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1. 发明授权

US07294558B2 Method and apparatus for cleaving a wafer through expansion resulting from vaporization or freezing of liquid 有权
标题翻译：用于通过由液体的蒸发或冷冻引起的膨胀来切割晶片的方法和装置
公开(公告)号：US07294558B2
公开(公告)日：2007-11-13
申请号：US11072331
申请日：2005-03-07
申请人： Noriko Shimizu , Shinya Takyu , Tetsuya Kurosawa
发明人： Noriko Shimizu , Shinya Takyu , Tetsuya Kurosawa
IPC分类号： H01L21/30 , B26B7/10 , B26F3/00
CPC分类号： B28D5/0011 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/50 , H01L21/304 , H01L21/78 , Y10T83/041 , Y10T225/30
摘要： A starting point for cleavage made up of at least one of a groove and a through hole is formed on a chip dividing line or a dicing line along the cleaved surface of a wafer. Liquid matter is injected into the starting point. Then, the liquid matter is changed by applying an external factor that changes the liquid matter physically. Making use of the change, the wafer is cleaved so as to divide the wafer into semiconductor chips.
摘要翻译：沿着切割面的芯片分割线或切割线形成由凹槽和通孔中的至少一个构成的切割的起始点。将液体物质注入起点。然后，通过施加物理地改变液体物质的外部因素来改变液体物质。利用该变化，晶片被切割以将晶片分成半导体芯片。

2. 发明申请

US20050196899A1 Method and apparatus for cleaving a wafer through expansion resulting from vaporization or freezing of liquid 有权
标题翻译：用于通过由液体的蒸发或冷冻引起的膨胀来切割晶片的方法和装置
公开(公告)号：US20050196899A1
公开(公告)日：2005-09-08
申请号：US11072331
申请日：2005-03-07
申请人： Noriko Shimizu , Shinya Takyu , Tetsuya Kurosawa
发明人： Noriko Shimizu , Shinya Takyu , Tetsuya Kurosawa
IPC分类号： H01L21/301 , B28D5/00 , H01L21/78
CPC分类号： B28D5/0011 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/50 , H01L21/304 , H01L21/78 , Y10T83/041 , Y10T225/30
摘要： A starting point for cleavage made up of at least one of a groove and a through hole is formed on a chip dividing line or a dicing line along the cleaved surface of a wafer. Liquid matter is injected into the starting point. Then, the liquid matter is changed by applying an external factor that changes the liquid matter physically. Making use of the change, the wafer is cleaved so as to divide the wafer into semiconductor chips.
摘要翻译：沿着切割面的芯片分割线或切割线形成由凹槽和通孔中的至少一个构成的切割的起始点。将液体物质注入起点。然后，通过施加物理地改变液体物质的外部因素来改变液体物质。利用该变化，晶片被切割以将晶片分成半导体芯片。

3. 发明申请

US20110068480A1 SEMICONDUCTOR DEVICE AND ADHESIVE SHEET 有权
标题翻译：半导体器件和粘合片
公开(公告)号：US20110068480A1
公开(公告)日：2011-03-24
申请号：US12730007
申请日：2010-03-23
申请人： Hidekazu Hayashi , Hiroshi Tomita , Junya Sagara , Shinya Takyu , Norihiro Togasaki , Tetsuya Kurosawa , Yukiko Kitajima
发明人： Hidekazu Hayashi , Hiroshi Tomita , Junya Sagara , Shinya Takyu , Norihiro Togasaki , Tetsuya Kurosawa , Yukiko Kitajima
IPC分类号： H01L23/12 , C08K3/34 , C08L63/00 , C08K3/10
CPC分类号： C09J163/00 , C08K3/08 , C08K5/0091 , C08L63/00 , H01L23/3121 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/48 , H01L24/73 , H01L25/0657 , H01L2224/29 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/484 , H01L2224/732 , H01L2224/73265 , H01L2225/0651 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/0102 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01051 , H01L2924/01073 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01088 , H01L2924/0665 , H01L2924/181 , H01L2924/1815 , H01L2924/00 , H01L2924/00012 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/45099 , H01L2224/05599
摘要： The present invention provides a semiconductor device which comprises a substrate, a first semiconductor chip on a substrate, a second semiconductor chip on the first semiconductor chip, and an adhesive sheet between the first and second semiconductor chips. The second semiconductor chip has a mirrored back surface, and the adhesive sheet contains a metal impurity ion trapping agent.
摘要翻译：本发明提供一种半导体器件，其包括衬底，衬底上的第一半导体芯片，第一半导体芯片上的第二半导体芯片以及第一和第二半导体芯片之间的粘合片。第二半导体芯片具有镜像背面，并且粘合片含有金属杂质离子捕获剂。

