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1. 发明申请

US20110297982A1 Optoelectronic Semiconductor Chip 审中-公开
标题翻译：光电半导体芯片
公开(公告)号：US20110297982A1
公开(公告)日：2011-12-08
申请号：US13061514
申请日：2009-07-23
申请人： Norbert Linder , Ralph Wirth , Christopher Wiesmann , Ross Stanley , Romuald Houdre
发明人： Norbert Linder , Ralph Wirth , Christopher Wiesmann , Ross Stanley , Romuald Houdre
IPC分类号： H01L33/60
CPC分类号： H01L33/22 , H01L33/405 , H01L33/46
摘要： A semiconductor chip is specified, comprising an active layer provided for emitting an electromagnetic radiation, and a two-dimensional arrangement of structural units, which is disposed downstream of the active layer in a main emission direction of the semiconductor chip. The structural units are arranged in an arbitrary statistical distribution. Such an arrangement of structural units makes it possible to realize a semiconductor chip having a directional emission characteristic.
摘要翻译：规定了半导体芯片，其包括设置用于发射电磁辐射的有源层和在半导体芯片的主发射方向上设置在有源层下游的结构单元的二维排列。结构单元布置在任意统计分布中。这种结构单元的布置使得可以实现具有定向发射特性的半导体芯片。

2. 发明授权

US06661033B2 LED with a coupling-out structure 失效
公开(公告)号：US06661033B2
公开(公告)日：2003-12-09
申请号：US10331924
申请日：2002-12-30
申请人： Norbert Linder , Ralph Wirth , Heribert Zull
发明人： Norbert Linder , Ralph Wirth , Heribert Zull
IPC分类号： H01L3300
CPC分类号： H01L33/38 , H01L33/14 , H01L33/20
摘要： On an upper side there is a structured output coupling layer with flanks which are aligned at an angle between 60° and 88° with respect to a layer plane and which form boundaries for output coupling areas provided for the emergence of radiation and offset from one another. The output coupling areas are formed as flat truncated cones and can be rippled or zigzagged at the flanks, in order to increase the probability that the radiation produced strikes an outer interface of the output coupling layer more steeply than at a limiting angle of total reflection.

3. 发明授权

US08354682B2 Radiation emitting element 有权
标题翻译：辐射发射元件
公开(公告)号：US08354682B2
公开(公告)日：2013-01-15
申请号：US11891783
申请日：2007-08-13
申请人： Franz Eberhard , Stefan Grötsch , Norbert Linder , Jürgen Moosburger , Klaus Streubel , Ralph Wirth , Matthias Sabathil , Julius Muschaweck , Krister Bergenek
发明人： Franz Eberhard , Stefan Grötsch , Norbert Linder , Jürgen Moosburger , Klaus Streubel , Ralph Wirth , Matthias Sabathil , Julius Muschaweck , Krister Bergenek
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , G02F1/13362 , H01L33/46 , H01L33/58
摘要： A radiation-emitting component (10) having a layer stack (1) which is based on a semiconductor material and which has an active layer sequence (4) for generating electromagnetic radiation, and a filter element (2) which is arranged after the active layer sequence (4) in the irradiation direction (A) and by means of which a first radiation component is transmitted, and a second radiation component is reflected into the layer stack (1), wherein the second radiation component is subjected to a deflection process or an absorption and emission process, and the deflected or emitted radiation impinges on the filter element (2).
摘要翻译：一种具有基于半导体材料并具有用于产生电磁辐射的有源层序列（4）的层堆叠（1）的辐射发射部件（10），以及布置在所述有源层之后的过滤元件（2）（A）中的第一辐射分量，并且第二辐射分量被反射到层叠体（1）中，其中第二辐射分量经受偏转过程或吸收和发射过程，并且偏转或发射的辐射撞击在过滤元件（2）上。

