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1. 发明授权

US07094637B2 Method for minimizing the vapor deposition of tungsten oxide during the selective side wall oxidation of tungsten-silicon gates 有权
标题翻译：在钨硅栅极的选择性侧壁氧化期间最小化氧化钨的气相沉积的方法
公开(公告)号：US07094637B2
公开(公告)日：2006-08-22
申请号：US10694593
申请日：2003-10-27
申请人： Olaf Storbeck , Wilhelm Kegel , Jens-Uwe Sachse , Michael Stadtmüller , Regina Hayn , Erwin Schoer , Georg Roters , Steffen Frigge
发明人： Olaf Storbeck , Wilhelm Kegel , Jens-Uwe Sachse , Michael Stadtmüller , Regina Hayn , Erwin Schoer , Georg Roters , Steffen Frigge
IPC分类号： H01L21/337
CPC分类号： H01L21/32105 , H01L21/28061
摘要： During a selective oxidation of gate structures that includes a polycrystalline silicon layer and a tungsten layer, which is known per se, a vapor deposition of tungsten oxide is prevented or at least greatly reduced by a special process. The gate structure is acted on by a hydrogen-containing, nonaqueous inert gas before and, if appropriate, after a treatment step with a hydrogen/water mixture.
摘要翻译：在包括本身已知的多晶硅层和钨层的栅极结构的选择性氧化期间，通过特殊工艺防止或至少大大降低了氧化钨的气相沉积。栅极结构在氢/水混合物的处理步骤之前和（如果合适的话）之后由含氢非水惰性气体起作用。

2. 发明申请

US20090039458A1 INTEGRATED DEVICE 审中-公开
标题翻译：集成设备
公开(公告)号：US20090039458A1
公开(公告)日：2009-02-12
申请号：US11837127
申请日：2007-08-10
申请人： Philip Stopford , Henry Heidemeyer , Hans-Peter Moll , Olaf Storbeck , Regina Hayn , Wieland Pethe
发明人： Philip Stopford , Henry Heidemeyer , Hans-Peter Moll , Olaf Storbeck , Regina Hayn , Wieland Pethe
IPC分类号： H01L29/00 , H01L21/311 , H01L21/762
CPC分类号： H01L21/31662 , H01L21/02238 , H01L21/02299 , H01L21/3121 , H01L21/3125 , H01L21/316 , H01L21/76237
摘要： A method of fabricating an integrated device on a substrate with an exposed surface region is disclosed. One embodiment provides introducing a first component into the exposed surface region of the substrate. A material is provided on the exposed surface region. The material on the exposed surface region is cured and the first component release from the exposed surface region of the substrate.
摘要翻译：公开了一种在具有暴露表面区域的基板上制造集成器件的方法。一个实施例提供了将第一组分引入衬底的暴露表面区域。在暴露的表面区域上提供材料。暴露表面区域上的材料被固化，并且第一组分从基底的暴露表面区域释放。

3. 发明申请

US20080211115A1 Semiconductor structure and an apparatus and a method for producing a semiconductor structure 审中-公开
标题翻译：半导体结构以及半导体结构的制造装置及其制造方法
公开(公告)号：US20080211115A1
公开(公告)日：2008-09-04
申请号：US11713568
申请日：2007-03-02
申请人： Olaf Storbeck , Regina Hayn
发明人： Olaf Storbeck , Regina Hayn
IPC分类号： H01L23/29
CPC分类号： H01L21/3144 , H01L21/0214 , H01L21/02238 , H01L21/02252 , H01L21/02332 , H01L21/0234 , H01L21/31662
摘要： In a method of forming an insulating layer on a silicon substrate, the silicon substrate is arranged inside a process chamber. An oxide layer is formed on the substrate's surface. An electrical field is applied and an oxygen particles containing plasma is provided above the substrate's surface. The electrical field accelerates the oxygen particles in the direction of the surface so that the oxygen particles penetrate inside the substrate and form said oxide layer. Thereafter, the stoichiometry of the oxide layer is modified. A nitrogen particles containing plasma is provided above the substrate's surface. The electrical field accelerates the nitrogen particles in the direction of the surface so that the nitrogen particles penetrate inside the oxide layer and modify the stoichiometry of the oxide layer. The step of forming the oxide layer and the step of modifying the stoichiometry are carried out inside the same process chamber.
摘要翻译：在硅衬底上形成绝缘层的方法中，硅衬底布置在处理室的内部。在基板的表面上形成氧化物层。施加电场，并且在基板表面上方设置含有等离子体的氧颗粒。电场在表面的方向上加速氧颗粒，使得氧颗粒穿透衬底内并形成所述氧化物层。此后，改变氧化物层的化学计量。含有等离子体的氮颗粒设置在基板的表面上方。电场在表面的方向上加速氮颗粒，使得氮颗粒穿透氧化物层内部并改变氧化物层的化学计量。形成氧化物层的步骤和改变化学计量的步骤在相同的处理室内进行。

