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    • 1. 发明申请
    • SEMICONDUCTOR DEVICE HAVING DIFFUSION LAYERS AS BIT LINES AND METHOD FOR MANUFACTURING THE SAME
    • 具有扩展层作为位线的半导体器件及其制造方法
    • US20090104765A1
    • 2009-04-23
    • US12337023
    • 2008-12-17
    • Nobuyoshi TAKAHASHIFumihiko NoroKenji Sato
    • Nobuyoshi TAKAHASHIFumihiko NoroKenji Sato
    • H01L21/768
    • H01L27/11568H01L27/115
    • A semiconductor device includes: a semiconductor region; a plurality of bit line diffusion layers formed in an upper portion of the semiconductor region and each extending in a row direction; a plurality of bit line insulating films formed on the bit line diffusion layers; a plurality of gate insulting films formed between the respective adjacent bit line diffusion layers on the semiconductor region; and a plurality of word lines each formed on the semiconductor region in a column direction and each intersecting with the bit line insulating films and the gate insulating films. Memory cells are formed at intersections of the gate insulating films and the word lines. A plurality of connection diffusion layers including connection parts electrically connected to the bit line diffusion layers are formed in the upper portion of the semiconductor region, and a level of upper faces of the connection parts is lower than a level of upper faces of the connection diffusion layers in the semiconductor region.
    • 半导体器件包括:半导体区域; 多个位线扩散层,其形成在所述半导体区域的上部,并且各自沿行方向延伸; 形成在位线扩散层上的多个位线绝缘膜; 形成在所述半导体区域上的各个相邻位线扩散层之间的多个栅极绝缘膜; 以及多个字线,各自在列方向上形成在半导体区域上,并且与字线绝缘膜和栅极绝缘膜交叉。 存储单元形成在栅极绝缘膜和字线的交点处。 包括与位线扩散层电连接的连接部分的多个连接扩散层形成在半导体区域的上部,并且连接部分的上表面的电平低于连接扩散部的上表面的高度 半导体区域中的层。
    • 2. 发明授权
    • Semiconductor device having diffusion layers as bit lines and method for manufacturing the same
    • 具有作为位线的扩散层的半导体器件及其制造方法
    • US07476943B2
    • 2009-01-13
    • US11405451
    • 2006-04-18
    • Nobuyoshi TakahashiFumihiko NoroKenji Sato
    • Nobuyoshi TakahashiFumihiko NoroKenji Sato
    • H01L29/76
    • H01L27/11568H01L27/115
    • A semiconductor device includes: a semiconductor region; a plurality of bit line diffusion layers formed in an upper portion of the semiconductor region and each extending in a row direction; a plurality of bit line insulating films formed on the bit line diffusion layers; a plurality of gate insulting films formed between the respective adjacent bit line diffusion layers on the semiconductor region; and a plurality of word lines each formed on the semiconductor region in a column direction and each intersecting with the bit line insulating films and the gate insulating films. Memory cells are formed at intersections of the gate insulating films and the word lines. A plurality of connection diffusion layers including connection parts electrically connected to the bit line diffusion layers are formed in the upper portion of the semiconductor region, and a level of upper faces of the connection parts is lower than a level of upper faces of the connection diffusion layers in the semiconductor region.
    • 半导体器件包括:半导体区域; 多个位线扩散层,其形成在所述半导体区域的上部,并且各自沿行方向延伸; 形成在位线扩散层上的多个位线绝缘膜; 形成在所述半导体区域上的各个相邻位线扩散层之间的多个栅极绝缘膜; 以及多个字线,各自在列方向上形成在半导体区域上,并且与字线绝缘膜和栅极绝缘膜交叉。 存储单元形成在栅极绝缘膜和字线的交点处。 包括与位线扩散层电连接的连接部分的多个连接扩散层形成在半导体区域的上部,并且连接部分的上表面的电平低于连接扩散部的上表面的高度 半导体区域中的层。
    • 3. 发明申请
    • Semiconductor device and method for manufacturing the same
    • 半导体装置及其制造方法
    • US20060237757A1
    • 2006-10-26
    • US11405451
    • 2006-04-18
    • Nobuyoshi TakahashiFumihiko NoroKenji Sato
    • Nobuyoshi TakahashiFumihiko NoroKenji Sato
    • H01L29/94
    • H01L27/11568H01L27/115
    • A semiconductor device includes: a semiconductor region; a plurality of bit line diffusion layers formed in an upper portion of the semiconductor region and each extending in a row direction; a plurality of bit line insulating films formed on the bit line diffusion layers; a plurality of gate insulting films formed between the respective adjacent bit line diffusion layers on the semiconductor region; and a plurality of word lines each formed on the semiconductor region in a column direction and each intersecting with the bit line insulating films and the gate insulating films. Memory cells are formed at intersections of the gate insulating films and the word lines. A plurality of connection diffusion layers including connection parts electrically connected to the bit line diffusion layers are formed in the upper portion of the semiconductor region, and a level of upper faces of the connection parts is lower than a level of upper faces of the connection diffusion layers in the semiconductor region.