4. 发明申请

US20080035944A1 Radiation emitting element 有权
标题翻译：辐射发射元件
公开(公告)号：US20080035944A1
公开(公告)日：2008-02-14
申请号：US11891783
申请日：2007-08-13
申请人： Franz Eberhard , Stefan Grotsch , Norbert Linder , Jurgen Moosburger , Klaus Streubel , Ralph Wirth , Matthias Sabathil , Julius Muschaweck , Krister Bergenek
发明人： Franz Eberhard , Stefan Grotsch , Norbert Linder , Jurgen Moosburger , Klaus Streubel , Ralph Wirth , Matthias Sabathil , Julius Muschaweck , Krister Bergenek
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , G02F1/13362 , H01L33/46 , H01L33/58
摘要： A radiation-emitting component (10) having a layer stack (1) which is based on a semiconductor material and which has an active layer sequence (4) for generating electromagnetic radiation, and a filter element (2) which is arranged after the active layer sequence (4) in the irradiation direction (A) and by means of which a first radiation component is transmitted, and a second radiation component is reflected into the layer stack (1), wherein the second radiation component is subjected to a deflection process or an absorption and emission process, and the deflected or emitted radiation impinges on the filter element (2).
摘要翻译：一种具有基于半导体材料并具有用于产生电磁辐射的有源层序列（4）的层堆叠（1）的辐射发射部件（10），以及布置在所述有源层之后的过滤元件（2）（A）中的第一辐射分量，并且第二辐射分量被反射到层叠体（1）中，其中第二辐射分量经受偏转过程或吸收和发射过程，并且偏转或发射的辐射撞击在过滤元件（2）上。

5. 发明授权

US09488344B2 Method for producing a lighting device and lighting device 有权
标题翻译：照明装置及照明装置的制造方法
公开(公告)号：US09488344B2
公开(公告)日：2016-11-08
申请号：US14125356
申请日：2012-06-12
申请人： Joerg Sorg , Ralph Wirth
发明人： Joerg Sorg , Ralph Wirth
IPC分类号： F21S4/00 , F21V21/00 , F21V19/00 , F21K99/00 , H01L25/075 , F21Y101/02 , F21Y105/00
CPC分类号： F21V19/0015 , F21K9/20 , F21K9/90 , F21Y2101/00 , F21Y2105/10 , F21Y2115/10 , F21Y2115/30 , H01L25/0753 , H01L2224/48091 , Y10T29/4913 , H01L2924/00014
摘要： A method for producing a lighting device may include: providing a first mount, fastening a second mount to the first mount, at least partially severing the second mount into at least two parts after fastening of the second mount to the first mount, and fastening at least two luminescence diode chips to that side of the second mount which is remote from the first mount.
摘要翻译：一种用于制造照明装置的方法可以包括：提供第一安装件，将第二安装件紧固到第一安装件，在将第二安装件紧固到第一安装件之后，将第二安装件至少部分地切割成至少两个部分，并且紧固在至少两个发光二极管芯片到第二安装座的远离第一安装座的那侧。

6. 发明授权

US08624289B2 Optoelectronic component 有权
标题翻译：光电元件
公开(公告)号：US08624289B2
公开(公告)日：2014-01-07
申请号：US12680637
申请日：2008-09-10
申请人： Ralph Wirth
发明人： Ralph Wirth
IPC分类号： H01L27/15
CPC分类号： H01L33/507 , H01L33/505 , H01L33/54 , H01L33/56
摘要： An optoelectronic component comprising the following features is disclosed, at least one semiconductor body (1) provided for emitting electromagnetic radiation of a first wavelength range, an inner radiation-permeable shaped body (2), into which the semiconductor body (1) is embedded, a wavelength-converting layer (6) on an outer side (5) of the inner shaped body (2), said layer comprising a wavelength conversion substance (8) suitable for converting radiation of the first wavelength range into radiation of a second wavelength range, which is different from the first wavelength range, a coupling-out lens (10), into which the inner shaped body (2) and the wavelength-converting layer (6) are embedded, wherein the coupling-out lens (10) has an inner side enclosed by an inner hemisphere area having a radius Rconversion, and an outer side enclosing an outer hemisphere area having a radius Router, and the radii Rconverstion and Router meet the Weierstrass condition: Router≧Rconversion*nlens/nair, where nlens is the refractive index of the coupling-out lens and nair is the refractive index of the surroundings of the coupling-out lens.
摘要翻译：公开了一种包括以下特征的光电子部件：设置用于发射第一波长范围的电磁辐射的至少一个半导体本体（1），嵌入半导体本体（1）的内辐射透射成形体（2），所述内部成形体（2）的外侧（5）上的波长转换层（6），所述层包括适于将第一波长范围的辐射转换成第二波长的辐射的波长转换物质（8）与第一波长范围不同的范围，内置成形体（2）和波长转换层（6）嵌入其中的耦合透镜（10），其中，耦合透镜（10）具有由具有半径R转换的内半球区域封闭的内侧和封闭具有半径路由器的外半球区域的外侧，并且半径Rconverstion和路由器满足Weierstrass条件：Router> = Rconversion * nlens / nair，其中nlens是耦合透镜的折射率，nair是耦合透镜的周围的折射率。