4. 发明申请

US20050118777A1 Trench capacitor structure and process for applying a covering layer and a mask for trench etching processes in semiconductor substrates 失效
标题翻译：沟槽电容器结构和用于在半导体衬底中施加用于沟槽蚀刻工艺的覆盖层和掩模的工艺
公开(公告)号：US20050118777A1
公开(公告)日：2005-06-02
申请号：US10974797
申请日：2004-10-28
申请人： Henry Bernhardt , Michael Stadtmuller , Olaf Storbeck , Stefan Kainz
发明人： Henry Bernhardt , Michael Stadtmuller , Olaf Storbeck , Stefan Kainz
IPC分类号： H01L21/20 , H01L21/308 , H01L21/31 , H01L21/314 , H01L21/318 , H01L21/334 , H01L21/469 , H01L21/8242 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/10861 , H01L21/3081 , H01L21/3144 , H01L21/3185 , H01L27/1087 , H01L29/66181
摘要： A stress relief layer between a single-crystal semiconductor substrate and a deposited silicon nitride layer or pad nitride is formed from thermally produced silicon nitride. The stress relief layer made from thermally produced silicon nitride replaces a silicon dioxide layer or pad oxide which is customary at this location for example in connection with mask layers. After patterning of a mask, which includes a protective layer portion formed from deposited silicon nitride, the material which is provided according to the invention for the stress relief layer reduces the restrictions imposed for subsequent process steps, such as for example wet-etching steps, acting both on the semiconductor substrate or structures in the semiconductor substrate and also on the stress relief layer. The thermal nitriding is advantageously incorporated into a preanneal step for expelling oxygen from the semiconductor substrate, so that the semiconductor substrate is protected from the etching action of the expelled oxygen by the stress relief layer which is formed, there is no need for an additional temporary etching protection layer for the semiconductor substrate and the overall processing is streamlined.
摘要翻译：单晶半导体衬底和沉积的氮化硅层或衬垫氮化物之间的应力消除层由热生产的氮化硅形成。由热产生的氮化硅制成的应力消除层代替例如与掩模层结合在该位置上通常的二氧化硅层或焊盘氧化物。在包括由沉积的氮化硅形成的保护层部分的掩模图案化之后，根据本发明为应力消除层提供的材料减少了对随后的工艺步骤施加的限制，例如湿蚀刻步骤，在半导体衬底或半导体衬底中的结构以及应力消除层上均起作用。热氮化有利地结合到用于从半导体衬底排出氧的预退火步骤中，使得半导体衬底被形成的应力消除层免受排出的氧的蚀刻作用，不需要额外的临时用于半导体衬底的蚀刻保护层和整体处理被简化。

5. 发明授权

US09356175B2 Photovoltaic module, method for electrically connecting a plurality of photovoltaic cells, and device for electrically connecting a plurality of photovoltaic cells 有权
标题翻译：光电模块，用于电连接多个光伏电池的方法，以及用于电连接多个光伏电池的装置
公开(公告)号：US09356175B2
公开(公告)日：2016-05-31
申请号：US13095930
申请日：2011-04-28
申请人： Olaf Storbeck , Martin Kutzer , Harald Hahn , Holger Neuhaus
发明人： Olaf Storbeck , Martin Kutzer , Harald Hahn , Holger Neuhaus
IPC分类号： H01L31/044 , H01L31/05 , H02S10/10
CPC分类号： H01L31/0504 , H02S10/10 , Y02E10/50 , Y10T29/5313
摘要： In various embodiments, a photovoltaic module may include: a plurality of photovoltaic cells, at least one photovoltaic cell of the number of photovoltaic cells comprising: a first plurality of contact wires on a front of the photovoltaic cell; and a second plurality of contact wires on a rear of the photovoltaic cell. The first plurality of contact wires and the second plurality of contact wires may be arranged offset with respect to one another.
摘要翻译：在各种实施例中，光伏模块可以包括：多个光伏电池，多个光伏电池的至少一个光伏电池，包括：在光伏电池的前面的第一多个接触导线; 以及在所述光伏电池的后部上的第二多个接触导线。第一多个接触线和第二多个接触线可以相对于彼此偏移地布置。

