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1. 发明授权

US09172895B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US09172895B2
公开(公告)日：2015-10-27
申请号：US14542472
申请日：2014-11-14
申请人： PANASONIC CORPORATION
发明人： Makoto Yarino , Takahiro Yamamoto , Yoshiyuki Matsunaga
IPC分类号： H04N3/14 , H04N5/335 , H04N5/378 , H01L27/146 , H04N5/357 , H04N5/363 , H04N5/369 , H04N5/374
CPC分类号： H04N5/378 , H01L27/14609 , H01L27/14612 , H01L27/14643 , H04N5/335 , H04N5/3577 , H04N5/363 , H04N5/3698 , H04N5/3742
摘要： A solid-state imaging device including pixels, each pixel having a reset transistor, a selection transistor, an amplification transistor, and a photoelectric conversion unit. The photoelectric conversion unit has a photoelectric conversion film which performs photoelectric conversion, a pixel electrode formed on the surface of the photoelectric conversion film that faces the semiconductor substrate, and a transparent electrode formed on the surface of the photoelectric conversion film that is opposite to the pixel electrode, and the amplitude of a row reset signal applied to the gate of the reset transistor is smaller than at least one of (a) the maximum voltage applied to the drain of the amplification transistor, (b) the maximum voltage applied to the gate of the selection transistor, (c) the power source voltage applied to an inverting amplifier, and (d) the maximum voltage applied to a transparent electrode.
摘要翻译：包括像素的固态成像装置，每个像素具有复位晶体管，选择晶体管，放大晶体管和光电转换单元。光电转换单元具有执行光电转换的光电转换膜，形成在光电转换膜的面向半导体衬底的表面上的像素电极和形成在光电转换膜的与该半导体衬底相反的表面上的透明电极并且施加到复位晶体管的栅极的行复位信号的振幅小于（a）施加到放大晶体管的漏极的最大电压中的至少一个，（b）施加到复位晶体管的栅极的最大电压选择晶体管的栅极，（c）施加到反相放大器的电源电压，以及（d）施加到透明电极的最大电压。

2. 发明授权

US09124827B2 Image-capturing apparatus having a control unit to vary a variable sensitivity voltage based on an output level of image-captured data 有权
标题翻译：具有控制单元的图像捕获设备，用于基于图像捕获数据的输出电平来改变可变灵敏度电压
公开(公告)号：US09124827B2
公开(公告)日：2015-09-01
申请号：US13920156
申请日：2013-06-18
申请人： Panasonic Corporation
发明人： Katsunori Mizuno , Yoshiyuki Matsunaga , Takahiro Yamamoto
IPC分类号： H01L27/00 , H04N5/353 , H01L27/146 , H04N5/355 , H04N5/3745
CPC分类号： H04N5/3535 , H01L27/1461 , H04N5/3532 , H04N5/35563 , H04N5/3559 , H04N5/3745
摘要： An image-capturing apparatus including a solid-state imaging device including unit-cells arranged in a matrix, in which each of the unit-cells includes a photoelectric conversion unit including: a photoelectric conversion film formed above a semiconductor substrate; a pixel electrode formed on a surface of the photoelectric conversion film, the surface facing the semiconductor substrate; and a transparent electrode formed on a surface of the photoelectric conversion film, the surface being opposite the surface on which the pixel electrode is formed, and the image-capturing apparatus further includes: a voltage applying unit which applies, between the pixel electrode and the transparent electrode, a variable sensitivity voltage for controlling sensitivity of the solid-state imaging device; a level detecting unit which detects an output level of image-captured image data from the solid-state imaging device; and a controlling unit which varies the variable sensitivity voltage based on the output level detected by the level detecting unit.
摘要翻译：一种摄像装置，包括固体成像装置，其包括以矩阵形式布置的单位单元，其中每个单位单元包括光电转换单元，所述光电转换单元包括：形成在半导体衬底上的光电转换膜; 形成在所述光电转换膜的表面上的像素电极，与所述半导体衬底相对的表面; 以及形成在所述光电转换膜的表面上的与形成有所述像素电极的表面相对的表面的透明电极，所述图像捕获装置还包括：电压施加单元，其在像素电极和透明电极，用于控制固态成像装置的灵敏度的可变灵敏度电压; 电平检测单元，其从固态成像装置检测图像拍摄图像数据的输出电平; 以及控制单元，其基于由电平检测单元检测到的输出电平来改变可变灵敏度电压。