4. 发明授权

US07631680B2 Method of and mechanism for peeling adhesive tape bonded to segmented semiconductor wafer 失效
标题翻译：剥离粘合到分段半导体晶片的胶带的方法和机理
公开(公告)号：US07631680B2
公开(公告)日：2009-12-15
申请号：US10911511
申请日：2004-08-05
申请人： Tetsuya Kurosawa , Shinya Takyu
发明人： Tetsuya Kurosawa , Shinya Takyu
IPC分类号： B32B38/10 , H01L21/46
CPC分类号： H01L21/6835 , H01L21/67132 , H01L21/6836 , H01L2221/68322 , H01L2221/68327 , H01L2221/6834 , H01L2221/6839 , Y10T29/41 , Y10T156/1132 , Y10T156/1168 , Y10T156/1944
摘要： An adhesive tape peeling mechanism has an adhering section and a porous member. The adhering section adheres to a segmented semiconductor wafer bonded to adhesive tape. The porous member is provided on the surface adhering to the semiconductor wafer of the adhering section. The porous member is divided into at least two adhering areas in the direction in which the adhesive tape is peeled. The porous member adheres to the semiconductor wafer by suction and fixes the wafer in place.
摘要翻译：胶带剥离机构具有粘接部和多孔部件。粘合部分粘合到粘合到胶带上的分段半导体晶片。多孔构件设置在粘附到粘合部的半导体晶片的表面上。多孔构件沿着剥离胶带的方向分成至少两个粘合区域。多孔构件通过抽吸粘附到半导体晶片上并将晶片固定就位。

5. 发明申请

US20050003636A1 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20050003636A1
公开(公告)日：2005-01-06
申请号：US10815934
申请日：2004-04-02
申请人： Shinya Takyu , Tetsuya Kurosawa , Kinya Mochida , Kenichi Watanabe
发明人： Shinya Takyu , Tetsuya Kurosawa , Kinya Mochida , Kenichi Watanabe
IPC分类号： H01L21/301 , H01L21/304 , H01L21/58 , H01L21/68 , H01L21/78 , H01L21/44 , H01L21/46 , H01L21/48 , H01L21/50
CPC分类号： H01L21/6835 , H01L21/304 , H01L21/3043 , H01L21/6836 , H01L21/78 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2221/68327 , H01L2221/6834 , H01L2221/68363 , H01L2221/68381 , H01L2221/6839 , H01L2224/274 , H01L2224/2919 , H01L2224/83191 , H01L2224/8385 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01033 , H01L2924/01078 , H01L2924/01082 , H01L2924/0665 , H01L2924/07802 , H01L2924/09701 , H01L2924/12042 , H01L2924/00 , H01L2924/3512
摘要： A manufacturing method of a semiconductor device includes: providing a groove having a thickness equal to or larger than a finishing thickness on a first surface of a semiconductor wafer on which a semiconductor element is formed; affixing a PSA tape onto the first surface of the semiconductor wafer in which the groove is formed; reducing the thickness of the semiconductor wafer by processing a second surface opposite to the first surface of the semiconductor wafer onto which the PSA tape is affixed, so as to separate the semiconductor wafer into a plurality of semiconductor chips on which the semiconductor element is formed; affixing an adhesive layer onto an entire rear surface of the separated semiconductor wafer; cutting the adhesive layer so as to separate the adhesive layer for each of the semiconductor chips; and peeling off the PSA tape from the semiconductor wafer while fixing the semiconductor wafer under suction by use of a porous member segmented into at least two sucking areas.
摘要翻译：半导体器件的制造方法包括：在其上形成有半导体元件的半导体晶片的第一表面上设置具有等于或大于精加工厚度的厚度的凹槽; 将PSA胶带固定到形成有所述凹槽的所述半导体晶片的所述第一表面上; 通过处理与固定有PSA带的半导体晶片的第一表面相对的第二表面来减小半导体晶片的厚度，以将半导体晶片分离成形成半导体元件的多个半导体芯片; 将粘合剂层附着在所分离的半导体晶片的整个后表面上; 切割粘合剂层以分离每个半导体芯片的粘合剂层; 以及通过使用分段在至少两个吸引区域中的多孔构件将半导体晶片固定在吸力下，同时从半导体晶片剥离PSA带。

