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1. 发明申请

US20150315720A1 ELECTROLYTE CONCENTRATION CONTROL SYSTEM FOR HIGH RATE ELECTROPLATING 审中-公开
标题翻译：用于高速电镀的电解质浓度控制系统
公开(公告)号：US20150315720A1
公开(公告)日：2015-11-05
申请号：US14800344
申请日：2015-07-15
申请人： Novellus Systems, Inc.
发明人： Steven T. Mayer , Jonathan David Reid , Seshasayee Varadarajan
IPC分类号： C25D21/18 , C25D7/12 , C25D5/02
CPC分类号： C25D21/18 , C25D3/38 , C25D7/123
摘要： An electroplating apparatus for filling recessed features on a semiconductor substrate includes a vessel configured to maintain a concentrated electroplating solution at a temperature of at least about 40° C., wherein the solution would have formed a precipitate at 20° C. This vessel is in fluidic communication with an electroplating cell configured for bringing the concentrated electrolyte in contact with the semiconductor substrate at a temperature of at least about 40° C., or the vessel is the electroplating cell. In order to prevent precipitation of metal salts from the electrolyte, the apparatus further includes a controller having program instructions for adding a diluent to the concentrated electroplating solution in the vessel to avoid precipitation of a salt from the concentrated electroplating solution in response to a signal indicating that the electrolyte is at risk of precipitation.
摘要翻译：用于在半导体衬底上填充凹陷特征的电镀设备包括构造成将浓缩电镀溶液保持在至少约40℃的温度的容器，其中该溶液将在20℃形成沉淀。该容器处于与电镀单元流体连通，其被配置为使浓缩电解质在至少约40℃的温度下与半导体衬底接触，或者容器是电镀单元。为了防止金属盐从电解质沉淀，该装置还包括具有程序指令的控制器，该程序指令用于向容器中的浓缩电镀溶液添加稀释剂，以避免盐从浓缩电镀溶液中沉淀出来，电解液有降水的危险。

2. 发明授权

US09309604B2 Method and apparatus for electroplating 有权
公开(公告)号：US09309604B2
公开(公告)日：2016-04-12
申请号：US13907265
申请日：2013-05-31
申请人： Novellus Systems, Inc.
发明人： Steven Mayer , Jingbin Feng , Zhian He , Jonathan Reid , Seshasayee Varadarajan
IPC分类号： C25D5/02 , C25D17/12 , C23C18/16 , C25D21/12 , C25D17/00 , C25F3/30 , H01L21/288 , H01L21/321 , H01L21/67 , H01L21/768 , C25D21/14
CPC分类号： C25D17/12 , C23C18/1601 , C25D5/02 , C25D17/001 , C25D17/002 , C25D17/007 , C25D17/008 , C25D21/12 , C25D21/14 , C25F3/30 , H01L21/2885 , H01L21/32115 , H01L21/32125 , H01L21/6715 , H01L21/76873
摘要： An apparatus for electroplating a layer of metal onto the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer and an auxiliary cathode located between the anode and the ionically resistive ionically permeable element. The ionically resistive ionically permeable element serves to modulate ionic current at the wafer surface. The auxiliary cathode is configured to shape the current distribution from the anode. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.

3. 发明授权

US10472730B2 Electrolyte concentration control system for high rate electroplating 有权
公开(公告)号：US10472730B2
公开(公告)日：2019-11-12
申请号：US14800344
申请日：2015-07-15
申请人： Novellus Systems, Inc.
发明人： Steven T. Mayer , Jonathan David Reid , Seshasayee Varadarajan
IPC分类号： C25D21/18 , C25D7/12 , C25D3/38
摘要： An electroplating apparatus for filling recessed features on a semiconductor substrate includes a vessel configured to maintain a concentrated electroplating solution at a temperature of at least about 40° C., wherein the solution would have formed a precipitate at 20° C. This vessel is in fluidic communication with an electroplating cell configured for bringing the concentrated electrolyte in contact with the semiconductor substrate at a temperature of at least about 40° C., or the vessel is the electroplating cell. In order to prevent precipitation of metal salts from the electrolyte, the apparatus further includes a controller having program instructions for adding a diluent to the concentrated electroplating solution in the vessel to avoid precipitation of a salt from the concentrated electroplating solution in response to a signal indicating that the electrolyte is at risk of precipitation.

4. 发明申请

US20130327650A1 METHOD AND APPARATUS FOR ELECTROPLATING 审中-公开
标题翻译：电镀方法和装置
公开(公告)号：US20130327650A1
公开(公告)日：2013-12-12
申请号：US13907265
申请日：2013-05-31
申请人： Novellus Systems, Inc.
发明人： Steven Mayer , Jingbin Feng , Zhian He , Jonathan Reid , Seshasayee Varadarajan
IPC分类号： C25D17/12 , C25D21/12
CPC分类号： C25D17/12 , C23C18/1601 , C25D5/02 , C25D17/001 , C25D17/002 , C25D17/007 , C25D17/008 , C25D21/12 , C25D21/14 , C25F3/30 , H01L21/2885 , H01L21/32115 , H01L21/32125 , H01L21/6715 , H01L21/76873
摘要： An apparatus for electroplating a layer of metal onto the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer and an auxiliary cathode located between the anode and the ionically resistive ionically permeable element. The ionically resistive ionically permeable element serves to modulate ionic current at the wafer surface. The auxiliary cathode is configured to shape the current distribution from the anode. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.
摘要翻译：用于将金属层电镀到晶片表面上的装置包括位于晶片附近的离子电离离子可渗透元件和位于阳极和离子电离性可离子渗透元件之间的辅助阴极。离子电阻性离子渗透元件用于调节晶片表面处的离子电流。辅助阴极被配置成使来自阳极的电流分布成形。所提供的配置有效地重新分布电镀系统中的离子电流，允许电镀均匀的金属层并减轻终端效应。

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