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1. 发明授权

US11837561B2 Channelized filter using semiconductor fabrication 有权
公开(公告)号：US11837561B2
公开(公告)日：2023-12-05
申请号：US18123467
申请日：2023-03-20
申请人： Northrop Grumman Systems Corporation
发明人： Dah-Weih Duan , Elizabeth T. Kunkee , Stephane Larouche
IPC分类号： H01L23/66 , H01P1/203
CPC分类号： H01L23/66 , H01P1/20327 , H01L2223/6627 , H01L2223/6655
摘要： A semiconductor technology implemented high-frequency channelized filter includes a dielectric substrate with metal traces disposed on one of two major surfaces of the substrate. An input and output port disposed on the substrate and one of the metal traces carrying a high-frequency signal to be filtered between the input and output port. Other of the metal traces are connected to the one metal trace at intervals along the length of the one metal trace each providing a reactance to the high-frequency signal where the reactance varies with frequency and additional traces of the metal traces serving as a reference ground for the one metal trace and the other metal traces. A silicon enclosure mounted to the substrate with a first planar surface with cavities in the enclosure that extend through the first surface, and internal walls within the silicon enclosure defining the cavities. A layer of conductive metal covers the first planar surface, cavities and the internal walls. The silicon enclosure having substantially continuous areas of metal on the first planar surface about the periphery of the silicon enclosure that engage corresponding areas of the additional traces about the periphery of the substrate. The cavities surround the respective other metal traces with the internal cavity walls engaging the additional traces adjacent the respective other metal traces to individually surround each of the other metal traces with a conductive metal thereby providing electromagnetic field isolation between each of the other metal traces.

2. 发明申请

US20220020708A1 CHANNELIZED FILTER USING SEMICONDUCTOR FABRICATION 有权
公开(公告)号：US20220020708A1
公开(公告)日：2022-01-20
申请号：US16916644
申请日：2020-07-17
申请人： Northrop Grumman Systems Corporation
发明人： Dah-Weih Duan , Elizabeth T. Kunkee , Stephane Larouche
IPC分类号： H01L23/66 , H01P1/203
摘要： An exemplary semiconductor technology implemented channelized filter includes a dielectric substrate with semiconductor fabricated metal traces on one surface, and input and output ports. A signal trace connected between the input and output port carries the signal to be filtered. Filter traces connect at intervals along the length of the signal trace to provide a reactance that varies with frequency. Ground traces provide a reference ground. A silicon enclosure with semiconductor fabricated cavities has a metal layer deposited over it. The periphery of the enclosure is dimensioned to engage corresponding ground traces about the periphery of the substrate. Walls of separate cavities enclose each of the filter traces to individually surround each thereby providing electromagnetic field isolation. Metal-to-metal conductive bonds are formed between cavity walls that engage the ground traces to establish a common reference ground. The filter traces preferably meander to minimize the footprint area of the substrate.

3. 发明公开

US20230230942A1 CHANNELIZED FILTER USING SEMICONDUCTOR FABRICATION 审中-公开
公开(公告)号：US20230230942A1
公开(公告)日：2023-07-20
申请号：US18123467
申请日：2023-03-20
申请人： Northrop Grumman Systems Corporation
发明人： Dah-Weih Duan , Elizabeth T. Kunkee , Stephane Larouche
IPC分类号： H01L23/66 , H01P1/203
CPC分类号： H01L23/66 , H01P1/20327 , H01L2223/6627 , H01L2223/6655
摘要： A semiconductor technology implemented high-frequency channelized filter includes a dielectric substrate with metal traces disposed on one of two major surfaces of the substrate. An input and output port disposed on the substrate and one of the metal traces carrying a high-frequency signal to be filtered between the input and output port. Other of the metal traces are connected to the one metal trace at intervals along the length of the one metal trace each providing a reactance to the high-frequency signal where the reactance varies with frequency and additional traces of the metal traces serving as a reference ground for the one metal trace and the other metal traces. A silicon enclosure mounted to the substrate with a first planar surface with cavities in the enclosure that extend through the first surface, and internal walls within the silicon enclosure defining the cavities. A layer of conductive metal covers the first planar surface, cavities and the internal walls. The silicon enclosure having substantially continuous areas of metal on the first planar surface about the periphery of the silicon enclosure that engage corresponding areas of the additional traces about the periphery of the substrate. The cavities surround the respective other metal traces with the internal cavity walls engaging the additional traces adjacent the respective other metal traces to individually surround each of the other metal traces with a conductive metal thereby providing electromagnetic field isolation between each of the other metal traces.

