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1. 发明申请

US20110099798A1 FORMATION OF A LITHIUM COMPRISING STRUCTURE ON A SUBSTRATE BY ALD 有权
标题翻译：通过ALD在基底上形成包含结构的锂
公开(公告)号：US20110099798A1
公开(公告)日：2011-05-05
申请号：US12810897
申请日：2008-12-23
申请人： Ola Nilsen , Helmer Fjellvag , Mari Endresen Alnes , Titta Aaltonen , Matti Putkonen
发明人： Ola Nilsen , Helmer Fjellvag , Mari Endresen Alnes , Titta Aaltonen , Matti Putkonen
IPC分类号： H01M10/04 , B05D5/12 , C23C16/44 , C23C16/52
CPC分类号： H01M10/0562 , C23C16/40 , C23C16/409 , C23C16/45531 , C23C16/45553 , H01M6/185 , H01M6/188 , H01M6/40 , H01M2300/0068 , Y02E60/12 , Y10T29/49115
摘要： The present invention discloses a method for the formation of lithium comprising layer on a substrate using an atomic layer deposition method. The method comprises the sequential pulsing of a lithium precursor through a reaction chamber for deposition upon a substrate. Using further oxidising pulses and or other metal containing precursor pulses, an electrolyte suitable for use in thin film batteries may be manufactured.
摘要翻译：本发明公开了一种使用原子层沉积法在基板上形成含锂层的方法。该方法包括通过用于沉积在基底上的反应室的锂前体的顺序脉冲。使用另外的氧化脉冲和/或其它含有金属的前驱体脉冲，可以制造适用于薄膜电池的电解质。

2. 发明授权

US08894723B2 Formation of a lithium comprising structure on a substrate by ALD 有权
标题翻译：通过ALD在衬底上形成包含锂的结构
公开(公告)号：US08894723B2
公开(公告)日：2014-11-25
申请号：US12810897
申请日：2008-12-23
申请人： Ola Nilsen , Helmer Fjellvåg , Mari Endresen Alnes , Titta Aaltonen , Matti Putkonen
发明人： Ola Nilsen , Helmer Fjellvåg , Mari Endresen Alnes , Titta Aaltonen , Matti Putkonen
IPC分类号： C23C16/40 , H01M6/18 , C23C16/455 , H01M10/0562 , H01M6/40
CPC分类号： H01M10/0562 , C23C16/40 , C23C16/409 , C23C16/45531 , C23C16/45553 , H01M6/185 , H01M6/188 , H01M6/40 , H01M2300/0068 , Y02E60/12 , Y10T29/49115
摘要： A method for the formation of lithium includes a layer on a substrate using an atomic layer deposition method. The method includes the sequential pulsing of a lithium precursor through a reaction chamber for deposition upon a substrate. Using further oxidizing pulses and or other metal containing precursor pulses, an electrolyte suitable for use in thin film batteries may be manufactured.
摘要翻译：用于形成锂的方法包括使用原子层沉积方法在衬底上的层。该方法包括通过用于沉积在基底上的反应室的锂前体的顺序脉冲。使用另外的氧化脉冲和/或其它含金属前驱体脉冲，可以制造适用于薄膜电池的电解质。

3. 发明授权

US08124179B2 Thin films prepared with gas phase deposition technique 有权
标题翻译：用气相沉积技术制备薄膜
公开(公告)号：US08124179B2
公开(公告)日：2012-02-28
申请号：US11722937
申请日：2005-12-28
申请人： Ola Nilsen , Helmer Fjellvag
发明人： Ola Nilsen , Helmer Fjellvag
IPC分类号： C23C16/00 , B05D1/36
CPC分类号： C30B29/54 , B05D1/185 , B05D1/36 , B05D1/60 , B05D5/00 , B05D7/52 , B05D7/56 , C23C16/30 , C23C16/45525 , C23C16/45553 , C23C16/45555 , C30B25/02 , C30B29/10
摘要： A process for the preparation of thin films of an organic-inorganic nature comprising growing with a gas phase deposition technique preferable the ALCVD (atomic layer chemical vapour deposition) technique. As an example, trimethylaluminium (TMA), hydroquinone (Hq) and phloroglucinol (PhI) have been used as precursors to fabricate thin films of aluminium benzene oxides constructing a hybrid type film. Further thin films with a hybrid nature are described. These films can be used as an optical material, a pressure sensor, a gas sensor, temperature sensor, magnetic field sensor, electric field sensor, a piezoelectric material, a magnetic material, a semiconductor material and as an electric insulating material.
摘要翻译：一种制备有机 - 无机性质薄膜的方法，包括用气相沉积技术生长优选ALCVD（原子层化学气相沉积）技术。作为例子，已经使用三甲基铝（TMA），氢醌（Hq）和间苯三酚（PhI）作为构成混合型膜的铝苯氧化物的薄膜的前体。描述了具有混合性质的其它薄膜。这些膜可以用作光学材料，压力传感器，气体传感器，温度传感器，磁场传感器，电场传感器，压电材料，磁性材料，半导体材料和电绝缘材料。

