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1. 发明授权

US06791805B2 Current-perpendicular-to-plane spin valve reader with reduced scattering of majority spin electrons 有权
标题翻译：电流垂直于平面的自旋阀读数器，其大部分自旋电子的散射减小
公开(公告)号：US06791805B2
公开(公告)日：2004-09-14
申请号：US10113079
申请日：2002-04-01
申请人： Olle Gunnar Heinonen , Michael Seigler , Eric W. Singleton
发明人： Olle Gunnar Heinonen , Michael Seigler , Eric W. Singleton
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3143 , G11B5/3903 , G11B2005/3996
摘要： A giant magnetoresistive (GMR) stack configured to operate in a current-perpendicular-to-plane (CPP) mode includes a ferromagnetic free layer, at least one synthetic antiferromagnet, at least one nonmagnetic spacer layer, and at least one antiferromagnetic pinning layer. The ferromagnetic free layer has a rotatable magnetic moment. The synthetic antiferromagnet includes a ferromagnetic reference layer having a fixed magnetic moment, a ferromagnetic pinned layer having a fixed magnetic moment, and a coupling layer positioned between the reference layer and the pinned layer, wherein the coupling layer is selected from the group consisting of Cu, Ag and CuAg. The nonmagnetic spacer layer is positioned between the free layer and the synthetic antiferromagnet. The antiferromagnetic pinning layer is positioned adjacent to the synthetic antiferromagnet.
摘要翻译：配置为以电流垂直于平面（CPP）模式操作的巨磁阻（GMR）堆叠包括铁磁自由层，至少一个合成反铁磁体，至少一个非磁性间隔层和至少一个反铁磁钉扎层。铁磁自由层具有可旋转的磁矩。合成反铁磁体包括具有固定磁矩的铁磁参考层，具有固定磁矩的铁磁性固定层和位于参考层和被钉扎层之间的耦合层，其中耦合层选自Cu ，Ag和CuAg。非磁性间隔层位于自由层和合成反铁磁体之间。反铁磁钉扎层位于合成反铁磁体附近。

2. 发明授权

US08477443B2 Pulse writing for bit patterned and continuous media recording 有权
标题翻译：脉冲写入用于位图和连续介质记录
公开(公告)号：US08477443B2
公开(公告)日：2013-07-02
申请号：US12506748
申请日：2009-07-21
申请人： Kaizhong Gao , Olle Gunnar Heinonen , Jianhua Xue , Wenzhong Zhu
发明人： Kaizhong Gao , Olle Gunnar Heinonen , Jianhua Xue , Wenzhong Zhu
IPC分类号： G11B5/09 , G11B5/03
CPC分类号： G11B20/10009 , B82Y10/00 , G11B5/09 , G11B5/743 , G11B2220/2516 , G11B2220/252
摘要： Data storage systems are provided. Data storage systems illustratively include a writing element and a recording medium. In some embodiments, the writing element generates first and second magnetization fields that respectively record first and second magnetization patterns to the recording medium. In some embodiments, the writing element is de-saturated between recording the first and second magnetization patterns.
摘要翻译：提供数据存储系统。数据存储系统示例性地包括写入元件和记录介质。在一些实施例中，写入元件产生分别将第一和第二磁化模式记录到记录介质的第一和第二磁化场。在一些实施例中，在记录第一和第二磁化模式之间，写入元件被去饱和。

3. 发明授权

US08295072B2 Magnetic random access memory (MRAM) utilizing magnetic flip-flop structures 有权
标题翻译：磁性随机存取存储器（MRAM）利用磁性触发器结构
公开(公告)号：US08295072B2
公开(公告)日：2012-10-23
申请号：US13074384
申请日：2011-03-29
申请人： Dimitar V. Dimitrov , Olle Gunnar Heinonen , Yiran Chen , Haiwen Xi , Xiaohua Lou
发明人： Dimitar V. Dimitrov , Olle Gunnar Heinonen , Yiran Chen , Haiwen Xi , Xiaohua Lou
IPC分类号： G11C17/06
CPC分类号： H01L27/224 , G11C7/04 , G11C11/161 , G11C11/1659 , H01L43/08
摘要： Non-volatile magnetic random access memory (MRAM) devices that include magnetic flip-flop structures that include a magnetization controlling structure; a first tunnel barrier structure; and a magnetization controllable structure that includes a first polarizing layer; and a first stabilizing layer, wherein the first tunnel barrier structure is between the magnetization controllable structure and the magnetization controlling structure and the first polarizing layer is between the first stabilizing layer and the first tunnel barrier structure, wherein the magnetic flip-flop device has two stable overall magnetic; configurations a second tunnel barrier structure and a reference layer, wherein the second tunnel barrier structure is between the magnetic flip-flop device and the reference layer.
摘要翻译：包括包含磁化控制结构的磁触发器结构的非易失磁性随机存取存储器（MRAM）器件; 第一隧道屏障结构; 以及包括第一偏振层的可磁化控制结构; 以及第一稳定层，其中所述第一隧道势垒结构在所述可磁化控制结构和所述磁化控制结构之间，并且所述第一偏振层位于所述第一稳定层和所述第一隧道势垒结构之间，其中所述磁性触发器装置具有两个稳定整体磁性; 配置第二隧道势垒结构和参考层，其中所述第二隧道势垒结构位于所述磁触发器件和所述参考层之间。

