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1. 发明申请

US20120018744A1 HIGH SPEED, WIDE OPTICAL BANDWIDTH, AND HIGH EFFICIENCY RESONANT CAVITY ENHANCED PHOTO-DETECTOR 有权
标题翻译：高速，宽光束带宽和高效率共振孔增强型光电探测器
公开(公告)号：US20120018744A1
公开(公告)日：2012-01-26
申请号：US12842341
申请日：2010-07-23
申请人： Olufemi I. Dosunmu , Ansheng Liu
发明人： Olufemi I. Dosunmu , Ansheng Liu
IPC分类号： H01L31/12 , H01L31/0232
CPC分类号： H01L31/02165 , H01L31/103
摘要： A single optical receiver having a photo-detector with a wide optical bandwidth and high efficiency within the wide optical bandwidth, the photo-detector comprising: a first diode region of first doping type for receiving light; a second diode region of second doping type and of second thickness; an active region for converting the received light to an electronic signal, the active region having a third thickness and configured to reside between the first diode region and the second diode region; and a reflector coupled to the second diode region and having a silicon layer with a fourth thickness, the silicon layer residing between silicon oxide layers of fifth thicknesses, wherein the active region is configured to absorb the light of wavelengths of less than 900 nm, and wherein the reflector is configured to reflect the light of wavelengths from a range of 1260 nm to 1380 nm.
摘要翻译：一种单光接收器，具有宽光带宽宽光栅和光效率高的光检测器，光检测器包括：用于接收光的第一掺杂类型的第一二极管区; 第二掺杂型和第二厚度的第二二极管区; 用于将所接收的光转换成电子信号的有源区域，所述有源区域具有第三厚度并被配置为驻留在所述第一二极管区域和所述第二二极管区域之间; 以及耦合到所述第二二极管区并具有第四厚度的硅层的反射器，所述硅层位于第五厚度的氧化硅层之间，其中所述有源区被配置为吸收小于900nm的波长的光，以及其中所述反射器被配置为将波长的光从1260nm到1380nm的范围反射。

2. 发明授权

US08829566B2 Germanium/silicon avalanche photodetector with separate absorption and multiplication regions 有权
标题翻译：锗/硅雪崩光电探测器，具有单独的吸收和乘法区域
公开(公告)号：US08829566B2
公开(公告)日：2014-09-09
申请号：US11724805
申请日：2007-03-15
申请人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
发明人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
IPC分类号： H01L31/107 , H01L31/18 , H01L31/028 , H01L31/0312
CPC分类号： H01L31/1075 , H01L27/14629 , H01L31/028 , H01L31/0312 , H01L31/1812 , Y02E10/547
摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
摘要翻译：公开了一种基于半导体波导的光接收器。根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。倍增区域被定义为接近并与吸收区域分离。乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。

3. 发明授权

US08338857B2 Germanium/silicon avalanche photodetector with separate absorption and multiplication regions 有权
标题翻译：锗/硅雪崩光电探测器，具有单独的吸收和乘法区域
公开(公告)号：US08338857B2
公开(公告)日：2012-12-25
申请号：US12870811
申请日：2010-08-28
申请人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
发明人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
IPC分类号： H01L31/028 , H01L31/0352
CPC分类号： H01L31/1075 , H01L27/14629 , H01L31/028 , H01L31/0312 , H01L31/1812 , Y02E10/547
摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
摘要翻译：公开了一种基于半导体波导的光接收器。根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。倍增区域被定义为接近并与吸收区域分离。乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。

4. 发明申请

US20100320502A1 GERMANIUM/SILICON AVALANCHE PHOTODETECTOR WITH SEPARATE ABSORPTION AND MULTIPLICATION REGIONS 有权
标题翻译：具有单独吸收和多样化区域的锗/硅玻璃光电转换器
公开(公告)号：US20100320502A1
公开(公告)日：2010-12-23
申请号：US12870811
申请日：2010-08-28
申请人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
发明人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
IPC分类号： H01L31/107
CPC分类号： H01L31/1075 , H01L27/14629 , H01L31/028 , H01L31/0312 , H01L31/1812 , Y02E10/547
摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
摘要翻译：公开了一种基于半导体波导的光接收器。根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。倍增区域被定义为接近并与吸收区域分离。乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。

