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1. 发明申请

US20040053513A1 Method for production of semiconductor components 失效
标题翻译：制造半导体元件的方法
公开(公告)号：US20040053513A1
公开(公告)日：2004-03-18
申请号：US10625118
申请日：2003-07-22
申请人： Osram Opto Semiconductors GMBH & Co. OHG, a Regensburg Bavaria, corporation
发明人： Volker Harle
IPC分类号： H01L021/31
CPC分类号： H01L21/30604
摘要： The present invention relates to a method for the production of semiconductor components. This method comprises the steps applying masking layers and components on epitaxial semiconductor substrates within the epitaxy reactor without removal of the substrate from the reactor. The masking layers may be HF soluble such that a gas etchant may be introduced within the reactor so as to etch a select number and portion of masking layers. This method may be used for production of lateral integrated components on a substrate wherein the components may be of the same or different type. Such types include electronic and optoelectronic components. Numerous masking layers may be applied, each defining particular windows intended to receive each of the various components. In the reactor, the masks may be selectively removed, then the components grown in the newly exposed windows.
摘要翻译：本发明涉及半导体元件的制造方法。该方法包括在外延反应器内的外延半导体衬底上施加掩模层和组件而不从反应器中去除衬底的步骤。掩蔽层可以是HF可溶的，使得可以在反应器内引入气体蚀刻剂，以便蚀刻选择数量和部分掩蔽层。该方法可以用于在衬底上生产横向集成组件，其中组件可以具有相同或不同的类型。这些类型包括电子和光电子元件。可以应用许多掩蔽层，每个屏蔽层限定旨在接收各种部件中的每一个的特定窗口。在反应器中，可以选择性地去除掩模，然后在新露出的窗口中生长组分。

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