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1. 发明授权

US5096518A Method for encapsulating material to be processed by hot or warm isostatic pressing 失效
标题翻译：通过热或温度等压压制加工材料的方法
公开(公告)号：US5096518A
公开(公告)日：1992-03-17
申请号：US480764
申请日：1990-02-16
申请人： Takao Fujikawa , Kazuhiko Nakajima , Yasuo Manabe
发明人： Takao Fujikawa , Kazuhiko Nakajima , Yasuo Manabe
IPC分类号： B22F3/12 , B23K15/00 , B23K26/24 , B29C43/12 , B29C43/36 , B30B11/00
CPC分类号： B29C43/12 , B22F3/1258 , B23K15/0053 , B23K26/244 , B29C43/3642 , B30B11/001 , B29C2043/3647 , B29K2105/251 , B29K2905/02
摘要： Described herein is a method of encapsulating a material to be processed by warm or hot isostatic pressing, and an apparatus suitable for practicing the method, which basically includes the steps of (a) enveloping a processing material in the form of loose or compacted powder with a metal foil of 30 .mu.m in thickness, and (b) welding overlying and underlying metal foil portions to encapsulate said material in said metal foil in sealed state.
摘要翻译：这里描述的是通过温热或热等静压来封装待处理材料的方法，以及适用于实施该方法的装置，其基本上包括以下步骤：（a）将松散或压实粉末形式的处理材料包封，厚度为30μm的金属箔，和（b）焊接覆盖和下面的金属箔部分，以密封状态将所述材料封装在所述金属箔中。

2. 发明授权

US5147086A Preparation of capsule for use in isostatic pressing treatment 失效
标题翻译：用于静脉压治疗的胶囊的制备
公开(公告)号：US5147086A
公开(公告)日：1992-09-15
申请号：US683732
申请日：1991-04-11
申请人： Takao Fujikawa , Yasuo Manabe , Kazuhiko Nakajima
发明人： Takao Fujikawa , Yasuo Manabe , Kazuhiko Nakajima
IPC分类号： B23K11/06 , B22F3/04 , B22F3/12 , B22F3/14 , B22F3/15 , B23K9/00 , B23K11/00 , B29C43/36 , B29C65/02 , B29C65/18 , B30B11/00 , C04B35/645
CPC分类号： B30B11/001 , B22F3/1258 , B23K11/002 , B23K9/0026 , B29C43/3642
摘要： A process for preparation of capsule for use in isostatic pressing treatment, the process comprising a first step of enclosing a material to be treated, such as ceramic, metal, resin, etc. with metallic foil having a thickness of from 30 to 300 .mu.m, and a second step of welding the metallic foil so as to seal the material to be treated in the metallic foil thus welded, thereby preparing a capsule, wherein the welding is carried out by means of TIG welding. Alternatively, the welding may be carried out by means of seam resistance welding. It is posible, by the process, to seal the material to be treated in a capsule easily and economically. The capsule thus obtained is in a good sealed condition, permits effective isostatic pressing treatment, and enables the treated material to be taken out easily. A ceramic or metal layer covers the material to be treated to prevent adhesion between the material and the metallic foil.
摘要翻译：一种制备用于等压压制处理的胶囊的方法，该方法包括用金属箔包覆陶瓷，金属，树脂等被处理材料的第一步骤，其厚度为30-300μm 以及焊接金属箔以便将如此焊接的金属箔密封待处理材料的第二步骤，由此制备胶囊，其中通过TIG焊接进行焊接。或者，可以通过接缝电阻焊接进行焊接。通过该过程，可以容易且经济地将待处理的材料密封在胶囊中。由此得到的胶囊处于良好的密封状态，能够进行有效的等静压处理，能够容易地取出被处理材料。陶瓷或金属层覆盖待处理的材料以防止材料和金属箔之间的粘合。

3. 发明授权

US07008210B2 Hot isostatic pressing apparatus 有权
公开(公告)号：US07008210B2
公开(公告)日：2006-03-07
申请号：US10437061
申请日：2003-05-14
申请人： Yasuo Manabe , Shigeo Kofune , Makoto Yoneda , Takao Fujikawa
发明人： Yasuo Manabe , Shigeo Kofune , Makoto Yoneda , Takao Fujikawa
IPC分类号： B29C43/10 , B22F3/15
CPC分类号： F27B5/06 , B22F3/003 , B22F3/15 , B29K2105/251 , B29K2303/06 , B30B11/002 , F27B5/04 , F27B5/14 , F27B2005/162 , F27B2005/167 , F27D7/04 , F27D7/06 , F27D9/00 , F27D2009/0075 , Y10S425/815
摘要： A treatment chamber for heating and pressing workpieces and a heat insulating structure which covers the treatment chamber sideways and from above are provided within a high-pressure vessel. Below the treatment chamber are disposed a base heater for heating a pressure medium gas and a fan for supplying the pressure medium gas in a heated state into the treatment chamber and stirring the heated gas. The workpieces can be held on the heat insulating structure side, and the heat insulating structure and the workpieces can be taken out from the interior of the high-pressure vessel and can be conveyed together separately from a lower lid of the high-pressure vessel. A hot isostatic pressing apparatus is provided less expensively which can heat and press workpieces at a relatively low temperature of not higher than 600° C. Besides, it is possible to shorten the cycle time in HIP.

