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1. 发明申请

US20050129860A1 Method and apparatus for preparing thin resin film 审中-公开
标题翻译：制备薄树脂膜的方法和设备
公开(公告)号：US20050129860A1
公开(公告)日：2005-06-16
申请号：US10480347
申请日：2003-04-02
申请人： Noriyasu Echigo , Hiroshi Satani , Hideki Okumura , Hisaaki Tachihara
发明人： Noriyasu Echigo , Hiroshi Satani , Hideki Okumura , Hisaaki Tachihara
IPC分类号： B05D7/24 , C23C14/12 , C23C14/24 , H01G4/14 , H01L51/52 , B05D3/02 , B05C5/00 , B05D1/02 , B67B7/00
CPC分类号： H01G4/145 , B05D1/60 , C23C14/12 , C23C14/246 , H01L51/5256
摘要： A liquid resin material stored in a resin material cup is sent to a supply tank under pressure through a primary side supply pipe by increasing the pressure in a pressure tank. The supply tank is provided with a piston that is displaced in accordance with the amount of the resin material in the supply tank, and the resin material is quantified by the stroke of the piston. The quantified resin material is sent to a heating member through an evaporation side supply pipe, is evaporated by heating, and condenses on a substrate. The resin material is quantified by filling the supply tank with the resin material temporarily, and only the filling resin material is sent to the heating member. Therefore, an evaporation amount becomes constant, and as a result, the thickness of a resin thin film is stabilized.
摘要翻译：通过增加压力罐中的压力，将储存在树脂材料杯中的液态树脂材料通过初级侧供给管在压力下送入供给箱。供应罐设有根据供应罐中的树脂材料量移动的活塞，并且树脂材料由活塞的行程量化。定量树脂材料通过蒸发侧供应管送到加热件，通过加热蒸发，并在基材上冷凝。树脂材料通过临时填充供给槽与树脂材料进行定量，仅将填充树脂材料送至加热部件。因此，蒸发量变得恒定，结果树脂薄膜的厚度稳定。

2. 发明申请

US20130069145A1 POWER SEMICONDUCTOR DEVICE 有权
标题翻译：功率半导体器件
公开(公告)号：US20130069145A1
公开(公告)日：2013-03-21
申请号：US13419396
申请日：2012-03-13
申请人： Takahiro Kawano , Hideki Okumura
发明人： Takahiro Kawano , Hideki Okumura
IPC分类号： H01L29/78 , H01L23/48
CPC分类号： H01L23/48 , H01L29/0653 , H01L29/0661 , H01L29/407 , H01L29/7811 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： A power semiconductor device according to one embodiment includes a first electrode, a semiconductor substrate provided on the first electrode, and an insulating member. A terminal trench is made in the upper surface of the semiconductor substrate in a region including a boundary between a cell region and a terminal region. The semiconductor substrate includes a first portion of a first conductivity type and connected to the first electrode, a second portion of the first conductivity type, a third portion of a second conductivity type provided on the second portion in the cell region and connected to the second electrode, and a fourth portion of the first conductivity type selectively provided on the third portion and connected to the second electrode. The insulating member is disposed between the third portion and the second portion in a direction from the cell region toward the terminal region.
摘要翻译：根据一个实施例的功率半导体器件包括第一电极，设置在第一电极上的半导体衬底和绝缘构件。在包括单元区域和端子区域之间的边界的区域中，在半导体衬底的上表面中形成端子沟槽。半导体衬底包括第一导电类型的第一部分并连接到第一电极，第一导电类型的第二部分，第二导电类型的第三部分，设置在电池区域的第二部分上，并连接到第二导电类型的第二部分电极，以及选择性地设置在第三部分上并连接到第二电极的第一导电类型的第四部分。绝缘构件在从单元区域朝向端子区域的方向上配置在第三部分和第二部分之间。

