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1. 发明授权

US6071943A Imidazole derivative and medicine comprising the same as active ingredient 失效
标题翻译：咪唑衍生物和包含与活性成分相同的药物
公开(公告)号：US6071943A
公开(公告)日：2000-06-06
申请号：US200750
申请日：1998-11-30
申请人： Noriaki Shioiri , Tadashi Mikami , Shinichi Morimoto , Kazuo Yamazaki , Hiroyuki Naito , Junji Okawa , Noriyuki Kawamoto , Hiroshi Hasegawa , Koichi Tachibana , Susumu Sato , Toshio Yokoyama
发明人： Noriaki Shioiri , Tadashi Mikami , Shinichi Morimoto , Kazuo Yamazaki , Hiroyuki Naito , Junji Okawa , Noriyuki Kawamoto , Hiroshi Hasegawa , Koichi Tachibana , Susumu Sato , Toshio Yokoyama
IPC分类号： C07D233/54 , C07D233/64 , C07D233/70 , C07D405/12 , A01N43/50
CPC分类号： C07D233/64 , C07D405/12
摘要： Disclosed herein are an imidazole derivative represented by the following general formula (1): ##STR1## wherein R.sup.1 is a hydrogen atom, or an alkyl, alkoxy or alkoxycarbonyl group, and R.sup.2, R.sup.3 and R.sup.4 are the same or different from one another and are independently a hydrogen or halogen atom, an alkyl, halogenoalkyl, hydroxyl or alkoxy group, or the like, or a salt thereof, and a medicine comprising such a compound. The compound specifically suppresses the production of particular cytokine and is hence useful as an active ingredient for immune function modulators and the like.
摘要翻译：本文公开了由以下通式（1）表示的咪唑衍生物：其中R1是氢原子或烷基，烷氧基或烷氧基羰基，R2，R3和R4彼此相同或不同，独立地为氢或卤素原子，烷基，卤代烷基，羟基或烷氧基等，或其盐，以及包含这种化合物的药物。该化合物特别抑制特定细胞因子的产生，因此可用作免疫功能调节剂等的活性成分。

2. 发明授权

US6046218A Pyridine derivative and medicament containing the same as an effective ingredient 失效
标题翻译：吡啶衍生物和含有与有效成分相同的药物
公开(公告)号：US6046218A
公开(公告)日：2000-04-04
申请号：US952072
申请日：1997-11-17
申请人： Hiroshi Hasegawa , Tadashi Mikami , Koichi Tachibana , Kazuo Yamazaki , Noriyuki Kawamoto , Noriaki Shioiri , Koji Kusano , Susumu Sato , Hideaki Matsuda , Toshio Yokoyama
发明人： Hiroshi Hasegawa , Tadashi Mikami , Koichi Tachibana , Kazuo Yamazaki , Noriyuki Kawamoto , Noriaki Shioiri , Koji Kusano , Susumu Sato , Hideaki Matsuda , Toshio Yokoyama
IPC分类号： C07D213/69 , C07D405/06 , C07D409/06 , A61K31/435 , A61K31/44 , C07D211/72
CPC分类号： C07D213/69 , C07D405/06 , C07D409/06 , Y10S514/885
摘要： Described is a pyridine derivative represented by the following formula (1): ##STR1## wherein R.sup.1 and R.sup.2 individually represent H, an alkyl group, a cycloalkyl group, a hydroxyalkyl group, an alkoxyalkyl group which may have a substituent, a carboxyalkyl group, an alkoxycarbonylalkyl group, an aralkyl group which may have a substituent, a phenacyl group or an acyl group, R.sup.3 represents an alkyl group, a phenyl group which may have a substituent, a heteroaryl group or a cyclic amino group, X represents O or combination of OH and H, or a salt thereof; and a medicament, such as cytokine production suppressant, comprising the derivative or salt thereof as an effective ingredient. The invention compound has potential, highly specific and highly safe immunoregulating capacity so that it can suppress the excessive production of a specific cytokine in various diseases related to the immune system.
摘要翻译： PCT No.PCT / JP97 / 00712 Sec。 371日期：1997年11月17日 102（e）日期1997年11月17日PCT 1997年3月7日PCT公布。出版物WO97 / 33870 PCT 日期：1997年9月18日是由下式（1）表示的吡啶衍生物：其中R1和R2分别表示H，烷基，环烷基，羟烷基，可具有取代基的烷氧基烷基，羧基烷基烷氧基羰基烷基，可具有取代基的芳烷基，苯甲酰甲酰基或酰基，R3表示烷基，可具有取代基的苯基，杂芳基或环状氨基，X表示O 或OH和H的组合或其盐; 以及包含其衍生物或其盐作为有效成分的药物，例如细胞因子产生抑制剂。本发明化合物具有潜在的，高度特异性和高度安全的免疫调节能力，从而可以抑制与免疫系统相关的各种疾病中特定细胞因子的过量产生。