4. 发明授权

US11706851B2 RF circuit and enclosure having a micromachined interior using semiconductor fabrication 有权
公开(公告)号：US11706851B2
公开(公告)日：2023-07-18
申请号：US17896425
申请日：2022-08-26
申请人： Northrop Grumman Systems Corporation
发明人： Elizabeth T Kunkee , Dah-Weih Duan , Dino Ferizovic , Chunbo Zhang , Greta S Tsai , Ming-Jong Shiau , Daniel R Scherrer , Martin E Roden
IPC分类号： H05B6/68 , H05B6/80 , H01P1/205
CPC分类号： H05B6/686 , H05B6/80 , H01P1/2053
摘要： An exemplary semiconductor technology implemented microwave filter includes a dielectric substrate with metal traces on one surface that function as frequency selective circuits and reference ground. A top enclosure encloses the substrate have respective interior recesses with deposited continuous metal coatings. A plurality of metal bonding bumps or bonding wall extends outwardly from the projecting walls of the bottom and top enclosures. The bonding bumps on the top enclosure engage reference ground metal traces on respective surface of the substrate. As a result of applied pressure, the bonding bumps and respective reference ground metal traces together with the through-substrate vias form a metal-to-metal singly-connected ground reference structure for the entire circuitry.

5. 发明申请

US20220278059A1 CHANNELIZED FILTER USING SEMICONDUCTOR FABRICATION 有权
公开(公告)号：US20220278059A1
公开(公告)日：2022-09-01
申请号：US17745265
申请日：2022-05-16
申请人： Northrop Grumman Systems Corporation
发明人： Dah-Weih Duan , Elizabeth T. Kunkee , Stephane Larouche
IPC分类号： H01L23/66 , H01P1/203
摘要： A semiconductor technology implemented high-frequency channelized filter includes a dielectric substrate with metal traces disposed on one of two major surfaces of the substrate. An input and output port disposed on the substrate and one of the metal traces carrying a high-frequency signal to be filtered between the input and output port. Other of the metal traces are connected to the one metal trace at intervals along the length of the one metal trace each providing a reactance to the high-frequency signal where the reactance varies with frequency and additional traces of the metal traces serving as a reference ground for the one metal trace and the other metal traces. A silicon enclosure mounted to the substrate with a first planar surface with cavities in the enclosure that extend through the first surface, and internal walls within the silicon enclosure defining the cavities. A layer of conductive metal covers the first planar surface, cavities and the internal walls. The silicon enclosure having substantially continuous areas of metal on the first planar surface about the periphery of the silicon enclosure that engage corresponding areas of the additional traces about the periphery of the substrate. The cavities surround the respective other metal traces with the internal cavity walls engaging the additional traces adjacent the respective other metal traces to individually surround each of the other metal traces with a conductive metal thereby providing electromagnetic field isolation between each of the other metal traces.

6. 发明授权

US12122666B2 Microelectronics H-frame device 有权
公开(公告)号：US12122666B2
公开(公告)日：2024-10-22
申请号：US17198700
申请日：2021-03-11
申请人： Northrop Grumman Systems Corporation
发明人： Dah-Weih Duan , Elizabeth T. Kunkee , Martin E. Roden , Laura M. Woo
IPC分类号： B81B7/00 , B81C3/00
CPC分类号： B81B7/0006 , B81B7/0019 , B81C3/001 , B81C3/005 , B81B2207/07 , B81B2207/091
摘要： A microelectronics H-frame device includes: a stack of two or more substrates wherein the substrate stack comprises a top substrate and a bottom substrate, wherein bonding of the top substrate to the bottom substrate creates a vertical electrical connection between the top substrate and the bottom substrate, wherein the top surface of the top substrate comprises top substrate top metallization, wherein the bottom surface of the bottom substrate comprises bottom substrate bottom metallization; mid-substrate metallization located between the top substrate and the bottom substrate; a micro-machined top cover bonded to a top side of the substrate stack; and a micro-machined bottom cover bonded to a bottom side of the substrate stack.

7. 发明授权

US12022608B2 Radio frequency crossover with high isolation in microelectronics H-frame device 有权
公开(公告)号：US12022608B2
公开(公告)日：2024-06-25
申请号：US17219103
申请日：2021-03-31
申请人： Northrop Grumman Systems Corporation
发明人： Dah-Weih Duan , Elizabeth T. Kunkee , Martin E. Roden , Laura M. Woo
IPC分类号： H05K1/02 , H01L23/04 , H01L23/522 , H01L23/528 , H01L23/66 , H01P3/08
CPC分类号： H05K1/0237 , H01L23/04 , H01L23/5221 , H01L23/5226 , H01L23/528 , H01L23/66 , H01P3/08
摘要： A microelectronics H-frame device comprising an RF crossover includes: a stack of two or more substrates, wherein a bottom surface of a top substrate comprises top substrate bottom metallization, and wherein a top surface of a bottom substrate comprises bottom substrate top metallization, wherein the top substrate bottom metallization and the bottom substrate top metallization form a ground plane that provides isolation to allow a first signal line to traverse one or more of the top substrate and the bottom substrate without being disturbed by a second signal line traversing one or more of the top substrate and the bottom substrate at a non-zero angle relative to the first signal line, at least one of the first signal line and the second signal line passing to a second level with the protection of the ground plane, thereby providing isolation from the other signal line.