    • 半导体器件包括:半导体区域; 多个位线扩散层,其形成在所述半导体区域的上部,并且各自沿行方向延伸; 形成在位线扩散层上的多个位线绝缘膜; 形成在所述半导体区域上的各个相邻位线扩散层之间的多个栅极绝缘膜; 以及多个字线,各自在列方向上形成在半导体区域上,并且与字线绝缘膜和栅极绝缘膜交叉。 存储单元形成在栅极绝缘膜和字线的交点处。 包括与位线扩散层电连接的连接部分的多个连接扩散层形成在半导体区域的上部,并且连接部分的上表面的电平低于连接扩散部的上表面的高度 半导体区域中的层。
    • 4. 发明授权
    • Semiconductor device having diffusion layers as bit lines and method for manufacturing the same
    • 具有作为位线的扩散层的半导体器件及其制造方法
    • US07704803B2
    • 2010-04-27
    • US12337023
    • 2008-12-17
    • Nobuyoshi TakahashiFumihiko NoroKenji Sato
    • Nobuyoshi TakahashiFumihiko NoroKenji Sato
    • H01L21/8246
    • H01L27/11568H01L27/115
    • A semiconductor device includes: a semiconductor region; a plurality of bit line diffusion layers formed in an upper portion of the semiconductor region and each extending in a row direction; a plurality of bit line insulating films formed on the bit line diffusion layers; a plurality of gate insulting films formed between the respective adjacent bit line diffusion layers on the semiconductor region; and a plurality of word lines each formed on the semiconductor region in a column direction and each intersecting with the bit line insulating films and the gate insulating films. Memory cells are formed at intersections of the gate insulating films and the word lines. A plurality of connection diffusion layers including connection parts electrically connected to the bit line diffusion layers are formed in the upper portion of the semiconductor region, and a level of upper faces of the connection parts is lower than a level of upper faces of the connection diffusion layers in the semiconductor region.
    • 半导体器件包括:半导体区域; 多个位线扩散层,其形成在所述半导体区域的上部,并且各自沿行方向延伸; 形成在位线扩散层上的多个位线绝缘膜; 形成在所述半导体区域上的各个相邻位线扩散层之间的多个栅极绝缘膜; 以及多个字线,各自在列方向上形成在半导体区域上,并且与字线绝缘膜和栅极绝缘膜交叉。 存储单元形成在栅极绝缘膜和字线的交点处。 包括与位线扩散层电连接的连接部分的多个连接扩散层形成在半导体区域的上部,并且连接部分的上表面的电平低于连接扩散部的上表面的高度 半导体区域中的层。
    • 5. 发明授权
    • Fuel cell and fuel cell stack
    • 燃料电池和燃料电池堆
    • US09343761B2
    • 2016-05-17
    • US13991598
    • 2011-12-05
    • Kenji Sato
    • Kenji Sato
    • H01M8/04H01M8/00H01M8/02H01M8/24H01M8/10
    • H01M8/04746H01M8/006H01M8/0232H01M8/0271H01M8/0273H01M8/2465H01M8/2483H01M2008/1095Y02E60/50
    • A fuel cell includes: a membrane electrode assembly having an electrolyte membrane, an anode disposed on one side of the electrolyte membrane, and a cathode disposed on the other side thereof; a porous passage that is disposed on at least one side of the membrane electrode assembly, and through which a fuel gas is supplied to the anode or an oxidant gas is supplied to the cathode; and a manifold portion-, through which the fuel gas or the oxidant gas is supplied to the porous passage, and that is provided so as to pass through the fuel cell in a stacking direction, in which the electrolyte membrane, the anode, the cathode, and the porous passage are stacked, wherein a manifold portion-side end portion of the porous passage has a gas inlet at least one of stacking surfaces of the porous passage that face in the stacking direction.
    • 燃料电池包括:具有电解质膜的膜电极组件,设置在电解质膜一侧的阳极和设置在其另一侧的阴极; 设置在所述膜电极组件的至少一侧的多孔通路,向所述阴极供给向阳极供给燃料气体或氧化剂气体的多孔通路, 以及歧管部分,燃料气体或氧化剂气体通过该歧管部分被供应到多孔通道,并且被设置成沿堆叠方向穿过燃料电池,其中电解质膜,阳极,阴极 并且多孔通道被堆叠,其中多孔通道的歧管部分侧端部具有气体入口,所述多孔通道的堆叠表面在层叠方向上面对的至少一个。
    • 7. 发明授权
    • Optical intensity determination unit, method of forming the same, and optical A/D converter
    • 光强度确定单元,其形成方法和光学A / D转换器
    • US09091593B2
    • 2015-07-28
    • US13816160
    • 2011-04-19
    • Kenji Sato
    • Kenji Sato
    • G02F1/035G01J1/04H04B10/079G02F7/00
    • G01J1/0459G02F7/00H04B10/07955
    • An optical intensity determination unit includes: an optical input port; an optical output port; an optical resonator provided between the optical input port and the optical output port; a first light receiving element for converting at least a part of an optical signal output from a first output port of the optical resonator into an electric signal; a second light receiving element for converting at least a part of an optical signal output from a second output port of the optical resonator into an electric signal; a comparing circuit for determining magnitudes of the electric signals output from the first light receiving element and the second light receiving element to output a digital signal; and an optical branching circuit for branching light output from the second output port of the optical resonator into the optical output port and the second light receiving element. An optical intensity phase conversion unit for modulating an optical phase according to intensity of input light is provided in a part of a waveguide in the optical resonator.
    • 光强决定单元包括:光输入端口; 光输出端口; 设置在光输入端口和光输出端口之间的光谐振器; 第一光接收元件,用于将从光谐振器的第一输出端口输出的光信号的至少一部分转换为电信号; 第二光接收元件,用于将从光谐振器的第二输出端口输出的光信号的至少一部分转换为电信号; 比较电路,用于确定从第一光接收元件和第二光接收元件输出的电信号的幅度以输出数字信号; 以及用于将从光谐振器的第二输出端口输出的光分支到光输出端口和第二光接收元件的光分支电路。 在光谐振器的波导的一部分中设置有用于根据输入光的强度来调制光学相位的光强度相位转换单元。