3. 发明授权

US5922767A Substituted benzylurea derivatives and medicine containing the same 失效
标题翻译：取代的苄基脲衍生物和含有它们的药物
公开(公告)号：US5922767A
公开(公告)日：1999-07-13
申请号：US946098
申请日：1997-10-07
申请人： Yoshihiko Kanamaru , Hiroyuki Hirota , Akihiro Shibata , Teruo Komoto , Hiroyuki Naito , Koichi Tachibana , Mari Ohtsuka , Fumio Ishii , Susumu Sato
发明人： Yoshihiko Kanamaru , Hiroyuki Hirota , Akihiro Shibata , Teruo Komoto , Hiroyuki Naito , Koichi Tachibana , Mari Ohtsuka , Fumio Ishii , Susumu Sato
IPC分类号： C07C275/28 , C07D213/30 , C07D307/42 , C07D333/16 , A61K31/17 , C07C275/06
CPC分类号： C07D213/30 , C07C275/28 , C07D307/42 , C07D333/16
摘要： Disclosed herein are substituted benzylurea derivatives represented by the following general formula (1): ##STR1## wherein R.sup.1 and R.sup.2 are independently H, a halogen atom, or an alkyl or alkoxyl group, R.sup.3 is a phenyl or heterocyclic group which may be substituted, n is an integer of 1-6, and R.sup.4 is a phenyl group which may be substituted, or salts thereof, and medicines comprising such a derivative as an active ingredient. The derivatives or salts thereof strongly inhibit only ACAT in macrophages and are hence useful as prophylactic and therapeutic agents for arteriosclerosis.
摘要翻译：本文公开了由以下通式（1）表示的取代的苄基脲衍生物：其中R 1和R 2独立地为H，卤素原子或烷基或烷氧基，R 3为可被取代的苯基或杂环基，n为 1-6的整数，R4是可被取代的苯基或其盐，以及包含这种衍生物作为活性成分的药物。其衍生物或盐在巨噬细胞中仅强烈地抑制ACAT，因此可用作动脉硬化的预防和治疗剂。

