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1. 外观设计

USD411265S Radio remote control unit 失效
公开(公告)号：USD411265S
公开(公告)日：1999-06-22
申请号：US66369
申请日：1997-02-07
申请人： Nobumitsu Kanetsuna , Kazunori Fujita , Masahiro Arai , Masanao Endo
设计人： Nobumitsu Kanetsuna , Kazunori Fujita , Masahiro Arai , Masanao Endo

2. 外观设计

USD397169S Radio remote control unit 失效
公开(公告)号：USD397169S
公开(公告)日：1998-08-18
申请号：US62245
申请日：1996-11-12
申请人： Nobumitsu Kanetsuna , Kazunori Fujita , Masanao Endo
设计人： Nobumitsu Kanetsuna , Kazunori Fujita , Masanao Endo

3. 外观设计

USD395472S Radio remote control unit 失效
公开(公告)号：USD395472S
公开(公告)日：1998-06-23
申请号：US62247
申请日：1996-11-12
申请人： Nobumitsu Kanetsuna , Kazunori Fujita , Eiji Jinno
设计人： Nobumitsu Kanetsuna , Kazunori Fujita , Eiji Jinno

4. 外观设计

USD390613S Radio remote control unit 失效
公开(公告)号：USD390613S
公开(公告)日：1998-02-10
申请号：US062246
申请日：1996-11-12
申请人： Nobumitsu Kanetsuna , Kazunori Fujita , Toshiyuki Akiba
设计人： Nobumitsu Kanetsuna , Kazunori Fujita , Toshiyuki Akiba

5. 发明授权

US07655974B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07655974B2
公开(公告)日：2010-02-02
申请号：US11829310
申请日：2007-07-27
申请人： Satoru Shimada , Yoshikazu Yamaoka , Kazunori Fujita , Tomonori Tabe
发明人： Satoru Shimada , Yoshikazu Yamaoka , Kazunori Fujita , Tomonori Tabe
IPC分类号： H01L29/76
CPC分类号： H01L21/761 , H01L21/763 , H01L27/088 , H01L29/1087 , H01L29/41741 , H01L29/41766 , H01L29/66734 , H01L29/7809 , H01L29/7813
摘要： A semiconductor device that reduces the width of an isolation region between semiconductor elements. The semiconductor device includes a semiconductor substrate, an epitaxial layer formed on the semiconductor substrate, a buried layer formed between the semiconductor substrate and the epitaxial layer, a first trench formed in the epitaxial layer so as to surround the buried layer, and an insulation film formed in the first trench.
摘要翻译：一种半导体器件，其减小半导体元件之间的隔离区域的宽度。半导体器件包括半导体衬底，形成在半导体衬底上的外延层，形成在半导体衬底和外延层之间的掩埋层，形成在外延层中以围绕掩埋层的第一沟槽，以及绝缘膜形成在第一个沟槽。

6. 发明授权

US07361992B2 Semiconductor device including interconnects formed by damascene process and manufacturing method thereof 有权
标题翻译：包括通过镶嵌工艺形成的互连的半导体器件及其制造方法
公开(公告)号：US07361992B2
公开(公告)日：2008-04-22
申请号：US10664875
申请日：2003-09-22
申请人： Naoteru Matsubara , Kazunori Fujita
发明人： Naoteru Matsubara , Kazunori Fujita
IPC分类号： H01L29/40
CPC分类号： H01L21/76807 , H01L21/76825 , H01L21/76826 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： After etching the interlayer dielectric film 4 formed on the lower layer interconnect line 1 into a shape with holes, the upper layer dielectric film 6 is etched into a shape with trenches utilizing the etching stopper 5. The etching stopper 5 which is exposed at the bottom of the trench is removed by additional etching, and then, the interlayer dielectric film 4 which is exposed at the bottom of the trench is etched back to a predetermined thickness. Subsequently, the hole and the trench are filled with an interconnect metal 10.
摘要翻译：在将下层布线1上形成的层间绝缘膜4蚀刻成具有孔的形状之后，将上层电介质膜6用蚀刻阻挡层5蚀刻成具有沟槽的形状。通过附加蚀刻去除在沟槽底部暴露的蚀刻阻挡层5，然后将在沟槽底部暴露的层间绝缘膜4回蚀刻到预定厚度。随后，孔和沟槽填充互连金属10。

7. 发明授权

US06559031B2 Method of fabricating semiconductor device having element isolation trench 有权
公开(公告)号：US06559031B2
公开(公告)日：2003-05-06
申请号：US09960494
申请日：2001-09-24
申请人： Kazunori Fujita
发明人： Kazunori Fujita
IPC分类号： H01L2176
CPC分类号： H01L21/76235
摘要： A method of fabricating a semiconductor device capable of sufficiently rounding an opening upper end of an element isolation trench is obtained. This method of fabricating a semiconductor device comprises steps of forming an element isolation trench on a semiconductor substrate, performing thermal oxidation on at least an opening upper end of the element isolation trench while increasing the atmosphere temperature of the semiconductor substrate beyond a prescribed temperature thereby forming a first oxide film and suppressing formation of the first oxide film on the opening upper end before the atmosphere temperature is increased beyond the prescribed temperature. Thus, the semiconductor substrate is prevented from oxidation under a low temperature, whereby oxidation is more thickly performed by thermal oxidation in a high-temperature region while relaxing stress applied to the semiconductor substrate. Therefore, oxidation is thickly performed in the high-temperature region not reducing the oxidizing velocity for a corner portion, whereby the opening upper end of the element isolation trench can be sufficiently rounded.