3. 发明授权

US09105544B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US09105544B2
公开(公告)日：2015-08-11
申请号：US13722135
申请日：2012-12-20
申请人： PANASONIC CORPORATION
发明人： Yoshiyuki Matsunaga
IPC分类号： H01L29/10 , H01L21/00 , G02F1/13 , H01L27/146 , G02F1/1362
CPC分类号： H01L27/14632 , G02F1/136227 , G02F1/136286 , H01L27/14636 , H01L27/14638 , H01L27/14643 , H01L27/14665
摘要： A solid-state imaging device including unit pixel cells, each having a photoelectric conversion film and a pixel electrode which are formed above a silicon substrate, an amplification transistor which is formed on the silicon substrate and outputs a voltage according to a potential of the pixel electrode, and a reset transistor which is formed on the silicon substrate and resets a potential of a gate electrode of the amplification transistor, the imaging device including a vertical signal line which is disposed correspondingly to a column of the unit pixel cells, and transmits a voltage of the unit pixel cells of the corresponding column, and a vertical scanning unit which selects a row of the unit pixel cells having a voltage to be outputted to the vertical signal line, wherein the vertical signal line is located below the pixel electrode of the unit pixel cells corresponding to the vertical signal line.
摘要翻译：一种固态成像装置，包括单位像素单元，每个像素单元具有形成在硅衬底上的光电转换膜和像素电极;形成在硅衬底上的放大晶体管，并输出根据像素的电位的电压电极和形成在硅衬底上并复位放大晶体管的栅电极的电位的复位晶体管，该成像器件包括相对于单位像素单元的列设置的垂直信号线，并发送相应列的单位像素单元的电压以及垂直扫描单元，其选择具有要输出到垂直信号线的电压的单位像素单元的行，其中垂直信号线位于对应于垂直信号线的单位像素单元。

4. 发明授权

US09270894B2 Imaging apparatus and method of driving the same 有权
标题翻译：成像装置及其驱动方法
公开(公告)号：US09270894B2
公开(公告)日：2016-02-23
申请号：US14495365
申请日：2014-09-24
申请人： PANASONIC CORPORATION
发明人： Takahiro Yamamoto , Yoshiyuki Matsunaga , Takayuki Ota
IPC分类号： H04N5/351 , G03B7/00 , H04N5/235 , H01L27/146 , H04N5/232 , H04N5/335 , H04N5/353 , H04N5/355 , H04N5/361 , H04N5/367
CPC分类号： H04N5/2353 , H01L27/14609 , H01L27/14643 , H04N5/23245 , H04N5/2358 , H04N5/335 , H04N5/353 , H04N5/35581 , H04N5/361 , H04N5/367
摘要： An imaging apparatus disclosed herein includes: a solid-state imaging device in which pixels are arranged in a matrix; a mechanical shutter; and a signal processing unit, wherein the signal processing unit: resets charge stored in all the pixels by closing the mechanical shutter and applying a voltage V2 to a photoelectric conversion unit; starts first exposure by opening the mechanical shutter and applying a voltage V1 to the photoelectric conversion unit; finishes the first exposure by applying the voltage V2 to the photoelectric conversion unit with the mechanical shutter open; reads pixel signals to obtain a first still image; resets all the pixels; starts second exposure by applying the voltage V1 to the photoelectric conversion unit with the mechanical shutter open; finishes the second exposure by applying the voltage V2 to the photoelectric conversion unit with the mechanical shutter open; reads pixel signals to obtain a second still image.
摘要翻译：本文公开的成像装置包括：固体成像装置，其中像素被布置成矩阵; 机械快门; 信号处理单元，其中信号处理单元通过关闭机械快门并将电压V2施加到光电转换单元来复位存储在所有像素中的电荷; 通过打开机械快门并向光电转换单元施加电压V1来开始第一曝光; 通过在机械快门打开时将电压V2施加到光电转换单元来完成第一次曝光; 读取像素信号以获得第一静止图像; 复位所有像素; 通过在机械快门打开的情况下将电压V1施加到光电转换单元来启动第二曝光; 通过在机械快门打开时将电压V2施加到光电转换单元来完成第二曝光; 读取像素信号以获得第二静止图像。

