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1. 发明申请

US20060178003A1 Use of germanium dioxide and/or alloys of GeO2 with silicon dioxide for semiconductor dielectric applications 失效
标题翻译：将二氧化锗和/或GeO2与二氧化硅的合金用于半导体电介质应用
公开(公告)号：US20060178003A1
公开(公告)日：2006-08-10
申请号：US11055141
申请日：2005-02-10
申请人： Padmanabhan Krishnaraj , Michael Cox , Bruno Geoffrion , Srinivas Nemani
发明人： Padmanabhan Krishnaraj , Michael Cox , Bruno Geoffrion , Srinivas Nemani
IPC分类号： H01L21/4763 , H01L21/31
CPC分类号： H01L21/76837 , H01L21/02126 , H01L21/02274 , H01L21/0234 , H01L21/31604 , H01L21/31612 , H01L21/76224
摘要： A method is disclosed for depositing a dielectric film on a substrate having a plurality of gaps formed between adjacent raised surfaces disposed in a high density plasma substrate processing chamber substrate. In one embodiment the method comprises flowing a process gas comprising a germanium source, a silicon source and an oxidizing agent into the substrate processing chamber; forming a high density plasma that has simultaneous deposition and sputtering components from the process gas to deposit a dielectric film comprising silicon, germanium and oxygen; and during the step of forming a high density plasma, maintaining a pressure within the substrate processing chamber of less than 100 mTorr while allowing the dielectric film to be heated above its glass transition temperature.
摘要翻译：公开了一种用于在具有多个间隙的衬底上沉积电介质膜的方法，所述间隙形成在设置在高密度等离子体衬底处理室衬底中的相邻凸起表面之间。在一个实施方案中，该方法包括将包含锗源，硅源和氧化剂的工艺气体流入衬底处理室; 形成具有来自工艺气体的同时沉积和溅射组分的高密度等离子体，以沉积包含硅，锗和氧的电介质膜; 并且在形成高密度等离子体的步骤期间，将基板处理室内的压力保持在小于100mTorr，同时允许电介质膜被加热到其玻璃化转变温度以上。

2. 发明授权

US06890597B2 HDP-CVD uniformity control 失效
标题翻译： HDP-CVD均匀性控制
公开(公告)号：US06890597B2
公开(公告)日：2005-05-10
申请号：US10435296
申请日：2003-05-09
申请人： Padmanabhan Krishnaraj , Bruno Geoffrion , Michael S. Cox , Lin Zhang , Bikram Kapoor , Anchuan Wang , Zhenjiang Cui
发明人： Padmanabhan Krishnaraj , Bruno Geoffrion , Michael S. Cox , Lin Zhang , Bikram Kapoor , Anchuan Wang , Zhenjiang Cui
IPC分类号： C23C16/44 , C23C16/455 , C23C16/56 , C23C16/40
CPC分类号： C23C16/45502 , C23C16/45591 , C23C16/56
摘要： A combination of deposition and polishing steps are used to permit improved uniformity of a film after the combination of steps. Both the deposition and polishing are performed with processes that vary across the substrate. The combination of the varying deposition and etching rates results in a film that is substantially planar after the film has been polished. In some instances, it may be easier to control the variation of one of the two processes than the other so that the more controllable process is tailored to accommodate nonuniformities introduced by the less controllable process.
摘要翻译：沉积和抛光步骤的组合用于在步骤组合之后改进膜的均匀性。通过在衬底上变化的工艺来进行沉积和抛光。不同沉积和蚀刻速率的组合导致在膜被抛光之后基本上是平面的膜。在一些情况下，控制两个过程之一的变化比另一个更容易，因此可控制过程被调整以适应由较不可控过程引入的不均匀性。

