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    • 9. 发明授权
    • Method for producing sintered silicon carbide
    • 烧结碳化硅的制造方法
    • US06214755B1
    • 2001-04-10
    • US09544464
    • 2000-04-07
    • Masashi OtsukiHiroaki WadaYoshitomo TakahashiTasuku Saito
    • Masashi OtsukiHiroaki WadaYoshitomo TakahashiTasuku Saito
    • C04B35569
    • C04B35/575
    • A sintered silicon carbide containing nitrogen is obtained by sintering a mixture of a powder of silicon carbide and a nonmetallic auxiliary sintering agent. The sintered silicon carbide has a density of 2.9 g/cm3 or more and contains 150 ppm or more of nitrogen. The sintered silicon carbide preferably has a volume resistivity of 1 &OHgr;·cm or less and contains &bgr;-silicon carbide in an amount of 70% or more of total silicon carbide components. Nitrogen can be introduced into the sintered silicon carbide by adding a nitrogen source, for example, an amine such as hexamethylenetetramine, ammonia, and triethylamine in the production of the powder of silicon carbide which is used as the material powder for producing the sintered silicon carbide or by adding the nitrogen source in combination with the nonmetallic auxiliary sintering agent in the production of the sintered silicon carbide. A high quality sintered silicon carbide having a high density, exhibiting both electric conductivity and high heat conductivity, which can be advantageously used in various fields such as semiconductor industry and electronic information processing instruments industry, is provided.
    • 通过烧结碳化硅粉末和非金属辅助烧结剂的混合物来获得含氮烧结碳化硅。 烧结碳化硅的密度为2.9g / cm 3以上,含有150ppm以上的氮。 烧结碳化硅的体积电阻率优选为1ΩEG·cm以下,并且含有总碳化硅成分的70%以上的β-碳化硅。 通过在制造碳化硅粉末中添加氮源(例如六亚甲基四胺,氨和三乙胺等胺),可以将氮气引入到烧结碳化硅中,所述碳化硅粉末用作制造烧结碳化硅的材料粉末 或者通过在制造烧结碳化硅时将氮源与非金属助烧结剂组合添加。 提供了一种具有高密度,高电导率和高导热性的高品质烧结碳化硅,其可有利地用于各种领域如半导体工业和电子信息处理仪器工业。