4. 发明授权

US08125746B2 Magnetic sensor with perpendicular anisotrophy free layer and side shields 有权
标题翻译：具有垂直各向异性自由层和侧面屏蔽的磁性传感器
公开(公告)号：US08125746B2
公开(公告)日：2012-02-28
申请号：US12502204
申请日：2009-07-13
申请人： Dimitar V. Dimitrov , Zheng Gao , Wonjoon Jung , Paul Edward Anderson , Olle Gunnar Heinonen
发明人： Dimitar V. Dimitrov , Zheng Gao , Wonjoon Jung , Paul Edward Anderson , Olle Gunnar Heinonen
IPC分类号： G11B5/127
CPC分类号： G11B5/398 , G01R33/098 , G11B5/3912 , H01L43/08
摘要： A tunneling magneto-resistive reader includes a sensor stack separating a top magnetic shield from a bottom magnetic shield. The sensor stack includes a reference magnetic element having a reference magnetization orientation direction and a free magnetic element having a free magnetization orientation direction substantially perpendicular to the reference magnetization orientation direction. A non-magnetic spacer layer separates the reference magnetic element from the free magnetic element. A first side magnetic shield and a second side magnetic shield is disposed between the top magnetic shield from a bottom magnetic shield, and the sensor stack is between the first side magnetic shield and the second side magnetic shield. The first side magnetic shield and the second side magnetic shield electrically insulates the top magnetic shield from a bottom magnetic shield.
摘要翻译：隧道磁阻读取器包括将顶部磁屏蔽与底部磁屏蔽分开的传感器堆叠。传感器堆叠包括具有参考磁化取向方向的参考磁性元件和具有基本上垂直于参考磁化定向方向的自由磁化取向方向的自由磁性元件。非磁性间隔层将参考磁性元件与自由磁性元件分开。第一侧磁屏蔽和第二侧磁屏蔽设置在顶部磁屏蔽与底部磁屏蔽之间，传感器堆叠位于第一侧磁屏蔽和第二侧磁屏蔽之间。第一侧磁屏蔽和第二侧磁屏蔽将顶部磁屏蔽与底部磁屏蔽电绝缘。

5. 发明授权

US08077503B2 Electronic devices utilizing spin torque transfer to flip magnetic orientation 有权
公开(公告)号：US08077503B2
公开(公告)日：2011-12-13
申请号：US13070542
申请日：2011-03-24
申请人： Dimitar V. Dimitrov , Olle Gunnar Heinonen , Yiran Chen , Haiwen Xi , Xiaohua Lou
发明人： Dimitar V. Dimitrov , Olle Gunnar Heinonen , Yiran Chen , Haiwen Xi , Xiaohua Lou
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/161 , G11C11/1659 , H01F10/3254 , H01F10/3272 , H01F10/3286 , Y10S977/935
摘要： Electronic devices that include (i) a magnetization controlling structure; (ii) a tunnel barrier structure; and (iii) a magnetization controllable structure including: a first polarizing layer; and a first stabilizing layer, wherein the tunnel barrier structure is between the magnetization controlling structure and the magnetization controlling structure and the first polarizing layer is between the first stabilizing layer and the tunnel barrier structure, wherein the electronic device has two stable overall magnetic configurations, and wherein a first unipolar current applied to the electronic device will cause the orientation of the magnetization controlling structure to reverse its orientation and a second unipolar current applied to the electronic device will cause the magnetization controllable structure to switch its magnetization in order to obtain one of the two stable overall magnetic configurations, wherein the second unipolar current has an amplitude that is less than the first unipolar current.