4. 发明授权

US5866609A Substituted vinylurea derivatives and medicine containing the same 失效
标题翻译：取代的乙烯基脲衍生物和含有其的药物
公开(公告)号：US5866609A
公开(公告)日：1999-02-02
申请号：US899647
申请日：1997-07-24
申请人： Yoshihiko Kanamaru , Hiroyuki Hirota , Akihiro Shibata , Teruo Komoto , Hiroyuki Naito , Koichi Tachibana , Mari Ohtsuka , Fumio Ishii , Susumu Sato
发明人： Yoshihiko Kanamaru , Hiroyuki Hirota , Akihiro Shibata , Teruo Komoto , Hiroyuki Naito , Koichi Tachibana , Mari Ohtsuka , Fumio Ishii , Susumu Sato
IPC分类号： C07C275/28 , C07C275/30 , C07C275/34 , C07C275/40 , C07C275/42 , C07C317/42 , C07C323/44 , C07D211/58 , C07D317/58 , C07D317/66 , A61K31/17 , C07C275/04
CPC分类号： C07C317/42 , C07C275/28 , C07C275/30 , C07C275/34 , C07C275/40 , C07C275/42 , C07C323/44 , C07D211/58 , C07D317/58 , C07D317/66 , C07C2101/14
摘要： Disclosed herein are substituted vinylurea derivatives represented by the following general formula (1): ##STR1## wherein R.sup.1 and R.sup.3 are independently a phenyl group which may be substituted, R.sup.2 is a phenyl group which may be substituted, or a cycloalkyl group, and wave lines mean that the bonding state may be either E or Z, with the proviso that the cases where R.sup.1, R.sup.2 and R.sup.3 are unsubstituted phenyl groups, and where R.sup.1 and R.sup.2 are unsubstituted phenyl groups and R.sup.3 is a 4-ethoxyphenyl group are excluded, or salt thereof, and medicines comprising such a derivative as an active ingredient as well as a method of preventing and treating arteriosclerosis with such a medicine. The derivatives or salts thereof selectively and strongly inhibit ACAT in macrophages and are hence useful as prophylactic and therapeutic agents for arteriosclerosis.
摘要翻译：本文公开了由以下通式（1）表示的取代的乙烯基脲衍生物：其中R 1和R 3独立地为可被取代的苯基，R 2为可被取代的苯基或环烷基并且波线意味着键合状态可以是E或Z，条件是其中R1，R2和R3是未取代的苯基，R1和R2是未取代的苯基，R3是4-乙氧基苯基的情况或其盐，以及包含这样的衍生物作为活性成分的药物，以及用这种药物预防和治疗动脉硬化的方法。其衍生物或其盐在巨噬细胞中选择性且强烈地抑制ACAT，因此可用作动脉硬化的预防和治疗剂。

5. 发明授权

US06737434B2 Imidazole derivatives or their salts 失效
标题翻译：咪唑衍生物或其盐
公开(公告)号：US06737434B2
公开(公告)日：2004-05-18
申请号：US10380828
申请日：2003-03-19
申请人： Minoru Tokizawa , Sunao Takeda , Yasushi Kaneko , Koji Kusano , Hiromichi Eto , Koichi Tachibana , Susumu Sato , Tadayoshi Taniyama
发明人： Minoru Tokizawa , Sunao Takeda , Yasushi Kaneko , Koji Kusano , Hiromichi Eto , Koichi Tachibana , Susumu Sato , Tadayoshi Taniyama
IPC分类号： C07D23360
CPC分类号： C07D233/64 , C07D231/12 , C07D233/56 , C07D249/08
摘要： Imidazole derivatives of the formula (1) or salts thereof, pharmaceuticals containing the derivatives or the salts, and intermediates for the synthesis of the derivatives or the salts (wherein R1 is lower alkyl; R2 is alkyl or aralkyl; and X1 is halogeno). These compounds exhibit G-CSF-like activities and can be substituted for G-CSF preparations.
摘要翻译：式（1）的咪唑衍生物或其盐，含有衍生物或盐的药物，以及用于合成衍生物或盐的中间体（其中R 1为低级烷基; R 2为烷基或芳烷基; X 1为卤素）。这些化合物表现出G-CSF样活性，可代替G-CSF制剂。