8. 发明授权

US11658136B2 Channelized filter using semiconductor fabrication 有权
公开(公告)号：US11658136B2
公开(公告)日：2023-05-23
申请号：US17745265
申请日：2022-05-16
申请人： Northrop Grumman Systems Corporation
发明人： Dah-Weih Duan , Elizabeth T. Kunkee , Stephane Larouche
IPC分类号： H01L23/66 , H01P1/203
CPC分类号： H01L23/66 , H01P1/20327 , H01L2223/6627 , H01L2223/6655
摘要： A semiconductor technology implemented high-frequency channelized filter includes a dielectric substrate with metal traces disposed on one of two major surfaces of the substrate. An input and output port disposed on the substrate and one of the metal traces carrying a high-frequency signal to be filtered between the input and output port. Other of the metal traces are connected to the one metal trace at intervals along the length of the one metal trace each providing a reactance to the high-frequency signal where the reactance varies with frequency and additional traces of the metal traces serving as a reference ground for the one metal trace and the other metal traces. A silicon enclosure mounted to the substrate with a first planar surface with cavities in the enclosure that extend through the first surface, and internal walls within the silicon enclosure defining the cavities. A layer of conductive metal covers the first planar surface, cavities and the internal walls. The silicon enclosure having substantially continuous areas of metal on the first planar surface about the periphery of the silicon enclosure that engage corresponding areas of the additional traces about the periphery of the substrate. The cavities surround the respective other metal traces with the internal cavity walls engaging the additional traces adjacent the respective other metal traces to individually surround each of the other metal traces with a conductive metal thereby providing electromagnetic field isolation between each of the other metal traces.

9. 发明申请

US20220408526A1 RF CIRCUIT AND ENCLOSURE HAVING A MICROMACHINED INTERIOR USING SEMICONDUCTOR FABRICATION 有权
公开(公告)号：US20220408526A1
公开(公告)日：2022-12-22
申请号：US17896425
申请日：2022-08-26
申请人： Northrop Grumman Systems Corporation
发明人： Elizabeth T. Kunkee , Dah-Weih Duan , Dino Ferizovic , Chunbo Zhang , Greta S. Tsai , Ming-Jong Shiau , Daniel R. Scherrer , Martin E. Roden
IPC分类号： H05B6/68 , H05B6/80
摘要： An exemplary semiconductor technology implemented microwave filter includes a dielectric substrate with metal traces on one surface that function as frequency selective circuits and reference ground. A top enclosure encloses the substrate have respective interior recesses with deposited continuous metal coatings. A plurality of metal bonding bumps or bonding wall extends outwardly from the projecting walls of the bottom and top enclosures. The bonding bumps on the top enclosure engage reference ground metal traces on respective surface of the substrate. As a result of applied pressure, the bonding bumps and respective reference ground metal traces together with the through-substrate vias form a metal-to-metal singly-connected ground reference structure for the entire circuitry.

10. 发明授权

US09761547B1 Crystalline tile 有权
公开(公告)号：US09761547B1
公开(公告)日：2017-09-12
申请号：US15295357
申请日：2016-10-17
申请人： Northrop Grumman Systems Corporation
发明人： Elizabeth T. Kunkee , Charles M. Jackson , Dah-Weih Duan
IPC分类号： H01L23/02 , H01L23/66 , H01L23/498 , H01L21/48 , H01L21/78 , H01P5/12 , H01P3/08 , H01P1/203 , H03H7/42
CPC分类号： H01L23/66 , H01L21/4853 , H01L21/486 , H01L21/78 , H01L23/49827 , H01L23/49833 , H01L2223/6611 , H01L2223/6627 , H01L2223/6677 , H01L2223/6683 , H01L2224/16225 , H01P1/2013 , H01P1/203 , H01P3/08 , H01P3/088 , H01P5/12 , H03H7/42
摘要： A system and method for vertically integrating heterogeneous devices into a 3D tile architecture are disclosed. The system uses high precision microelectronics fabrication techniques and known-good-die to achieve high yield to integrate devices to process radio frequency signals at microwave frequencies of approximately 300 MHz to 300 GHz and above. The inventive architecture is based on a high density of small diameter vias to manage the integrity of electrical interconnects and simplify electrical routing.

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