5. 发明授权

US07233051B2 Germanium/silicon avalanche photodetector with separate absorption and multiplication regions 有权
标题翻译：锗/硅雪崩光电探测器，具有单独的吸收和乘法区域
公开(公告)号：US07233051B2
公开(公告)日：2007-06-19
申请号：US11170556
申请日：2005-06-28
申请人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
发明人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
IPC分类号： H01L31/107
CPC分类号： H01L31/1075 , H01L27/14629 , H01L31/028 , H01L31/0312 , H01L31/1812 , Y02E10/547
摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
摘要翻译：公开了一种基于半导体波导的光接收器。根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。倍增区域被定义为接近并与吸收区域分离。乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。

6. 发明授权

US08330171B2 High speed, wide optical bandwidth, and high efficiency resonant cavity enhanced photo-detector 有权
标题翻译：高速，宽光宽带和高效率谐振腔增强型光电探测器
公开(公告)号：US08330171B2
公开(公告)日：2012-12-11
申请号：US12842341
申请日：2010-07-23
申请人： Olufemi I. Dosunmu , Ansheng Liu
发明人： Olufemi I. Dosunmu , Ansheng Liu
IPC分类号： H01L29/16
CPC分类号： H01L31/02165 , H01L31/103
摘要： A single optical receiver having a photo-detector with a wide optical bandwidth and high efficiency within the wide optical bandwidth, the photo-detector comprising: a first diode region of first doping type for receiving light; a second diode region of second doping type and of second thickness; an active region for converting the received light to an electronic signal, the active region having a third thickness and configured to reside between the first diode region and the second diode region; and a reflector coupled to the second diode region and having a silicon layer with a fourth thickness, the silicon layer residing between silicon oxide layers of fifth thicknesses, wherein the active region is configured to absorb the light of wavelengths of less than 900 nm, and wherein the reflector is configured to reflect the light of wavelengths from a range of 1260 nm to 1380 nm.
摘要翻译：一种单光接收器，具有宽光带宽宽光栅和光效率高的光检测器，光检测器包括：用于接收光的第一掺杂类型的第一二极管区; 第二掺杂型和第二厚度的第二二极管区; 用于将所接收的光转换成电子信号的有源区域，所述有源区域具有第三厚度并被配置为驻留在所述第一二极管区域和所述第二二极管区域之间; 以及耦合到所述第二二极管区并具有第四厚度的硅层的反射器，所述硅层位于第五厚度的氧化硅层之间，其中所述有源区被配置为吸收小于900nm的波长的光，以及其中所述反射器被配置为将波长的光从1260nm到1380nm的范围反射。

7. 发明申请

US20140367740A1 GERMANIUM/SILICON AVALANCHE PHOTODETECTOR WITH SEPARATE ABSORPTION AND MULTIPLICATION REGIONS 审中-公开
标题翻译：具有单独吸收和多样化区域的锗/硅玻璃光电转换器
公开(公告)号：US20140367740A1
公开(公告)日：2014-12-18
申请号：US14472241
申请日：2014-08-28
申请人： Micheal T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
发明人： Micheal T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
IPC分类号： H01L31/107 , H01L27/146
CPC分类号： H01L31/1075 , H01L27/14629 , H01L31/028 , H01L31/0312 , H01L31/1812 , Y02E10/547
摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
摘要翻译：公开了一种基于半导体波导的光接收器。根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。倍增区域被定义为接近并与吸收区域分离。乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。

