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1. 发明授权

US08866247B2 Photonic device with a conductive shunt layer 有权
标题翻译：具有导电分流层的光子器件
公开(公告)号：US08866247B2
公开(公告)日：2014-10-21
申请号：US13977390
申请日：2012-03-29
申请人： Avi Feshali , Tao Sherry Yin , Ansheng Liu
发明人： Avi Feshali , Tao Sherry Yin , Ansheng Liu
IPC分类号： H01L31/0232 , H01L21/00 , H01L31/102 , H01L31/10 , H01L31/18
CPC分类号： H01L31/0232 , H01L31/02325 , H01L31/10 , H01L31/102 , H01L31/18
摘要： Described are embodiments of apparatuses and systems including photonic devices having a conductive shunt layer, and methods for making such apparatuses and systems. A photonic device may include a device substrate, a photo-active region disposed on a first region of the device substrate, an isolation region in the device substrate, a contact disposed on a second region of the substrate such that the isolation region is located between the contact and the photo-active region, and a conductive material overlying the isolation region to shunt the first region with the second region. Other embodiments may be described and/or claimed.
摘要翻译：描述了包括具有导电分流层的光子器件的装置和系统的实施例，以及用于制造这种装置和系统的方法。光子器件可以包括器件衬底，设置在器件衬底的第一区域上的光有源区，器件衬底中的隔离区，设置在衬底的第二区上的接触，使得隔离区位于所述接触和所述光活性区域以及覆盖所述隔离区域的导电材料以与所述第二区域分流所述第一区域。可以描述和/或要求保护其他实施例。

2. 发明申请

US20140307997A1 HYBRID INTEGRATION OF GROUP III-V SEMICONDUCTOR DEVICES ON SILICON 审中-公开
标题翻译：硅组III-V族半导体器件的混合集成
公开(公告)号：US20140307997A1
公开(公告)日：2014-10-16
申请号：US13976913
申请日：2011-12-20
申请人： Hanan Bar , John Heck , Avi Feshali , Ran Feldesh
发明人： Hanan Bar , John Heck , Avi Feshali , Ran Feldesh
IPC分类号： G02B6/122 , H01L21/8252 , H01L29/205 , G02B6/13
CPC分类号： G02B6/1225 , G02B6/12004 , G02B6/13 , G02B2006/12061 , H01L21/28575 , H01L21/8252 , H01L21/8258 , H01L21/84 , H01L27/1203 , H01L29/205
摘要： Photonic passivation layers, III-V semiconductor die with offcut edges, and NiGe contact metallization for silicon-based photonic integrated circuits (PICs). In embodiments, a non-sacrificial passivation layer is formed on a silicon photonic element, such as a waveguide for protection of the waveguide surfaces. In embodiments, a III-V semiconductor film is transferred from a III-V growth substrate that is singulated along streets that are misaligned from cleave planes to avoid crystallographic etch artifacts in a layer transfer process. In embodiments, a NiGe contact metallization is employed for both p-type and n-type contacts on a device formed in the transferred III-V semiconductor layer to provide low specific contact resistance and compatibility with MOS processes.
摘要翻译：光子钝化层，具有切割边缘的III-V半导体管芯和用于硅基光子集成电路（PIC）的NiGe接触金属化。在实施例中，在硅光子元件（例如用于保护波导表面的波导）上形成非牺牲钝化层。在实施例中，III-V半导体膜从沿切割面不对准的街道上被切割的III-V生长衬底转移，以避免层转移过程中的晶体学蚀刻伪影。在实施例中，NiGe接触金属化用于形成在转移的III-V半导体层中的器件上的p型和n型触点，以提供低的比接触电阻和与MOS工艺的兼容性。

3. 发明申请

US20080046012A1 METHOD AND SYSTEM FOR MODULATING ENERGY EXPENDITURE AND NEUROTROPHIC FACTORS 审中-公开
标题翻译：调节能源支出和神经营养因子的方法和系统
公开(公告)号：US20080046012A1
公开(公告)日：2008-02-21
申请号：US11851821
申请日：2007-09-07
申请人： Alejandro Covalin , Jack Judy , Avi Feshali
发明人： Alejandro Covalin , Jack Judy , Avi Feshali
IPC分类号： A61N1/00
CPC分类号： A61N1/36025 , A61N1/36082
摘要： A method system for modulating the energy expenditure and/or the expressed brain-derived neurotrophic factor (BDNF) in the brain of an individual is performed by a system that includes a control device that generates a stimulation pattern from a predetermined set of stimulation parameters, and that converts the stimulation pattern into a stimulation signal. A stimulation signal delivery mechanism, configured for implantation into a selected part of the brain, receives the stimulation signal from the control device and delivers the signal to the selected part of the brain. The stimulation signal may be an electrical signal delivered by a brain-implantable electrode, or a chemical signal in the form of a drug dosage regimen delivered by an implantable micropump under the control of the control device. Modulation of the energy expenditure and/or BDNF is achieved by the stimulation of the hypothalamus, either directly or indirectly, by the stimulation signal.
摘要翻译：用于调节个体脑中能量消耗和/或表达的脑源性神经营养因子（BDNF）的方法系统由包括从预定刺激参数组产生刺激模式的控制装置的系统执行，并将刺激模式转换为刺激信号。被配置为植入到脑的选定部分中的刺激信号传递机构接收来自控制装置的刺激信号，并将该信号传送到脑的选定部分。刺激信号可以是由脑可植入电极传递的电信号，或者是由控制装置的控制下由可植入的微型泵递送的药物剂量形式的化学信号。通过刺激信号直接或间接地刺激下丘脑来实现能量消耗和/或BDNF的调节。

4. 发明申请

US20140008750A1 PHOTONIC DEVICE WITH A CONDUCTIVE SHUNT LAYER 有权
标题翻译：具有导电分层的光电器件
公开(公告)号：US20140008750A1
公开(公告)日：2014-01-09
申请号：US13977390
申请日：2012-03-29
申请人： Avi Feshali , Tao Sherry Yin , Ansheng Liu
发明人： Avi Feshali , Tao Sherry Yin , Ansheng Liu
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L31/0232 , H01L31/02325 , H01L31/10 , H01L31/102 , H01L31/18
摘要： Described are embodiments of apparatuses and systems including photonic devices having a conductive shunt layer, and methods for making such apparatuses and systems. A photonic device may include a device substrate, a photo-active region disposed on a first region of the device substrate, an isolation region in the device substrate, a contact disposed on a second region of the substrate such that the isolation region is located between the contact and the photo-active region, and a conductive material overlying the isolation region to shunt the first region with the second region. Other embodiments may be described and/or claimed.
摘要翻译：描述了包括具有导电分流层的光子器件的装置和系统的实施例，以及用于制造这种装置和系统的方法。光子器件可以包括器件衬底，设置在器件衬底的第一区域上的光有源区，器件衬底中的隔离区，设置在衬底的第二区上的接触，使得隔离区位于所述接触和所述光活性区域以及覆盖所述隔离区域的导电材料以与所述第二区域分流所述第一区域。可以描述和/或要求保护其他实施例。

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