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1. 发明授权

US5834730A Plasma processing equipment and gas discharging device 失效
标题翻译：等离子体处理设备和排气装置
公开(公告)号：US5834730A
公开(公告)日：1998-11-10
申请号：US792138
申请日：1997-01-31
申请人： Setsu Suzuki , Noboru Tokumasu , Kazuo Maeda , Junichi Aoki
发明人： Setsu Suzuki , Noboru Tokumasu , Kazuo Maeda , Junichi Aoki
IPC分类号： H01J37/32 , B23K10/00
CPC分类号： H01J37/32009 , H01J37/32082
摘要： A gas discharging device is provided which has a function as one of opposing electrodes to plasmanize a reaction gas and executes film formation and etching with a plasma gas. The device comprises a base body having a recess portion at its central portion and a through-hole for introducing a gas into the recess portion, a gas distributing plate provided in the recess portion for introducing the gas in a radial direction, and an annular gas discharging member for discharging the gas introduced by the gas distributing plate.
摘要翻译：提供一种气体放电装置，其具有用于使反应气体质量化的相对电极之一的功能，并且利用等离子体气体执行成膜和蚀刻。该装置包括在其中心部分具有凹部的基体和用于将气体引入凹部的通孔，设置在凹部中的用于沿径向引入气体的气体分配板，以及环形气体用于排出由气体分配板引入的气体的排出构件。

2. 发明授权

US5800877A Method for forming a fluorine containing silicon oxide film 失效
标题翻译：含氟氧化硅膜的形成方法
公开(公告)号：US5800877A
公开(公告)日：1998-09-01
申请号：US694660
申请日：1996-08-09
申请人： Kazuo Maeda , Noboru Tokumasu , Yoshiaki Yuyama
发明人： Kazuo Maeda , Noboru Tokumasu , Yoshiaki Yuyama
IPC分类号： H01L21/31 , C23C16/40 , H01L21/316 , C23C16/42 , H05H1/00
CPC分类号： H01L21/02131 , C23C16/401 , H01L21/02271 , H01L21/0234 , H01L21/31629
摘要： In a method for forming a film by thermal CVD, a fluorine-containing silicon oxide film is formed on a substrate by thermal reaction of a mixed gas while heating the substrate. The mixed gas includes an organic silane having a Si-F bond, an organic silane having no Si-F bond, and ozone.
摘要翻译：在通过热CVD形成膜的方法中，在加热基板的同时通过混合气体的热反应在基板上形成含氟氧化硅膜。混合气体包括具有Si-F键的有机硅烷，不具有Si-F键的有机硅烷和臭氧。

3. 发明授权

US5231058A Process for forming CVD film and semiconductor device 失效
标题翻译：用于形成CVD膜和半导体器件的方法
公开(公告)号：US5231058A
公开(公告)日：1993-07-27
申请号：US628237
申请日：1990-12-14
申请人： Kazuo Maeda , Noboru Tokumasu , Yuko Nishimoto
发明人： Kazuo Maeda , Noboru Tokumasu , Yuko Nishimoto
IPC分类号： C23C16/40 , H01L21/316
CPC分类号： H01L21/02271 , C23C16/401 , H01L21/02129 , H01L21/02164 , H01L21/02216 , H01L21/31612 , H01L21/31625
摘要： In a process for forming a CVD film, a polysiloxane compound having at least two silicon-oxygen bonds is reacted with ozone to form an SiO.sub.2 film. If desired, the reaction may be effected in the presence of a gas containing an impurity mixed with the polysiloxane compound and ozone to form a PSG, BSG or BPSG film. In a semiconductor device, the SiO.sub.2 film, or the PSG, BSG or BPSG film is used as a planarizing film, an interlayer insulating film, or a cover insulating film.

4. 发明授权

US4731255A Gas-phase growth process and an apparatus for the same 失效
标题翻译：气相生长过程及其设备
公开(公告)号：US4731255A
公开(公告)日：1988-03-15
申请号：US780205
申请日：1985-09-26
申请人： Kazuo Maeda , Noboru Tokumasu , Toshihiko Fukuyama , Tsugiaki Hirata
发明人： Kazuo Maeda , Noboru Tokumasu , Toshihiko Fukuyama , Tsugiaki Hirata
IPC分类号： B05D3/06 , B05D7/24 , C23C16/44 , C23C16/455 , C23C16/48 , C30B25/10 , C30B25/14
CPC分类号： C23C16/45504 , B05D1/60 , C23C16/455 , C23C16/482 , C23C16/488 , C30B25/105 , C30B25/14 , B05D3/061
摘要： A gas-phase growth process for growing films of uniform thickness or having a prescribed pattern form or growing films sequentially onto a substrate and an apparatus related thereto. The films are grown by allowing an inert gas to flow over a reaction gas flow in parallel to the surface of the substrate. Optionally, the substrate surface could be irradiated by a UV light source which is directed from above the inert gas toward the substrate surface.
摘要翻译：用于生长均匀厚度的膜或具有规定图案形式的膜或顺序生长膜到基板上的气相生长工艺和与其相关的装置。通过使惰性气体平行于衬底的表面流过反应气体流而生长膜。任选地，可以通过从惰性气体上方向衬底表面引导的UV光源照射衬底表面。