7. 发明授权

US08501513B2 Optoelectronic semiconductor component with current spreading layer 有权
标题翻译：具有电流扩散层的光电半导体元件
公开(公告)号：US08501513B2
公开(公告)日：2013-08-06
申请号：US11992706
申请日：2006-09-14
申请人： Magnus Ahlstedt , Dieter Eissler , Robert Walter , Ralph Wirth
发明人： Magnus Ahlstedt , Dieter Eissler , Robert Walter , Ralph Wirth
IPC分类号： H01L33/00
CPC分类号： H01L31/022466 , H01L31/103 , H01L31/1884 , H01L33/0095 , H01L33/42 , H01L2224/48463 , H01S5/0421 , Y02E10/50
摘要： An optoelectronic semiconductor component comprising a semiconductor body (10) and a current spreading layer (3) is specified. The current spreading layer (3) is applied to the semiconductor body (10) at least in places. In this case, the current spreading layer (3) contains a metal (1) that forms a transparent electrically conductive metal oxide (2) in the current spreading layer, and the concentration (x) of the metal (1) decreases from that side of the current spreading layer (3) which faces the semiconductor body (10) toward that side of said current spreading layer which is remote from the semiconductor body (10). A method for producing such a semiconductor component is also disclosed.
摘要翻译：规定了包括半导体本体（10）和电流扩展层（3）的光电半导体部件。至少在某个地方将电流扩展层（3）施加到半导体本体（10）。在这种情况下，电流扩散层（3）包含在电流扩散层中形成透明导电金属氧化物（2）的金属（1），并且金属（1）的浓度（x）从该侧减小（10）面向半导体本体（10）的电流扩展层（3）的电流扩散层（3）的电流扩展层（5）。还公开了一种用于制造这种半导体部件的方法。

8. 发明申请

US20120235176A1 Optoelectronic Module Comprising at Least One First Semiconductor Body Having a Radiation Outlet Side and an Insulation Layer and Method for the Production Thereof 有权
标题翻译：具有辐射出口侧和绝缘层的至少一个第一半导体器件的光电模块及其制造方法
公开(公告)号：US20120235176A1
公开(公告)日：2012-09-20
申请号：US13394097
申请日：2010-08-06
申请人： Karl Weidner , Ralph Wirth , Axel Kaltenbacher , Walter Wegleiter , Bernd Barchmann , Oliver Wutz , Jan Marfeld
发明人： Karl Weidner , Ralph Wirth , Axel Kaltenbacher , Walter Wegleiter , Bernd Barchmann , Oliver Wutz , Jan Marfeld
IPC分类号： H01L27/15 , H01L33/52
CPC分类号： H01L33/44 , H01L24/24 , H01L25/0753 , H01L33/50 , H01L33/62 , H01L2224/73267 , H01L2224/76155 , H01L2224/82102 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： An optoelectronic module is provided which comprises a first semiconductor body (2) with a radiation exit side (2a) on which an electrical connection region (21, 22) is arranged. The first semiconductor body (2) is arranged with its side opposite the radiation exit side (2a) on a carrier (1). An insulation material (3) is arranged on the carrier (1) laterally next to the first semiconductor body (2), which material forms a fillet and adjoins the semiconductor body (2) form-fittingly. An insulation layer (4) is arranged at least in places on the first semiconductor body (2) and the insulation material (3), on which layer a planar conductive structure is arranged for planar contacting of the first semiconductor body (2), which conductive structure is electrically conductively connected with the electrical connection region (21, 22). A method of producing such an optoelectronic module is furthermore provided.
摘要翻译：提供了一种光电模块，其包括具有辐射出射侧（2a）的第一半导体本体（2），电连接区域（21,22）布置在其上。第一半导体本体（2）的一侧与辐射出口侧（2a）相对设置在载体（1）上。绝缘材料（3）在第一半导体本体（2）的横向方向上布置在载体（1）上，该材料形成一个圆角并且与半导体本体（2）形成适当的连接。绝缘层（4）至少布置在第一半导体本体（2）和绝缘材料（3）上的位置上，其上布置有用于第一半导体主体（2）的平面接触的平面导电结构的层，导电结构与电连接区域（21,22）导电连接。此外还提供了制造这种光电子模块的方法。

