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1. 发明授权

US06824816B2 Process for producing metal thin films by ALD 有权
标题翻译： ALD生产金属薄膜的工艺
公开(公告)号：US06824816B2
公开(公告)日：2004-11-30
申请号：US10066315
申请日：2002-01-29
申请人： Titta Aaltonen , Petra Alén , Mikko Ritala , Markku Leskelä
发明人： Titta Aaltonen , Petra Alén , Mikko Ritala , Markku Leskelä
IPC分类号： B05D512
CPC分类号： H01L21/7687 , B82Y25/00 , C23C16/18 , C23C16/45553 , G11B5/66 , G11B5/85 , H01F10/325 , H01L21/02183 , H01L21/02186 , H01L21/0228 , H01L21/28562 , H01L21/3162 , H01L28/60
摘要： The invention relates generally to processes for producing electrically conductive noble metal thin films on a substrate by atomic layer deposition. According to one embodiment of the invention a substrate with a surface is provided in a reaction chamber and a vaporised precursor of a noble metal is pulsed into the reaction chamber. By contacting the vaporised precursor with the surface of the substrate, no more than about a molecular layer of the metal precursor is formed on the substrate. In a next step, a pulse of molecular oxygen-containing gas is provided in the reaction chamber, where the oxygen reacts with the precursor on the substrate. Thus, high-quality metal thin films can be deposited by utilising reactions between the metal precursor and oxygen. In one embodiment, electrically conductive layers are deposited in structures that have high aspect ratio vias and trenches, local high elevation areas or other similar surface structures that make the surface rough.
摘要翻译：本发明一般涉及通过原子层沉积在衬底上制造导电贵金属薄膜的方法。根据本发明的一个实施方案，具有表面的基底设置在反应室中，并将贵金属的气化前体脉冲进入反应室。通过使蒸发的前体与基底的表面接触，在基底上不会形成不超过约金属前体的分子层。在下一步骤中，在反应室中提供含分子氧气体的脉冲，其中氧气与基板上的前体反应。因此，可以通过利用金属前体和氧之间的反应来沉积高质量的金属薄膜。在一个实施例中，在具有高纵横比通孔和沟槽，局部高仰角区域或使表面粗糙的其它类似表面结构的结构中沉积导电层。

2. 发明申请

US20050020060A1 Process for producing metal thin films by ALD 有权
标题翻译： ALD生产金属薄膜的工艺
公开(公告)号：US20050020060A1
公开(公告)日：2005-01-27
申请号：US10916257
申请日：2004-08-10
申请人： Titta Aaltonen , Petra Alen , Mikko Ritala , Markku Leskela
发明人： Titta Aaltonen , Petra Alen , Mikko Ritala , Markku Leskela
IPC分类号： C23C16/18 , C23C16/44 , C23C16/455 , G11B5/66 , G11B5/85 , H01F10/32 , H01L21/02 , H01L21/285 , H01L21/316 , H01L21/768 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108 , C23C16/00 , H01L21/4763 , H01L21/44
CPC分类号： H01L21/7687 , B82Y25/00 , C23C16/18 , C23C16/45553 , G11B5/66 , G11B5/85 , H01F10/325 , H01L21/02183 , H01L21/02186 , H01L21/0228 , H01L21/28562 , H01L21/3162 , H01L28/60
摘要： The invention relates generally to processes for producing electrically conductive noble metal thin films on a substrate by atomic layer deposition. According to one embodiment of the invention a substrate with a surface is provided in a reaction chamber and a vaporised precursor of a noble metal is pulsed into the reaction chamber. By contacting the vaporised precursor with the surface of the substrate, no more than about a molecular layer of the metal precursor is formed on the substrate. In a next step, a pulse of molecular oxygen-containing gas is provided in the reaction chamber, where the oxygen reacts with the precursor on the substrate. Thus, high-quality metal thin films can be deposited by utilising reactions between the metal precursor and oxygen. In one embodiment, electrically conductive layers are deposited in structures that have high aspect ratio vias and trenches, local high elevation areas or other similar surface structures that make the surface rough.
摘要翻译：本发明一般涉及通过原子层沉积在衬底上制造导电贵金属薄膜的方法。根据本发明的一个实施方案，具有表面的基底设置在反应室中，并将贵金属的气化前体脉冲进入反应室。通过使蒸发的前体与基底的表面接触，在基底上不会形成不超过约金属前体的分子层。在下一步骤中，在反应室中提供含分子氧的气体脉冲，其中氧气与基板上的前体反应。因此，可以通过利用金属前体和氧之间的反应来沉积高质量的金属薄膜。在一个实施例中，在具有高纵横比通孔和沟槽，局部高仰角区域或使表面粗糙的其它类似表面结构的结构中沉积导电层。

