专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120187335A1 WET ETCHANTS INCLUDING AT LEAST ONE ETCH BLOCKER 有权
标题翻译：包括至少一个蚀刻块的软件包
公开(公告)号：US20120187335A1
公开(公告)日：2012-07-26
申请号：US13413157
申请日：2012-03-06
申请人： Nishant Sinha , J. Neil Greeley
发明人： Nishant Sinha , J. Neil Greeley
IPC分类号： C09K13/08 , C09K13/00
CPC分类号： C09K13/08 , C09K13/06 , H01L21/31055 , H01L21/31111
摘要： Methods for preventing isotropic removal of materials at corners formed by seams, keyholes, and other anomalies in films or other structures include use of etch blockers to cover or coat such corners. This covering or coating prevents exposure of the corners to isotropic etch solutions and cleaning solutions and, thus, prevents higher material removal rates at the corners than at smoother areas of the structure or film. Solutions, including wet etchants and cleaning solutions, that include at least one type of etch blocker are also disclosed, as are systems for preventing higher rates of material removal at corners formed by seams, crevices, or recesses in a film or other structure. Semiconductor device structures in which etch blockers are located so as to prevent isotropic etchants from removing material from corners of seams, crevices, or recesses in a surface of a film or other structure at undesirably high rates are also disclosed.
摘要翻译：在膜或其他结构中由接缝，键孔和其它异常形成的角部处的各向同性物质的各向同性除去方法包括使用蚀刻阻挡剂来覆盖或涂覆这些角。这种覆盖物或涂层防止角部暴露于各向同性蚀刻溶液和清洁溶液，并且因此防止在角部比在结构或膜的平滑区域更高的材料去除速率。还公开了包括至少一种类型的蚀刻阻挡剂的解决方案，包括湿蚀刻剂和清洁溶液，以及用于防止在膜或其它结构中由接缝，缝隙或凹陷形成的拐角处更高速率的材料去除的系统。还公开了其中蚀刻阻挡剂被定位以防止各向同性蚀刻剂从不期望的高速率的膜或其它结构的表面中的接缝，裂缝或凹陷的角落移除材料的半导体器件结构。

2. 发明授权

US08729002B2 Wet etchants including at least one etch blocker 有权
标题翻译：湿蚀刻剂包括至少一个蚀刻阻挡剂
公开(公告)号：US08729002B2
公开(公告)日：2014-05-20
申请号：US13413157
申请日：2012-03-06
申请人： Nishant Sinha , J. Neil Greeley
发明人： Nishant Sinha , J. Neil Greeley
IPC分类号： C25F3/02
CPC分类号： C09K13/08 , C09K13/06 , H01L21/31055 , H01L21/31111
摘要： Methods for preventing isotropic removal of materials at corners formed by seams, keyholes, and other anomalies in films or other structures include use of etch blockers to cover or coat such corners. This covering or coating prevents exposure of the corners to isotropic etch solutions and cleaning solutions and, thus, prevents higher material removal rates at the corners than at smoother areas of the structure or film. Solutions, including wet etchants and cleaning solutions, that include at least one type of etch blocker are also disclosed, as are systems for preventing higher rates of material removal at corners formed by seams, crevices, or recesses in a film or other structure. Semiconductor device structures in which etch blockers are located so as to prevent isotropic etchants from removing material from corners of seams, crevices, or recesses of a film or other structure at undesirably high rates are also disclosed.
摘要翻译：在膜或其他结构中由接缝，键孔和其它异常形成的角部处的各向同性物质的各向同性除去方法包括使用蚀刻阻挡剂来覆盖或涂覆这些角。这种覆盖物或涂层防止角部暴露于各向同性蚀刻溶液和清洁溶液，并且因此防止在角部比在结构或膜的平滑区域更高的材料去除速率。还公开了包括至少一种类型的蚀刻阻挡剂的解决方案，包括湿蚀刻剂和清洁溶液，以及用于防止在膜或其它结构中由接缝，缝隙或凹陷形成的拐角处更高速率的材料去除的系统。还公开了其中蚀刻阻挡剂被定位以防止各向同性蚀刻剂从不期望的高速率的接缝，裂缝或膜或其它结构的凹陷的角落移除材料的半导体器件结构。