9. 发明申请

US20110309755A1 Optoelectronic Device 审中-公开
标题翻译：光电器件
公开(公告)号：US20110309755A1
公开(公告)日：2011-12-22
申请号：US13141079
申请日：2009-12-14
申请人： Ralph Wirth , Markus Klein
发明人： Ralph Wirth , Markus Klein
IPC分类号： H05B37/02
CPC分类号： H05B33/0869 , H05B33/0872
摘要： An optoelectronic device for emitting mixed light in a first and a different second wavelength range comprises a first or second semiconductor light source (1, 2) with a first or second light-emitting diode (11, 21), which emits light with a first or second characteristic wavelength in the first or second wavelength range and with a first or second intensity on application of a first or second current (41, 42), an optical sensor (3) for converting of a part (110, 510) of the light emitted in each case by the semiconductor light sources (1, 2) into a first or second sensor signal (341, 342), and a feedback controller (4) for feedback control of the first and second current (41, 42) as a function of the first and second sensor signal (341, 342), wherein the characteristic wavelengths and intensities of the light emitted in each case by the first and second semiconductor light sources (1, 2) exhibit a first or different second temperature and/or current and/or ageing dependency (931, 932, 941, 942), the optical sensor (3) exhibits a first or second wavelength-dependent sensitivity in the first or second wavelength range, which sensitivities are adapted to the first and second temperature dependencies (931, 932, 941, 942), and the feedback controller (4) controls the first and second currents (41, 42) in such a way that the first sensor signal (341) exhibits a given ratio to the second sensor signal (342).
摘要翻译：用于发射第一和第二波长范围的混合光的光电子器件包括具有第一或第二发光二极管（11,21）的第一或第二半导体光源（1,2），其发射具有第一和第二或第二特征波长在第一或第二波长范围内并且在施加第一或第二电流（41,42）时具有第一或第二强度，光学传感器（3）用于转换第一或第二波长的部分（110,510）通过半导体光源（1,2）在每种情况下发射的光分别成为第一或第二传感器信号（341,342），反馈控制器（4）用于将第一和第二电流（41,42）反馈控制为第一和第二传感器信号（341,342）的功能，其中由第一和第二半导体光源（1,2）在每种情况下发射的光的特征波长和强度呈现第一或不同的第二温度和/ 或当前和/或老化依赖关系（931,932， 941,942），光学传感器（3）在第一或第二波长范围内呈现第一或第二波长依赖灵敏度，其灵敏度适应于第一和第二温度依赖性（931,932,941,942），以及反馈控制器（4）以第一传感器信号（341）呈现与第二传感器信号（342）的给定比例的方式来控制第一和第二电流（41,42）。

10. 发明授权

US07692204B2 Radiation emitting semi-conductor element 有权
标题翻译：辐射发射半导体元件
公开(公告)号：US07692204B2
公开(公告)日：2010-04-06
申请号：US10567883
申请日：2004-07-30
申请人： Wilhelm Stein , Reiner Windisch , Ralph Wirth , Ines Pietzonka
发明人： Wilhelm Stein , Reiner Windisch , Ralph Wirth , Ines Pietzonka
IPC分类号： H01L29/08
CPC分类号： H01L33/40 , H01L33/02
摘要： A radiation-emitting semiconductor component with a semiconductor body, including a first principal surface (5), a second principal surface (9) and a semiconductor layer sequence (4) with an electromagnetic radiation generating active zone (7), in which the semiconductor layer sequence (4) is disposed between the first and the second principal surfaces (5, 9), a first current spreading layer (3) is disposed on the first principal surface (5) and electrically conductively connected to the semiconductor layer sequence (4), and a second current spreading layer (10) is disposed on the second principal surface (9) and electrically conductively connected to the semiconductor layer sequence (4).
摘要翻译：一种具有半导体主体的辐射发射半导体部件，包括第一主表面（5），第二主表面（9）和具有电磁辐射产生有源区（7）的半导体层序列（4），其中半导体层序列（4）设置在第一和第二主表面（5,9）之间，第一电流扩散层（3）设置在第一主表面（5）上并与半导体层序列（4）导电连接），并且第二电流扩展层（10）设置在第二主表面（9）上并与半导体层序列（4）导电连接。

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