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    • 4. 发明授权
    • Three level pre-buffer voltage level shifting circuit and method
    • 三级预缓冲电压电平转换电路及方法
    • US06268744B1
    • 2001-07-31
    • US09609022
    • 2000-06-30
    • Oleg DrapkinGrigori Temkine
    • Oleg DrapkinGrigori Temkine
    • H03K190185
    • H03K19/00315H03K19/018585
    • A buffer circuit utilizes a single gate oxide pre-buffer voltage level shifting circuit on, for example, an output buffer of an I/O pad, to accommodate different I/O pad supply voltages while maintaining normal operating voltages (degradation levels) across boundaries of single gate oxide devices that form the buffer. The single gate oxide output buffer can operate at several different supply voltages. A pre-buffer voltage level shifting circuit includes a multi-supply voltage level shifting circuit having signal gate oxide devices coupled to produce a pre-buffer output signal to an output buffer. A single gate oxide cross coupled active load is coupled to the multi-supply voltage level shifting circuit and provides suitable drive voltages to at least one of cascaded buffer transistors.
    • 缓冲电路在例如I / O焊盘的输出缓冲器上使用单栅极氧化物预缓冲器电压电平移位电路,以适应不同的I / O焊盘电源电压,同时保持跨越边界的正常工作电压(劣化电平) 的形成缓冲器的单栅极氧化物器件。 单栅极氧化物输出缓冲器可以在几种不同的电源电压下工作。 预缓冲器电压电平移位电路包括多电源电压移位电路,其具有被耦合以产生到缓冲器输出缓冲器的预缓冲器输出信号的信号栅极氧化器件。 单栅极氧化物交叉耦合有源负载耦合到多电源电压电平移位电路,并向级联缓冲晶体管中的至少一个提供合适的驱动电压。
    • 5. 发明授权
    • Powerup sequence artificial voltage supply circuit
    • 上电顺序人造电源电路
    • US6160430A
    • 2000-12-12
    • US274456
    • 1999-03-22
    • Oleg DrapkinGrigori Temkine
    • Oleg DrapkinGrigori Temkine
    • H03K19/003H03L7/00
    • H03K19/00315
    • A powerup sequencing circuit and method generates an artificial supply voltage until the actual supply voltage is at a suitable level. An artificial supply source, such as a pull up circuit, is coupled to a node that receives a first supply voltage, such as an I/O buffer voltage. The pull up circuit is also coupled to an isolatable source voltage node. The isolatable source voltage node is the node that causes the actual second supply voltage. A temporary isolation circuit is operatively coupled to the pull up circuit and is operatively interposed between the node that receives the first supply voltage and the isolatable source voltage node. The pull up circuit provides a temporary or artificial second supply voltage level to an on chip circuit, such as an I/O buffer circuit or other suitable circuit that may, for example, be multi-voltage supply dependent. The temporary supply voltage is provided to the on chip circuit during powerup and the temporary isolation circuit operatively isolates the isolatable source voltage node until the second supply voltage reaches a suitable level and turns off the temporary isolation circuit.
    • 上电顺序电路和方法产生人造电源电压,直到实际电源电压处于适当的电平。 诸如上拉电路的人造供电源耦合到接收诸如I / O缓冲器电压的第一电源电压的节点。 上拉电路还耦合到可隔离的源极电压节点。 可分离源电压节点是导致实际第二电源电压的节点。 临时隔离电路可操作地耦合到上拉电路,并且可操作地插入在接收第一电源电压的节点和可隔离源电压节点之间。 上拉电路为片上电路(例如I / O缓冲电路或其他合适的电路提供暂时或人造的第二电源电压),例如可能是多电压电源。 在上电期间临时供电电压被提供给片上电路,并且临时隔离电路可操作地隔离可隔离源电压节点,直到第二电源电压达到适当的电平并关断临时隔离电路。
    • 6. 发明授权
    • Dynamic voltage reference for sampling delta based temperature sensor
    • 采样基于温度传感器的动态参考电压
    • US09347836B2
    • 2016-05-24
    • US13296804
    • 2011-11-15
    • Grigori TemkineFilipp ChekmazovPaul EdelshteynOleg DrapkinKristina Au
    • Grigori TemkineFilipp ChekmazovPaul EdelshteynOleg DrapkinKristina Au
    • G01K7/01G06F1/20
    • G01K7/01G06F1/206
    • A system and method for measuring integrated circuit (IC) temperature. An integrated circuit (IC) includes a thermal sensor and data processing circuitry. The thermal sensor utilizes switched currents provided to a reference diode and a thermal diode. The ratios of the currents provided to each of these diodes may be chosen to provide a given delta value between the resulting sampled diode voltages. At a later time, a different ratio of currents may be provided to each of these diodes to provide a second given delta value between the resulting sampled diode voltages. A differential amplifier within the data processing circuitry may receive the analog sampled voltages and determine the delta values. Other components within the data processing circuitry may at least digitize and store one or both of the delta values. A difference between the digitized delta values may calculated and used to determine an IC temperature digitized code.
