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1. 发明申请

US20130230761A1 BATTERY MODULE AND BATTERY PACK 审中-公开
标题翻译：电池模块和电池组
公开(公告)号：US20130230761A1
公开(公告)日：2013-09-05
申请号：US13885650
申请日：2011-06-29
申请人： Oose Okutani , Yoshiaki Kobayashi , Shinichi Sakamoto
发明人： Oose Okutani , Yoshiaki Kobayashi , Shinichi Sakamoto
IPC分类号： H01M2/20
CPC分类号： H01M2/202 , H01M2/0245 , H01M2/1077 , H01M2/206
摘要： A battery module is provided in which a gap at a bonding section between a positive electrode bus bar and a negative electrode bus bar is less likely to be formed in a bonding process, and stress-induced strain is less likely to be caused at the bonding section after the positive electrode bus bar is bonded to the negative electrode bus bar. The battery module includes a plurality of cells 100 arranged with a same polarity oriented in a same direction, a positive electrode bus bar 200 by which positive electrode terminals of the cells 100 are electrically connected to each other in parallel, and a negative electrode bus bar 300 by which negative electrode terminals are electrically connected to each other in parallel. The positive electrode bus bar 200 includes a flat plate-like extended portion 210 which extends from an edge of the positive electrode bus bar 200 toward the negative electrode terminals, and the negative electrode bus bar 300 includes a bent portion 320 which is bent from an edge opposite to the extended portion 210 toward the negative electrode terminal. In the extended portion 220, a slit 230 is formed at an edge in a width direction perpendicular to an extension direction of the extended portion 220.
摘要翻译：提供了一种电池模块，其中在接合过程中不太可能形成在正极母线和负极母线之间的接合部分处的间隙，并且在接合时不太可能引起应力引起的应变正极母线与负极母线接合后的截面。电池模块包括以相同方向排列的相同极性的多个电池单元100，将电池单元100的正极端子彼此平行地电连接的正极母线200和负极母线 300，负极端子彼此并联电连接。正极母线200包括从正极母线200的边缘朝向负极端子延伸的平板状延伸部210，负极汇流条300包括弯曲部320，该弯曲部320从与延伸部分210相对的边缘朝向负极端子。在延伸部分220中，在与延伸部分220的延伸方向垂直的宽度方向的边缘处形成狭缝230。

2. 发明授权

US08148041B2 Carrier and two-component developer composed of the carrier 有权
标题翻译：载体和双组分显影剂由载体组成
公开(公告)号：US08148041B2
公开(公告)日：2012-04-03
申请号：US13012127
申请日：2011-01-24
申请人： Makoto Kobayashi , Yoshiaki Kobayashi , Yoshiyasu Matsumoto
发明人： Makoto Kobayashi , Yoshiaki Kobayashi , Yoshiyasu Matsumoto
IPC分类号： G03G9/107
CPC分类号： G03G9/107 , G03G9/1075 , G03G9/113 , G03G9/1131 , G03G9/1133
摘要： An objective is to provide a carrier exhibiting stable charge providing ability in which sufficient charge can be provided to toner having a small particle diameter, and no image contamination such as fog caused by toner scattering via lack of electrification is generated. Another objective is to provide a carrier capable of maintaining a charging level of no interference for image formation even under the image forming condition at which a charging level for printing a number of prints continuously is difficult to be maintained. Disclosed is a carrier comprising a core particle made of ferrite possessing Mg and coated thereon, a resin, wherein the core particle has a ratio of the number of irregular-shaped core particles of at most 5%, based on the total number of core particles, and a surface of the core particle has grains having a maximum grain diameter of 2-5 μm.
摘要翻译：目的是提供一种具有稳定的电荷提供能力的载体，其中可以向具有小粒径的调色剂提供足够的电荷，并且不会产生由于通过不起电而由调色剂飞散引起的图像污染。另一个目标是提供一种即使在连续打印多个打印件的打印水平难以维持的图像形成条件下，也能够保持对图像形成无干扰的充电水平的载体。公开了一种载体，其包含由具有Mg并且涂覆在其上的铁氧体制成的核心颗粒，树脂，其中核心颗粒具有至多5％的不规则核心颗粒的数量的比率，基于芯颗粒的总数，核粒子的表面具有最大粒径为2-5μm的粒子。

