专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5834730A Plasma processing equipment and gas discharging device 失效
标题翻译：等离子体处理设备和排气装置
公开(公告)号：US5834730A
公开(公告)日：1998-11-10
申请号：US792138
申请日：1997-01-31
申请人： Setsu Suzuki , Noboru Tokumasu , Kazuo Maeda , Junichi Aoki
发明人： Setsu Suzuki , Noboru Tokumasu , Kazuo Maeda , Junichi Aoki
IPC分类号： H01J37/32 , B23K10/00
CPC分类号： H01J37/32009 , H01J37/32082
摘要： A gas discharging device is provided which has a function as one of opposing electrodes to plasmanize a reaction gas and executes film formation and etching with a plasma gas. The device comprises a base body having a recess portion at its central portion and a through-hole for introducing a gas into the recess portion, a gas distributing plate provided in the recess portion for introducing the gas in a radial direction, and an annular gas discharging member for discharging the gas introduced by the gas distributing plate.
摘要翻译：提供一种气体放电装置，其具有用于使反应气体质量化的相对电极之一的功能，并且利用等离子体气体执行成膜和蚀刻。该装置包括在其中心部分具有凹部的基体和用于将气体引入凹部的通孔，设置在凹部中的用于沿径向引入气体的气体分配板，以及环形气体用于排出由气体分配板引入的气体的排出构件。

2. 发明授权

US5800877A Method for forming a fluorine containing silicon oxide film 失效
标题翻译：含氟氧化硅膜的形成方法
公开(公告)号：US5800877A
公开(公告)日：1998-09-01
申请号：US694660
申请日：1996-08-09
申请人： Kazuo Maeda , Noboru Tokumasu , Yoshiaki Yuyama
发明人： Kazuo Maeda , Noboru Tokumasu , Yoshiaki Yuyama
IPC分类号： H01L21/31 , C23C16/40 , H01L21/316 , C23C16/42 , H05H1/00
CPC分类号： H01L21/02131 , C23C16/401 , H01L21/02271 , H01L21/0234 , H01L21/31629
摘要： In a method for forming a film by thermal CVD, a fluorine-containing silicon oxide film is formed on a substrate by thermal reaction of a mixed gas while heating the substrate. The mixed gas includes an organic silane having a Si-F bond, an organic silane having no Si-F bond, and ozone.
摘要翻译：在通过热CVD形成膜的方法中，在加热基板的同时通过混合气体的热反应在基板上形成含氟氧化硅膜。混合气体包括具有Si-F键的有机硅烷，不具有Si-F键的有机硅烷和臭氧。

3. 发明授权

US5231058A Process for forming CVD film and semiconductor device 失效
标题翻译：用于形成CVD膜和半导体器件的方法
公开(公告)号：US5231058A
公开(公告)日：1993-07-27
申请号：US628237
申请日：1990-12-14
申请人： Kazuo Maeda , Noboru Tokumasu , Yuko Nishimoto
发明人： Kazuo Maeda , Noboru Tokumasu , Yuko Nishimoto
IPC分类号： C23C16/40 , H01L21/316
CPC分类号： H01L21/02271 , C23C16/401 , H01L21/02129 , H01L21/02164 , H01L21/02216 , H01L21/31612 , H01L21/31625
摘要： In a process for forming a CVD film, a polysiloxane compound having at least two silicon-oxygen bonds is reacted with ozone to form an SiO.sub.2 film. If desired, the reaction may be effected in the presence of a gas containing an impurity mixed with the polysiloxane compound and ozone to form a PSG, BSG or BPSG film. In a semiconductor device, the SiO.sub.2 film, or the PSG, BSG or BPSG film is used as a planarizing film, an interlayer insulating film, or a cover insulating film.