8. 发明申请

US20170336565A1 SINGLE MODE OPTICAL COUPLER 审中-公开
公开(公告)号：US20170336565A1
公开(公告)日：2017-11-23
申请号：US15282728
申请日：2016-09-30
申请人： Judson D. Ryckman , Harel Frish , George A. Ghiurcan , Ansheng Liu , Haisheng Rong , Pradeep Srinivasan , Carsten Brandt , Isako Hoshino , Michael A. Creighton
发明人： Judson D. Ryckman , Harel Frish , George A. Ghiurcan , Ansheng Liu , Haisheng Rong , Pradeep Srinivasan , Carsten Brandt , Isako Hoshino , Michael A. Creighton
IPC分类号： G02B6/14 , G02B1/115 , G02B6/122 , G02B6/136 , G02B6/12
CPC分类号： G02B6/14 , G02B1/115 , G02B6/1228 , G02B6/136 , G02B2006/12097 , G02B2006/12104 , G02B2006/12147 , G02B2006/12157
摘要： Embodiments of the present disclosure are directed toward techniques and configurations for a single mode optical coupler device. In some embodiments, the device may include a multi-stage optical taper to convert light from a first mode field diameter to a second mode field diameter larger than the first mode field diameter, and a mirror formed in a dielectric layer under an approximately 45 degree angle with respect to a plane of the dielectric layer to reflect light from the multi-stage optical taper substantially perpendicularly to propagate the light in a single mode fashion. Other embodiments may be described and/or claimed.

9. 发明申请

US20140008750A1 PHOTONIC DEVICE WITH A CONDUCTIVE SHUNT LAYER 有权
标题翻译：具有导电分层的光电器件
公开(公告)号：US20140008750A1
公开(公告)日：2014-01-09
申请号：US13977390
申请日：2012-03-29
申请人： Avi Feshali , Tao Sherry Yin , Ansheng Liu
发明人： Avi Feshali , Tao Sherry Yin , Ansheng Liu
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L31/0232 , H01L31/02325 , H01L31/10 , H01L31/102 , H01L31/18
摘要： Described are embodiments of apparatuses and systems including photonic devices having a conductive shunt layer, and methods for making such apparatuses and systems. A photonic device may include a device substrate, a photo-active region disposed on a first region of the device substrate, an isolation region in the device substrate, a contact disposed on a second region of the substrate such that the isolation region is located between the contact and the photo-active region, and a conductive material overlying the isolation region to shunt the first region with the second region. Other embodiments may be described and/or claimed.
摘要翻译：描述了包括具有导电分流层的光子器件的装置和系统的实施例，以及用于制造这种装置和系统的方法。光子器件可以包括器件衬底，设置在器件衬底的第一区域上的光有源区，器件衬底中的隔离区，设置在衬底的第二区上的接触，使得隔离区位于所述接触和所述光活性区域以及覆盖所述隔离区域的导电材料以与所述第二区域分流所述第一区域。可以描述和/或要求保护其他实施例。

10. 发明授权

US07747122B2 Method and apparatus for high speed silicon optical modulation using PN diode 有权
标题翻译：使用PN二极管的高速硅光调制方法和装置
公开(公告)号：US07747122B2
公开(公告)日：2010-06-29
申请号：US12242454
申请日：2008-09-30
申请人： Yoel Shetrit , Ling Liao , Ansheng Liu
发明人： Yoel Shetrit , Ling Liao , Ansheng Liu
IPC分类号： G02B6/10 , G02F1/01
CPC分类号： G02B6/12004 , G02B2006/12142 , G02F1/025 , G02F1/225 , G02F1/2257
摘要： A method and apparatus for high speed silicon optical modulation is described using a PN diode. In one example, an optical waveguide has adjoining first and second doped semiconductor regions. The first and second regions have opposite doping types and the first doped region extends in two perpendicular directions through the waveguide.
摘要翻译：使用PN二极管描述用于高速硅光调制的方法和装置。在一个示例中，光波导具有邻接的第一和第二掺杂半导体区域。第一和第二区域具有相反的掺杂类型，并且第一掺杂区域在两个垂直方向上延伸穿过波导。

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