3. 发明申请

US20110036621A1 METAL MATERIAL, METHOD FOR PRODUCING THE SAME, AND ELECTRICAL/ELECTRONIC COMPONENT USING THE SAME 审中-公开
标题翻译：金属材料及其制造方法以及使用该金属材料的电气/电子元件
公开(公告)号：US20110036621A1
公开(公告)日：2011-02-17
申请号：US12667129
申请日：2008-06-30
申请人： Yoshiaki Kobayashi , Kazuo Yoshida
发明人： Yoshiaki Kobayashi , Kazuo Yoshida
IPC分类号： H05K1/00 , B05D5/12 , B32B15/08
CPC分类号： C23C28/00 , C23C2/28 , C23C10/30 , C23C26/00 , C25D5/48 , C25D5/50 , C25D7/00 , H01R13/03 , Y10T428/12569
摘要： A metal material (10), having an electrical conductive substrate 1; a surface layer 2 having tin or tin alloy formed on the electrical conductive substrate 1; and an organic coating 3 formed on the surface layer 2, organic coating 3 being formed with an organic compound including an ether linking group.
摘要翻译：具有导电性基板1的金属材料（10）形成在导电基板1上的具有锡或锡合金的表面层2; 和形成在表层2上的有机涂层3，有机涂层3由含有醚连接基团的有机化合物形成。

4. 发明申请

US20110003167A1 METALLIC MATERIAL FOR A CONNECTOR AND METHOD OF PRODUCING THE SAME 审中-公开
标题翻译：用于连接器的金属材料及其制造方法
公开(公告)号：US20110003167A1
公开(公告)日：2011-01-06
申请号：US12884268
申请日：2010-09-17
申请人： Shuichi KITAGAWA , Kengo Mitose , Yoshiaki Kobayashi
发明人： Shuichi KITAGAWA , Kengo Mitose , Yoshiaki Kobayashi
IPC分类号： B32B3/00 , B32B15/01 , B05D3/00 , B05D3/06
CPC分类号： C25D5/10 , C22C1/02 , C22C9/02 , C25D5/12 , C25D5/48 , H01R13/03 , Y10T428/12389 , Y10T428/12715
摘要： A metallic material for a connector, having a base material of a bar material or a rectangular wire material formed of copper or a copper alloy, in which a striped copper-tin alloy layer is formed in the longitudinal direction of the metallic material on a part of the surface of the metallic material, and in which a tin layer or a tin alloy layer is formed on the remaining part of the surface of the metallic material; and, a method of producing a metallic material for a connector, containing: providing a bar material or a rectangular wire material of copper or a copper alloy as a base material; forming a tin plating layer or a tin alloy plating layer on the base material, to obtain an intermediate material; and subjecting the intermediate material to reflow treatment in a stripe form in the longitudinal direction of the intermediate material.
摘要翻译：一种用于连接器的金属材料，其具有由铜或铜合金形成的棒状材料或矩形线材的基材，其中在金属材料的纵向方向上形成条状铜 - 锡合金层的金属材料的表面的其余部分上形成锡层或锡合金层，以及制造用于连接器的金属材料的方法，包括：提供铜或铜合金的棒材或矩形线材作为基材; 在基材上形成镀锡层或锡合金镀层，得到中间材料; 以及使所述中间材料在所述中间材料的长度方向上以带状的方式进行回流处理。

5. 发明申请

US20100163276A1 SILVER-COATED MATERIAL FOR MOVABLE CONTACT COMPONENT AND METHOD FOR MANUFACTURING SUCH SILVER-COATED MATERIAL 审中-公开
标题翻译：用于可移动接触部件的镀银材料及其制造这种镀银材料的方法
公开(公告)号：US20100163276A1
公开(公告)日：2010-07-01
申请号：US12593028
申请日：2008-03-25
申请人： Suguru Yamaguchi , Yoshiaki Kobayashi
发明人： Suguru Yamaguchi , Yoshiaki Kobayashi
IPC分类号： H01B1/02 , B05D5/12
CPC分类号： C25D5/12 , C25D3/12 , C25D3/46 , C25D5/36 , C25D7/00 , H01H1/021 , H01H11/045 , H01R13/03
摘要： A silver-coated material for a movable contact component is provided, in which a conductive base member (1) composed of iron or an iron alloy is coated with an underlayer (2) composed of nickel or a nickel alloy of 0.005 to 0.5 μm thick, the underlayer (2) is coated with an intermediate layer (3) composed of palladium, a palladium alloy or a silver tin alloy of 0.01 to 0.5 μm thick and the intermediate layer (3) is coated with an outermost surface layer (4) composed of silver or a silver alloy.
摘要翻译：提供一种用于可动接触部件的银涂层材料，其中由铁或铁合金构成的导电基底构件（1）涂覆有由镍或镍 - 镍合金构成的底层（2），其厚度为0.005-0.5μm ，底层（2）涂覆有由0.01至0.5μm厚的钯，钯合金或银锡合金构成的中间层（3），中间层（3）涂覆有最外表面层（4）由银或银合金组成。