6. 发明申请

US20100085803A1 ELECTRONIC DEVICES UTILIZING SPIN TORQUE TRANSFER TO FLIP MAGNETIC ORIENTATION 有权
标题翻译：使用旋转扭矩的电子设备转移到浮动磁场定向
公开(公告)号：US20100085803A1
公开(公告)日：2010-04-08
申请号：US12415243
申请日：2009-03-31
申请人： Dimitar V. Dimitrov , Olle Gunnar Heinonen , Yiran Chen , Haiwen Xi , Xiaohua Lou
发明人： Dimitar V. Dimitrov , Olle Gunnar Heinonen , Yiran Chen , Haiwen Xi , Xiaohua Lou
IPC分类号： G11C11/00 , H01L29/82 , G11C11/14
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/161 , G11C11/1659 , H01F10/3254 , H01F10/3272 , H01F10/3286 , Y10S977/935
摘要： Electronic devices that include (i) a magnetization controlling structure; (ii) a tunnel barrier structure; and (iii) a magnetization controllable structure including: a first polarizing layer; and a first stabilizing layer, wherein the tunnel barrier structure is between the magnetization controlling structure and the magnetization controlling structure and the first polarizing layer is between the first stabilizing layer and the tunnel barrier structure, wherein the electronic device has two stable overall magnetic configurations, and wherein a first unipolar current applied to the electronic device will cause the orientation of the magnetization controlling structure to reverse its orientation and a second unipolar current applied to the electronic device will cause the magnetization controllable structure to switch its magnetization in order to obtain one of the two stable overall magnetic configurations, wherein the second unipolar current has an amplitude that is less than the first unipolar current.
摘要翻译：电子设备，其包括（i）磁化控制结构; （ii）隧道屏障结构; 和（iii）可磁化控制结构，包括：第一偏振层; 以及第一稳定层，其中所述隧道势垒结构在所述磁化控制结构和所述磁化控制结构之间，并且所述第一偏振层位于所述第一稳定层和所述隧道势垒结构之间，其中所述电子器件具有两个稳定的整体磁性构造，并且其中施加到所述电子器件的第一单极电流将导致所述磁化控制结构的取向反转其取向，并且施加到所述电子器件的第二单极电流将导致所述磁化可控结构切换其磁化，以获得两个稳定的整体磁性配置，其中第二单极性电流具有小于第一单极电流的幅度。

7. 发明授权

US06762915B2 Magnetoresistive sensor with oversized pinned layer 有权
标题翻译：具有超大钉扎层的磁阻传感器
公开(公告)号：US06762915B2
公开(公告)日：2004-07-13
申请号：US10056729
申请日：2002-01-25
申请人： Taras Grigoryevich Pokhil , Olle Gunnar Heinonen , Chunhong Hou
发明人： Taras Grigoryevich Pokhil , Olle Gunnar Heinonen , Chunhong Hou
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , G11B2005/0008 , G11B2005/3996
摘要： A magnetoresistive stack for use in a magnetic read head has a plurality of layers including a ferromagnetic free layer, a ferromagnetic pinned layer, and an antiferromagnetic pinning layer. The pinned layer and pinning layer each have a greater number of structural grains than the free layer, which decreases a fluctuation of magnetization in the magnetoresistive stack without decreasing a spatial resolution of the magnetoresistive stack.
摘要翻译：用于磁读头的磁阻堆具有包括铁磁自由层，铁磁性钉扎层和反铁磁钉扎层的多个层。钉扎层和钉扎层各自具有比自由层更多数量的结构晶粒，这降低了磁阻堆叠中的磁化的波动，而不降低磁阻堆叠的空间分辨率。

8. 发明授权

US08400867B2 Non-volatile memory with stray magnetic field compensation 有权
标题翻译：具有杂散磁场补偿的非易失性存储器
公开(公告)号：US08400867B2
公开(公告)日：2013-03-19
申请号：US13316972
申请日：2011-12-12
申请人： Dimitar Dimitrov , Olle Gunnar Heinonen , Dexin Wang , Haiwen Xi
发明人： Dimitar Dimitrov , Olle Gunnar Heinonen , Dexin Wang , Haiwen Xi
IPC分类号： G11C8/00
CPC分类号： H01L43/02 , G11C11/16 , G11C11/161 , H01L43/08
摘要： A method and apparatus for stray magnetic field compensation in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a first tunneling barrier is coupled to a reference structure that has a perpendicular anisotropy and a first magnetization direction. A recording structure that has a perpendicular anisotropy is coupled to the first tunneling barrier and a nonmagnetic spacer layer. A compensation layer that has a perpendicular anisotropy and a second magnetization direction in substantial opposition to the first magnetization direction is coupled to the nonmagnetic spacer layer. Further, the memory cell is programmable to a selected resistance state with application of a current to the recording structure.
摘要翻译：一种在非易失性存储单元中的杂散磁场补偿的方法和装置，例如自旋转矩传递随机存取存储器（STRAM）。在一些实施例中，第一隧道势垒耦合到具有垂直各向异性和第一磁化方向的参考结构。具有垂直各向异性的记录结构耦合到第一隧道势垒和非磁性间隔层。具有与第一磁化方向基本相对的垂直各向异性和第二磁化方向的补偿层耦合到非磁性间隔层。此外，通过向记录结构施加电流，可将存储单元编程为选定的电阻状态。