4. 发明授权

US4731255A Gas-phase growth process and an apparatus for the same 失效
标题翻译：气相生长过程及其设备
公开(公告)号：US4731255A
公开(公告)日：1988-03-15
申请号：US780205
申请日：1985-09-26
申请人： Kazuo Maeda , Noboru Tokumasu , Toshihiko Fukuyama , Tsugiaki Hirata
发明人： Kazuo Maeda , Noboru Tokumasu , Toshihiko Fukuyama , Tsugiaki Hirata
IPC分类号： B05D3/06 , B05D7/24 , C23C16/44 , C23C16/455 , C23C16/48 , C30B25/10 , C30B25/14
CPC分类号： C23C16/45504 , B05D1/60 , C23C16/455 , C23C16/482 , C23C16/488 , C30B25/105 , C30B25/14 , B05D3/061
摘要： A gas-phase growth process for growing films of uniform thickness or having a prescribed pattern form or growing films sequentially onto a substrate and an apparatus related thereto. The films are grown by allowing an inert gas to flow over a reaction gas flow in parallel to the surface of the substrate. Optionally, the substrate surface could be irradiated by a UV light source which is directed from above the inert gas toward the substrate surface.
摘要翻译：用于生长均匀厚度的膜或具有规定图案形式的膜或顺序生长膜到基板上的气相生长工艺和与其相关的装置。通过使惰性气体平行于衬底的表面流过反应气体流而生长膜。任选地，可以通过从惰性气体上方向衬底表面引导的UV光源照射衬底表面。

5. 发明授权

US4702936A Gas-phase growth process 失效
标题翻译：气相生长过程
公开(公告)号：US4702936A
公开(公告)日：1987-10-27
申请号：US778004
申请日：1985-09-20
申请人： Kazuo Maeda , Noboru Tokumasu , Toshihiko Fukuyama
发明人： Kazuo Maeda , Noboru Tokumasu , Toshihiko Fukuyama
IPC分类号： C23C16/30 , C23C16/34 , C23C16/40 , C23C16/48 , C30B25/02 , B05D3/06
CPC分类号： C23C16/482 , C23C16/308 , C23C16/345 , C23C16/401 , C23C16/402 , C30B25/02
摘要： A gas-phase growth process for forming a film of SiO.sub.2 Si.sub.3 N.sub.4 or Si.sub.x O.sub.y N.sub.z, which comprises reacting a mixture of an organic or inorganic silane with one or more reaction gases comprising O.sub.2, N.sub.2 O, NO.sub.2 NO, CO.sub.2 CO and NH.sub.3, with the proviso that the mixture of inorganic silane and O.sub.2 is excluded as a reaction gas combination of the present invention. The process comprises feeding a reaction gas into a reaction chamber which is kept at a reaction temperature below 500.degree. C., and subjecting the surface of a substrate chamber which is placed in the reaction chamber to UV irradiation. This irradiation excites the reaction gas, which allows a low-temperature gas-phase growth to proceed. The photo-excitation occurs selectively only at UV-irradiated sections, so that a film growth may occur selectively on the substrate surface within the range of UV irradiation. The optional use of a suitable mask allows a film of a prescribed pattern to be formed on the substrate surface.
摘要翻译：一种用于形成SiO 2 + L，Si 3 N 4或SixO y N z的膜的气相生长方法，其包括将有机或无机硅烷的混合物与一种或多种包含O 2，N 2 O，NO 2 + L，NO，CO 2 + L的反应气体，CO和NH 3，条件是排除无机硅烷和O 2的混合物作为本发明的反应气体组合。该方法包括将反应气体进料到保持在低于500℃的反应温度的反应室中，并将放置在反应室中的基板室的表面进行紫外线照射。该照射激发反应气体，这允许进行低温气相生长。光激发仅在UV照射部分选择性地发生，从而在UV照射的范围内，可以在衬底表面上选择性地发生膜生长。可选地使用合适的掩模允许在基板表面上形成规定图案的膜。

