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1. 发明授权

US08337618B2 Silicon crystallization system and silicon crystallization method using laser 有权
标题翻译：硅结晶体系和硅结晶法使用激光
公开(公告)号：US08337618B2
公开(公告)日：2012-12-25
申请号：US12911937
申请日：2010-10-26
申请人： Oh-Seob Kwon , Sang-Jo Lee , Hong-Ro Lee , Je-Kil Ryu
发明人： Oh-Seob Kwon , Sang-Jo Lee , Hong-Ro Lee , Je-Kil Ryu
IPC分类号： C30B28/12
CPC分类号： H01L21/268 , B23K26/0622 , B23K26/0738 , B23K26/082 , H01L21/02532 , H01L21/02675 , H01L21/02691 , Y10T117/10
摘要： A silicon crystallization system includes a vibration device for vibrating a linear laser beam along a longer-axis direction of the linear laser beam. A vibration frequency at which the laser beam is vibrated is periodically generated and randomly changes within a predetermined range.
摘要翻译：硅结晶系统包括用于沿着线性激光束的长轴方向振动线性激光束的振动装置。周期性地产生激光束振动的振动频率，并且在预定范围内随机变化。

2. 发明申请

US20110097906A1 SILICON CRYSTALLIZATION SYSTEM AND SILICON CRYSTALLIZATION METHOD USING LASER 有权
标题翻译：硅晶体结构和使用激光的硅结晶方法
公开(公告)号：US20110097906A1
公开(公告)日：2011-04-28
申请号：US12911937
申请日：2010-10-26
申请人： Oh-Seob KWON , Sang-Jo Lee , Hong-Ro Lee , Je-Kil Ryu
发明人： Oh-Seob KWON , Sang-Jo Lee , Hong-Ro Lee , Je-Kil Ryu
IPC分类号： H01L21/26 , G21G5/00
CPC分类号： H01L21/268 , B23K26/0622 , B23K26/0738 , B23K26/082 , H01L21/02532 , H01L21/02675 , H01L21/02691 , Y10T117/10
摘要： A silicon crystallization system includes a vibration device for vibrating a linear laser beam along a longer-axis direction of the linear laser beam. A vibration frequency at which the laser beam is vibrated is periodically generated and randomly changes within a predetermined range.
摘要翻译：硅结晶系统包括用于沿着线性激光束的长轴方向振动线性激光束的振动装置。周期性地产生激光束振动的振动频率，并且在预定范围内随机变化。

3. 发明授权

US08502809B2 Organic light emitting diode display device and method of fabricating the same 有权
标题翻译：有机发光二极管显示装置及其制造方法
公开(公告)号：US08502809B2
公开(公告)日：2013-08-06
申请号：US12710159
申请日：2010-02-22
申请人： Hong-Ro Lee , Sang-Jo Lee
发明人： Hong-Ro Lee , Sang-Jo Lee
IPC分类号： G06F3/038 , G09G5/00 , G09G3/36
CPC分类号： H01L27/1222 , H01L27/1214 , H01L27/1251 , H01L27/1255 , H01L27/1285 , H01L27/1296 , H01L27/3262 , H01L51/5012 , H01L51/56
摘要： An organic light emitting diode (OLED) display device and a method of fabricating the same is provided. Semiconductor layers of driving transistors located in two adjacent pixels included in the OLED display device may extend in different lengthwise directions. Thus, striped stains of the OLED display device can be improved.
摘要翻译：提供了一种有机发光二极管（OLED）显示装置及其制造方法。位于OLED显示装置中的两个相邻像素中的驱动晶体管的半导体层可以在不同的长度方向上延伸。因此，可以提高OLED显示装置的条纹染色。

4. 发明申请

US20130316474A1 ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：有机发光二极管显示装置及其制造方法
公开(公告)号：US20130316474A1
公开(公告)日：2013-11-28
申请号：US13959528
申请日：2013-08-05
申请人： Hong-Ro Lee , Sang-Jo Lee
发明人： Hong-Ro Lee , Sang-Jo Lee
IPC分类号： H01L27/32
CPC分类号： H01L27/1222 , H01L27/1214 , H01L27/1251 , H01L27/1255 , H01L27/1285 , H01L27/1296 , H01L27/3262 , H01L51/5012 , H01L51/56
摘要： An organic light emitting diode (OLED) display device and a method of fabricating the same is provided. Semiconductor layers of driving transistors located in two adjacent pixels included in the OLED display device may extend in different lengthwise directions. Thus, striped stains of the OLED display device can be improved.
摘要翻译：提供了一种有机发光二极管（OLED）显示装置及其制造方法。位于OLED显示装置中的两个相邻像素中的驱动晶体管的半导体层可以在不同的长度方向上延伸。因此，可以提高OLED显示装置的条纹染色。