3. 发明申请

US20080041821A1 Gas Distribution System for Improved Transient Phase Deposition 审中-公开
标题翻译：用于改进瞬态相沉积的气体分配系统
公开(公告)号：US20080041821A1
公开(公告)日：2008-02-21
申请号：US11877502
申请日：2007-10-23
申请人： Sudhir Gondhalekar , Robert Duncan , Siamak Salimian , Muhammad Rasheed , Harry Smith Whitesell , Bruno Geoffrion , Padmanabhan Krishnaraj , Rudolf Gujer , Diana Gujer
发明人： Sudhir Gondhalekar , Robert Duncan , Siamak Salimian , Muhammad Rasheed , Harry Smith Whitesell , Bruno Geoffrion , Padmanabhan Krishnaraj , Rudolf Gujer , Diana Gujer
IPC分类号： C23F1/00
CPC分类号： C23C16/4558
摘要： Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel. The plurality of orifices are spaced from the gas inlet by a plurality of distances, and have sizes which vary with the distances from the gas inlet as measured along the first channel, such that the size of the orifice increases with an increase in the distance between the orifice and the gas inlet as measured along the first channel.
摘要翻译：本发明的实施例涉及一种将气体更均匀地分配到处理室中的气体分配系统。在一个实施例中，气体分配系统包括包括外表面和内表面的气环，以及设置在气环的外表面处的气体入口。气体入口与设置在气体环的外表面和内表面之间的第一通道流体耦合。多个气体出口分布在气环的内表面上，并且与设置在气体环的外表面和内表面之间的第二通道流体连接。多个孔流体耦合在第一通道和第二通道之间。多个孔与气体入口间隔多个距离，并且具有随着沿着第一通道测量的与气体入口的距离而变化的尺寸，使得孔的尺寸随着气体入口之间的距离的增加而增加沿着第一通道测量的孔口和气体入口。

4. 发明授权

US07189639B2 Use of germanium dioxide and/or alloys of GeO2 with silicon dioxide for semiconductor dielectric applications 失效
标题翻译：将二氧化锗和/或GeO2与二氧化硅的合金用于半导体电介质应用
公开(公告)号：US07189639B2
公开(公告)日：2007-03-13
申请号：US11055141
申请日：2005-02-10
申请人： Padmanabhan Krishnaraj , Michael S. Cox , Bruno Geoffrion , Srinivas D. Nemani
发明人： Padmanabhan Krishnaraj , Michael S. Cox , Bruno Geoffrion , Srinivas D. Nemani
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/76837 , H01L21/02126 , H01L21/02274 , H01L21/0234 , H01L21/31604 , H01L21/31612 , H01L21/76224
摘要： A method is disclosed for depositing a dielectric film on a substrate having a plurality of gaps formed between adjacent raised surfaces disposed in a high density plasma substrate processing chamber substrate. In one embodiment the method comprises flowing a process gas comprising a germanium source, a silicon source and an oxidizing agent into the substrate processing chamber; forming a high density plasma that has simultaneous deposition and sputtering components from the process gas to deposit a dielectric film comprising silicon, germanium and oxygen; and during the step of forming a high density plasma, maintaining a pressure within the substrate processing chamber of less than 100 mTorr while allowing the dielectric film to be heated above its glass transition temperature.
摘要翻译：公开了一种用于在具有多个间隙的衬底上沉积电介质膜的方法，所述间隙形成在设置在高密度等离子体衬底处理室衬底中的相邻凸起表面之间。在一个实施方案中，该方法包括将包含锗源，硅源和氧化剂的工艺气体流入衬底处理室; 形成具有来自工艺气体的同时沉积和溅射组分的高密度等离子体，以沉积包含硅，锗和氧的电介质膜; 并且在形成高密度等离子体的步骤期间，将基板处理室内的压力保持在小于100mTorr，同时允许电介质膜被加热到其玻璃化转变温度以上。

