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US09467142B2 Semiconductor device with buffer and replica circuits 有权
标题翻译：具有缓冲器和复制电路的半导体器件
公开(公告)号：US09467142B2
公开(公告)日：2016-10-11
申请号：US14662962
申请日：2015-03-19
申请人： PS4 LUXCO S.A.R.L.
发明人： Toru Hatakeyama , Toru Ishikawa
IPC分类号： H03K19/0175 , H03K19/00 , G11C5/06 , G11C7/10
CPC分类号： H03K19/0027 , G11C5/06 , G11C7/1087
摘要： A semiconductor device, includes an input buffer, first and second PMOS transistors serially interconnected between a first power supply node and an output node of the input buffer. First and second NMOS transistors are serially interconnected between a second power supply node and the output node of the input buffer. A replica circuit includes a third and fourth PMOS transistors serially interconnected between the first power supply node and an output node of the replica circuit. Third and fourth NMOS transistors are serially interconnected between the second power supply node and the output node of the replica circuit. The input node of the replica circuit is connected to the output node of the replica circuit and a comparison circuit compares a voltage at the output node of the replica circuit to a reference voltage.
摘要翻译：半导体器件包括输入缓冲器，在第一电源节点和输入缓冲器的输出节点之间串联互连的第一和第二PMOS晶体管。第一和第二NMOS晶体管在第二电源节点和输入缓冲器的输出节点之间串联连接。复制电路包括在第一电源节点和复制电路的输出节点之间串联互连的第三和第四PMOS晶体管。第三和第四NMOS晶体管在第二电源节点和复制电路的输出节点之间串联连接。复制电路的输入节点连接到复制电路的输出节点，比较电路将复制电路输出节点的电压与参考电压进行比较。

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