4. 发明授权

US06837086B2 Hot isostatic pressing method and apparatus 有权
标题翻译：热等静压法及装置
公开(公告)号：US06837086B2
公开(公告)日：2005-01-04
申请号：US10446671
申请日：2003-05-29
申请人： Yasuo Manabe , Shigeo Kofune , Makoto Yoneda , Takao Fujikawa
发明人： Yasuo Manabe , Shigeo Kofune , Makoto Yoneda , Takao Fujikawa
IPC分类号： B30B5/02 , B22F3/15 , C22F1/04 , C22F1/06 , F27B17/00 , B21D26/02
CPC分类号： B30B11/002 , C21D2241/02 , C22F1/04 , C22F1/06
摘要： While a workpiece is heated and pressed by one of a pair of high-pressure vessels, a workpiece being pressed by the other high-pressure vessel is placed in a heated state. In the reducing process after termination of heating and pressing treatment of the workpiece by one high-pressure vessel, both the high-pressure vessels are placed in communication, and the pressure medium gas released from one high-pressure vessel is poured into the other high-pressure vessel. After pressures of both the high-pressure vessels have assumed a nearly balanced state, the pressure medium gas is sucked out of one high-pressure vessel by a compressor and pressed, and is poured into the other high-pressure vessel, and the workpiece is heated and pressed by the other high-pressure vessel. By the method as described, considerable shortening of cycle time of HIP treatment is achieved, and the HIP treatment can be carried out with high efficiency.
摘要翻译：当工件被一对高压容器中的一个加热和加压时，由另一个高压容器压制的工件被置于加热状态。在通过一个高压容器对工件进行加热和加压处理终止之后的还原过程中，两个高压容器相互连通，将从一个高压容器释放的压力介质气体倒入另一个高压容器 -压力容器。在两个高压容器的压力都呈现接近平衡的状态之后，通过压缩机将压力介质气体从一个高压容器中吸出并被压制，并且被倒入另一个高压容器中，并且工件是被另一个高压容器加热和压制。通过所述方法，实现了HIP处理循环时间的缩短，HIP处理能够高效率地进行。

5. 发明授权

US5187125A Sintered body of calcium carbonate and process for producing same 失效
标题翻译：碳酸钙烧结体及其制造方法
公开(公告)号：US5187125A
公开(公告)日：1993-02-16
申请号：US766263
申请日：1991-09-27
申请人： Nobuo Someya , Tadao Kitazato , Takao Fujikawa , Yasuo Manabe
发明人： Nobuo Someya , Tadao Kitazato , Takao Fujikawa , Yasuo Manabe
IPC分类号： C04B35/622 , C04B35/00 , C04B35/03 , C04B35/645 , C04B38/00
CPC分类号： C04B35/6455 , C04B35/03
摘要： The invention relates to a process for producing a sintered body of calcium carbonate without permitting thermal decomposition of calcium carbonate during sintering, and to the sintered body. A powder material primarily comprising calcium carbonate is subjected to a cold powder pressing process to prepare a green compact, which is then heated in a high-pressure gas atmosphere consisting essentially of an inert gas at a temperature t.degree. C. of900.ltoreq.t
摘要翻译：本发明涉及一种碳酸钙烧结体的制造方法，其不使碳酸钙在烧结时发生热分解，而且涉及烧结体。主要包含碳酸钙的粉末材料进行冷粉压制，制备生坯，然后在基本上由惰性气体组成的高压气体气氛中加热，温度t℃为900℃， t <1200，高气压Pkgf / cm2的