5. 发明授权

US06812153B2 Method for high aspect ratio HDP CVD gapfill 有权
标题翻译：高宽比HDP CVD填隙方法
公开(公告)号：US06812153B2
公开(公告)日：2004-11-02
申请号：US10137132
申请日：2002-04-30
申请人： Zhong Qiang Hua , Dong Qing Li , Zhengquan Tan , Zhuang Li , Michael Chiu Kwan , Bruno Geoffrion , Padmanabhan Krishnaraj
发明人： Zhong Qiang Hua , Dong Qing Li , Zhengquan Tan , Zhuang Li , Michael Chiu Kwan , Bruno Geoffrion , Padmanabhan Krishnaraj
IPC分类号： H01L21302
CPC分类号： H01L21/02164 , C23C16/045 , C23C16/401 , C23C16/402 , C23C16/507 , H01L21/02211 , H01L21/02274 , H01L21/31612 , H01L21/76229
摘要： A method of depositing a high density plasma silicon oxide layer having improved gapfill capabilities. In one embodiment the method includes flowing a process gas consisting of a silicon-containing source, an oxygen-containing source and helium into a substrate processing chamber and forming a plasma from the process gas. The ratio of the flow rate of the helium with respect to the combined flow rate of the silicon source and oxygen source is between 0.5:1 and 3.0:1 inclusive. In one particular embodiment, the process gas consists of monosilane (SiH4), molecular oxygen (O2) and helium.
摘要翻译：一种沉积具有改进的间隙填充能力的高密度等离子体氧化硅层的方法。在一个实施例中，该方法包括将由含硅源，含氧源和氦组成的工艺气体流入衬底处理室并从工艺气体形成等离子体。氦流量相对于硅源和氧源的组合流量的比率在0.5:1和3.0:1之间。在一个具体实施方案中，工艺气体由单硅烷（SiH 4），分子氧（O 2）和氦组成。

6. 发明申请

US20060113038A1 Gas distribution system for improved transient phase deposition 有权
标题翻译：用于改善瞬态相沉积的气体分配系统
公开(公告)号：US20060113038A1
公开(公告)日：2006-06-01
申请号：US11123453
申请日：2005-05-04
申请人： Sudhir Gondhalekar , Robert Duncan , Siamak Salimian , Muhammad Rasheed , Harry Whitesell , Bruno Geoffrion , Padmanabhan Krishnaraj , Rudolf Gujer
发明人： Sudhir Gondhalekar , Robert Duncan , Siamak Salimian , Muhammad Rasheed , Harry Whitesell , Bruno Geoffrion , Padmanabhan Krishnaraj , Rudolf Gujer
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： C23C16/4558
摘要： Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel. The plurality of orifices are spaced from the gas inlet by a plurality of distances, and have sizes which vary with the distances from the gas inlet as measured along the first channel, such that the size of the orifice increases with an increase in the distance between the orifice and the gas inlet as measured along the first channel.
摘要翻译：本发明的实施例涉及一种将气体更均匀地分配到处理室中的气体分配系统。在一个实施例中，气体分配系统包括包括外表面和内表面的气环，以及设置在气环的外表面处的气体入口。气体入口与设置在气体环的外表面和内表面之间的第一通道流体耦合。多个气体出口分布在气环的内表面上，并且与设置在气体环的外表面和内表面之间的第二通道流体连接。多个孔流体耦合在第一通道和第二通道之间。多个孔与气体入口间隔多个距离，并且具有随着沿着第一通道测量的与气体入口的距离而变化的尺寸，使得孔的尺寸随着气体入口之间的距离的增加而增加沿着第一通道测量的孔口和气体入口。