6. 发明授权

US08525195B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08525195B2
公开(公告)日：2013-09-03
申请号：US12873662
申请日：2010-09-01
申请人： Hajime Nago , Koichi Tachibana , Toshiki Hikosaka , Shigeya Kimura , Shinya Nunoue
发明人： Hajime Nago , Koichi Tachibana , Toshiki Hikosaka , Shigeya Kimura , Shinya Nunoue
IPC分类号： H01L33/02
CPC分类号： H01L33/12 , B82Y20/00 , H01L33/04 , H01L33/32 , H01S5/34333
摘要： According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers, a light emitting portion, a multilayered structural body, and an n-side intermediate layer. The light emitting portion is provided between the semiconductor layers. The light emitting portion includes barrier layers containing GaN, and a well layer provided between the barrier layers. The well layer contains Inx1Ga1-x1N. The body is provided between the n-type semiconductor layer and the light emitting portion. The body includes: first layers containing GaN, and a second layer provided between the first layers. The second layer contains Inx2Ga1-x2N. Second In composition ratio x2 is not less than 0.6 times of first In composition ratio x1 and is lower than the first In composition x1. The intermediate layer is provided between the body and the light emitting portion and includes a third layer containing Aly1Ga1-y1N (0
摘要翻译：根据一个实施例，半导体发光器件包括n型和p型半导体层，发光部分，多层结构体和n侧中间层。发光部分设置在半导体层之间。发光部分包括含有GaN的阻挡层，以及设置在阻挡层之间的阱层。阱层包含Inx1Ga1-x1N。本体设置在n型半导体层和发光部之间。主体包括：包含GaN的第一层，以及设置在第一层之间的第二层。第二层包含Inx2Ga1-x2N。第二组成比x2不小于第一In组成比x1的0.6倍，并且低于第一In组成x1。中间层设置在主体和发光部分之间，并且包括含有Aly1Ga1-y1N（0

7. 发明申请

US20120056220A1 SEMICONDUCTOR LIGHT EMMITING DEVICE 失效
标题翻译：半导体照明装置
公开(公告)号：US20120056220A1
公开(公告)日：2012-03-08
申请号：US13226045
申请日：2011-09-06
申请人： Taisuke SATO , Masanobu Ando , Hajime Nago , Koichi Tachibana , Toshiyuki Oka , Shinya Nunoue
发明人： Taisuke SATO , Masanobu Ando , Hajime Nago , Koichi Tachibana , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/60
CPC分类号： H01L33/007 , H01L33/46
摘要： According to one embodiment, in a light emitting device, a substrate is transparent to a wavelength of emitted light. A first dielectric layer is formed in a first region on the substrate, and has a refractive index smaller than a refractive index of the substrate. A second dielectric layer is formed in a second region on the substrate surrounding the first region, and has a refractive index larger than the refractive index of the substrate. A first semiconductor layer is formed on the first dielectric layer, the second dielectric layer and the substrate. A second semiconductor layer is formed on the first semiconductor layer, and includes an active layer having a PN junction.
摘要翻译：根据一个实施例，在发光器件中，衬底对于发射波长的波长是透明的。第一电介质层形成在基板上的第一区域中，并且折射率小于基板的折射率。在包围第一区域的基板上的第二区域中形成第二电介质层，并且折射率大于基板的折射率。在第一电介质层，第二电介质层和衬底上形成第一半导体层。第二半导体层形成在第一半导体层上，并且包括具有PN结的有源层。

8. 发明申请

US20120032209A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20120032209A1
公开(公告)日：2012-02-09
申请号：US13032934
申请日：2011-02-23
申请人： Tomonari SHIODA , Toshiki Hikosaka , Yoshiyuki Harada , Koichi Tachibana , Shinya Nunoue
发明人： Tomonari SHIODA , Toshiki Hikosaka , Yoshiyuki Harada , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L33/32
CPC分类号： H01L33/06 , H01L21/02378 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/02579 , H01L21/0262 , H01L33/007 , H01L33/04 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes: semiconductor layers; a multilayered structural body; and a light emitting portion. The multilayered structural body is provided between the semiconductor layers, and includes a first layer and a second layer including In. The light emitting portion is in contact with the multilayered structural body between the multilayered structural body and p-type semiconductor layer, and includes barrier layers and a well layer including In with an In composition ratio among group III elements higher than an In composition ratio among group III elements in the second layer. An average lattice constant of the multilayered structural body is larger than that of the n-type semiconductor layer. Difference between the average lattice constant of the multilayered structural body and that of the light emitting portion is less than difference between that of the multilayered structural body and that of the n-type semiconductor layer.
摘要翻译：根据一个实施例，半导体发光器件包括：半导体层; 多层结构体; 和发光部分。多层结构体设置在半导体层之间，并且包括第一层和包括In的第二层。发光部分与多层结构体和p型半导体层之间的多层结构体接触，并且包括阻挡层和包括In的阱层，III族元素中的In组成比高于In组成比中的In组成比第三组元素在第二层。多层结构体的平均晶格常数大于n型半导体层的平均晶格常数。多层结构体的平均晶格常数与发光部的平均晶格常数之差小于多层结构体与n型半导体层的平均晶格常数之差。