6. 发明授权

US06790774B2 Method of forming a wiring film by applying high temperature/high pressure 失效
标题翻译：通过施加高温/高压形成布线膜的方法
公开(公告)号：US06790774B2
公开(公告)日：2004-09-14
申请号：US10314990
申请日：2002-12-10
申请人： Takao Fujikawa , Makoto Kadoguchi , Kohei Suzuki , Takuya Masui
发明人： Takao Fujikawa , Makoto Kadoguchi , Kohei Suzuki , Takuya Masui
IPC分类号： H01L2144
CPC分类号： H01L21/2855 , H01L21/76882 , H01L21/76886
摘要： A wiring film, which can be formed into wiring for ULSI semiconductor circuits, is formed by first forming holes in an insulating film on a substrate; then depositing a metallic material of copper, copper alloy, silver or silver alloy into the holes under an atmosphere including hydrogen; and finally annealing the deposited metallic material. The metallic material can be deposited by a sputtering process in which the atmosphere includes an inert gas in addition to the hydrogen. Hydrogen doped in the metallic material during the sputtering process promotes diffusion of atoms in the metallic material. The diffusion eliminates voids in the deposited metallic material.
摘要翻译：可以形成为ULSI半导体电路的布线的布线膜通过在基板上的绝缘膜中首先形成孔而形成; 然后在包含氢气的气氛下将铜，铜合金，银或银合金的金属材料沉积到孔中; 最后退火沉积的金属材料。金属材料可以通过溅射工艺沉积，其中除了氢气之外，气氛中还包括惰性气体。在溅射过程中在金属材料中掺杂的氢促进金属材料中原子的扩散。扩散消除沉积的金属材料中的空隙。

7. 发明授权

US06328560B1 Pressure processing apparatus for semiconductors 失效
标题翻译：半导体压力加工设备
公开(公告)号：US06328560B1
公开(公告)日：2001-12-11
申请号：US09496058
申请日：2000-02-02
申请人： Takao Fujikawa , Takahiko Ishii , Tsuneharu Masuda , Makoto Kadoguchi , Yutaka Narukawa
发明人： Takao Fujikawa , Takahiko Ishii , Tsuneharu Masuda , Makoto Kadoguchi , Yutaka Narukawa
IPC分类号： F27B504
CPC分类号： C23C14/5806 , C23C14/046 , C23C14/5886 , C30B33/005
摘要： An inner vessel 16 capable of hermetically surrounding a portion for disposing works W is disposed to the inside of a pressure vessel 4, the inner vessel 16 is provided with a gas introducing portion 18 at a lower position thereof free from the effect a high temperature atmosphere formed by heaters 11 and 12, a filter 20 is disposed to the gas introducing portion 18 and a check valve 19 is disposed to the inner vessel 16 for allowing a gas to flow unidirectionally from the inside to the outside thereof.
摘要翻译：能够气密地围绕用于设置工件W的部分的内部容器16设置在压力容器4的内部，内部容器16在其下部设置有气体导入部18，而不产生高温气氛由加热器11和12形成，过滤器20设置在气体导入部分18上，止回阀19设置在内部容器16上，用于允许气体从内部单向流动到外部。

8. 发明授权

US5792271A System for supplying high-pressure medium gas 失效
标题翻译：供应高压中等气体的系统
公开(公告)号：US5792271A
公开(公告)日：1998-08-11
申请号：US845821
申请日：1997-04-28
申请人： Takao Fujikawa , Takahiko Ishii , Tomomitsu Nakai , Yoshihiko Sakashita
发明人： Takao Fujikawa , Takahiko Ishii , Tomomitsu Nakai , Yoshihiko Sakashita
IPC分类号： F27B17/00 , B01J3/02 , B01J4/00 , F17C7/00 , H01L23/02 , C23C14/80
CPC分类号： F17C7/00 , B01J3/02 , B01J4/008 , F17C2205/0332 , F17C2205/0341 , F17C2221/011 , F17C2221/016 , F17C2221/05 , F17C2223/0123 , F17C2227/0348 , F17C2227/0386 , F17C2227/048 , F17C2270/0518
摘要： The present invention provides a system for supplying a high-pressure medium gas suitable for processing a semiconductor to be processed by heating under isostatic pressure in a short cycle. The system includes a gas holder containing a high-pressure medium gas, a compressor for pressurizing the high-pressure medium gas supplied from the gas holder, a high-pressure vessel having a heater, an accumulator for storing the high-pressure medium gas pressurized by the compressor, a first evacuation unit for evacuating the inside of a pipeline for the high-pressure medium gas, a vacuum casing for holding the opening of the high-pressure vessel in a vacuum, a second evacuation unit for evacuating the inside of the vacuum casing, and a valve unit for connecting the high-pressure vessel and the accumulator so that series connection and parallel connection can be switched on the outlet side of the compressor.
摘要翻译：本发明提供了一种用于在短时间内以等压压力下加热适于处理待处理半导体的高压介质气体的系统。该系统包括含有高压介质气体的气体保持器，用于对从气体保持器供给的高压介质气体进行加压的压缩机，具有加热器的高压容器，用于将高压介质气体进行加压的储液器通过压缩机将用于排出高压介质气体的管道内部的第一抽空单元，用于将高压容器的开口保持在真空中的真空壳体，用于抽出高压介质气体的内部的第二抽空单元真空壳体和用于连接高压容器和蓄能器的阀单元，使得可以在压缩机的出口侧上切换串联和并联连接。