5. 发明授权

US08994864B2 Solid-state imaging device, and method for driving the same 有权
标题翻译：固态成像装置及其驱动方法
公开(公告)号：US08994864B2
公开(公告)日：2015-03-31
申请号：US13722860
申请日：2012-12-20
申请人： Panasonic Corporation
发明人： Takahiro Yamamoto , Makoto Yarino , Yoshiyuki Matsunaga
IPC分类号： H04N3/14 , H04N5/335 , H01L27/146 , H04N5/363 , H04N5/378
CPC分类号： H04N5/335 , H01L27/1461 , H01L27/14692 , H04N5/363 , H04N5/378
摘要： A solid-state imaging device according to the present invention includes: a semiconductor substrate; a plurality of pixels disposed on the semiconductor substrate in rows and columns; a column signal line formed for each of the columns; an inverting amplifier connected to the column signal line; and a feedback line, provided for each of the columns, to feed back output signal of the inverting amplifier to pixels in a corresponding column, wherein the amplifying transistor includes a gate connected to the pixel electrode and outputs signal voltage corresponding to the pixel electrode to a column signal line via the selection transistor, and one of a source and a drain of the reset transistor is connected to the pixel electrode and the other is connected to a corresponding feedback line.
摘要翻译：根据本发明的固体摄像器件包括：半导体衬底; 以行和列布置在半导体衬底上的多个像素; 为每个列形成的列信号线; 连接到列信号线的反相放大器; 以及为每个列提供的反馈线，将反相放大器的输出信号反馈到相应列中的像素，其中放大晶体管包括连接到像素电极的栅极，并将对应于像素电极的信号电压输出到经由选择晶体管的列信号线，复位晶体管的源极和漏极之一连接到像素电极，另一个连接到相应的反馈线。

6. 发明授权

US08922687B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US08922687B2
公开(公告)日：2014-12-30
申请号：US13722929
申请日：2012-12-20
申请人： Panasonic Corporation
发明人： Makoto Yarino , Takahiro Yamamoto , Yoshiyuki Matsunaga
IPC分类号： H04N3/14 , H04N5/335 , H04N5/363 , H04N5/369 , H04N5/357 , H01L27/146 , H04N5/374
CPC分类号： H04N5/378 , H01L27/14609 , H01L27/14612 , H01L27/14643 , H04N5/335 , H04N5/3577 , H04N5/363 , H04N5/3698 , H04N5/3742
摘要： A solid-state imaging device including pixels, each pixel having a reset transistor, a selection transistor, an amplification transistor, and a photoelectric conversion unit. The photoelectric conversion unit has a photoelectric conversion film which performs photoelectric conversion, a pixel electrode formed on the surface of the photoelectric conversion film that faces the semiconductor substrate, and a transparent electrode formed on the surface of the photoelectric conversion film that is opposite to the pixel electrode, and the amplitude of a row reset signal applied to the gate of the reset transistor is smaller than at least one of (a) the maximum voltage applied to the drain of the amplification transistor, (b) the maximum voltage applied to the gate of the selection transistor, (c) the power source voltage applied to an inverting amplifier, and (d) the maximum voltage applied to a transparent electrode.
摘要翻译：包括像素的固态成像装置，每个像素具有复位晶体管，选择晶体管，放大晶体管和光电转换单元。光电转换单元具有执行光电转换的光电转换膜，形成在光电转换膜的面向半导体衬底的表面上的像素电极和形成在光电转换膜的与该半导体衬底相反的表面上的透明电极并且施加到复位晶体管的栅极的行复位信号的振幅小于（a）施加到放大晶体管的漏极的最大电压中的至少一个，（b）施加到复位晶体管的栅极的最大电压选择晶体管的栅极，（c）施加到反相放大器的电源电压，以及（d）施加到透明电极的最大电压。

7. 发明授权

US08592880B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US08592880B2
公开(公告)日：2013-11-26
申请号：US13626612
申请日：2012-09-25
申请人： Panasonic Corporation
发明人： Makoto Inagaki , Yoshiyuki Matsunaga
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14636 , H04N5/341 , H04N5/3575 , H04N5/3741
摘要： In each photosensitive cell, a photodiode 101, a transfer gate 102, a floating diffusion layer section 103, an amplifier transistor 104, and a reset transistor 105 are formed in one active region surrounded by a device isolation region. The floating diffusion layer section 103 included in one photosensitive cell is connected not to the amplifier transistor 104 included in that cell but to the gate of the amplifier transistor 104 included in another photosensitive cell adjacent to the one photosensitive cell in the column direction. A polysilicon wire 111 connects the transfer gates 102 arranged in the same row, and a polysilicon wire 112 connects the reset transistors 105 arranged in the same row. For connection in the row direction, only polysilicon wires are used.
摘要翻译：在每个感光单元中，在由器件隔离区包围的一个有源区域中形成光电二极管101，传输门102，浮动扩散层部分103，放大器晶体管104和复位晶体管105。包含在一个感光单元中的浮动扩散层部分103不是连接到包括在该单元中的放大器晶体管104，而是连接到在列方向上与一个感光单元相邻的另一个感光单元中的放大器晶体管104的栅极。多晶硅导线111连接排列在同一行的传输门102，并且多晶硅布线112连接布置在同一行中的复位晶体管105。为了在行方向上连接，仅使用多晶硅线。

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