5. 发明授权

US4702936A Gas-phase growth process 失效
标题翻译：气相生长过程
公开(公告)号：US4702936A
公开(公告)日：1987-10-27
申请号：US778004
申请日：1985-09-20
申请人： Kazuo Maeda , Noboru Tokumasu , Toshihiko Fukuyama
发明人： Kazuo Maeda , Noboru Tokumasu , Toshihiko Fukuyama
IPC分类号： C23C16/30 , C23C16/34 , C23C16/40 , C23C16/48 , C30B25/02 , B05D3/06
CPC分类号： C23C16/482 , C23C16/308 , C23C16/345 , C23C16/401 , C23C16/402 , C30B25/02
摘要： A gas-phase growth process for forming a film of SiO.sub.2 Si.sub.3 N.sub.4 or Si.sub.x O.sub.y N.sub.z, which comprises reacting a mixture of an organic or inorganic silane with one or more reaction gases comprising O.sub.2, N.sub.2 O, NO.sub.2 NO, CO.sub.2 CO and NH.sub.3, with the proviso that the mixture of inorganic silane and O.sub.2 is excluded as a reaction gas combination of the present invention. The process comprises feeding a reaction gas into a reaction chamber which is kept at a reaction temperature below 500.degree. C., and subjecting the surface of a substrate chamber which is placed in the reaction chamber to UV irradiation. This irradiation excites the reaction gas, which allows a low-temperature gas-phase growth to proceed. The photo-excitation occurs selectively only at UV-irradiated sections, so that a film growth may occur selectively on the substrate surface within the range of UV irradiation. The optional use of a suitable mask allows a film of a prescribed pattern to be formed on the substrate surface.
摘要翻译：一种用于形成SiO 2 + L，Si 3 N 4或SixO y N z的膜的气相生长方法，其包括将有机或无机硅烷的混合物与一种或多种包含O 2，N 2 O，NO 2 + L，NO，CO 2 + L的反应气体，CO和NH 3，条件是排除无机硅烷和O 2的混合物作为本发明的反应气体组合。该方法包括将反应气体进料到保持在低于500℃的反应温度的反应室中，并将放置在反应室中的基板室的表面进行紫外线照射。该照射激发反应气体，这允许进行低温气相生长。光激发仅在UV照射部分选择性地发生，从而在UV照射的范围内，可以在衬底表面上选择性地发生膜生长。可选地使用合适的掩模允许在基板表面上形成规定图案的膜。

6. 发明授权

US06432839B1 Film forming method and manufacturing method of semiconductor device 有权
公开(公告)号：US06432839B1
公开(公告)日：2002-08-13
申请号：US09804142
申请日：2001-03-13
申请人： Kazuo Maeda , Noboru Tokumasu , Yuki Ishii , Toshiro Nishiyama
发明人： Kazuo Maeda , Noboru Tokumasu , Yuki Ishii , Toshiro Nishiyama
IPC分类号： H01L2131
摘要： The invention is a method for forming a flattened interlayer insulating film covering a wiring layer or the like of a semiconductor IC device, and a method of manufacturing a semiconductor device. The film-forming method includes the steps of preparing a deposition gas containing an inert gas, and a silicon and phosphorus-containing compound having III valance phosphorus in which at least one oxygen is bonded to the phosphorous, and forming a silicon containing insulating film containing P2O3 on a substrate by using the deposition gas.