6. 发明申请

US20100086392A1 SEMICONDUCTOR CONTAINER OPENING/CLOSING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：半导体容器开关/闭合装置和半导体器件制造方法
公开(公告)号：US20100086392A1
公开(公告)日：2010-04-08
申请号：US12569328
申请日：2009-09-29
申请人： Yoshiaki Kobayashi , Shigeru Kobayashi , Kenji Tokunaga , Koji Kato , Teruo Minami
发明人： Yoshiaki Kobayashi , Shigeru Kobayashi , Kenji Tokunaga , Koji Kato , Teruo Minami
IPC分类号： H01L21/677
CPC分类号： H01L21/67775 , H01L21/6735 , H01L21/67772
摘要： A method is provided of manufacturing semiconductor devices formed on a semiconductor wafer, including placing the wafer in a semiconductor container and conveying the container to a semiconductor manufacturing apparatus. An opening of the container is opposed to an opening of the apparatus such that an opener of the apparatus holds a lid of the opening the container. A key of the opener is inserted to a latch groove of the lid, and the key is rotated to contact a latch of the lid. The openings are connected such that a velocity differential pressure ratio obtained by dividing the maximum velocity when the opener holding the lid horizontally moves away from the opening of the container, by the differential pressure between the inside pressure and the outside pressure of the apparatus, is set to be 0.06 ((m/s)/Pa) or less, and then the wafer is processed.
摘要翻译：提供一种制造形成在半导体晶片上的半导体器件的方法，包括将晶片放置在半导体容器中并将容器输送到半导体制造装置。容器的开口与装置的开口相对，使得装置的开启器保持容器的开口盖。开启器的钥匙被插入到盖的闩锁槽中，并且钥匙被旋转以接触盖的闩锁。这些开口被连接成使得通过将保持盖的开启器水平地移动离开容器的开口的最大速度获得的速度差压比通过内部压力和设备的外部压力之间的压差来实现，设定为0.06（（m / s）/ Pa）以下，然后处理晶片。

7. 发明授权

US07390758B2 Method of manufacturing a semiconductor integrated circuit device with elimination of static charge 有权
标题翻译：制造具有消除静电荷的半导体集成电路器件的方法
公开(公告)号：US07390758B2
公开(公告)日：2008-06-24
申请号：US11698107
申请日：2007-01-26
申请人： Yoshiaki Kobayashi
发明人： Yoshiaki Kobayashi
IPC分类号： H01L21/02 , H01L21/67
CPC分类号： H01L21/67772 , H01L21/67775 , Y10S438/909
摘要： A sealed type container accommodating a semiconductor substrate is positioned to a load port of a semiconductor manufacturing apparatus. The semiconductor substrate is taken out of the container. An ionizer is used for static-eliminating the semiconductor substrates before and after process treatment in a transport area between the load port and a treatment section. The static-eliminated semiconductor substrate is accommodated in the container positioned to the load port. Thus, it is possible to decrease foreign materials adhering to the semiconductor substrate and errors in handling the semiconductor substrate.
摘要翻译：容纳半导体基板的密封型容器位于半导体制造装置的负载端口。将半导体衬底从容器中取出。离子发生器用于在负载端口和处理部之间的输送区域中的处理处理之前和之后静电消除半导体基板。静电消除的半导体衬底容纳在位于负载端口的容器中。因此，可以减少粘附到半导体衬底的异物和处理半导体衬底的误差。

8. 发明授权

US07314345B2 Semiconductor container opening/closing apparatus and semiconductor device manufacturing method 有权
标题翻译：半导体容器开闭装置及半导体装置的制造方法
公开(公告)号：US07314345B2
公开(公告)日：2008-01-01
申请号：US11391640
申请日：2006-03-29
申请人： Yoshiaki Kobayashi , Shigeru Kobayashi , Kenji Tokunaga , Koji Kato , Teruo Minami
发明人： Yoshiaki Kobayashi , Shigeru Kobayashi , Kenji Tokunaga , Koji Kato , Teruo Minami
IPC分类号： H01L21/677
CPC分类号： H01L21/67775 , H01L21/6735 , H01L21/67772
摘要： When a conventional semiconductor container opening/closing apparatus opens a lid of a semiconductor container, foreign particles enter into the container from outside through a gap between the container and a wall surface of the container opening/closing apparatus and adhere to a wafer in the container. An apparatus is provided to reduce the number of foreign particles adhering to the wafer by preventing foreign particles from entering into the container at the time of opening the container by the opening/closing apparatus. To achieve this, a velocity-differential pressure ratio obtained by dividing the maximum velocity at the time of opening the lid of the container in a vertical direction to an opening of the container, by the differential pressure between the inside pressure and the outside pressure of said semiconductor manufacturing apparatus, is set to be 0.06 ((m/s) Pa) or less.
摘要翻译：当传统的半导体容器打开/关闭装置打开半导体容器的盖子时，异物通过容器和容器打开/关闭装置的壁表面之间的间隙从外部进入容器，并且粘附到容器中的晶片。提供了一种装置，用于通过打开/关闭装置打开容器时防止异物进入容器，从而减少附着在晶片上的异物的数量。为了实现这一点，通过将容器的盖子在垂直方向上打开时的最大速度除以容器的开口之间的内压和外部压力之间的压差来获得的速度差压比所述半导体制造装置设定为0.06（（m / s）Pa）以下。