6. 发明申请

US20110290298A1 SOLAR CELL, SOLAR MODULE, AND METHOD FOR WIRING A SOLAR CELL, AND CONTACT WIRE 审中-公开
标题翻译：太阳能电池，太阳能电池组件，以及用于接线太阳能电池和接线的方法
公开(公告)号：US20110290298A1
公开(公告)日：2011-12-01
申请号：US13116041
申请日：2011-05-26
申请人： Andreas Krause , Martin Kutzer , Olaf Storbeck , Alexander Fuelle
发明人： Andreas Krause , Martin Kutzer , Olaf Storbeck , Alexander Fuelle
IPC分类号： H01L31/05 , H01L31/18 , H01B5/00 , H01L31/0224
CPC分类号： H01L31/0508 , H01L31/022433 , H01L31/0516 , Y02E10/50
摘要： In various exemplary embodiments, a solar cell is provided, including a layer structure having at least one photovoltaic layer; and a plurality of contact wires running on the surface of the layer structure. The contact wires are wire-bonded radially with respect to their axis onto the surface of the layer structure.
摘要翻译：在各种示例性实施例中，提供太阳能电池，其包括具有至少一个光伏层的层结构; 以及在层结构的表面上延伸的多个接触导线。接触线相对于它们的轴线径向线接合到层结构的表面上。

7. 发明授权

US07547646B2 Trench capacitor structure and process for applying a covering layer and a mask for trench etching processes in semiconductor substrates 失效
标题翻译：沟槽电容器结构和用于在半导体衬底中施加用于沟槽蚀刻工艺的覆盖层和掩模的工艺
公开(公告)号：US07547646B2
公开(公告)日：2009-06-16
申请号：US10974797
申请日：2004-10-28
申请人： Henry Bernhardt , Michael Stadtmüller , Olaf Storbeck , Stefan Kainz
发明人： Henry Bernhardt , Michael Stadtmüller , Olaf Storbeck , Stefan Kainz
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L27/10861 , H01L21/3081 , H01L21/3144 , H01L21/3185 , H01L27/1087 , H01L29/66181
摘要： A stress relief layer between a single-crystal semiconductor substrate and a deposited silicon nitride layer or pad nitride is formed from thermally produced silicon nitride. The stress relief layer made from thermally produced silicon nitride replaces a silicon dioxide layer or pad oxide which is customary at this location for example in connection with mask layers. After patterning of a mask, which includes a protective layer portion formed from deposited silicon nitride, the material which is provided according to the invention for the stress relief layer reduces the restrictions imposed for subsequent process steps, such as for example wet-etching steps, acting both on the semiconductor substrate or structures in the semiconductor substrate and also on the stress relief layer. The thermal nitriding is advantageously incorporated into a preanneal step for expelling oxygen from the semiconductor substrate, so that the semiconductor substrate is protected from the etching action of the expelled oxygen by the stress relief layer which is formed, there is no need for an additional temporary etching protection layer for the semiconductor substrate and the overall processing is streamlined.
摘要翻译：单晶半导体衬底和沉积的氮化硅层或衬垫氮化物之间的应力消除层由热生产的氮化硅形成。由热产生的氮化硅制成的应力消除层代替例如与掩模层结合在该位置上通常的二氧化硅层或焊盘氧化物。在包括由沉积的氮化硅形成的保护层部分的掩模图案化之后，根据本发明为应力消除层提供的材料减少了对随后的工艺步骤施加的限制，例如湿蚀刻步骤，在半导体衬底或半导体衬底中的结构以及应力消除层上均起作用。热氮化有利地结合到用于从半导体衬底排出氧的预退火步骤中，使得半导体衬底被形成的应力消除层免受排出的氧的蚀刻作用，不需要额外的临时用于半导体衬底的蚀刻保护层和整体处理被简化。