3. 发明授权

US08173509B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08173509B2
公开(公告)日：2012-05-08
申请号：US12714586
申请日：2010-03-01
申请人： Hideki Okumura , Takayoshi Nogami , Hiroto Misawa
发明人： Hideki Okumura , Takayoshi Nogami , Hiroto Misawa
IPC分类号： H01L29/80 , H01L31/112
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/1095 , H01L29/41766 , H01L29/6634 , H01L29/66348 , H01L29/66727 , H01L29/66734 , H01L29/7397
摘要： A type semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; a third semiconductor layer of the first conductivity type; a plurality of gate electrodes which are formed in gate trenches via gate insulating films, the gate trenches being formed through the second semiconductor layer and the third semiconductor layer; a plurality of impurity regions of the second conductivity type which are formed at regions below bottoms of contact trenches, the contact trenches being formed at the third semiconductor layer in a thickness direction thereof between corresponding ones of the gate trenches and longitudinal cross sections of the contact trenches being shaped in ellipse, respectively; first electrodes which are formed so as to embed the contact trenches and contacted with the impurity regions, respectively; and a second electrode formed on a rear surface of the semiconductor substrate.
摘要翻译：一种半导体器件包括：第一导电类型的第一半导体层; 第二导电类型的第二半导体层; 第一导电类型的第三半导体层; 通过栅极绝缘膜形成在栅极沟槽中的多个栅电极，栅极沟槽通过第二半导体层和第三半导体层形成; 多个第二导电类型的杂质区域形成在接触沟底部下方的区域处，所述接触沟槽在第三半导体层的厚度方向上形成在相应的栅极沟槽和触点的纵向截面之间沟槽分别成椭圆形; 第一电极被形成为分别嵌入接触沟槽并与杂质区域接触; 以及形成在所述半导体衬底的后表面上的第二电极。

4. 发明授权

US08006878B2 Splitting method and device for connecting rod 失效
标题翻译：连杆分裂方法及装置
公开(公告)号：US08006878B2
公开(公告)日：2011-08-30
申请号：US11667677
申请日：2005-11-22
申请人： Hideki Okumura , Yuukou Hashimoto , Tsuguo Koguchi
发明人： Hideki Okumura , Yuukou Hashimoto , Tsuguo Koguchi
IPC分类号： B26F3/02
CPC分类号： B23D31/003 , F16C9/045 , Y10T225/12 , Y10T225/307 , Y10T225/35 , Y10T225/371 , Y10T225/379
摘要： A splitting devices for a connecting rod, having a fixed stage fixed on a base, a movable stage installed so as to be approachable and departable from the fixed stage, a load mechanism for applying a breaking load to a press fit direction of a wedge member, and second hydraulic cylinders for clamping a cap section by pressing from above an end section of third work support members. The third work support members and the second hydraulic cylinders are individually fixed to the movable stage so as to be displaceable together with the movable stage.
摘要翻译：一种用于连杆的分离装置，具有固定在基座上的固定台，安装成可接近和离开固定台的可移动台，用于将楔形构件的压配合方向施加断裂载荷的载荷机构以及第二液压缸，用于通过从第三工作支撑构件的端部上方按压而夹紧盖部。第三工件支撑构件和第二液压缸单独地固定到可动台，以便与可移动台一起移动。

5. 发明授权

US07391077B2 Vertical type semiconductor device 失效
标题翻译：垂直型半导体器件
公开(公告)号：US07391077B2
公开(公告)日：2008-06-24
申请号：US10983658
申请日：2004-11-09
申请人： Kenichi Tokano , Atsuko Yamashita , Koichi Takahashi , Hideki Okumura , Shingo Sato
发明人： Kenichi Tokano , Atsuko Yamashita , Koichi Takahashi , Hideki Okumura , Shingo Sato
IPC分类号： H01L21/764
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0653 , H01L29/66712
摘要： Provided is a semiconductor device including a semiconductor substrate which includes a first semiconductor layer of a first conductivity and a pair of second semiconductor layers disposed on the first semiconductor layer and spaced apart from each other to form a trench therebetween, wherein the second semiconductor layer includes a first impurity-diffused region of the first conductivity extending from a lower surface toward an upper surface of the second semiconductor layer, and a second impurity-diffused region of a second conductivity which extends from the lower surface toward the upper surface and is adjacent to the first impurity-diffused region, an insulating layer covering a sidewall of the trench, and a cap layer which is in contact with the semiconductor substrate and covers an opening of the trench to form an enclosed space in the trench, a material of the cap layer being almost the same as that of the semiconductor substrate.
摘要翻译：提供了一种半导体器件，其包括半导体衬底，该半导体衬底包括第一导电性的第一半导体层和设置在第一半导体层上并且彼此间隔开以在其间形成沟槽的一对第二半导体层，其中第二半导体层包括从第一半导体层的下表面向上表面延伸的第一导电性的第一杂质扩散区和从下表面向上表面延伸的第二导电性的第二杂质扩散区，第一杂质扩散区域，覆盖沟槽的侧壁的绝缘层，以及与半导体衬底接触并覆盖沟槽的开口以在沟槽中形成封闭空间的覆盖层，帽的材料层几乎与半导体衬底的层相同。