6. 发明授权

US5554570A Method of forming insulating film 失效
标题翻译：形成绝缘膜的方法
公开(公告)号：US5554570A
公开(公告)日：1996-09-10
申请号：US370247
申请日：1995-01-09
申请人： Kazuo Maeda , Noboru Tokumasu , Yoshiaki Yuyama
发明人： Kazuo Maeda , Noboru Tokumasu , Yoshiaki Yuyama
IPC分类号： C23C16/50 , C23C16/40 , H01L21/31 , H01L21/316
CPC分类号： H01L21/02164 , C23C16/402 , H01L21/0214 , H01L21/022 , H01L21/02216 , H01L21/02271 , H01L21/02274 , H01L21/31608
摘要： The present invention relates to a film forming method of forming a silicon containing insulating film by plasma CVD. Objects of the present invention are to form, using a highly safe reaction gas, an insulating film which is dense, has excellent step coverage and is low in moisture and in organic residues such as carbon. The insulating film has good affinity for the silicon oxide film formed by the thermal CVD method. The invention also enables control of the refractive index and stress etc. of the insulating film formed. The mixed gas, including the organic compound having Si-H bonds and the oxidizing gas, is converted to a plasma and the silicon containing insulating film is formed on a deposition substrate from the plasma.
摘要翻译：本发明涉及通过等离子体CVD形成含硅绝缘膜的成膜方法。本发明的目的是使用高度安全的反应气体形成致密的绝缘膜，具有优异的台阶覆盖度和低水分以及有机残余物如碳。绝缘膜对通过热CVD法形成的氧化硅膜具有良好的亲合性。本发明还能够控制形成的绝缘膜的折射率和应力等。包括具有Si-H键的有机化合物和氧化气体的混合气体被转换成等离子体，并且含硅绝缘膜由等离子体形成在沉积基板上。

7. 发明授权

US5484749A Manufacturing method of semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US5484749A
公开(公告)日：1996-01-16
申请号：US416488
申请日：1995-04-04
申请人： Kazuo Maeda , Noboru Tokumasu , Yuko Nishimoto
发明人： Kazuo Maeda , Noboru Tokumasu , Yuko Nishimoto
IPC分类号： C23C16/02 , C23C16/34 , C23C16/40 , H01L21/302 , H01L21/3065 , H01L21/316 , H01L21/02
CPC分类号： H01L21/02129 , C23C16/401 , H01L21/02164 , H01L21/02271 , H01L21/02315 , H01L21/31612 , H01L21/31625 , Y10S438/974
摘要： The present invention provides a method of manufacturing a semiconductor device, characterized in that, after a surface of a substrate is reformed by high frequency plasma irradiation while the substrate is heated, an organic silane and ozone are reacted to form a silicon oxide film on the substrate under normal pressure or reduced pressure. The present invention also provides a method of manufacturing a semiconductor device, characterized in that, after a surface of a substrate is reformed by high frequency plasma irradiation while heating the substrate, organic silane, gas containing dopants such as phosphorus or boron and ozone are mixed, and a PSG film, a BSG film, a BPSG film or the like is formed on the substrate under normal pressure or reduced pressure.
摘要翻译：本发明提供了一种制造半导体器件的方法，其特征在于，在衬底被加热之后，通过高频等离子体照射重整衬底的表面之后，使有机硅烷和臭氧反应以形成氧化硅膜基材在常压或减压下。本发明还提供一种制造半导体器件的方法，其特征在于，在加热衬底之后，通过高频等离子体照射重整衬底的表面之后，混入有机硅烷，含有掺杂剂如磷或硼和臭氧的气体在正常压力或减压下在基板上形成PSG膜，BSG膜，BPSG膜等。

8. 发明授权

US5314538A Apparatus for manufacturing semiconductor device and method for manufacturing semiconductor device 失效
标题翻译：半导体装置的制造装置及半导体装置的制造方法
公开(公告)号：US5314538A
公开(公告)日：1994-05-24
申请号：US958105
申请日：1992-12-22
申请人： Kazuo Maeda , Noboru Tokumasu , Yuhko Nishimoto
发明人： Kazuo Maeda , Noboru Tokumasu , Yuhko Nishimoto
IPC分类号： H01L21/205 , C23C16/48 , C23C16/54 , C23C16/56 , H01L21/00 , H01L21/3105 , H01L21/316 , H01L21/324 , H01L21/677 , H01L21/683 , H01L21/768 , C23C16/00
CPC分类号： H01L21/67167 , C23C16/481 , C23C16/54 , C23C16/56 , H01L21/02129 , H01L21/02271 , H01L21/02304 , H01L21/02337 , H01L21/02345 , H01L21/02348 , H01L21/3105 , H01L21/31625 , H01L21/324 , H01L21/67017 , H01L21/67103 , H01L21/67207 , H01L21/76819 , Y10S414/135 , Y10S414/141 , Y10T29/41
摘要： An apparatus and method for manufacturing a semiconductor device capable of forming a single layer film or a multilayer film of improved quality by continuously processing without exposure of the wafer to the ambient air. The apparatus includes a film forming section having a gas dispersion unit for supplying reaction gas, a processing section for processing the formed film and a wafer holder for holding a wafer facing the gas dispersion unit or the processing section. The wafer holder moves the wafer between the film forming section and the processing section while heating the wafer by a heating element contained therein.
摘要翻译： PCT No.PCT / JP92 / 00468 Sec。 371日期1992年12月22日 102（e）1992年12月22日的PCT日期1992年4月14日PCT。一种制造半导体器件的装置和方法，该半导体器件能够通过在不暴露晶片的情况下连续加工来形成质量提高的单层膜或多层膜环境空气。该装置包括具有用于供应反应气体的气体分散单元的膜形成部分，用于处理所形成的膜的处理部分和用于保持面向气体分散单元或处理部分的晶片的晶片保持器。晶片保持器在成膜部分和处理部分之间移动晶片，同时通过其中包含的加热元件加热晶片。

