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1. 发明授权

US07014722B1 Titanium material superior in upset-forgeability and method of producing the same 有权
标题翻译：镦锻性优异的钛材料及其制造方法
公开(公告)号：US07014722B1
公开(公告)日：2006-03-21
申请号：US10048974
申请日：2000-08-10
申请人： Nobuhiro Arimoto , Tadashi Ogasawara , Isao Uemura , Youji Mitani , Takashi Oonishi
发明人： Nobuhiro Arimoto , Tadashi Ogasawara , Isao Uemura , Youji Mitani , Takashi Oonishi
IPC分类号： C22C14/00 , C21D8/10
CPC分类号： C22F1/183 , B21J1/02 , C23C14/3414
摘要： In finifsh-cogging a high-purity titanium material into a cylindrical form as the final shape, if cylindrical cogging is performed in all stages of warm forging or if cylindrical cogging is performed in the initial stage of the warm forging, there is no need of peripherally restricting the cylindrical cogging material, so that even if longitudinal upset-forging is effected with an upsetting ratio of 2, the condition that the major diameter/minor diameter ratio of the section after forging is not more than 1.01 can be satisfied, developing superior upset-forgeability. This makes it possible, in producing disk-like targets for sputtering, to minimize cutting loss produced during the rolling and machining and to maximize the yield of products; therefore, the material can be widely used as a semiconductor material for electrodes and the like using a high-purity titanium material.
摘要翻译：在将高纯度钛材料精加工成圆柱形作为最终形状时，如果在锻造的所有阶段进行圆柱形齿槽，或者在锻造的初始阶段执行圆柱形齿槽，则不需要周边地限制圆筒形齿槽材料，使得即使纵向镦锻锻造以镦锻比为2进行，也可以满足锻造后的长径/小径比不大于1.01的条件，显影性优异不安的可锻性这使得在制造用于溅射的圆盘状目标中可以最小化在轧制和机械加工期间产生的切割损失并最大化产品的产量; 因此，该材料可以广泛用作使用高纯度钛材料的电极等的半导体材料。

2. 再颁专利

USRE43590E1 Aluminum alloy electrode for semiconductor devices 有权
标题翻译：半导体器件铝合金电极
公开(公告)号：USRE43590E1
公开(公告)日：2012-08-21
申请号：US11430302
申请日：2006-05-09
申请人： Seigo Yamamoto , Katsutoshi Takagi , Eiji Iwamura , Kazuo Yoshikawa , Takashi Oonishi
发明人： Seigo Yamamoto , Katsutoshi Takagi , Eiji Iwamura , Kazuo Yoshikawa , Takashi Oonishi
IPC分类号： H01L23/54
CPC分类号： H01L21/2855 , H01L23/53219 , H01L2924/0002 , Y10T428/12736 , H01L2924/00
摘要： Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %. The method of fabricating an electrode for semiconductor devices, includes the steps of: depositing an Al alloy film, in which the elements mentioned above are dissolved in an Al matrix, on a substrate; and precipitating part of all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150° to 400° C.; whereby an electrode for semiconductor devices which is made of an Al alloy film with an electrical resistivity lower than 20 μΩcm is obtained. The target is made of an Al alloy containing the above elements.REEXAMINATION RESULTSThe questions raised in reexamination proceedings Nos. 90/007,822 and 90/007,883, filed Nov. 28, 2005 and Nov. 28, 2005 respectively, have been considered, and the results thereof are reflected in this reissue patent which constitutes the reexamination certificate required by 35 U.S.C. 307 as provided in 37 CFR 1.570(e) for ex parte reexaminations, and/or the reexamination certificate required by 35 U.S.C. 316 as provided in 37 CFR 1.997(e) for inter partes reexaminations.
摘要翻译：公开了一种能够抑制小丘的产生和降低电阻率的半导体器件用电极，其适用于使用薄膜晶体管的有源矩阵液晶显示器等; 其制作方法; 以及用于形成半导体器件用电极膜的溅射靶。用于半导体器件的电极由含有一种或多种选自Fe，Co，Ni，Ru，Rh和Ir的合金元素的Al合金制成，总量为0.1至10原子％，或选择一种或多种合金元素来自稀土元素，总量为0.05〜15原子％。制造半导体器件的电极的方法包括以下步骤：在基底上沉积上述元素溶解在Al基体中的Al合金膜; 并且通过在150℃至400℃的退火温度下退火Al合金膜，使溶解在Al基体中的所有元素的一部分沉淀为金属间化合物; 由此获得由电阻率小于20μΩ·cm·cm的Al合金膜制成的半导体器件用电极。目标由含有上述元素的Al合金制成。重审结果2005年11月28日和2005年11月28日提交的第90 / 007,822号和第90 / 007,883号复核程序中提出的问题已经被考虑，其结果反映在构成复审的重新发行专利中 35USC要求的证书根据37 CFR 1.570（e）规定，单方面复审，和/或35 U.S.C.所要求的复审证书。按照第37 CFR 1.997（e）条的规定进行跨部门重新审查。

