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    • 4. 发明授权
    • Copper source liquid for MOCVD processes and method for the preparation thereof
    • 用于MOCVD工艺的铜源液及其制备方法
    • US06656255B2
    • 2003-12-02
    • US09961242
    • 2001-09-25
    • Akinobu NasuJean-Marc Girard
    • Akinobu NasuJean-Marc Girard
    • C09D524
    • C23C16/4402C23C16/18H01L21/28556
    • Provided is a copper source liquid useful in MOCVD processes for forming copper thin films on semiconductor wafers. The source liquid comprises water and a source component wherein the source component contains at least 90 weight % Cu(hfac)TMVS and the copper source liquid preferably contains no more than 10 weight % water. The dissolved oxygen concentration in the water is established at no more than 0.5 ppm relative to the water. Decomposition of the Cu(hfac)TMVS is controlled in the present invention by lowering the dissolved oxygen concentration in the water. The resulting copper source liquid allows for improved reproducibility of CVD film quality by raising the capacity to control the amount of water addition to the copper source liquid used in MOCVD processes.
    • 提供了可用于在半导体晶片上形成铜薄膜的MOCVD工艺中的铜源液体。 源液体包括水和源组分,其中源组分含有至少90重量%的Cu(hfac)TMVS,铜源液体优选含有不超过10重量%的水。 水中的溶解氧浓度建立在相对于水不超过0.5ppm的范围内。 通过降低水中的溶解氧浓度,可以在本发明中控制Cu(hfac)TMVS的分解。 所得到的铜源液体通过提高用于控制在MOCVD工艺中使用的铜源液体的添加量的量来提高CVD膜质量的再现性。