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1. 发明申请

US20220278059A1 CHANNELIZED FILTER USING SEMICONDUCTOR FABRICATION 有权
公开(公告)号：US20220278059A1
公开(公告)日：2022-09-01
申请号：US17745265
申请日：2022-05-16
申请人： Northrop Grumman Systems Corporation
发明人： Dah-Weih Duan , Elizabeth T. Kunkee , Stephane Larouche
IPC分类号： H01L23/66 , H01P1/203
摘要： A semiconductor technology implemented high-frequency channelized filter includes a dielectric substrate with metal traces disposed on one of two major surfaces of the substrate. An input and output port disposed on the substrate and one of the metal traces carrying a high-frequency signal to be filtered between the input and output port. Other of the metal traces are connected to the one metal trace at intervals along the length of the one metal trace each providing a reactance to the high-frequency signal where the reactance varies with frequency and additional traces of the metal traces serving as a reference ground for the one metal trace and the other metal traces. A silicon enclosure mounted to the substrate with a first planar surface with cavities in the enclosure that extend through the first surface, and internal walls within the silicon enclosure defining the cavities. A layer of conductive metal covers the first planar surface, cavities and the internal walls. The silicon enclosure having substantially continuous areas of metal on the first planar surface about the periphery of the silicon enclosure that engage corresponding areas of the additional traces about the periphery of the substrate. The cavities surround the respective other metal traces with the internal cavity walls engaging the additional traces adjacent the respective other metal traces to individually surround each of the other metal traces with a conductive metal thereby providing electromagnetic field isolation between each of the other metal traces.

2. 发明申请

US20220289559A1 MICROELECTRONICS H-FRAME DEVICE 有权
公开(公告)号：US20220289559A1
公开(公告)日：2022-09-15
申请号：US17198700
申请日：2021-03-11
申请人： Northrop Grumman Systems Corporation
发明人： Dah-Weih Duan , Elizabeth T. Kunkee , Martin E. Roden , Laura M. Woo
IPC分类号： B81B7/00 , B81C3/00
摘要： A microelectronics H-frame device includes: a stack of two or more substrates wherein the substrate stack comprises a top substrate and a bottom substrate, wherein bonding of the top substrate to the bottom substrate creates a vertical electrical connection between the top substrate and the bottom substrate, wherein the top surface of the top substrate comprises top substrate top metallization, wherein the bottom surface of the bottom substrate comprises bottom substrate bottom metallization; mid-substrate metallization located between the top substrate and the bottom substrate; a micro-machined top cover bonded to a top side of the substrate stack; and a micro-machined bottom cover bonded to a bottom side of the substrate stack.

3. 发明授权

US09865992B2 Method for mode control in multimode semiconductor waveguide lasers 有权
公开(公告)号：US09865992B2
公开(公告)日：2018-01-09
申请号：US15458375
申请日：2017-03-14
申请人： Northrop Grumman Systems Corporation
发明人： Robert R. Rice , Elizabeth T. Kunkee
IPC分类号： H01L21/00 , H01S5/22 , H01S5/028 , H01S5/065 , H01S5/20 , H01L21/768 , H01L21/265 , H01L45/00 , H01L51/10 , H01L21/425
CPC分类号： H01S5/22 , H01L21/265 , H01L21/425 , H01L21/76825 , H01L45/165 , H01L51/105 , H01S5/02469 , H01S5/0287 , H01S5/0425 , H01S5/0655 , H01S5/1014 , H01S5/1053 , H01S5/1064 , H01S5/2036 , H01S2301/166
摘要： One embodiment is a wide stripe semiconductor waveguide, which is cleaved at a Talbot length thereof, the wide stripe semiconductor waveguide having facets with mirror coatings. A system provides for selective pumping the wide stripe semiconductor waveguide to create and support a Talbot mode. In embodiments according to the present method and apparatus the gain is patterned so that a single unique pattern actually has the highest gain and hence it is the distribution that oscillates.