3. 发明授权

US6033542A Electrode and its fabrication method for semiconductor devices, and sputtering target for forming electrode film for semiconductor devices 失效
标题翻译：电极及其半导体器件的制造方法以及用于形成用于半导体器件的电极膜的溅射靶
公开(公告)号：US6033542A
公开(公告)日：2000-03-07
申请号：US574693
申请日：1995-12-19
申请人： Seigo Yamamoto , Katsutoshi Takagi , Eiji Iwamura , Kazuo Yoshikawa , Takashi Oonishi
发明人： Seigo Yamamoto , Katsutoshi Takagi , Eiji Iwamura , Kazuo Yoshikawa , Takashi Oonishi
IPC分类号： C23C14/34 , H01L21/285 , H01L21/3205 , H01L23/52 , H01L23/532
CPC分类号： H01L21/2855 , H01L23/53219 , H01L2924/0002 , Y10T428/12736
摘要： Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %. The method of fabricating an electrode for semiconductor devices, includes the steps of: depositing an Al alloy film, in which the elements mentioned above are dissolved in an Al matrix, on a substrate; and precipitating part of all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150 to 400.degree. C.; whereby an electrode for semiconductor devices which is made of an Al alloy film with an electrical resistivity lower than 20 .mu..OMEGA.cm is obtained. The target is made of an Al alloy containing the above elements.
摘要翻译：公开了一种能够抑制小丘的产生和降低电阻率的半导体器件用电极，其适用于使用薄膜晶体管的有源矩阵液晶显示器等; 其制作方法; 以及用于形成半导体器件用电极膜的溅射靶。用于半导体器件的电极由含有一种或多种选自Fe，Co，Ni，Ru，Rh和Ir的合金元素的Al合金制成，总量为0.1至10原子％，或选择一种或多种合金元素来自稀土元素，总量为0.05〜15原子％。制造半导体器件的电极的方法包括以下步骤：在基底上沉积上述元素溶解在Al基体中的Al合金膜; 并通过在150-400℃的退火温度下退火Al合金膜，将溶解在Al基体中的所有元素的一部分沉淀为金属间化合物。由此获得由电阻率小于20微米欧米伽厘米的Al合金膜制成的半导体器件用电极。目标由含有上述元素的Al合金制成。