4. 发明申请

US20090286674A1 ACTIVATION OF SURFACES THROUGH GAS PHASE REACTIONS 审中-公开
标题翻译：通过气相反应活化表面
公开(公告)号：US20090286674A1
公开(公告)日：2009-11-19
申请号：US12305565
申请日：2007-06-19
申请人： Helmer Fjellvag , Ola Nilsen
发明人： Helmer Fjellvag , Ola Nilsen
IPC分类号： B01J31/02 , C07C215/24 , C23C16/00 , C23C16/06
CPC分类号： B05D1/185 , B05D1/60 , B05D5/00 , B82Y30/00 , B82Y40/00
摘要： A process for the preparation of active surfaces terminated by a desired form of organic, organic-inorganic, or inorganic nature comprising growing with a gas phase deposition technique preferable the ALCVD (atomic layer chemical vapour deposition) technique. As an example, trimethylaluminium (TMA), hydroquinone (Hq) and phloroglucinol (Phl) have been used as precursors to fabricate surfaces that are terminated by hydroxyl groups attached to aromates. Further types of active surfaces are described. These surfaces can be used to produce surfaces: suitable for adhesion through the use of glue or other adhesive, providing receptors for biological molecules, making the surfaces biocompatible, of catalytically active materials, where upon subsequent types of chemical reactions can take place, with different degrees of wetting properties.
摘要翻译：制备以所需形式的有机，无机或无机性质终止的活性表面的方法，包括用气相沉积技术生长，优选ALCVD（原子层化学气相沉积）技术。作为实例，三甲基铝（TMA），氢醌（Hq）和间苯三酚（Phl）已被用作前体，以制造由连接到芳族化合物上的羟基封端的表面。描述其他类型的活性表面。这些表面可用于产生表面：适用于通过使用胶水或其他粘合剂的粘合剂，为生物分子提供受体，使表面生物相容的催化活性材料，其中随后可能发生的化学反应发生，具有不同的润湿性能。

5. 发明申请

US20080102313A1 Thin Films Prepared With Gas Phase Deposition Technique 有权
标题翻译：气相沉积技术制备薄膜
公开(公告)号：US20080102313A1
公开(公告)日：2008-05-01
申请号：US11722937
申请日：2005-12-28
申请人： Ola Nilsen , Helmer Fjellvag
发明人： Ola Nilsen , Helmer Fjellvag
IPC分类号： C23C16/06 , B32B9/04 , C07F5/06
CPC分类号： C30B29/54 , B05D1/185 , B05D1/36 , B05D1/60 , B05D5/00 , B05D7/52 , B05D7/56 , C23C16/30 , C23C16/45525 , C23C16/45553 , C23C16/45555 , C30B25/02 , C30B29/10
摘要： A process for the preparation of thin films of an organic-inorganic nature comprising growing with a gas phase deposition technique preferable the ALCVD (atomic layer chemical vapour deposition) technique. As an example, trimethylaluminium (TMA), hydroquinone (Hq) and phloroglucinol (PhI) have been used as precursors to fabricate thin films of aluminium benzene oxides constructing a hybrid type film. Further thin films with a hybrid nature are described. These films can be used as an optical material, a pressure sensor, a gas sensor, temperature sensor, magnetic field sensor, electric field sensor, a piezoelectric material, a magnetic material, a semiconductor material and as an electric insulating material.
摘要翻译：一种制备有机 - 无机性质薄膜的方法，包括用气相沉积技术生长优选ALCVD（原子层化学气相沉积）技术。作为例子，已经使用三甲基铝（TMA），氢醌（Hq）和间苯三酚（PhI）作为构成混合型膜的铝苯氧化物薄膜的前体。描述了具有混合性质的其它薄膜。这些膜可以用作光学材料，压力传感器，气体传感器，温度传感器，磁场传感器，电场传感器，压电材料，磁性材料，半导体材料和电绝缘材料。

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