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1. 发明授权

US07487806B2 Source liquid supply apparatus having a cleaning function 有权
标题翻译：源液供给装置具有清洁功能
公开(公告)号：US07487806B2
公开(公告)日：2009-02-10
申请号：US10495775
申请日：2002-11-13
申请人： Olivier Letessier , Masao Kimura , Jean-Marc Girard , Akinobu Nasu
发明人： Olivier Letessier , Masao Kimura , Jean-Marc Girard , Akinobu Nasu
IPC分类号： B65B1/04
CPC分类号： B08B9/032 , B08B9/00 , C23C16/4402 , C23C16/45561
摘要： A source liquid supply apparatus and method that avoids leaving source liquid-and/or cleaning fluid-derived residues in the vicinity of the connection region between the source liquid feed conduit and the source tank. A flow-switching mechanism is attached to the source tank of a source liquid supply apparatus. This flow-switching mechanism has a first port connected to the discharge port conduit of the source tank, a second port connected to a feed conduit, and a third port connected to an exhaust conduit. The first port can be closed by a valve member on a diaphragm disposed within a common compartment while communication is maintained between the second and third ports. A cleaning fluid source and a purge gas source are connected to the feed conduit. Purge gas and cleaning fluid fed into the feed conduit are discharged from the second and third ports and through the exhaust conduit.
摘要翻译：源液供给装置和方法，其避免在源液体供给管道和源罐之间的连接区域附近留下源液体和/或清洁流体残留物。流动切换机构附接到源液体供应装置的源罐。这种流动切换机构具有连接到源罐的排出口导管的第一端口，连接到进料导管的第二端口和连接到排气导管的第三端口。第一端口可以通过设置在公共隔室内的隔膜上的阀构件封闭，同时在第二和第三端口之间保持通信。清洁流体源和净化气体源连接到进料导管。进料到进料管道中的吹扫气体和清洗液体从第二和第三端口排出并通过排气导管排出。

2. 发明申请

US20050109374A1 Source liquid supply apparatus having a cleaning function 有权
标题翻译：源液供给装置具有清洁功能
公开(公告)号：US20050109374A1
公开(公告)日：2005-05-26
申请号：US10495775
申请日：2002-11-13
申请人： Olivier Letessier , Masao Kimura , Jean-Marc Girard , Akinobu Nasu
发明人： Olivier Letessier , Masao Kimura , Jean-Marc Girard , Akinobu Nasu
IPC分类号： B08B9/00 , B08B9/02 , C23C16/44
CPC分类号： B08B9/032 , B08B9/00 , C23C16/4402 , C23C16/45561
摘要： (Problem) To provide a source liquid supply apparatus that avoids leaving source liquid- and/or cleaning fluid-derived residues in the vicinity of the joint or connection region between the source liquid feed conduit and the source tank. (Solution) A flow-switching mechanism Vc is attached to the source tank 22 of a source liquid supply apparatus 20. This flow-switching mechanism Vc has a first port 33 that is connected to the discharge port conduit 24 of the source tank 22, a second port 34 that is connected to a feed conduit 16, and a third port 35 that is connected to an exhaust conduit 25. The first port 33 can be closed by a valve member 43 on a diaphragm 42 disposed within a common compartment 38 while communication is maintained between the second and third ports 34 and 35. A cleaning fluid source 55 and a purge gas source 57 are connected to the feed conduit 16. Purge gas and cleaning fluid fed into the feed conduit 16 are discharged from the second and third ports 34 and 35 through the exhaust conduit 25.
摘要翻译：（问题）提供一种源液体供应装置，其避免在源液体进料导管和源罐之间的接头或连接区域附近留下源液体和/或清洁流体衍生的残留物。（解决方案）流动切换机构Vc安装在源液体供给装置20的源罐22上。该流量切换机构Vc具有与源罐22的排出口导管24连接的第一口33，连接到进料管道16的第二端口34和连接到排气管道25的第三端口35.第一端口33可以由设置在公共隔室38中的隔膜42上的阀构件43封闭，同时在第二和第三端口34和35之间保持通信。清洁流体源55和净化气体源57连接到进料导管16.进料到进料管道16中的吹扫气体和清洗流体从第二和第三端口34排出。端口34和35通过排气导管25。

