions of the copper layer to be polished.
摘要翻译：描述了集成电路上铜层的化学机械抛光（CMP）的方法以及各种前抛光和后抛光溶液的化学组成。在一个实施方案中，在铜的CMP之前进行具有络合的有机酸缓冲体系的预抛光清洗操作。在替代实施例中，在清洁操作之后和CMP之前执行冲洗操作。在另外的替代方案中，进行具有螯合剂的后抛光清洁操作。在另外的替代方案中，预擦洗清洁剂的pH在预擦洗清洁操作期间倾斜以匹配在清洁操作之后使用的抛光浆料的pH，以将多余的铜层除去以除去抛光

6. 发明授权

US06752844B2 Ceric-ion slurry for use in chemical-mechanical polishing 有权
标题翻译：用于化学机械抛光的铈离子浆料
公开(公告)号：US06752844B2
公开(公告)日：2004-06-22
申请号：US09280268
申请日：1999-03-29
申请人： Anne E. Miller , A. Daniel Feller , Kenneth C. Cadien
发明人： Anne E. Miller , A. Daniel Feller , Kenneth C. Cadien
IPC分类号： C09C168
CPC分类号： C09G1/02 , C09K3/1463 , C23F3/00 , H01L21/3212
摘要： The invention provides a chemical-mechanical polishing slurry comprising a liquid, cerium ions as an oxidizer, an abrasive, and a pH increasing substance. The cerium ions are in the liquid in a quantity equal to the inclusion of at least 0.02 molar ammonium cerium nitrate in the liquid. The abrasive is also included in the liquid. The liquid, the cerium ions and the abrasive jointly have a first pH value. The pH increasing substance increases the first pH value to a second pH value above 1.5.
摘要翻译：本发明提供了一种化学机械抛光浆料，其包含液体，铈离子作为氧化剂，研磨剂和pH增加物质。铈离子在液体中的量等于在液体中包含至少0.02摩尔硝酸铈铵。磨料也包括在液体中。液体，铈离子和研磨剂共同具有第一pH值。 pH增加物质将第一个pH值提高到高于1.5的第二个pH值。

7. 发明授权

US5611943A Method and apparatus for conditioning of chemical-mechanical polishing pads 失效
标题翻译：用于调节化学机械抛光垫的方法和装置
公开(公告)号：US5611943A
公开(公告)日：1997-03-18
申请号：US536467
申请日：1995-09-29
申请人： Kenneth C. Cadien , Leopoldo D. Yau
发明人： Kenneth C. Cadien , Leopoldo D. Yau
IPC分类号： B24B37/04 , B24B29/00
CPC分类号： B24B37/042 , B24B53/017
摘要： A method and apparatus for conditioning and/or rinsing a pad in a chemical-mechanical polisher. A scoring apparatus is rotated about its center directly over the polishing pad of the chemical-mechanical polisher. The scoring apparatus scores the pad surface while rotating above the pad. Consequently the pad is conditioned in a uniform and concentric fashion.
摘要翻译：用于在化学机械抛光机中调节和/或漂洗垫的方法和装置。刻痕设备围绕其中心旋转直接在化学机械抛光机的抛光垫上。评分装置在垫上方旋转时评分垫表面。因此，垫以均匀和同心的方式调节。