5. 发明授权

US08673674B2 Organic light emitting diode display device and method of fabricating the same 有权
标题翻译：有机发光二极管显示装置及其制造方法
公开(公告)号：US08673674B2
公开(公告)日：2014-03-18
申请号：US13959528
申请日：2013-08-05
申请人： Hong-Ro Lee , Sang-Jo Lee
发明人： Hong-Ro Lee , Sang-Jo Lee
IPC分类号： H01L27/32 , H01L51/56 , H01L27/12 , H01L51/50
CPC分类号： H01L27/1222 , H01L27/1214 , H01L27/1251 , H01L27/1255 , H01L27/1285 , H01L27/1296 , H01L27/3262 , H01L51/5012 , H01L51/56
摘要： An organic light emitting diode (OLED) display device and a method of fabricating the same is provided. Semiconductor layers of driving transistors located in two adjacent pixels included in the OLED display device may extend in different lengthwise directions. Thus, striped stains of the OLED display device can be improved.
摘要翻译：提供了一种有机发光二极管（OLED）显示装置及其制造方法。位于OLED显示装置中的两个相邻像素中的驱动晶体管的半导体层可以在不同的长度方向上延伸。因此，可以提高OLED显示装置的条纹染色。

6. 发明申请

US20110090191A1 ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：有机发光二极管显示装置及其制造方法
公开(公告)号：US20110090191A1
公开(公告)日：2011-04-21
申请号：US12710159
申请日：2010-02-22
申请人： Hong-Ro Lee , Sang-Jo Lee
发明人： Hong-Ro Lee , Sang-Jo Lee
IPC分类号： G06F3/038 , H01J9/00
CPC分类号： H01L27/1222 , H01L27/1214 , H01L27/1251 , H01L27/1255 , H01L27/1285 , H01L27/1296 , H01L27/3262 , H01L51/5012 , H01L51/56
摘要： An organic light emitting diode (OLED) display device and a method of fabricating the same is provided. Semiconductor layers of driving transistors located in two adjacent pixels included in the OLED display device may extend in different lengthwise directions. Thus, striped stains of the OLED display device can be improved.
摘要翻译：提供了一种有机发光二极管（OLED）显示装置及其制造方法。位于OLED显示装置中的两个相邻像素中的驱动晶体管的半导体层可以在不同的长度方向上延伸。因此，可以提高OLED显示装置的条纹染色。

7. 发明授权

US08097883B2 Thin film transistors in pixel and driver portions characterized by surface roughness 有权
标题翻译：具有表面粗糙度的像素和驱动器部分的薄膜晶体管
公开(公告)号：US08097883B2
公开(公告)日：2012-01-17
申请号：US11954716
申请日：2007-12-12
申请人： Hong-Ro Lee
发明人： Hong-Ro Lee
IPC分类号： H01L29/04 , H01L29/786 , H01L27/12
CPC分类号： H01L27/12 , H01L27/1214 , H01L27/1285 , H01L29/04
摘要： A thin film transistor and a fabrication method thereof, in which one excimer laser annealing (ELA) makes a pixel portion and a driver portion different from each other in surface roughness and grain size. The thin film transistor includes: a substrate including a pixel portion and a driver portion; a first semiconductor layer disposed in the pixel portion and having a first surface roughness; a second semiconductor layer disposed in the driver portion and having a second surface roughness smaller than the first surface roughness; a gate insulating layer formed on the substrate including the first and second semiconductor layers; a first gate electrode placed to correspond to the first semiconductor layer on the gate insulating layer; a second gate electrode placed to correspond to the second semiconductor layer on the gate insulating layer; an interlayer insulating layer formed on the substrate including the first and second gate electrodes; first source and drain electrodes formed on the interlayer insulating layer and electrically connected with the first semiconductor layer; and second source and drain electrodes formed on the interlayer insulating layer and electrically connected with the second semiconductor layer.
摘要翻译：一种薄膜晶体管及其制造方法，其中一个准分子激光退火（ELA）使得像素部分和驱动器部分在表面粗糙度和晶粒尺寸上彼此不同。薄膜晶体管包括：包括像素部分和驱动器部分的基板; 第一半导体层，设置在像素部分中并具有第一表面粗糙度; 第二半导体层，设置在所述驱动器部分中，具有小于所述第一表面粗糙度的第二表面粗糙度; 形成在包括所述第一半导体层和所述第二半导体层的所述基板上的栅极绝缘层; 第一栅极电极，被放置成对应于栅极绝缘层上的第一半导体层; 第二栅极电极，被放置为对应于栅极绝缘层上的第二半导体层; 在包括所述第一和第二栅电极的所述基板上形成的层间绝缘层; 形成在所述层间绝缘层上并与所述第一半导体层电连接的第一源极和漏极; 以及第二源极和漏极，形成在层间绝缘层上并与第二半导体层电连接。