4. 发明申请

US20160254649A1 METHOD FOR MODE CONTROL IN MULTIMODE SEMICONDUCTOR WAVEGUIDE LASERS 审中-公开
标题翻译：多模半导体波导激光器模式控制方法
公开(公告)号：US20160254649A1
公开(公告)日：2016-09-01
申请号：US15151538
申请日：2016-05-11
申请人： Northrop Grumman Systems Corporation
发明人： Robert R. Rice , Elizabeth T. Kunkee
IPC分类号： H01S5/22 , H01S5/024 , H01S5/028
CPC分类号： H01S5/22 , H01L21/265 , H01L21/425 , H01L21/76825 , H01L45/165 , H01L51/105 , H01S5/02469 , H01S5/0287 , H01S5/0425 , H01S5/0655 , H01S5/1014 , H01S5/1053 , H01S5/1064 , H01S5/2036 , H01S2301/166
摘要： One embodiment is a wide stripe semiconductor waveguide, which is cleaved at a Talbot length thereof, the wide stripe semiconductor waveguide having facets with mirror coatings. A system provides for selective pumping the wide stripe semiconductor waveguide to create and support a Talbot mode. In embodiments according to the present method and apparatus the gain is patterned so that a single unique pattern actually has the highest gain and hence it is the distribution that oscillates.
摘要翻译：一个实施例是宽条形半导体波导，其在其Talbot长度处被切割，宽条形半导体波导具有具有镜面涂层的刻面。系统提供选择性地泵送宽条形半导体波导以创建和支持Talbot模式。在根据本方法和装置的实施例中，增益被图案化，使得单个唯一图案实际上具有最高增益，因此是振荡的分布。

5. 发明申请

US20220408526A1 RF CIRCUIT AND ENCLOSURE HAVING A MICROMACHINED INTERIOR USING SEMICONDUCTOR FABRICATION 有权
公开(公告)号：US20220408526A1
公开(公告)日：2022-12-22
申请号：US17896425
申请日：2022-08-26
申请人： Northrop Grumman Systems Corporation
发明人： Elizabeth T. Kunkee , Dah-Weih Duan , Dino Ferizovic , Chunbo Zhang , Greta S. Tsai , Ming-Jong Shiau , Daniel R. Scherrer , Martin E. Roden
IPC分类号： H05B6/68 , H05B6/80
摘要： An exemplary semiconductor technology implemented microwave filter includes a dielectric substrate with metal traces on one surface that function as frequency selective circuits and reference ground. A top enclosure encloses the substrate have respective interior recesses with deposited continuous metal coatings. A plurality of metal bonding bumps or bonding wall extends outwardly from the projecting walls of the bottom and top enclosures. The bonding bumps on the top enclosure engage reference ground metal traces on respective surface of the substrate. As a result of applied pressure, the bonding bumps and respective reference ground metal traces together with the through-substrate vias form a metal-to-metal singly-connected ground reference structure for the entire circuitry.

6. 发明授权

US09837738B2 Resilient miniature mechanical support that can also serve as an electrical connector 有权
公开(公告)号：US09837738B2
公开(公告)日：2017-12-05
申请号：US15648593
申请日：2017-07-13
申请人： Northrop Grumman Systems Corporation
发明人： Charles M. Jackson , Elizabeth T. Kunkee
IPC分类号： H01R12/00 , H01R12/71 , H01R12/91 , H01R12/70 , B33Y80/00 , B33Y10/00
CPC分类号： H01R12/714 , B33Y10/00 , B33Y80/00 , H01L21/4853 , H01L23/49811 , H01R12/52 , H01R12/7005 , H01R12/91 , H01R13/2428 , H05K1/144 , H05K3/4007 , H05K2201/042 , H05K2201/09754
摘要： An exemplary miniature support has upper and lower spaced-apart engagement surfaces each having at least a portion that are parallel to each other. Two supports each with an end supporting the upper engagement surface and another end supporting the lower engagement surface. The two supports have a spring-like property so that the upper and lower engagement surfaces can repeatedly move between an uncompressed state when not engaged to provide an interconnection and a compressed state when engaged between two opposing boards to provide an interconnection between the boards. The connector is preferably made using 3-D printing and may be integrally made as part of a board also made using the same 3-D printing. The support may have upper and lower engagement surfaces and at least one of the at least two supports that are conductive to establish connectivity between the upper and lower engagement surfaces.

7. 发明授权

US09761547B1 Crystalline tile 有权
公开(公告)号：US09761547B1
公开(公告)日：2017-09-12
申请号：US15295357
申请日：2016-10-17
申请人： Northrop Grumman Systems Corporation
发明人： Elizabeth T. Kunkee , Charles M. Jackson , Dah-Weih Duan
IPC分类号： H01L23/02 , H01L23/66 , H01L23/498 , H01L21/48 , H01L21/78 , H01P5/12 , H01P3/08 , H01P1/203 , H03H7/42
CPC分类号： H01L23/66 , H01L21/4853 , H01L21/486 , H01L21/78 , H01L23/49827 , H01L23/49833 , H01L2223/6611 , H01L2223/6627 , H01L2223/6677 , H01L2223/6683 , H01L2224/16225 , H01P1/2013 , H01P1/203 , H01P3/08 , H01P3/088 , H01P5/12 , H03H7/42
摘要： A system and method for vertically integrating heterogeneous devices into a 3D tile architecture are disclosed. The system uses high precision microelectronics fabrication techniques and known-good-die to achieve high yield to integrate devices to process radio frequency signals at microwave frequencies of approximately 300 MHz to 300 GHz and above. The inventive architecture is based on a high density of small diameter vias to manage the integrity of electrical interconnects and simplify electrical routing.