6. 发明申请

US20070285446A1 Liquid consumption apparatus and liquid amount determination method 审中-公开
标题翻译：液体消耗装置和液体量测定方法
公开(公告)号：US20070285446A1
公开(公告)日：2007-12-13
申请号：US11808311
申请日：2007-06-08
申请人： Satoshi Shinada , Taku Ishizawa , Masayoshi Katayama , Noboru Asauchi , Hideki Okumura
发明人： Satoshi Shinada , Taku Ishizawa , Masayoshi Katayama , Noboru Asauchi , Hideki Okumura
IPC分类号： B41J2/195
CPC分类号： B41J2/17566 , B41J2/17546 , B41J29/38 , B41J29/393
摘要： The printer 10 executes an ink end detection process A while a print job is underway and an ink end detection process B when a print job has been completed. In the ink end detection process A, the printer 10 applies a first drive signal to detect that the amount of ink housed in the ink cartridge CA is equal to or less than a prescribed amount. In the ink end detection process B, the printer 10 applies a second drive signal to detect that the amount of ink housed in the ink cartridge CA exceeds the prescribed amount.
摘要翻译：打印机10在打印作业正在进行时执行墨水结束检测处理A，并且在打印作业完成时执行墨水结束检测处理B. 在墨水结束检测处理A中，打印机10施加第一驱动信号，以检测容纳在墨盒CA中的墨量等于或小于规定量。在墨水结束检测处理B中，打印机10施加第二驱动信号，以检测容纳在墨盒CA中的墨水量超过规定量。

7. 发明授权

US07262477B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07262477B2
公开(公告)日：2007-08-28
申请号：US10694903
申请日：2003-10-29
申请人： Hideki Okumura , Hitoshi Kobayashi , Masanobu Tsuchitani , Akihiro Osawa , Satoshi Aida , Shigeo Kouzuki , Masaru Izumisawa
发明人： Hideki Okumura , Hitoshi Kobayashi , Masanobu Tsuchitani , Akihiro Osawa , Satoshi Aida , Shigeo Kouzuki , Masaru Izumisawa
IPC分类号： H01L21/8238 , H01L29/00
CPC分类号： H01L21/76224 , H01L21/316 , H01L21/31695 , H01L29/0634 , H01L29/0653 , H01L29/7802
摘要： There is provided a semiconductor device including a semiconductor substrate with a trench, and a particulate insulating layer filling at least a lower portion of the trench and containing insulating particles. The semiconductor device may further include a reflowable dielectric layer covering an upper surface of the particulate insulating layer, the insulating particles being stable at the melting point or the softening point of the reflowable dielectric layer.
摘要翻译：提供了一种包括具有沟槽的半导体衬底和填充至少沟槽的下部并且包含绝缘颗粒的颗粒绝缘层的半导体器件。半导体器件还可以包括覆盖颗粒绝缘层的上表面的可回流电介质层，绝缘颗粒在可回流电介质层的熔点或软化点是稳定的。

8. 发明授权

US07850263B2 Liquid consumption apparatus and liquid consumption amount control method 有权
标题翻译：液体消耗装置和液体消耗量控制方法
公开(公告)号：US07850263B2
公开(公告)日：2010-12-14
申请号：US11755548
申请日：2007-05-30
申请人： Satoshi Shinada , Taku Ishizawa , Masayoshi Katayama , Noboru Asauchi , Hideki Okumura
发明人： Satoshi Shinada , Taku Ishizawa , Masayoshi Katayama , Noboru Asauchi , Hideki Okumura
IPC分类号： B41J2/195 , B41J29/393
CPC分类号： B41J2/17566 , B41J2/1753 , B41J2/17546 , B41J2002/17569 , B41J2002/17573 , B41J2002/17583
摘要： The invention provides a liquid consumption apparatus including a liquid consumption unit, a counting unit that counts the amount of the liquid consumed by the liquid consumption unit as a liquid consumption amount, a reception unit that receives a detection signal indicating that the amount of the liquid contained in the liquid container is not more than a predetermined amount; a detection-time liquid amount memory unit that memorizes the liquid consumption amount at the time of reception of the detection signal as a detection-time liquid consumption amount, and a judgment unit that judges that the liquid container is empty when the amount of difference between the liquid consumption amount and the detection-time liquid consumption amount is not more than a specified amount.
摘要翻译：本发明提供了一种液体消耗装置，包括：液体消耗单元;计数单元，其计量由液体消耗单元消耗的液体的量作为液体消耗量;接收单元，其接收指示液体量的检测信号容纳在液体容器中的量不大于预定量; 检测时间液量存储单元，其将接收到检测信号时的液体消耗量存储为检测时间液体消耗量;以及判断单元，当判断为液体容器为空时，液体消耗量和检测时间液体消耗量不大于规定量。

