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    • 6. 发明授权
    • Active LED module with LED and transistor formed on same substrate
    • 有源LED模块与LED和晶体管形成在同一基板上
    • US09577007B2
    • 2017-02-21
    • US14868082
    • 2015-09-28
    • Nthdegree Technologies Worldwide Inc.
    • Richard Austin BlanchardBradley Steven Oraw
    • H01L27/15H01L33/32
    • H01L27/153H01L27/15H01L33/32
    • An LED module is disclosed containing an integrated driver transistor (e.g, a MOSFET) in series with an LED. In one embodiment, LED layers are grown over a substrate. The transistor regions are formed over the same substrate. After the LED layers, such as GaN layers, are grown to form the LED portion, a central area of the LED is etched away to expose a semiconductor surface in which the transistor regions are formed. A conductor connects the transistor in series with the LED. Another node of the transistor is electrically coupled to an electrode on the bottom surface of the substrate. In one embodiment, an anode of the LED is connected to one terminal of the module, one current carrying node of the transistor is connected to a second terminal of the module, and the control terminal of the transistor is connected to a third terminal of the module.
    • 公开了一种LED模块,其包含与LED串联的集成驱动晶体管(例如,MOSFET)。 在一个实施例中,LED层在衬底上生长。 晶体管区域形成在相同的衬底上。 在诸如GaN层的LED层被生长以形成LED部分之后,将LED的中心区域蚀刻掉以暴露其中形成晶体管区域的半导体表面。 导体将晶体管与LED串联连接。 晶体管的另一个节点电耦合到衬底的底表面上的电极。 在一个实施例中,LED的阳极连接到模块的一个端子,晶体管的一个馈电节点连接到模块的第二端子,并且晶体管的控制端子连接到模块的第三端子 模块。