8. 发明授权

US11373965B2 Channelized filter using semiconductor fabrication 有权
公开(公告)号：US11373965B2
公开(公告)日：2022-06-28
申请号：US16916644
申请日：2020-07-17
申请人： Northrop Grumman Systems Corporation
发明人： Dah-Weih Duan , Elizabeth T. Kunkee , Stephane Larouche
IPC分类号： H01L23/66 , H01P1/203
摘要： An exemplary semiconductor technology implemented channelized filter includes a dielectric substrate with semiconductor fabricated metal traces on one surface, and input and output ports. A signal trace connected between the input and output port carries the signal to be filtered. Filter traces connect at intervals along the length of the signal trace to provide a reactance that varies with frequency. Ground traces provide a reference ground. A silicon enclosure with semiconductor fabricated cavities has a metal layer deposited over it. The periphery of the enclosure is dimensioned to engage corresponding ground traces about the periphery of the substrate. Walls of separate cavities enclose each of the filter traces to individually surround each thereby providing electromagnetic field isolation. Metal-to-metal conductive bonds are formed between cavity walls that engage the ground traces to establish a common reference ground. The filter traces preferably meander to minimize the footprint area of the substrate.

9. 发明申请

US20210337638A1 FILTER WITH AN ENCLOSURE HAVING A MICROMACHINED INTERIOR USING SEMICONDUCTOR FABRICATION 有权
公开(公告)号：US20210337638A1
公开(公告)日：2021-10-28
申请号：US16860642
申请日：2020-04-28
申请人： Northrop Grumman Systems Corporation
发明人： Elizabeth T. Kunkee , Dah-Weih Duan , Dino Ferizovic , Chunbo Zhang , Greta S. Tsai , Ming-Jong Shiau , Daniel R. Scherrer , Martn E. Roden
IPC分类号： H05B6/68 , H05B6/80
摘要： An exemplary semiconductor technology implemented microwave filter includes a dielectric substrate with metal traces on one surface that function as frequency selective circuits and reference ground. Other metal traces on the other surface of the substrate also provide reference ground. Bottom and top enclosures that enclose the substrate have respective interior recesses with deposited continuous metal coatings. A plurality of metal bonding bumps or bonding wall extends outwardly from the projecting walls of the bottom and top enclosures. The bonding bumps on the bottom and top enclosures engage reference ground metal traces on respective surfaces of the substrate. As a result of applied pressure, the bonding bumps and respective reference ground metal traces together with the through-substrate vias form a metal-to-metal singly-connected ground reference structure for the entire circuitry.

10. 发明申请

US20170332476A1 RESILIENT MINIATURE INTEGRATED ELECTRICAL CONNECTOR 有权
公开(公告)号：US20170332476A1
公开(公告)日：2017-11-16
申请号：US15150834
申请日：2016-05-10
申请人： Northrop Grumman Systems Corporation
发明人： Charles M. Jackson , Elizabeth T. Kunkee
IPC分类号： H05K1/02 , H01P3/08 , H01P3/06 , H05K1/14
CPC分类号： H05K1/025 , H01R12/523 , H01R12/714 , H01R13/2407 , H05K1/0222 , H05K1/0242 , H05K1/144 , H05K3/184 , H05K3/326 , H05K3/365 , H05K3/4015 , H05K3/4092 , H05K3/467 , H05K3/4679 , H05K2201/0311 , H05K2201/0397 , H05K2201/042 , H05K2201/09663 , H05K2201/09672 , H05K2201/0979 , H05K2201/09809 , H05K2201/10257 , H05K2201/10378
摘要： A resilient electrical connector assembly includes a base PCB and stacked layers of interconnected resilient conductive structures where each structure has at least two resilient conductive strips and at least two conductive contacts. One contact is integrated with a conductive path on the base PCB and another contact pad is positioned to establish a conductive path with a target PCB when the latter is mounted parallel to the base PCB. The resilient conductive strips flex due to a compressive force exerted between the base PCB and target PCB on the stacked layers. The resilient conductive structures are formed by depositing metal to sequentially form each of the stacked layers with one contact being initially formed in engagement with the conductive path on the base PCB.

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