3. 发明授权

US08894723B2 Formation of a lithium comprising structure on a substrate by ALD 有权
标题翻译：通过ALD在衬底上形成包含锂的结构
公开(公告)号：US08894723B2
公开(公告)日：2014-11-25
申请号：US12810897
申请日：2008-12-23
申请人： Ola Nilsen , Helmer Fjellvåg , Mari Endresen Alnes , Titta Aaltonen , Matti Putkonen
发明人： Ola Nilsen , Helmer Fjellvåg , Mari Endresen Alnes , Titta Aaltonen , Matti Putkonen
IPC分类号： C23C16/40 , H01M6/18 , C23C16/455 , H01M10/0562 , H01M6/40
CPC分类号： H01M10/0562 , C23C16/40 , C23C16/409 , C23C16/45531 , C23C16/45553 , H01M6/185 , H01M6/188 , H01M6/40 , H01M2300/0068 , Y02E60/12 , Y10T29/49115
摘要： A method for the formation of lithium includes a layer on a substrate using an atomic layer deposition method. The method includes the sequential pulsing of a lithium precursor through a reaction chamber for deposition upon a substrate. Using further oxidizing pulses and or other metal containing precursor pulses, an electrolyte suitable for use in thin film batteries may be manufactured.
摘要翻译：用于形成锂的方法包括使用原子层沉积方法在衬底上的层。该方法包括通过用于沉积在基底上的反应室的锂前体的顺序脉冲。使用另外的氧化脉冲和/或其它含金属前驱体脉冲，可以制造适用于薄膜电池的电解质。

4. 发明申请

US20110099798A1 FORMATION OF A LITHIUM COMPRISING STRUCTURE ON A SUBSTRATE BY ALD 有权
标题翻译：通过ALD在基底上形成包含结构的锂
公开(公告)号：US20110099798A1
公开(公告)日：2011-05-05
申请号：US12810897
申请日：2008-12-23
申请人： Ola Nilsen , Helmer Fjellvag , Mari Endresen Alnes , Titta Aaltonen , Matti Putkonen
发明人： Ola Nilsen , Helmer Fjellvag , Mari Endresen Alnes , Titta Aaltonen , Matti Putkonen
IPC分类号： H01M10/04 , B05D5/12 , C23C16/44 , C23C16/52
CPC分类号： H01M10/0562 , C23C16/40 , C23C16/409 , C23C16/45531 , C23C16/45553 , H01M6/185 , H01M6/188 , H01M6/40 , H01M2300/0068 , Y02E60/12 , Y10T29/49115
摘要： The present invention discloses a method for the formation of lithium comprising layer on a substrate using an atomic layer deposition method. The method comprises the sequential pulsing of a lithium precursor through a reaction chamber for deposition upon a substrate. Using further oxidising pulses and or other metal containing precursor pulses, an electrolyte suitable for use in thin film batteries may be manufactured.
摘要翻译：本发明公开了一种使用原子层沉积法在基板上形成含锂层的方法。该方法包括通过用于沉积在基底上的反应室的锂前体的顺序脉冲。使用另外的氧化脉冲和/或其它含有金属的前驱体脉冲，可以制造适用于薄膜电池的电解质。

5. 发明授权

US07220451B2 Process for producing metal thin films by ALD 有权
标题翻译： ALD生产金属薄膜的工艺
公开(公告)号：US07220451B2
公开(公告)日：2007-05-22
申请号：US10916257
申请日：2004-08-10
申请人： Titta Aaltonen , Petra Alén , Mikko Ritala , Markku Leskelä
发明人： Titta Aaltonen , Petra Alén , Mikko Ritala , Markku Leskelä
IPC分类号： C23C16/40
CPC分类号： H01L21/7687 , B82Y25/00 , C23C16/18 , C23C16/45553 , G11B5/66 , G11B5/85 , H01F10/325 , H01L21/02183 , H01L21/02186 , H01L21/0228 , H01L21/28562 , H01L21/3162 , H01L28/60
摘要： Electrically conductive noble metal thin films can be deposited on a substrate by atomic layer deposition. According to one embodiment of the invention a substrate with a surface is provided in a reaction chamber and a vaporised precursor of a noble metal is pulsed into the reaction chamber. By contacting the vaporised precursor with the surface of the substrate, no more than about a molecular layer of the metal precursor is formed on the substrate. In a next step, a pulse of molecular oxygen-containing gas is provided in the reaction chamber, where the oxygen reacts with the precursor on the substrate. Thus, high-quality metal thin films can be deposited by utilising reactions between the metal precursor and oxygen. In one embodiment, electrically conductive layers are deposited in structures that have high aspect ratio vias and trenches, local high elevation areas or other similar surface structures that make the surface rough.
摘要翻译：导电性贵金属薄膜可通过原子层沉积沉积在衬底上。根据本发明的一个实施方案，具有表面的基底设置在反应室中，并将贵金属的气化前体脉冲进入反应室。通过使蒸发的前体与基底的表面接触，在基底上不会形成不超过约金属前体的分子层。在下一步骤中，在反应室中提供含分子氧的气体脉冲，其中氧气与基板上的前体反应。因此，可以通过利用金属前体和氧之间的反应来沉积高质量的金属薄膜。在一个实施例中，在具有高纵横比通孔和沟槽，局部高仰角区域或使表面粗糙的其它类似表面结构的结构中沉积导电层。

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