7. 发明授权

US07064077B2 Method for high aspect ratio HDP CVD gapfill 失效
标题翻译：高宽比HDP CVD填隙方法
公开(公告)号：US07064077B2
公开(公告)日：2006-06-20
申请号：US10956469
申请日：2004-10-01
申请人： Zhong Qiang Hua , Dong Qing Li , Zhengquan Tan , Zhuang Li , Michael Chiu Kwan , Bruno Geoffrion , Padmanabhan Krishnaraj
发明人： Zhong Qiang Hua , Dong Qing Li , Zhengquan Tan , Zhuang Li , Michael Chiu Kwan , Bruno Geoffrion , Padmanabhan Krishnaraj
IPC分类号： H01L21/302
CPC分类号： H01L21/02164 , C23C16/045 , C23C16/401 , C23C16/402 , C23C16/507 , H01L21/02211 , H01L21/02274 , H01L21/31612 , H01L21/76229
摘要： A method of depositing a high density plasma silicon oxide layer having improved gapfill capabilities. In one embodiment the method includes flowing a process gas consisting of a silicon-containing source, an oxygen-containing source and helium into a substrate processing chamber and forming a plasma from the process gas. The ratio of the flow rate of the helium with respect to the combined flow rate of the silicon source and oxygen source is between 0.5:1 and 3.0:1 inclusive. In one particular embodiment, the process gas consists of monosilane (SiH4), molecular oxygen (O2) and helium.
摘要翻译：一种沉积具有改进的间隙填充能力的高密度等离子体氧化硅层的方法。在一个实施例中，该方法包括将由含硅源，含氧源和氦组成的工艺气体流入衬底处理室并从工艺气体形成等离子体。氦流量相对于硅源和氧源的组合流量的比率在0.5:1和3.0:1之间。在一个具体实施方案中，工艺气体由单硅烷（SiH 4 S 4），分子氧（O 2 O 2）和氦组成。

8. 发明申请

US20050079715A1 Method for high aspect ratio HDP CVD gapfill 失效
标题翻译：高宽比HDP CVD填隙方法
公开(公告)号：US20050079715A1
公开(公告)日：2005-04-14
申请号：US10956469
申请日：2004-10-01
申请人： Zhong Hua , Dong Li , Zhengquan Tan , Zhuang Li , Michael Kwan , Bruno Geoffrion , Padmanabhan Krishnaraj
发明人： Zhong Hua , Dong Li , Zhengquan Tan , Zhuang Li , Michael Kwan , Bruno Geoffrion , Padmanabhan Krishnaraj
IPC分类号： C23C16/04 , C23C16/40 , C23C16/507 , H01L21/316 , H01L21/762 , H01L21/302 , H01L21/31 , H01L21/461 , H01L21/469
CPC分类号： H01L21/02164 , C23C16/045 , C23C16/401 , C23C16/402 , C23C16/507 , H01L21/02211 , H01L21/02274 , H01L21/31612 , H01L21/76229
摘要： A method of depositing a high density plasma silicon oxide layer having improved gapfill capabilities. In one embodiment the method includes flowing a process gas consisting of a silicon-containing source, an oxygen-containing source and helium into a substrate processing chamber and forming a plasma from the process gas. The ratio of the flow rate of the helium with respect to the combined flow rate of the silicon source and oxygen source is between 0.5:1 and 3.0:1 inclusive. In one particular embodiment, the process gas consists of monosilane (SiH4), molecular oxygen (O2) and helium.
摘要翻译：一种沉积具有改进的间隙填充能力的高密度等离子体氧化硅层的方法。在一个实施例中，该方法包括将由含硅源，含氧源和氦组成的工艺气体流入衬底处理室并从工艺气体形成等离子体。氦流量相对于硅源和氧源的组合流量的比率在0.5:1和3.0:1之间。在一个具体实施方案中，工艺气体由单硅烷（SiH 4），分子氧（O 2）和氦组成。

