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1. 发明申请

US20160204388A1 METHOD OF PRODUCING AN OPTOELECTRONIC DEVICE AND OPTOELECTRONIC DEVICE 有权
标题翻译：制造光电器件和光电器件的方法
公开(公告)号：US20160204388A1
公开(公告)日：2016-07-14
申请号：US14914062
申请日：2014-08-27
申请人： OSRAM OLED GMBH
发明人： Stefan Höfle , Alexander Colsmann , Manuel Reinhard , Uli Lemmer
IPC分类号： H01L51/52 , H01L51/00
CPC分类号： H01L51/5278 , H01L51/0028 , H01L51/5206 , H01L51/5221 , H01L2251/303
摘要： A method of producing an optoelectronic device includes A) providing a substrate, B) applying a first electrode to the substrate, C) applying a first organic layer stack to the first electrode, D) producing a charge-generating layer stack on the first organic layer stack, E) applying a second organic layer stack to the charge-generating layer stack, and F) applying a second electrode to the second organic layer stack, wherein step D) includes D1) applying a solution of a first metal oxide precursor to the first organic layer stack, D2) generating a first charge-generating layer comprising a first metal oxide, D3) applying a solution of a second metal oxide precursor to the first charge-generating layer, and D4) generating a second charge-generating layer comprising a second metal oxide.
摘要翻译：一种制造光电子器件的方法包括：A）提供衬底，B）将第一电极施加到衬底; C）将第一有机层堆叠施加到第一电极，D）在第一有机层上产生电荷产生层堆叠 E）将第二有机层堆叠施加到电荷产生层堆叠，以及F）将第二电极施加到第二有机层堆叠，其中步骤D）包括D1）将第一金属氧化物前体的溶液施加到所述第一有机层叠层D2）产生包含第一金属氧化物的第一电荷产生层，D3）将第二金属氧化物前体的溶液施加到所述第一电荷产生层，以及D4）产生第二电荷产生层包括第二金属氧化物。

2. 发明授权

US09960390B2 Method of producing an optoelectronic device and optoelectronic device 有权
公开(公告)号：US09960390B2
公开(公告)日：2018-05-01
申请号：US14914062
申请日：2014-08-27
申请人： OSRAM OLED GmbH
发明人： Stefan Höfle , Alexander Colsmann , Manuel Reinhard , Uli Lemmer
IPC分类号： H01L51/56 , H01L51/52 , H01L51/00
CPC分类号： H01L51/5278 , H01L51/0028 , H01L51/5206 , H01L51/5221 , H01L2251/303
摘要： A method of producing an optoelectronic device includes A) providing a substrate, B) applying a first electrode to the substrate, C) applying a first organic layer stack to the first electrode, D) producing a charge-generating layer stack on the first organic layer stack, E) applying a second organic layer stack to the charge-generating layer stack, and F) applying a second electrode to the second organic layer stack, wherein step D) includes D1) applying a solution of a first metal oxide precursor to the first organic layer stack, D2) generating a first charge-generating layer comprising a first metal oxide, D3) applying a solution of a second metal oxide precursor to the first charge-generating layer, and D4) generating a second charge-generating layer comprising a second metal oxide.

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