6. 发明授权

US06337258B1 Method of dividing a wafer 有权
标题翻译：分割晶片的方法
公开(公告)号：US06337258B1
公开(公告)日：2002-01-08
申请号：US09620709
申请日：2000-07-20
申请人： Hideo Nakayoshi , Shinya Takyu , Keisuke Tokubuchi , Tetsuya Kurosawa
发明人： Hideo Nakayoshi , Shinya Takyu , Keisuke Tokubuchi , Tetsuya Kurosawa
IPC分类号： H01L2146
CPC分类号： H01L21/3043 , H01L21/78 , H01L2224/32245 , H01L2224/48465 , H01L2224/73215 , H01L2224/73265 , H01L2224/83194 , H01L2924/01079 , H01L2924/01322
摘要： Grooves are formed in an element formation surface of a wafer along dicing lines or chip dividing lines. The grooves are deeper than a thickness of a finished chip. A holding member is attached on the element formation surface of the wafer. A bottom surface of the wafer is lapped and polished to the thickness of the finished chip, thereby dividing the wafer into chips. The chips are transferred while being held by porous adsorption.
摘要翻译：沟槽沿着切割线或芯片分割线形成在晶片的元件形成表面中。凹槽比成品芯片的厚度更深。保持构件附接在晶片的元件形成表面上。将晶片的底表面研磨并抛光至成品芯片的厚度，从而将晶片分成芯片。在通过多孔吸附保持时转移芯片。

7. 发明申请

US20050023260A1 Semiconductor wafer dividing apparatus and semiconductor device manufacturing method 审中-公开
标题翻译：半导体晶片分割装置及半导体装置的制造方法
公开(公告)号：US20050023260A1
公开(公告)日：2005-02-03
申请号：US10846673
申请日：2004-05-17
申请人： Shinya Takyu , Tetsuya Kurosawa , Ninao Sato
发明人： Shinya Takyu , Tetsuya Kurosawa , Ninao Sato
IPC分类号： B23K26/38 , B23K26/40 , B28D5/00 , H01L21/00 , B23K26/14
CPC分类号： H01L21/67092 , B23K26/40 , B23K2101/40 , B23K2103/50 , B28D5/0011
摘要： A semiconductor device manufacturing apparatus includes etching equipment, damage forming equipment, dividing equipment and removing equipment. The etching equipment etches a film formed on an element forming surface of a semiconductor wafer, thereby defining a dicing line or a chip-dividing line. The damage forming equipment forms damage layers used as starting points to divide a semiconductor wafer into discrete semiconductor chips on a rear surface side of the semiconductor wafer which is opposite to an element forming surface. The dividing equipment divides the semiconductor wafer into discrete semiconductor chips with the damage layers used as the starting points. The removing equipment removes a rear surface portion of the semiconductor wafer to at least a depth where the damage layers are no more present.
摘要翻译：半导体器件制造装置包括蚀刻设备，损坏形成设备，分割设备和移除设备。蚀刻设备蚀刻形成在半导体晶片的元件形成表面上的膜，从而限定切割线或切屑分割线。损伤形成设备形成用作起点的损伤层，以将半导体晶片分成与元件形成表面相对的半导体晶片的背面侧上的分立半导体芯片。分割设备将半导体晶片分为分立半导体芯片，其中损伤层用作起点。去除设备将半导体晶片的后表面部分移至至少不存在损伤层的深度。

8. 发明授权

US06774011B2 Chip pickup device and method of manufacturing semiconductor device 失效
标题翻译：芯片拾取装置及半导体装置的制造方法
公开(公告)号：US06774011B2
公开(公告)日：2004-08-10
申请号：US09920628
申请日：2001-08-03
申请人： Takahito Nakazawa , Tetsuya Kurosawa , Hideo Numata , Shinya Takyu
发明人： Takahito Nakazawa , Tetsuya Kurosawa , Hideo Numata , Shinya Takyu
IPC分类号： H01L2146
CPC分类号： H01L21/67276 , H01L21/67132 , H01L2221/68318
摘要： A pickup device comprises a thrusting mechanism, a carrying mechanism and a controller. The thrusting mechanism is configured to thrust the chips sequentially by using pins from a back side of the adhesive tape with the adhesive tape between the chips and the pins so as to peel the chips off the adhesive tape. The carrying mechanism is configured to sequentially absorb the chips with use of a collet, hold the chips to be absorbed until the chips are peeled off the adhesive tape, thereafter pick the chips up by ascending the collet in order to be carried the chips to a subsequent process stage. The controller is configured to controlling the thrust of the chip by thrusting mechanism, the controller control an ascend time and a descend time of the pins, and keeping a predetermined period of a time when the pins arrive at their peak.
摘要翻译：拾取装置包括推压机构，承载机构和控制器。推力机构构造成通过使用来自胶带的背面的销从而将芯片顺序地推出，并且将芯片与销之间的粘合带剥离，从而将芯片从胶带剥离。携带机构被配置为使用夹头顺序地吸收芯片，保持待吸收的芯片直到芯片从胶带剥离，然后通过升高夹头来拾取芯片，以将芯片运送到后续流程阶段。控制器被配置为通过推压机构控制芯片的推力，控制器控制销的上升时间和下降时间，并且当销到达其峰值时保持预定的一段时间。