9. 发明授权

US5051380A Process for producing semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US5051380A
公开(公告)日：1991-09-24
申请号：US628510
申请日：1990-12-14
申请人： Kazuo Maeda , Noboru Tokumasu , Yuko Nishimoto
发明人： Kazuo Maeda , Noboru Tokumasu , Yuko Nishimoto
IPC分类号： C23C16/40 , H01L21/316
CPC分类号： H01L21/02164 , C23C16/402 , H01L21/022 , H01L21/02271 , H01L21/31612 , Y10S148/118
摘要： In a process for producing a semiconductor device, deposition of a CVD-SiO.sub.2 film at a given first O.sub.3 concentration according to a TEOS-SiO.sub.3 reaction is followed by further deposition of a CVD-SiO.sub.2 film at a second O.sub.3 concentration higher than the first O.sub.3 concentration according to the TEOS-O.sub.3 reaction to form a CVD-SiO.sub.2 film having a predetermined thickness and a surface little uneven.

10. 发明授权

US6110814A Film forming method and semiconductor device manufacturing method 失效
标题翻译：成膜方法和半导体器件的制造方法
公开(公告)号：US6110814A
公开(公告)日：2000-08-29
申请号：US330052
申请日：1999-06-11
申请人： Noboru Tokumasu , Kazuo Maeda
发明人： Noboru Tokumasu , Kazuo Maeda
IPC分类号： H01L21/31 , C23C16/40 , C23C16/56 , H01L21/3105 , H01L21/316 , H01L21/768 , H01L21/4763
CPC分类号： H01L21/76819 , C23C16/401 , C23C16/56 , H01L21/31051
摘要： The present invention relates to a film forming method for forming a planarized interlayer insulating film to cover wiring layers, etc. of a semiconductor integrated circuit device. The method includes the steps of forming on a substrate 206, a phosphorus-containing insulating film 45a containing P.sub.2 O.sub.3 by using a film forming gas in which an oxidizing. gas is added into a gas mixture including a phosphorus-containing compound, which has III valence phosphorus and in which oxygen is bonded to at least one bond of the III valence phosphorus, and silicon-containing compound, or by using the film forming gas from which the oxidizing gas removed, heating the phosphorus-containing insulating film 45a while applying acceleration to the insulating film 45a to fluidize the insulating film and thus planarize a surface of the insulating film 45b while the insulating film 45a has a predetermined viscosity, and heating further the insulating film 45b after the surface of the insulating film 45b has been planarized, to sublimate P.sub.2 O.sub.3 in the insulating film 45b and thus solidify the insulating film 45b.
摘要翻译：本发明涉及一种用于形成半导体集成电路器件的布线层等的平坦化层间绝缘膜的成膜方法。该方法包括以下步骤：通过使用其中进行氧化的成膜气体，在基板206上形成含有P 2 O 3的含磷绝缘膜45a。将气体加入到含有III价态的磷的含磷化合物的气体混合物中，其中氧与III价态的磷的至少一个键结合，并且含硅化合物，或者通过使用成膜气体从除去氧化气体，同时加热含磷绝缘膜45a，同时对绝缘膜45a施加加速度，使绝缘膜流化，从而使绝缘膜45b的表面平坦化，同时绝缘膜45a具有预定的粘度，并进一步加热绝缘膜45b的表面之后的绝缘膜45b被平坦化，以使绝缘膜45b中的P2O3升华，从而固化绝缘膜45b。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式