8. 发明申请

US20080121891A1 Method of measuring degree of crystallinity of polycrystalline silicon substrate, method of fabricating organic light emitting display using the same, and organic light emitting display fabricated using the same 有权
标题翻译：多晶硅基板的结晶度测定方法，使用其制造有机发光显示器的方法以及使用其制造的有机发光显示器
公开(公告)号：US20080121891A1
公开(公告)日：2008-05-29
申请号：US11593090
申请日：2006-11-06
申请人： Hong-Ro Lee
发明人： Hong-Ro Lee
IPC分类号： G01J3/44 , H01L29/04 , H01L21/66
CPC分类号： G01N21/65
摘要： A method of measuring a degree of crystallinity of a polycrystalline silicon substrate includes obtaining a Raman spectrum graph by irradiating a polycrystalline silicon substrate with a laser beam; and calculating a degree of crystallinity of the polycrystalline silicon substrate from the Raman spectrum graph using the following formula: (degree of crystallinity)=(area of polycrystalline peak)/[(area of amorphous peak)+(area of polycrystalline peak)].
摘要翻译：测量多晶硅衬底的结晶度的方法包括通过用激光束照射多晶硅衬底来获得拉曼光谱图; 并使用下式计算多晶硅衬底的结晶度：（结晶度）=（多晶峰面积）/ [（无定形峰面积）+（多晶峰面积）]。

9. 发明申请

US20050242353A1 Method of manufacturing thin film transistor having polycrystalline silicon layer, thin film transistor manufactured using the method and flat panel display comprising the thin film transistor 有权
标题翻译：制造具有多晶硅层的薄膜晶体管的方法，使用该方法制造的薄膜晶体管和包括薄膜晶体管的平板显示器
公开(公告)号：US20050242353A1
公开(公告)日：2005-11-03
申请号：US11116276
申请日：2005-04-28
申请人： Keun-Ho Jang , Hyun-Gue Kim , Hong-Ro Lee
发明人： Keun-Ho Jang , Hyun-Gue Kim , Hong-Ro Lee
IPC分类号： H01L21/20 , H01L21/336 , H01L21/84 , H01L29/786
CPC分类号： H01L29/66757
摘要： A method for manufacturing a thin film transistor having a more uniform threshold voltage, and a flat panel display device that includes the thin film transistor. The method includes forming an amorphous silicon film on a substrate, removing a silicon oxide layer from a surface of the amorphous silicon film, forming a silicon oxide layer on the surface of the amorphous silicon film, and forming a polycrystalline Si layer by crystallizing the amorphous silicon film.
摘要翻译：一种具有更均匀阈值电压的薄膜晶体管的制造方法以及包括该薄膜晶体管的平板显示装置。该方法包括在衬底上形成非晶硅膜，从非晶硅膜的表面去除氧化硅层，在非晶硅膜的表面上形成氧化硅层，并通过使非晶硅层的结晶化形成多晶Si层硅膜。

10. 发明授权

US08466015B2 Thin film transistors in pixel and driving portions characterized by surface roughness 失效
标题翻译：像素中的薄膜晶体管和表面粗糙度特征的驱动部分
公开(公告)号：US08466015B2
公开(公告)日：2013-06-18
申请号：US13329191
申请日：2011-12-16
申请人： Hong-Ro Lee
发明人： Hong-Ro Lee
IPC分类号： H01L21/84 , H01L27/12 , H01L29/04
CPC分类号： H01L27/12 , H01L27/1214 , H01L27/1285 , H01L29/04
摘要： A thin film transistor and a fabrication method thereof, in which one excimer laser annealing (ELA) makes a pixel portion and a driver portion different from each other in surface roughness and grain size. The thin film transistor includes: a substrate including a pixel portion and a driver portion; a first semiconductor layer disposed in the pixel portion and having a first surface roughness; and a second semiconductor layer disposed in the driver portion and having a second surface roughness smaller than the first surface roughness.
摘要翻译：一种薄膜晶体管及其制造方法，其中一个准分子激光退火（ELA）使得像素部分和驱动器部分在表面粗糙度和晶粒尺寸上彼此不同。薄膜晶体管包括：包括像素部分和驱动器部分的基板; 第一半导体层，设置在像素部分中并具有第一表面粗糙度; 以及设置在所述驱动器部分中并且具有小于所述第一表面粗糙度的第二表面粗糙度的第二半导体层。

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