8. 发明申请

US20060228876A1 Method of manufacturing a semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20060228876A1
公开(公告)日：2006-10-12
申请号：US11101639
申请日：2005-04-08
申请人： Olaf Storbeck , Jens Hahn , Sven Schmidbauer , Juergen Faul , Frank Jakubowski , Thomas Schuster
发明人： Olaf Storbeck , Jens Hahn , Sven Schmidbauer , Juergen Faul , Frank Jakubowski , Thomas Schuster
IPC分类号： H01L29/00
CPC分类号： H01L21/265 , H01L21/28044 , H01L21/324 , H01L29/4925
摘要： The invention relates to a method of manufacturing a semiconductor device, in which a substrate is provided, a dielectric layer is formed on top of the substrate, an amorphous semiconductor layer id deposited on top of the dielectric layer, the amorphous semiconductor layer is doped, and a high temperature step to the amorphous layer is applied to form a crystallized layer out of the amorphous semiconductor.
摘要翻译：本发明涉及一种制造半导体器件的方法，其中提供了一种衬底，在衬底的顶部形成介电层，淀积在电介质层顶部的非晶半导体层，掺杂非晶半导体层，并且施加到非晶层的高温步骤以从非晶半导体形成结晶层。

9. 发明申请

US20120152304A1 TABBING RIBBON, PHOTOVOLTAIC SOLAR PANEL, METHOD FOR MANUFACTURING A SOLAR CELL TABBING RIBBON, MACHINE FOR MANUFACTURING A SOLAR CELL TABBING RIBBON 有权
标题翻译：太阳能太阳能电池板，制造太阳能电池板的方法，用于制造太阳能电池板的机器RIBBON
公开(公告)号：US20120152304A1
公开(公告)日：2012-06-21
申请号：US13326364
申请日：2011-12-15
申请人： Olaf Storbeck , Harald Hahn
发明人： Olaf Storbeck , Harald Hahn
IPC分类号： H01L31/05 , B21D31/00 , B29D11/00 , B29C53/02 , B21D5/08 , H01B5/00
CPC分类号： H01L31/0508 , B21D13/04 , H01L31/0547 , Y02E10/52 , Y10T29/532
摘要： In various embodiments, a tabbing ribbon for connecting at least one solar cell is provided, wherein the tabbing ribbon at least partially extends in a non-planar manner and includes a non-planar section.
摘要翻译：在各种实施例中，提供用于连接至少一个太阳能电池的标签带，其中，所述带状带至少部分地以非平面方式延伸并且包括非平面部分。

10. 发明申请

US20110265844A1 PHOTOVOLTAIC MODULE, METHOD FOR ELECTRICALLY CONNECTING A PLURALITY OF PHOTOVOLTAIC CELLS, AND DEVICE FOR ELECTRICALLY CONNECTING A PLURALITY OF PHOTOVOLTAIC CELLS 有权
标题翻译：光电模块，用于电连接多个光伏电池的方法，以及用于电连接多个光伏电池的装置
公开(公告)号：US20110265844A1
公开(公告)日：2011-11-03
申请号：US13095930
申请日：2011-04-28
申请人： Olaf Storbeck , Martin Kutzer , Harald Hahn
发明人： Olaf Storbeck , Martin Kutzer , Harald Hahn
IPC分类号： H01L31/05 , H01L31/18
CPC分类号： H01L31/0504 , H02S10/10 , Y02E10/50 , Y10T29/5313
摘要： In various embodiments, a photovoltaic module may include: a plurality of photovoltaic cells, at least one photovoltaic cell of the number of photovoltaic cells comprising: a first plurality of contact wires on a front of the photovoltaic cell; and a second plurality of contact wires on a rear of the photovoltaic cell. The first plurality of contact wires and the second plurality of contact wires may be arranged offset with respect to one another.
摘要翻译：在各种实施例中，光伏模块可以包括：多个光伏电池，多个光伏电池的至少一个光伏电池，包括：在光伏电池的前面的第一多个接触导线; 以及在所述光伏电池的后部上的第二多个接触导线。第一多个接触线和第二多个接触线可以相对于彼此偏移地布置。

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