8. 发明授权

US5340370A Slurries for chemical mechanical polishing 失效
标题翻译：用于化学机械抛光的浆料
公开(公告)号：US5340370A
公开(公告)日：1994-08-23
申请号：US146923
申请日：1993-11-03
申请人： Kenneth C. Cadien , Daniel A. Feller
发明人： Kenneth C. Cadien , Daniel A. Feller
IPC分类号： C09G1/02 , C09K3/14 , H01L21/321 , H01L21/768 , C23F1/44 , B44C1/22
CPC分类号： H01L21/76843 , C09G1/02 , C09K3/1463 , H01L21/3212 , H01L21/7684
摘要： Novel slurries for the chemical mechanical polishing of thin films used in integrated circuit manufacturing. A tungsten slurry of the present invention comprises an oxidizing agent, such as potassium ferricyanide, an abrasive such as silica, and has a pH between two and four. The tungsten slurry of the present invention can be used in a chemical mechanical planarization process to polish back a blanket deposited tungsten film to form plugs or vias. The tungsten slurry can also be used to polish copper, tungsten silicide, and titanium nitride. A second slurry, which is a 9:1 dilution of the tungsten slurry is ideal for chemical mechanical polishing of titanium nitride films. A third slurry of the present invention comprises a fluoride salt, an abrasive such as silica and has a pH.ltoreq.8. The third slurry can be used to polish titanium films.
摘要翻译：用于集成电路制造中使用的薄膜的化学机械抛光的新型浆料。本发明的钨浆料包含氧化剂，例如铁氰化钾，研磨剂如二氧化硅，并且pH在2和4之间。本发明的钨浆料可用于化学机械平面化处理以抛光覆盖沉积的钨膜以形成塞子或通孔。钨浆料也可用于抛光铜，硅化钨和氮化钛。对于氮化钛膜的化学机械抛光，第二种浆料是9：1稀释的钨浆料。本发明的第三种浆料包含氟化物盐，研磨剂如二氧化硅，并具有pH = 8。第三种浆料可用于抛光钛膜。

9. 发明授权

US5954975A Slurries for chemical mechanical polishing tungsten films 失效
标题翻译：化学机械抛光钨膜的浆料
公开(公告)号：US5954975A
公开(公告)日：1999-09-21
申请号：US796962
申请日：1997-02-07
申请人： Kenneth C. Cadien , Daniel A. Feller
发明人： Kenneth C. Cadien , Daniel A. Feller
IPC分类号： C09G1/02 , C09K3/14 , H01L21/321 , H01L21/768 , H01L21/304
CPC分类号： H01L21/76843 , C09G1/02 , C09K3/1463 , H01L21/3212 , H01L21/7684
摘要： Novel slurries for the chemical mechanical polishing of thin films used in integrated circuit manufacturing. A tungsten slurry of the present invention comprises an oxidizing agent, such as potassium ferricyanide, an abrasive such as silica, and has a pH between two and four. The tungsten slurry of the present invention can be used in a chemical mechanical planarization process to polish back a blanket deposited tungsten film to form plugs or vias. The tungsten slurry can also be used to polish copper, tungsten silicide, and titanium nitride. A second slurry, which is a 9:1 dilution of the tungsten slurry is ideal for chemical mechanical polishing of titanium nitride films. A third slurry of the present invention comprises a fluoride salt, an abrasive such as silica and has a pH.ltoreq.8. The third slurry can be used to polish titanium films.
摘要翻译：用于集成电路制造中使用的薄膜的化学机械抛光的新型浆料。本发明的钨浆料包含氧化剂，例如铁氰化钾，研磨剂如二氧化硅，并且pH在2和4之间。本发明的钨浆料可用于化学机械平面化处理以抛光覆盖沉积的钨膜以形成塞子或通孔。钨浆料也可用于抛光铜，硅化钨和氮化钛。对于氮化钛膜的化学机械抛光，第二种浆料是9：1稀释的钨浆料。本发明的第三种浆料包含氟化物盐，研磨剂如二氧化硅，并具有pH = 8。第三种浆料可用于抛光钛膜。

10. 发明授权

US5604158A Integrated tungsten/tungsten silicide plug process 失效
标题翻译：集成钨/硅化钨插件工艺
公开(公告)号：US5604158A
公开(公告)日：1997-02-18
申请号：US632751
申请日：1996-04-16
申请人： Kenneth C. Cadien , Srinivasam Sivaram
发明人： Kenneth C. Cadien , Srinivasam Sivaram
IPC分类号： H01L21/768 , H01L21/44
CPC分类号： H01L21/76843 , H01L21/7684 , H01L21/76877
摘要： A method of filling an opening in an insulating layer of an integrated circuit. First a tungsten-silicide layer is deposited over the opening. Next a tungsten layer is deposited onto the tungsten-silicide layer such that the opening is substantially filed with tungsten. The tungsten and tungsten-silicide layer are then chemically-mechanically polished back until the insulating layer is substantially revealed.
摘要翻译：一种填充集成电路绝缘层中的开口的方法。首先将硅化钨层沉积在开口上。接下来，钨层沉积在硅化钨层上，使得开口基本上覆盖有钨。然后将钨和硅化钨层进行化学机械抛光，直到基本上露出绝缘层。

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