4. 再颁专利

USRE44239E1 Electrode and its fabrication method for semiconductor devices, and sputtering target for forming electrode film for semiconductor devices 有权
标题翻译：电极及其半导体器件的制造方法以及用于形成用于半导体器件的电极膜的溅射靶
公开(公告)号：USRE44239E1
公开(公告)日：2013-05-28
申请号：US11430299
申请日：2006-05-09
申请人： Seigo Yamamoto , Katsutoshi Takagi , Eiji Iwamura , Kazuo Yoshikawa , Takashi Oonishi
发明人： Seigo Yamamoto , Katsutoshi Takagi , Eiji Iwamura , Kazuo Yoshikawa , Takashi Oonishi
IPC分类号： C23C14/34
CPC分类号： H01L21/2855 , H01L23/53219 , H01L2924/0002 , Y10T428/12736 , H01L2924/00
摘要： Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %. The method of fabricating an electrode for semiconductor devices, includes the steps of: depositing an Al alloy film, in which the elements mentioned above are dissolved in an Al matrix, on a substrate; and precipitating part of all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150 to 400° C.; whereby an electrode for semiconductor devices which is made of an Al alloy film with an electrical resistivity lower than 20 μΩcm is obtained. The target is made of an Al alloy containing the above elements.
摘要翻译：公开了一种能够抑制小丘的产生和降低电阻率的半导体器件用电极，其适用于使用薄膜晶体管的有源矩阵液晶显示器等; 其制作方法; 以及用于形成半导体器件用电极膜的溅射靶。用于半导体器件的电极由含有一种或多种选自Fe，Co，Ni，Ru，Rh和Ir的合金元素的Al合金制成，总量为0.1至10原子％，或选择一种或多种合金元素来自稀土元素，总量为0.05〜15原子％。制造半导体器件的电极的方法包括以下步骤：在基底上沉积上述元素溶解在Al基体中的Al合金膜; 并且通过在150-400℃的退火温度下退火Al合金膜，将溶解在Al基体中的所有元素的一部分沉淀为金属间化合物; 由此获得由电阻率小于20μOmegacm的Al合金膜制成的半导体器件用电极。目标由含有上述元素的Al合金制成。

5. 发明授权

US5514909A Aluminum alloy electrode for semiconductor devices 失效
标题翻译：半导体器件铝合金电极
公开(公告)号：US5514909A
公开(公告)日：1996-05-07
申请号：US281028
申请日：1994-07-27
申请人： Seigo Yamamoto , Katsutoshi Takagi , Eiji Iwamura , Kazuo Yoshikawa , Takashi Oonishi
发明人： Seigo Yamamoto , Katsutoshi Takagi , Eiji Iwamura , Kazuo Yoshikawa , Takashi Oonishi
IPC分类号： C23C14/34 , H01L21/285 , H01L21/3205 , H01L23/52 , H01L23/532 , H01L23/544
CPC分类号： H01L21/2855 , H01L23/53219 , H01L2924/0002 , Y10T428/12736
摘要： Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %. The method of fabricating an electrode for semiconductor devices, includes the steps of: depositing an Al alloy film, in which the elements mentioned above are dissolved in an Al matrix, on a substrate; and precipitating part of all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150.degree. to 400.degree. C.; whereby an electrode for semiconductor devices which is made of an Al alloy film with an electrical resistivity lower than 20 .mu..OMEGA.cm is obtained. The target is made of an Al alloy containing the above elements.
摘要翻译：公开了一种能够抑制小丘的产生和降低电阻率的半导体器件用电极，其适用于使用薄膜晶体管的有源矩阵液晶显示器等; 其制作方法; 以及用于形成半导体器件用电极膜的溅射靶。用于半导体器件的电极由含有一种或多种选自Fe，Co，Ni，Ru，Rh和Ir的合金元素的Al合金制成，总量为0.1至10原子％，或选择一种或多种合金元素来自稀土元素，总量为0.05〜15原子％。制造半导体器件的电极的方法包括以下步骤：在基底上沉积上述元素溶解在Al基体中的Al合金膜; 并将溶解在Al基体中的所有元素的一部分析出为金属间化合物，退火温度为150〜400℃退火Al合金膜。由此获得由电阻率小于20微米欧米伽厘米的Al合金膜制成的半导体器件用电极。目标由含有上述元素的Al合金制成。

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