3. 发明授权

US06656255B2 Copper source liquid for MOCVD processes and method for the preparation thereof 失效
标题翻译：用于MOCVD工艺的铜源液及其制备方法
公开(公告)号：US06656255B2
公开(公告)日：2003-12-02
申请号：US09961242
申请日：2001-09-25
申请人： Akinobu Nasu , Jean-Marc Girard
发明人： Akinobu Nasu , Jean-Marc Girard
IPC分类号： C09D524
CPC分类号： C23C16/4402 , C23C16/18 , H01L21/28556
摘要： Provided is a copper source liquid useful in MOCVD processes for forming copper thin films on semiconductor wafers. The source liquid comprises water and a source component wherein the source component contains at least 90 weight % Cu(hfac)TMVS and the copper source liquid preferably contains no more than 10 weight % water. The dissolved oxygen concentration in the water is established at no more than 0.5 ppm relative to the water. Decomposition of the Cu(hfac)TMVS is controlled in the present invention by lowering the dissolved oxygen concentration in the water. The resulting copper source liquid allows for improved reproducibility of CVD film quality by raising the capacity to control the amount of water addition to the copper source liquid used in MOCVD processes.
摘要翻译：提供了可用于在半导体晶片上形成铜薄膜的MOCVD工艺中的铜源液体。源液体包括水和源组分，其中源组分含有至少90重量％的Cu（hfac）TMVS，铜源液体优选含有不超过10重量％的水。水中的溶解氧浓度建立在相对于水不超过0.5ppm的范围内。通过降低水中的溶解氧浓度，可以在本发明中控制Cu（hfac）TMVS的分解。所得到的铜源液体通过提高用于控制在MOCVD工艺中使用的铜源液体的添加量的量来提高CVD膜质量的再现性。

4. 发明申请

US20090004372A1 Electroless Niwp Adhesion and Capping Layers for Tft Copper Gate Process 审中-公开
标题翻译：用于Tft铜栅工艺的无电Niwp粘合层和封盖层
公开(公告)号：US20090004372A1
公开(公告)日：2009-01-01
申请号：US11995312
申请日：2005-07-13
申请人： Akinobu Nasu , Shyan-Fang Chen , Yi-Tsung Chen , Tsu-An Lin , Chiung-Sheng Hsiung
发明人： Akinobu Nasu , Shyan-Fang Chen , Yi-Tsung Chen , Tsu-An Lin , Chiung-Sheng Hsiung
IPC分类号： B05D5/12 , C09K19/52 , B32B17/06
CPC分类号： C23C18/50 , C23C18/1844 , C23C18/1893 , Y10T428/1095
摘要： Electroless NiWP layers are used for TFT Cu gate process. The NiWP deposition process comprises the following steps. (a) Cleaning of the base surface using for example UV light, ozone solution and/or alkaline mixture solution, (b) micro-etching of the base surface using, e.g. diluted acid, (c) catalyzation of the base surface using, e.g. SnCl 2 and PdCl 2 solutions, (d) conditioning of the base surface using reducing agent solution, and (e) NiWP deposition. It has been discovered that NiWP layers deposited under certain conditions could provide good adhesion to the glass substrate and to the Cu layer with a good Cu barrier capability. A NiWP layer in useful for adhesion, capping and/or barrier layers for TFT Cu gate process (e.g. for flat screen display panels).
摘要翻译：无电镀NiWP层用于TFT Cu栅极工艺。 NiWP沉积工艺包括以下步骤。（a）使用例如UV光，臭氧溶液和/或碱性混合物溶液清洗基底表面，（b）使用例如紫外光，稀释的酸，（c）基底表面的催化。 SnCl 2和PdCl 2溶液，（d）使用还原剂溶液调节基底表面，和（e）NiWP沉积。已经发现，在某些条件下沉积的NiWP层可以对玻璃基底和具有良好Cu阻挡能力的Cu层提供良好的粘附性。用于TFT Cu栅极工艺（例如用于平板显示面板）的粘合，封盖和/或阻挡层的NiWP层。

5. 发明申请

US20100317191A1 COPPER INTERCONNECTION FOR FLAT PANEL DISPLAY MANUFACTURING 审中-公开
标题翻译：用于平板显示器制造的铜相互连接
公开(公告)号：US20100317191A1
公开(公告)日：2010-12-16
申请号：US12066929
申请日：2007-03-15
申请人： Akinobu Nasu , Yi-Tsung Chen , Shyuan-Fang Chen
发明人： Akinobu Nasu , Yi-Tsung Chen , Shyuan-Fang Chen
IPC分类号： H01L21/768
CPC分类号： H01L27/124
摘要： A method of depositing a copper interconnection layer on a substrate for use in a flat panel display interconnection system, comprising the steps of: a) coating said substrate with a photoresist layer; b) patterning said photoresist layer to obtain a patterned photoresist substrate comprising at least one trench patterned into said photoresist layer; c) providing a first catalyzation layer onto the patterned photoresist substrate; d) providing an electroless plated layer of an insulation layer deposited onto said first catalyzation layer; e) removing the successively superimposed photoresist layer, catalyzation layer and insulation layer except in the at least one trench, to obtain a pattern of the first catalyzation layer with an insulation layer deposited thereon.
摘要翻译：一种在用于平板显示器互连系统的衬底上沉积铜互连层的方法，包括以下步骤：a）用光致抗蚀剂层涂覆所述衬底; b）图案化所述光致抗蚀剂层以获得图案化的光致抗蚀剂基底，其包括图案化到所述光致抗蚀剂层中的至少一个沟槽; c）在图案化的光致抗蚀剂基底上提供第一催化层; d）提供沉积在所述第一催化层上的绝缘层的化学镀层; e）除去所述至少一个沟槽中的连续叠加的光致抗蚀剂层，催化层和绝缘层，以获得其上沉积有绝缘层的第一催化层的图案。

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