9. 发明授权

US07013096B2 Image forming apparatus with toner amount selection feature 失效
标题翻译：具有调色剂量选择功能的图像形成装置
公开(公告)号：US07013096B2
公开(公告)日：2006-03-14
申请号：US10765169
申请日：2004-01-28
申请人： Ichiro Ozawa , Yoshiaki Kobayashi , Hideaki Suzuki
发明人： Ichiro Ozawa , Yoshiaki Kobayashi , Hideaki Suzuki
IPC分类号： G03G15/08
CPC分类号： G03G15/0849 , G03G15/0853
摘要： An image forming apparatus includes an image bearing member on which a latent image corresponding to image information is formed, a developing device for developing the latent image on said image bearing member with a developer including carrier and toner, a supplying device for supplying a developer to the developing device, a detector for detecting information corresponding to the magnetic permeability of the developer, and a selecting device for selecting modes on the basis of the information detected by the detecting device, wherein the selecting device can select a first control mode that controls the amount of the developer which is supplied to the developing device by the supplying device on the basis of the information detected by the detector, and a second control mode that controls the amount of the developer which is supplied to the developing device by the supplying device on the basis of the image information.
摘要翻译：图像形成装置包括：图像承载部件，其上形成有对应于图像信息的潜像;显影装置，用于利用包含载体和调色剂的显影剂在所述图像承载部件上显影潜像;供给装置，用于将显影剂供应到显影装置，用于检测与显影剂的磁导率相对应的信息的检测器，以及基于由检测装置检测到的信息来选择模式的选择装置，其中选择装置可以选择控制显影装置的第一控制模式基于由检测器检测到的信息由供给装置供应到显影装置的显影剂的量以及控制通过供给装置供给到显影装置的显影剂的量的第二控制模式图像信息的基础。

10. 发明申请

US20050111937A1 Method of manufacturing a semiconductor integrated circuit device which prevents foreign particles from being drawn into a semiconductor container containing semiconductor wafers 有权
标题翻译：制造半导体集成电路装置的方法，该装置防止外来颗粒被吸入含有半导体晶片的半导体容器中
公开(公告)号：US20050111937A1
公开(公告)日：2005-05-26
申请号：US10974819
申请日：2004-10-28
申请人： Yoshiaki Kobayashi , Shigeru Kobayashi , Kenji Tokunaga , Koji Kato , Teruo Minami
发明人： Yoshiaki Kobayashi , Shigeru Kobayashi , Kenji Tokunaga , Koji Kato , Teruo Minami
IPC分类号： B65G1/00 , H01L21/673 , H01L21/677
CPC分类号： H01L21/67775 , H01L21/6735 , H01L21/67772
摘要： When a conventional semiconductor container opening/closing apparatus opens a lid of a semiconductor container, foreign particles enter into the container from outside through a gap between the container and a wall surface of the container opening/closing apparatus and adhere to a wafer in the container. A method is provided to reduce the number of foreign particles adhering to the wafer by preventing foreign particles from entering into the container at the time of opening the container by the opening/closing apparatus. To achieve this, a velocity-differential pressure ratio obtained by dividing the maximum velocity at the time of opening the lid of the container in a vertical direction to an opening of the container, by the differential pressure between the inside pressure and the outside pressure of said semiconductor manufacturing apparatus, is set to be 0.06 ((m/s) Pa) or less.
摘要翻译：当传统的半导体容器打开/关闭装置打开半导体容器的盖子时，异物通过容器和容器打开/关闭装置的壁表面之间的间隙从外部进入容器，并且粘附到容器中的晶片。提供了一种方法，用于通过打开/关闭装置打开容器时防止异物进入容器，从而减少附着在晶片上的异物的数量。为了实现这一点，通过将容器的盖子在垂直方向上打开容器的最大速度与容器的开口之间的内压和外部压力之间的压差相除来获得的速度差压比所述半导体制造装置设定为0.06（（m / s）Pa）以下。

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