9. 发明申请

US20070256300A1 Method and Device for Machining Cracking Groove for Connecting Rod 审中-公开
标题翻译：用于加工连杆开裂槽的方法和装置
公开(公告)号：US20070256300A1
公开(公告)日：2007-11-08
申请号：US11662609
申请日：2005-11-22
申请人： Hideki Okumura , Tsuguo Koguchi
发明人： Hideki Okumura , Tsuguo Koguchi
IPC分类号： B23P13/00
CPC分类号： F16C9/045 , B23C3/30 , B23C2215/245 , B23C2270/18 , B23D45/003 , B23D47/12 , Y10T29/49288 , Y10T409/309576
摘要： A method and a device for machining a cracking groove for a connecting rod, wherein a drive pulley is rotated under the driving action of a rotatingly driving source installed in a body to transmit the rotatingly driving force of the drive pulley to a driven pulley through a drive force transmission belt so as to rotate a groove machining part integrally connected to the driven pulley. In the groove machining part, a spindle integrally connected to the driven pulley is rotatably supported on a support part, and a saw having a plurality of blade parts on the outer peripheral surface thereof is installed on the holding part of the spindle. A first groove of roughly V-shape in cross section is formed in the large end hole of a connecting rod by inserting the metal saw into the large end hole of the connecting rod, and a second groove of roughly V-shape in cross section which is symmetrical with the first groove is formed in the connecting rod at a position opposed to the first groove with respect to the axis of the connecting rod.
摘要翻译：一种用于加工用于连杆的裂缝槽的方法和装置，其中驱动皮带轮在安装在本体内的旋转驱动源的驱动作用下旋转，以将驱动滑轮的旋转驱动力传递到从动滑轮，通过驱动力传递带，以使与从动带轮一体连接的槽加工部旋转。在槽加工部中，与从动带轮一体连接的心轴可旋转地支撑在支撑部上，在其外周面上具有多个叶片部的锯安装在主轴的保持部上。通过将金属锯插入连杆的大端孔中，在连接杆的大端孔中形成大致V字形的第一槽，并且横截面为大致V形的第二槽是对称的，第一槽在相对于连杆的轴线与第一槽相对的位置处形成在连杆中。

10. 发明申请

US20050121704A1 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050121704A1
公开(公告)日：2005-06-09
申请号：US10983658
申请日：2004-11-09
申请人： Kenichi Tokano , Atsuko Yamashita , Koichi Takahashi , Hideki Okumura , Shingo Sato
发明人： Kenichi Tokano , Atsuko Yamashita , Koichi Takahashi , Hideki Okumura , Shingo Sato
IPC分类号： H01L21/764 , H01L21/265 , H01L21/336 , H01L21/76 , H01L29/06 , H01L29/76 , H01L29/78
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0653 , H01L29/66712
摘要： Provided is a semiconductor device including a semiconductor substrate which includes a first semiconductor layer of a first conductivity and a pair of second semiconductor layers disposed on the first semiconductor layer and spaced apart from each other to form a trench therebetween, wherein the second semiconductor layer includes a first impurity-diffused region of the first conductivity extending from a lower surface toward an upper surface of the second semiconductor layer, and a second impurity-diffused region of a second conductivity which extends from the lower surface toward the upper surface and is adjacent to the first impurity-diffused region, an insulating layer covering a sidewall of the trench, and a cap layer which is in contact with the semiconductor substrate and covers an opening of the trench to form an enclosed space in the trench, a material of the cap layer being almost the same as that of the semiconductor substrate.
摘要翻译：提供了一种半导体器件，其包括半导体衬底，该半导体衬底包括第一导电性的第一半导体层和设置在第一半导体层上并且彼此间隔开以在其间形成沟槽的一对第二半导体层，其中第二半导体层包括从第一半导体层的下表面向上表面延伸的第一导电性的第一杂质扩散区和从下表面向上表面延伸的第二导电性的第二杂质扩散区，第一杂质扩散区域，覆盖沟槽的侧壁的绝缘层，以及与半导体衬底接触并覆盖沟槽的开口以在沟槽中形成封闭空间的覆盖层，帽的材料层几乎与半导体衬底的层相同。

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