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    • 9. 发明申请
    • Semiconductor structures formed on substrates and methods of manufacturing the same
    • 在基板上形成的半导体结构及其制造方法
    • US20070020884A1
    • 2007-01-25
    • US11189163
    • 2005-07-25
    • Qi WangMinhua LiJeffrey Rice
    • Qi WangMinhua LiJeffrey Rice
    • H01L21/30H01L21/46
    • H01L21/76251H01L21/2007H01L21/6835H01L2221/68368
    • Processes used to transfer semiconductor structures from an initial substrate to a base substrate include bonding the initial substrate with a silicon dioxide layer to a doped silicon structure weakened sufficiently by hydrogen implantation for cleaving. After cleaving, a doped silicon layer remains, burying the silicon dioxide layer between the doped silicon layer and the initial substrate. Semiconductor structures are formed within/on an epitaxial layer disposed on the doped silicon layer forming an intermediate semiconductor structure. A process handle is temporarily bonded to the semiconductor structures for support. The initial substrate is thinned and removed by a mechanical thinning process followed by chemical etching using the buried silicon dioxide layer as an etch stop. The silicon dioxide layer is chemically removed from the doped silicon layer. A base substrate is formed on the doped silicon layer. The process handle is removed leaving the semiconductor structures disposed on the base substrate.
    • 用于将半导体结构从初始衬底转移到基底衬底的工艺包括将初始衬底与二氧化硅层结合到通过氢注入充分削弱的用于裂解的掺杂硅结构。 在分裂之后,保留掺杂的硅层,将二氧化硅层埋在掺杂硅层和初始衬底之间。 半导体结构形成在设置在掺杂硅层上的外延层内/之上,形成中间半导体结构。 工艺手柄临时粘合到用于支撑的半导体结构。 通过机械稀化处理使初始底物变薄并除去,然后使用掩埋二氧化硅层作为蚀刻停止层进行化学蚀刻。 从掺杂硅层化学去除二氧化硅层。 基底衬底形成在掺杂硅层上。 去除处理手柄,留下设置在基底基板上的半导体结构。
    • 10. 发明申请
    • Methods, Compositions, and Kits for Quantitating Antibodies
    • 用于定量抗体的方法,组合物和试剂盒
    • US20070281367A1
    • 2007-12-06
    • US11743052
    • 2007-05-01
    • Kevin HennessyJeffrey Rice
    • Kevin HennessyJeffrey Rice
    • G01N33/566C07H21/00C12N9/00
    • C12Q1/6876C07K14/47C07K14/4711C12Q1/6816C12Q2533/107
    • The present teachings provide methods, compositions, and kits for quantitating antibodies. In some embodiments, the method comprises binding two proximity probes to two binding sites on the target antibody, wherein the proximity probes are comprised of a binding moiety and a thereto coupled oligonucleotide, wherein the binding moities of each proximity probe are the same, and wherein the binding sites for the binding moieties of the proximity probes are on one and the same target antibody. The binding moieties are allowed to bind to the target antibody and the oligonucleotides interact with each other if they are in close proximity to each other. Quantitating the degree of interaction between the oligonucleotides allows for quantitation of the target antibody.
    • 本教导提供了用于定量抗体的方法,组合物和试剂盒。 在一些实施方案中,所述方法包括将两个邻近探针结合到靶抗体上的两个结合位点,其中所述接近探针由结合部分和其耦合的寡核苷酸组成,其中每个邻近探针的结合度相同,并且其中 接近探针的结合部分的结合位点在同一个靶抗体上。 允许结合部分与靶抗体结合,并且如果寡核苷酸彼此接近,则寡核苷酸彼此相互作用。 量化寡核苷酸之间的相互作用程度允许定量靶抗体。