9. 发明授权

US07722737B2 Gas distribution system for improved transient phase deposition 有权
标题翻译：用于改善瞬态相沉积的气体分配系统
公开(公告)号：US07722737B2
公开(公告)日：2010-05-25
申请号：US11123453
申请日：2005-05-04
申请人： Sudhir Gondhalekar , Robert Duncan , Siamak Salimian , Muhammad M. Rasheed , Harry Smith Whitesell , Bruno Geoffrion , Padmanabhan Krishnaraj , Rudolf Gujer , Diana E. Gujer, legal representative
发明人： Sudhir Gondhalekar , Robert Duncan , Siamak Salimian , Muhammad M. Rasheed , Harry Smith Whitesell , Bruno Geoffrion , Padmanabhan Krishnaraj , Rudolf Gujer
IPC分类号： H01L21/326 , C23C16/505
CPC分类号： C23C16/4558
摘要： Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel. The plurality of orifices are spaced from the gas inlet by a plurality of distances, and have sizes which vary with the distances from the gas inlet as measured along the first channel, such that the size of the orifice increases with an increase in the distance between the orifice and the gas inlet as measured along the first channel.
摘要翻译：本发明的实施例涉及一种将气体更均匀地分配到处理室中的气体分配系统。在一个实施例中，气体分配系统包括包括外表面和内表面的气环，以及设置在气环的外表面处的气体入口。气体入口与设置在气体环的外表面和内表面之间的第一通道流体耦合。多个气体出口分布在气环的内表面上，并且与设置在气体环的外表面和内表面之间的第二通道流体连接。多个孔流体耦合在第一通道和第二通道之间。多个孔与气体入口间隔多个距离，并且具有随着沿着第一通道测量的与气体入口的距离而变化的尺寸，使得孔的尺寸随着气体入口之间的距离的增加而增加沿着第一通道测量的孔口和气体入口。

10. 发明授权

US07775236B2 Method and apparatus for controlling gas flow to a processing chamber 有权
标题翻译：用于控制到处理室的气流的方法和装置
公开(公告)号：US07775236B2
公开(公告)日：2010-08-17
申请号：US11678622
申请日：2007-02-26
申请人： Ezra Robert Gold , Richard Charles Fovell , James Patrick Cruse , Jared Ahmad Lee , Bruno Geoffrion , Douglas Arthur Buchberger , Martin J. Salinas
发明人： Ezra Robert Gold , Richard Charles Fovell , James Patrick Cruse , Jared Ahmad Lee , Bruno Geoffrion , Douglas Arthur Buchberger , Martin J. Salinas
IPC分类号： F16K11/24
CPC分类号： H01J37/3244 , H01J37/32449 , H01L21/67098 , H01L21/67103 , H01L21/67109 , H01L21/67115 , Y10T137/7761 , Y10T137/87249
摘要： A method and apparatus for delivering gases to a semiconductor processing system are provided. In one embodiment, an apparatus for delivering gases to a semiconductor processing system includes a plurality of gas input and output lines having inlet and outlet ports. Connecting lines couple respective pairs of the gas input and gas output lines. Connecting valves are arranged to control flow through the respective connecting lines. Mass gas flow controllers are arranged to control flow into respective inlet ports. In another embodiment, a method includes providing a manifold having at least a plurality of inlet that may be selectively coupled to at least one of a plurality of outlets, flowing one or more gases through the manifold to a vacuum environment by-passing the processing chamber prior to processing or to a calibration circuit, and flowing the one or more gases into the processing chamber during substrate processing.
摘要翻译：提供了一种用于将气体输送到半导体处理系统的方法和装置。在一个实施例中，用于将气体输送到半导体处理系统的装置包括具有入口和出口的多个气体输入和输出线。连接线耦合各对气体输入和气体输出线。连接阀布置成控制通过相应连接线的流动。质量气体流量控制器布置成控制流入相应入口的流量。在另一个实施例中，一种方法包括提供具有至少多个入口的歧管，歧管可以选择性地联接到多个出口中的至少一个，将一个或多个气体通过歧管流动到真空环境，旁路处理室在处理之前或校准电路，并且在衬底处理期间使一种或多种气体流入处理室。

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