9. 发明申请

US20120012814A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120012814A1
公开(公告)日：2012-01-19
申请号：US13035304
申请日：2011-02-25
申请人： Yoshiyuki HARADA , Toshiki Hikosaka , Tomonari Shioda , Koichi Tachibana , Hajime Nago , Shinya Nunoue
发明人： Yoshiyuki HARADA , Toshiki Hikosaka , Tomonari Shioda , Koichi Tachibana , Hajime Nago , Shinya Nunoue
IPC分类号： H01L33/06 , H01L33/08
CPC分类号： H01L33/08 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/06
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part provided therebetween. The light emitting part includes a plurality of light emitting layers. Each of the light emitting layers includes a well layer region and a non-well layer region which is juxtaposed with the well layer region in a plane perpendicular to a first direction from the n-type semiconductor layer towards the p-type semiconductor layer. Each of the well layer regions has a common An In composition ratio. Each of the well layer regions includes a portion having a width in a direction perpendicular to the first direction of 50 nanometers or more.
摘要翻译：根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和设置在其间的发光部分。发光部分包括多个发光层。每个发光层包括在垂直于从n型半导体层朝向p型半导体层的第一方向的平面中与阱层区域并置的阱层区域和非阱层区域。每个阱层区域具有常见的An In组成比。每个阱层区域包括在垂直于第一方向的方向上具有50纳米或更大的宽度的部分。

10. 发明申请

US20110215291A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 失效
标题翻译：半导体发光器件
公开(公告)号：US20110215291A1
公开(公告)日：2011-09-08
申请号：US12873586
申请日：2010-09-01
申请人： Toshihide Ito , Koichi Tachibana , Shinya Nunoue
发明人： Toshihide Ito , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L31/0256 , H01L31/0352
CPC分类号： H01L31/022466 , B82Y20/00 , H01L31/035236 , H01L33/42
摘要： According to one embodiment, a semiconductor light-emitting device using an ITON layer for a transparent conductor and realizing low drive voltage, high luminance efficiency, and uniformed light emission intensity distribution is provided. The semiconductor light-emitting device includes: a substrate; an n-type semiconductor layer formed on the substrate; an active layer formed on the n-type semiconductor layer; a p-type semiconductor layer formed on the active layer and whose uppermost part is a p-type GaN layer; an ITON (Indium Tin Oxynitride) layer formed on the p-type GaN layer; an ITO (Indium Tin Oxide) layer formed on the ITON layer; a first metal electrode formed on a part on the ITO layer; and a second metal electrode formed in contact with the n-type semiconductor layer.
摘要翻译：根据一个实施例，提供了一种使用用于透明导体的ITON层并实现低驱动电压，高亮度效率和均匀的发光强度分布的半导体发光器件。半导体发光器件包括：衬底; 在该基板上形成的n型半导体层; 形成在所述n型半导体层上的有源层; 在有源层上形成的p型半导体层，其最上部是p型GaN层; 形成在p型GaN层上的ITON（铟锡氧氮化物）层; 形成在ITON层上的ITO（氧化铟锡）层; 形成在所述ITO层的一部分上的第一金属电极; 以及形成为与n型半导体层接触的第二金属电极。

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