8. 发明授权

US4493878A Fuel element for liquid fuel cell and a liquid fuel cell 失效
标题翻译：用于液体燃料电池和液体燃料电池的燃料元件
公开(公告)号：US4493878A
公开(公告)日：1985-01-15
申请号：US482723
申请日：1983-04-07
申请人： Tatsuo Horiba , Kazuo Iwamoto , Hidejiro Kawana , Kazunori Fujita , Kohki Tamura
发明人： Tatsuo Horiba , Kazuo Iwamoto , Hidejiro Kawana , Kazunori Fujita , Kohki Tamura
IPC分类号： H01M8/06 , H01M8/00 , H01M8/04 , H01M8/08 , H01M6/36
CPC分类号： H01M8/08 , H01M8/00 , H01M8/04186
摘要： This invention is a fuel element for liquid fuel cell characterized in that a liquid fuel is rendered to assume a non-fluidized state by either physical means or chemical means, and is returned back to the initial liquid fuel at any time by physical means or chemical means.
摘要翻译：本发明是一种用于液体燃料电池的燃料元件，其特征在于液体燃料通过物理手段或化学方式使其处于非流化状态，并随时通过物理手段或化学物质返回到初始液体燃料手段。

9. 发明授权

US4073725A Method and apparatus for liquid chromatography under elevated pressure 失效
标题翻译：高压液相色谱法
公开(公告)号：US4073725A
公开(公告)日：1978-02-14
申请号：US679750
申请日：1976-04-23
申请人： Seiji Takeuchi , Kazunori Fujita , Ikuo Shimokobe
发明人： Seiji Takeuchi , Kazunori Fujita , Ikuo Shimokobe
IPC分类号： B01D15/08 , G01N30/96
CPC分类号： B01D15/18 , B01D15/203 , B01D15/361 , B01D15/424 , G01N30/96
摘要： A sample containing a plurality of components to be analyzed is introduced to a separation column at its top through a sample feeding device. The sample thus introduced is separated to the individual components in the separation column. Ion exchange resins capable of undergoing deformation depending upon an applied pressure are filled in the separation column. An eluting solution containing sodium ions is fed to the separation column at its top under a pressure of 40 kg/cm.sup.2 or higher through a feed pump. Components leaving the separation column at its bottom are detected by a detector. After the components have left the separation column, a regenerating solution containing lithium ions is introduced to the separation column at its bottom, and is made to leave the separation column at its top. The ion exchange resins are regenerated by passing the regenerating solution through the separation column, and a separation for another sample is made ready thereby. Another sample is then introduced into the separation column at its bottom and the separated components of the sample are made to leave the separation column at its top.
摘要翻译：将待分析的多种成分的样品在其顶部通过样品供给装置引入分离塔。将如此引入的样品分离成分离塔中的各个组分。能够根据施加的压力进行变形的离子交换树脂填充在分离塔中。含有钠离子的洗脱溶液通过进料泵以40kg / cm 2或更高的压力在其顶部进料至分离塔。通过检测器检测离开分离柱在其底部的组分。在组分离开分离柱后，将含有锂离子的再生溶液在其底部引入分离塔，并使分离塔离开顶部。离子交换树脂通过使再生溶液通过分离塔而再生，并且由此准备另一个样品的分离。然后将另一个样品在其底部引入分离塔，并将样品的分离组分留在顶部的分离塔。

10. 发明申请

US20080185638A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080185638A1
公开(公告)日：2008-08-07
申请号：US11965536
申请日：2007-12-27
申请人： Yoshikazu YAMAOKA , Satoru Shimada , Kazunori Fujita , Kazuhiro Sasada
发明人： Yoshikazu YAMAOKA , Satoru Shimada , Kazunori Fujita , Kazuhiro Sasada
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/4236 , H01L21/2815 , H01L29/42372 , H01L29/42376 , H01L29/4238 , H01L29/66348 , H01L29/66734 , H01L29/7397 , H01L29/7809 , H01L29/7813
摘要： A semiconductor device capable of inhibiting a fabricating process from complication while inhibiting the dielectric strength voltage of a insulating film from reduction is obtained. This semiconductor device includes a groove portion, an insulating film formed on a surface of the groove portion, a gate electrode and a source impurity region, wherein upper ends of the gate electrode, which are portions in contact with the insulating film, are each located at a position identical with or deeper than the range of an impurity introduced from a surface of a semiconductor substrate with respect to the insulating film in order to form the source impurity region and above a lower surface of the source impurity region.
摘要翻译：可以获得能够在抑制绝缘膜的介电强度电压降低的同时抑制制造工艺的复杂化的半导体器件。该半导体器件包括沟槽部分，形成在沟槽部分的表面上的绝缘膜，栅极电极和源极杂质区域，其中栅电极的与绝缘膜接触的部分的上端分别位于在与半导体衬底的表面相对于绝缘膜引入的杂质的范围相同或更深的位置处，以形成源极杂质区域和源极杂质区域的下表面之上。

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