9. 发明授权

US5665291A Method for producing high density sintered silicon nitride(Si.sub.3 N.sub.4 ) 失效
标题翻译：生产高密度烧结氮化硅（Si3N4）的方法
公开(公告)号：US5665291A
公开(公告)日：1997-09-09
申请号：US463273
申请日：1995-06-05
申请人： Katuhiko Honma , Tsuneo Tatsuno , Hiroshi Okada , Masato Moritoki , Takao Fujikawa
发明人： Katuhiko Honma , Tsuneo Tatsuno , Hiroshi Okada , Masato Moritoki , Takao Fujikawa
IPC分类号： C04B35/593 , C04B35/584
CPC分类号： C04B35/593 , C04B35/5935
摘要： The specification describes a method for producing high density sintered silicon nitride (Si.sub.3 N.sub.4) having a relative density of at least 98%. In a first step, silicon nitride powder is compacted into a desired shape. It is then pre-sintered in a second step, generally, under normal pressure to obtain a presintered body having a relative density of at least 92%. In a third step, the presintered body is subjected to a hot isostatic pressing (HIP) in an inert gas atmosphere of 1500.degree.-2100.degree. C. and of nitrogen gas partial pressure of at least 500 atm. Since the presintering does not require any capsule, it is possible to produce high density sintered Si.sub.3 N.sub.4 of complex configurations. As a sintering aid, Y.sub.2 O.sub.3 --Al.sub.2 O.sub.3 --MgO system sintering aid is particularly effective. To improve the strength of sintered Si.sub.3 N.sub.4, it is effective to add a heat treatment step after the HIP and maintain the temperature of the sintered Si.sub.3 N.sub.4 above 500.degree. C. for a while. Between the second and third steps, the temperature of the presintered body is preferably maintained above 500.degree. C. These temperature controls are effective not only to improve the strength of sintered Si.sub.3 N.sub.4 but also to save the thermal energy and to shorten the production cycle.
摘要翻译：该说明书描述了一种生产相对密度至少为98％的高密度烧结氮化硅（Si3N4）的方法。在第一步骤中，氮化硅粉末被压制成所需的形状。通常在常压下在第二步骤中预烧结，得到相对密度至少为92％的预烧结体。在第三步骤中，将预烧结体在1500-2100℃的惰性气体气氛和至少500atm的氮气分压下进行热等静压（HIP）。由于预烧结不需要任何胶囊，因此可以生产复合结构的高密度烧结Si 3 N 4。作为烧结助剂，Y2O3-Al2O3-MgO体系的烧结助剂特别有效。为了提高烧结Si3N4的强度，在HIP之后添加热处理步骤并将烧结的Si 3 N 4的温度保持在500℃以上一段时间是有效的。在第二和第三步骤之间，预烧结体的温度优选保持在500℃以上。这些温度控制不仅有效地提高了烧结Si 3 N 4的强度，而且有效地节约了热能并缩短了生产周期。

10. 发明授权

US5092938A Temperature detector for use in high temperature and high pressure furnaces 失效
标题翻译：用于高温高压炉的温度检测器
公开(公告)号：US5092938A
公开(公告)日：1992-03-03
申请号：US258113
申请日：1988-10-14
申请人： Takeshi Kanda , Takao Fujikawa , Shigeo Kofune
发明人： Takeshi Kanda , Takao Fujikawa , Shigeo Kofune
IPC分类号： G01K1/08 , G01K7/04
CPC分类号： G01K1/08 , B30B11/002 , G01K7/04
摘要： A temperature detector for use in a high temperature and high pressure furnace, including thermocouple wires received in a tubular protective sheath for protection against the furnace atmosphere, and characterized by the provision of a pair of rod members of a large diameter serving as a thermocouple pair for the positive and negative sides thereof, a protective sheath having a rod suspending holder portion in an upper portion thereof for supporting the thermocouple rod members therein in a vertically suspended state and arranged to hold the rod members out of contact with each other except at a temperature measuring point and to contact the rod members with the protective sheath only in a region other than a high temperature region of the furnace.
摘要翻译：一种在高温高压炉中使用的温度检测器，包括容纳在管状保护套中的热电偶线，用于保护炉气氛，并且特征在于提供一对大直径的杆构件作为热电偶对对于其正面和负面，具有在其上部具有杆悬挂保持器部分的保护护套，用于将垂直悬挂状态的热电偶杆构件支撑在其中，并且布置成保持杆构件彼此不接触，除了在温度测量点，并且仅在除了炉的高温区域之外的区域中将杆构件与保护护套接触。

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