    • 一种用于测量集成电路(IC)温度的系统和方法。 集成电路(IC)包括热传感器和数据处理电路。 热传感器利用提供给参考二极管和热二极管的开关电流。 可以选择提供给这些二极管中的每一个的电流的比率以在所得到的采样二极管电压之间提供给定的Δ值。 在稍后的时间,可以向这些二极管中的每一个提供不同的电流比,以在得到的采样的二极管电压之间提供第二给定的Δ值。 数据处理电路内的差分放大器可以接收模拟采样电压并确定增量值。 数据处理电路内的其他组件可以至少数字化并存储增量值中的一个或两个。 可以计算数字化增量值之间的差异,并用于确定IC温度数字化代码。
    • 8. 发明授权
    • Single gate oxide differential receiver and method
    • 单栅极氧化物差分接收器及方法
    • US07239198B1
    • 2007-07-03
    • US09211469
    • 1998-12-14
    • Oleg DrapkinGrigori Temkine
    • Oleg DrapkinGrigori Temkine
    • G06G7/12
    • H03K19/018585H03K19/00315H03K19/018528
    • An integrated differential receiver includes a single gate oxide differential receiver and an associated switchable voltage supply circuit. The integrated differential receiver determines the desired receiver supply voltage and selects a supply voltage for the single gate oxide differential receiver. When a lower supply voltage is determined as the desired supply voltage, the integrated differential receiver automatically provides a supply voltage to the single gate oxide differential receiver with a voltage higher than the I/O pad supply voltage and higher than the maximum input signal voltage to increase the speed of operation for the differential receiver. The switchable voltage supply circuit is operatively responsive to a control signal which indicates the desired supply voltage for the I/O pad. In one embodiment, both the single gate oxide differential receiver and the switchable voltage supply circuit are single gate oxide circuits.
    • 集成差分接收器包括单个栅极氧化物差分接收器和相关联的可切换电压供应电路。 集成差分接收器确定所需的接收器电源电压,并选择单栅极氧化物差动接收器的电源电压。 当将较低电源电压确定为所需的电源电压时,集成差分接收器自动向单栅极氧化物差动接收器提供电压,其电压高于I / O焊盘电源电压,并高于最大输入信号电压 增加差动接收器的运行速度。 可切换电压供应电路可操作地响应于指示I / O焊盘所需电源电压的控制信号。 在一个实施例中,单栅极氧化物差动接收器和可切换电压供应电路都是单栅极氧化物电路。
    • 10. 发明授权
    • Pre-buffer voltage level shifting circuit and method
    • 预缓冲电压电平移位电路及方法
    • US06833746B2
    • 2004-12-21
    • US10123983
    • 2002-04-16
    • Oleg DrapkinGrigori Temkine
    • Oleg DrapkinGrigori Temkine
    • H03L500
    • H03K19/00315
    • A pre-buffer voltage level shifting circuit includes a multi-supply voltage level shifting circuit having single gate oxide devices coupled to produce a pre-buffer output signal to an output buffer. The pre-buffer output signal has a level within normal gate voltage operating levels of the single gate oxide devices for each of the least a plurality of supply voltages. In one embodiment, the multi-supply voltage level shifting circuit includes a current mirror coupled to at least one of the first or second power supply voltage and also uses a non-linear device, such as a transistor configured as a diode, which is coupled to the output of current mirror. The non-linear device is coupled to receive a digital input signal from a signal source, such as from a section of core logic. A switching circuit coupled to the non-linear device selectively activates the non-linear device based on a level of the digital input signal. The circuit, in effect, shifts the core logic supply voltage up to provide efficient and safe control of single oxide gate output buffer transistor devices, such as p-channel devices.
    • 预缓冲器电压电平移位电路包括多电源电压移位电路,其具有耦合以产生到输出缓冲器的预缓冲器输出信号的单个栅极氧化器件。 对于至少多个电源电压中的每一个,预缓冲器输出信号具有在单栅极氧化物器件的正常栅极电压工作电平内的电平。 在一个实施例中,多电源电压电平移位电路包括耦合到第一或第二电源电压中的至少一个的电流镜,并且还使用诸如被配置为二极管的晶体管的非线性器件,其被耦合 到电流镜的输出。 非线性装置被耦合以从信号源接收数字输入信号,例如来自核心逻辑的一部分。 耦合到非线性装置的开关电路基于数字输入信号的电平选择性地激活非线性装置。 实际上,该电路将核心逻辑电源电压移动,以提供对单个氧化物栅极输出缓冲晶体管器件(例如p沟道器件)的有效和安全的控制。