7. 发明授权

US06221755B1 Film formation method and manufacturing method of semiconductor device 失效
标题翻译：半导体器件的成膜方法及其制造方法
公开(公告)号：US06221755B1
公开(公告)日：2001-04-24
申请号：US09358399
申请日：1999-07-22
申请人： Noboru Tokumasu , Kazuo Maeda
发明人： Noboru Tokumasu , Kazuo Maeda
IPC分类号： H01L214763
CPC分类号： H01L21/02129 , C23C16/401 , H01L21/02216 , H01L21/02274 , H01L21/02337 , H01L21/31625
摘要： Disclosed is a film formation method of an interlayer insulating film which is flattened to cover a wiring layer of a semiconductor integrated circuit device, in which a film-forming gas is activated by converting the film-forming gas into a plasma, the film-forming gas being composed of either a mixed gas containing a phosphorus-containing compound containing trivalent phosphorus, which takes a Si—O—P structure, and a silicon-containing compound containing at most one oxygen atom or an additional mixed gas prepared by adding an oxidative gas to said mixed gas; and a silicon-containing insulating film containing P2O5 is formed on a substrate.
摘要翻译：公开了一种层间绝缘膜的成膜方法，该层间绝缘膜被平坦化以覆盖半导体集成电路器件的布线层，其中成膜气体通过将成膜气体转化成等离子体来激活成膜气体，成膜气体由含有含有三价磷的含磷化合物的混合气体构成，其具有Si-OP结构，以及含有至多一个氧原子的含硅化合物或通过将氧化性气体加成而制备的附加混合气体说混合气并且在基板上形成含有P 2 O 5的含硅绝缘膜。

8. 发明授权

US5569499A Method for reforming insulating film 失效
标题翻译：绝缘膜重整方法
公开(公告)号：US5569499A
公开(公告)日：1996-10-29
申请号：US331736
申请日：1994-10-31
申请人： Kazuo Maeda , Noboru Tokumasu , Yoshiaki Yuyama
发明人： Kazuo Maeda , Noboru Tokumasu , Yoshiaki Yuyama
IPC分类号： H01L21/31 , C23C16/40 , C23D13/00 , H01L21/316 , H01L21/768 , H05H1/00 , C23C16/00 , H05H1/24
CPC分类号： H01L21/76826 , C23C16/401 , C23D13/00 , H01L21/76801
摘要： A method for reforming an insulating film such as a BSG film formed by a CVD technique. The method reduces the parasitic capacitance between conductor layers having an intervening film, especially a BSG film, and includes the steps of depositing a BSG film on a substrate from a gaseous source and exposing the BSG film to a reforming gas plasma.
摘要翻译：一种用CVD法形成的BSG膜等绝缘膜的重整方法。该方法减小了具有中间膜，特别是BSG膜的导体层之间的寄生电容，并且包括以下步骤：将BSG膜从气态源沉积在衬底上，并将BSG膜暴露于重整气体等离子体。

9. 发明授权

US5532193A Method for forming insulating film 失效
标题翻译：绝缘膜的形成方法
公开(公告)号：US5532193A
公开(公告)日：1996-07-02
申请号：US331737
申请日：1994-10-31
申请人： Kazuo Maeda , Noboru Tokumasu , Yoshiaki Yuyama
发明人： Kazuo Maeda , Noboru Tokumasu , Yoshiaki Yuyama
IPC分类号： H01L21/205 , C03C3/089 , C23C16/40 , H01L21/31 , H01L21/316 , H01L21/02
CPC分类号： H01L21/02129 , C03C3/089 , C23C16/401 , H01L21/02216 , H01L21/02271 , H01L21/31625
摘要： The invention relates to a method for forming a BSG film by means of chemical vapor deposition, has an object which is to provide a film forming method making it possible to obtain a BSG film of high denseness and of low hygroscopicity even immediately after the film has been formed at a low temperature, and comprises a process of forming a borosilicate glass film (BSG film) on a substrate using a mixed gas of an organometallic compound having Si--O--B bond and ozone (O.sub.3).
摘要翻译：本发明涉及一种通过化学气相沉积法形成BSG膜的方法，其目的是提供一种成膜方法，使得可以在薄膜具有即使在即将到来之后立即获得高致密度和低吸湿性的BSG膜在低温下形成，并且包括使用具有Si-OB键和臭氧（O 3）的有机金属化合物的混合气体在基板上形成硼硅酸盐玻璃膜（BSG膜）的方法。

10. 发明授权

US5376591A Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5376591A
公开(公告)日：1994-12-27
申请号：US895472
申请日：1992-06-08
申请人： Kazuo Maeda , Noboru Tokumasu , Yuko Nishimoto
发明人： Kazuo Maeda , Noboru Tokumasu , Yuko Nishimoto
IPC分类号： H01L21/3105 , H01L21/316 , H01L21/02
CPC分类号： H01L21/02164 , H01L21/02271 , H01L21/0228 , H01L21/0234 , H01L21/3105 , H01L21/31662 , Y10S148/118
摘要： A, method for forming semiconductor device, includes forming an insulating film on a body by chemical vapor deposition, at low temperature raising the temperature of, the body, and exposing the body to plasma gas.
摘要翻译： A，形成半导体器件的方法包括：通过化学气相沉积在体上形成绝缘膜，在低温下使身体的温度升高，并使身体暴露于等离子体气体。

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