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    • 9. 发明授权
    • Semiconductor device and method for manufacturing the same
    • 半导体装置及其制造方法
    • US06593233B1
    • 2003-07-15
    • US09093819
    • 1998-06-09
    • Kazuki MiyazakiKazunobu ShigeharaMasanobu Zenke
    • Kazuki MiyazakiKazunobu ShigeharaMasanobu Zenke
    • H01L2144
    • H01L21/76877H01L21/76838H01L23/5226H01L23/53257H01L2924/0002H01L2924/00
    • In a semiconductor device having a metal wiring conductor connected to a contact hole formed through an interlayer insulator layer formed on a lower level circuit, a lower level tungsten film is deposited under a condition giving an excellent step coverage so as to fill the contact hole, and an upper level tungsten film is further deposited under a condition of forming a film having a stress smaller than that of the lower level tungsten film. The metal wiring conductor is formed of a double layer which is composed of the lower level tungsten film and the upper level tungsten film, and therefore, has a reduced stress in the whole of the film. Thus, there is obtained the tungsten film wiring conductor which fills the inside of the contact hole with no void and therefore has a high reliability, and which has a low film stress. In addition, the number of steps in the manufacturing process can be reduced.
    • 在具有连接到通过形成在下层电路上的层间绝缘体层形成的接触孔的金属布线导体的半导体器件中,在提供优良阶梯覆盖的条件下沉积下层钨膜以便填充接触孔, 并且在形成具有比下层钨膜的应力小的膜的膜的条件下进一步沉积上层钨膜。 金属布线导体由下层钨膜和上层钨膜构成的双层形成,因此整个膜的应力减小。 因此,获得了没有空隙填充接触孔内部的钨膜布线导体,因此具有高的可靠性,并且膜应力低。 此外,可以减少制造过程中的步骤数。