9. 发明授权

US08956917B2 Semiconductor device, and manufacturing method and manufacturing apparatus of the same 有权
标题翻译：半导体装置及其制造方法及制造装置
公开(公告)号：US08956917B2
公开(公告)日：2015-02-17
申请号：US13353826
申请日：2012-01-19
申请人： Tetsuya Kurosawa , Shinya Takyu , Akira Tomono
发明人： Tetsuya Kurosawa , Shinya Takyu , Akira Tomono
IPC分类号： H01L21/78 , H01L29/30 , H01L21/683
CPC分类号： H01L21/78 , H01L21/6836
摘要： According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The method includes: (a) forming cutting grooves in an element formation surface of a semiconductor wafer on which semiconductor elements are formed; (b) applying a protection tape on the element formation surface of the semiconductor wafer; (c) grinding a rear surface of the semiconductor wafer to thin the semiconductor wafer and to divide the semiconductor wafer into a plurality of semiconductor chips on which the semiconductor elements are formed; (d) forming an adhesive layer on the rear surface of the semiconductor wafer; (e) separating and cutting the adhesive layer for each of the semiconductor chips; and (f) removing the protection tape. The (e) is performed by spraying a high-pressure air to the adhesive layer formed on the rear surface of the semiconductor wafer while melting or softening the adhesive layer by heating.
摘要翻译：根据一个实施例，公开了一种半导体器件的制造方法。该方法包括：（a）在形成有半导体元件的半导体晶片的元件形成表面中形成切割槽; （b）在半导体晶片的元件形成表面上施加保护带; （c）研磨半导体晶片的后表面以使半导体晶片变薄，并将半导体晶片分成多个形成有半导体元件的半导体芯片; （d）在半导体晶片的后表面上形成粘合剂层; （e）分离和切割每个半导体芯片的粘合剂层; 和（f）去除保护胶带。（e）通过在通过加热熔化或软化粘合剂层的同时向形成在半导体晶片的后表面上的粘合剂层喷射高压空气来进行。

10. 发明申请

US20110163459A1 METHOD FOR MANUFACTURING A STACKED SEMICONDUCTOR PACKAGE, AND STACKED SEMICONDUCTOR PACKAGE 审中-公开
标题翻译：堆叠半导体封装和堆叠半导体封装的制造方法
公开(公告)号：US20110163459A1
公开(公告)日：2011-07-07
申请号：US13051179
申请日：2011-03-18
申请人： Junya Sagara , Shinya Takyu , Tetsuya Kurosawa
发明人： Junya Sagara , Shinya Takyu , Tetsuya Kurosawa
IPC分类号： H01L23/52
CPC分类号： H01L25/0657 , H01L21/6835 , H01L24/24 , H01L24/82 , H01L2221/6834 , H01L2224/24051 , H01L2224/24145 , H01L2224/24226 , H01L2224/24998 , H01L2224/32145 , H01L2224/32225 , H01L2224/73267 , H01L2224/76155 , H01L2224/82001 , H01L2224/82007 , H01L2224/82102 , H01L2225/06524 , H01L2225/06562 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01082 , H01L2924/10157 , H01L2924/10253 , H01L2924/19041 , H01L2924/30105 , H01L2924/00
摘要： A method for manufacturing a stacked semiconductor package where a plurality of semiconductor chips are stacked on a substrate, including: forming insulating layers at portions of a wafer corresponding to sides of the plurality of semiconductor chips when the plurality of semiconductor chips are in the wafer; processing the wafer so as to obtain the plurality of semiconductor chips; subsequently stacking the plurality of semiconductor chips on the substrate such that the insulating layers formed at the sides of the plurality of semiconductor chips are respectively positioned at the same side as one another; and forming a wiring over the insulating layers formed at the sides of the plurality of semiconductor chips so that the plurality of semiconductor chips are electrically connected with one another and one or more of the plurality of semiconductor chips are electrically connected with the substrate.
摘要翻译：一种叠层半导体封装的制造方法，其中多个半导体芯片堆叠在基板上，包括：当所述多个半导体芯片在所述晶片中时，在与所述多个半导体芯片的侧面对应的晶片的部分处形成绝缘层; 处理晶片以获得多个半导体芯片; 随后将多个半导体芯片堆叠在基板上，使得形成在多个半导体芯片的侧面的绝缘层分别位于彼此相同的一侧; 以及在形成在所述多个半导体芯片的侧面的绝缘层上形成布线，使得所述多个半导体芯片彼此电连接，并且所述多个半导体芯片中的一个或多个与所述基板电连接。

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