9. 发明申请

US20120081951A1 NON-VOLATILE MEMORY WITH STRAY MAGNETIC FIELD COMPENSATION 有权
标题翻译：非易失性存储器，带有磁场补偿
公开(公告)号：US20120081951A1
公开(公告)日：2012-04-05
申请号：US13316972
申请日：2011-12-12
申请人： Dimitar V. Dimitrov , Olle Gunnar Heinonen , Dexin Wang , Haiwen Xi
发明人： Dimitar V. Dimitrov , Olle Gunnar Heinonen , Dexin Wang , Haiwen Xi
IPC分类号： G11C11/00
CPC分类号： H01L43/02 , G11C11/16 , G11C11/161 , H01L43/08
摘要： A method and apparatus for stray magnetic field compensation in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a first tunneling barrier is coupled to a reference structure that has a perpendicular anisotropy and a first magnetization direction. A recording structure that has a perpendicular anisotropy is coupled to the first tunneling barrier and a nonmagnetic spacer layer. A compensation layer that has a perpendicular anisotropy and a second magnetization direction in substantial opposition to the first magnetization direction is coupled to the nonmagnetic spacer layer. Further, the memory cell is programmable to a selected resistance state with application of a current to the recording structure.
摘要翻译：一种在非易失性存储单元中的杂散磁场补偿的方法和装置，例如自旋转矩传递随机存取存储器（STRAM）。在一些实施例中，第一隧道势垒耦合到具有垂直各向异性和第一磁化方向的参考结构。具有垂直各向异性的记录结构耦合到第一隧道势垒和非磁性间隔层。具有与第一磁化方向基本相对的垂直各向异性和第二磁化方向的补偿层耦合到非磁性间隔层。此外，通过向记录结构施加电流，可将存储单元编程为选定的电阻状态。

10. 发明授权

US07933146B2 Electronic devices utilizing spin torque transfer to flip magnetic orientation 有权
标题翻译：使用自旋转矩传递来电磁方向的电子装置
公开(公告)号：US07933146B2
公开(公告)日：2011-04-26
申请号：US12415243
申请日：2009-03-31
申请人： Dimitar V. Dimitrov , Olle Gunnar Heinonen , Yiran Chen , Haiwen Xi , Xiaohua Lou
发明人： Dimitar V. Dimitrov , Olle Gunnar Heinonen , Yiran Chen , Haiwen Xi , Xiaohua Lou
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/161 , G11C11/1659 , H01F10/3254 , H01F10/3272 , H01F10/3286 , Y10S977/935
摘要： Electronic devices that include (i) a magnetization controlling structure; (ii) a tunnel barrier structure; and (iii) a magnetization controllable structure including: a first polarizing layer; and a first stabilizing layer, wherein the tunnel barrier structure is between the magnetization controlling structure and the magnetization controlling structure and the first polarizing layer is between the first stabilizing layer and the tunnel barrier structure, wherein the electronic device has two stable overall magnetic configurations, and wherein a first unipolar current applied to the electronic device will cause the orientation of the magnetization controlling structure to reverse its orientation and a second unipolar current applied to the electronic device will cause the magnetization controllable structure to switch its magnetization in order to obtain one of the two stable overall magnetic configurations, wherein the second unipolar current has an amplitude that is less than the first unipolar current.
摘要翻译：电子设备，其包括（i）磁化控制结构; （ii）隧道屏障结构; 和（iii）可磁化控制结构，包括：第一偏振层; 以及第一稳定层，其中所述隧道势垒结构在所述磁化控制结构和所述磁化控制结构之间，并且所述第一偏振层位于所述第一稳定层和所述隧道势垒结构之间，其中所述电子器件具有两个稳定的整体磁性构造，并且其中施加到所述电子器件的第一单极电流将导致所述磁化控制结构的取向反转其取向，并且施加到所述电子器件的第二单极电流将导致所述磁化可控结构切换其磁化，以获得两个稳定的整体磁性配置，其中第二单极性电流具有小于第一单极电流的幅度。

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