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1. 发明授权

US09525133B2 Resistive random access memory with high uniformity and low power consumption and method for fabricating the same 有权
标题翻译：具有高均匀性和低功耗的电阻式随机存取存储器及其制造方法
公开(公告)号：US09525133B2
公开(公告)日：2016-12-20
申请号：US14916950
申请日：2014-03-31
申请人： PEKING UNIVERSITY
发明人： Ru Huang , Muxi Yu , Yimao Cai , Zhenxing Zhang , Qiang Li , Ming Li
IPC分类号： H01L29/00 , H01L47/00 , H01L21/336 , H01L45/00
CPC分类号： H01L45/146 , H01L45/08 , H01L45/1233 , H01L45/1616 , H01L45/1625 , H01L45/1675
摘要： Disclosed is a resistive random access memory, comprising a substrate, an insulating layer, a bottom electrode, a resistive material film, and a top electrode in an order from bottom to top, wherein the resistive material film is a four-layer structure composed of a same metal oxide; and the four layers in the four-layer structure from bottom to top have resistance values which are increased one after another by more than 10 times, oxygen concentrations which are increased one after another and thickness which are decreased one after another. The present invention may achieve complete formation-rupture of oxygen vacancy conductive filaments (CF) in each layer by dividing the resistive material film of the same metal oxide into four layers according to the different oxygen concentrations, so as to control accurately the resistance values, so that 2-bit storage with high uniformity is achieved.
摘要翻译：公开了一种电阻随机存取存储器，其从底部到顶部的顺序包括基板，绝缘层，底部电极，电阻材料膜和顶部电极，其中电阻材料膜是四层结构，相同的金属氧化物; 并且四层结构中的四层从底部到顶部具有一个接一个地增加大于十次的电阻值，一个接一个地增加的氧浓度和一个接一个地减小的氧浓度。本发明可以通过根据不同的氧浓度将相同金属氧化物的电阻材料膜分成四层来实现每层中的氧空位导电细丝（CF）的完全形成破裂，从而精确地控制电阻值，从而实现了高均匀性的2位存储。

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