3. 发明申请

US20090042401A1 COMPOSITIONS AND METHODS FOR SUBSTANTIALLY EQUALIZING RATES AT WHICH MATERIAL IS REMOVED OVER AN AREA OF A STRUCTURE OR FILM THAT INCLUDES RECESSES OR CREVICES 有权
标题翻译：用于大量均衡化的材料的组合物和方法，其材料在包括封面或构件的结构或膜片的区域中被移除
公开(公告)号：US20090042401A1
公开(公告)日：2009-02-12
申请号：US11834258
申请日：2007-08-06
申请人： Nishant Sinha , J. Neil Greeley
发明人： Nishant Sinha , J. Neil Greeley
IPC分类号： H01L21/302 , B32B9/06 , C09K13/00
CPC分类号： C09K13/08 , C09K13/06 , H01L21/31055 , H01L21/31111
摘要： Methods for preventing isotropic removal of materials at corners formed by seams, keyholes, and other anomalies in films or other structures include use of etch blockers to cover or coat such corners. This covering or coating prevents exposure of the corners to isotropic etch solutions and cleaning solutions and, thus, higher material removal rates at the corners than at smoother areas of the structure or film from which material is removed. Solutions, including wet etchants and cleaning solutions, that include at least one type of etch blocker are also disclosed, as are systems for preventing higher rates of material removal at corners formed by seams, crevices, or recesses in a film or other structure. Semiconductor device structures in which etch blockers are located so as to prevent isotropic etchants from removing material from corners of seams, crevices, or recesses in a surface of a film or other structure at undesirably high rates are also disclosed.
摘要翻译：在膜或其他结构中由接缝，键孔和其它异常形成的角部处的各向同性物质的各向同性除去方法包括使用蚀刻阻挡剂来覆盖或涂覆这些角。这种覆盖物或涂层防止角部暴露于各向同性蚀刻溶液和清洁溶液，并且因此在除去材料的结构或膜的更光滑的区域处在角部处更高的材料去除速率。还公开了包括至少一种类型的蚀刻阻挡剂的解决方案，包括湿蚀刻剂和清洁溶液，以及用于防止在膜或其它结构中由接缝，缝隙或凹陷形成的拐角处更高速率的材料去除的系统。还公开了其中蚀刻阻挡剂被定位以防止各向同性蚀刻剂从不期望的高速率的膜或其它结构的表面中的接缝，裂缝或凹陷的角落移除材料的半导体器件结构。

4. 发明授权

US08153019B2 Methods for substantially equalizing rates at which material is removed over an area of a structure or film that includes recesses or crevices 有权
标题翻译：用于在包括凹陷或缝隙的结构或膜的区域上去除材料的速率基本相等的方法
公开(公告)号：US08153019B2
公开(公告)日：2012-04-10
申请号：US11834258
申请日：2007-08-06
申请人： Nishant Sinha , J. Neil Greeley
发明人： Nishant Sinha , J. Neil Greeley
IPC分类号： C09K13/08 , C11D7/28
CPC分类号： C09K13/08 , C09K13/06 , H01L21/31055 , H01L21/31111
摘要： Methods for preventing isotropic removal of materials at corners formed by seams, keyholes, and other anomalies in films or other structures include use of etch blockers to cover or coat such corners. This covering or coating prevents exposure of the corners to isotropic etch solutions and cleaning solutions and, thus, prevents higher material removal rates at the corners than at smoother areas of the structure or film from which material is removed. Solutions, including wet etchants and cleaning solutions, that include at least one type of etch blocker are also disclosed, as are systems for preventing higher rates of material removal at corners formed by seams, crevices, or recesses in a film or other structure. Semiconductor device structures in which etch blockers are located so as to prevent isotropic etchants from removing material from corners of seams, crevices, or recesses in a surface of a film or other structure at undesirably high rates are also disclosed.
摘要翻译：在膜或其他结构中由接缝，键孔和其它异常形成的角部处的各向同性物质的各向同性除去方法包括使用蚀刻阻挡剂来覆盖或涂覆这些角。这种覆盖物或涂层防止角部暴露于各向同性蚀刻溶液和清洁溶液，并且因此防止在角质层处更高的材料去除速率，而不是从其中去除材料的结构或膜的更光滑的区域。还公开了包括至少一种类型的蚀刻阻挡剂的解决方案，包括湿蚀刻剂和清洁溶液，以及用于防止在膜或其它结构中由接缝，缝隙或凹陷形成的拐角处更高速率的材料去除的系统。还公开了其中蚀刻阻挡剂被定位以防止各向同性蚀刻剂从不期望的高速率的膜或其它结构的表面中的接缝，裂缝或凹陷的角落移除材料的半导体器件结构。

5. 发明授权

US09005473B2 Gaseous compositions comprising hydrogen fluoride and an alkylated ammonia derivative 有权
标题翻译：包含氟化氢和烷基化氨衍生物的气态组合物
公开(公告)号：US09005473B2
公开(公告)日：2015-04-14
申请号：US13570866
申请日：2012-08-09
申请人： Mark W. Kiehlbauch , J. Neil Greeley , Paul A. Morgan
发明人： Mark W. Kiehlbauch , J. Neil Greeley , Paul A. Morgan
IPC分类号： C07F7/02 , H01L21/311 , H01L21/033
CPC分类号： H01L21/31116 , H01L21/0337
摘要： A method of removing at least a portion of a silicon oxide material is disclosed. The silicon oxide is removed by exposing a semiconductor structure comprising a substrate and the silicon oxide to an ammonium fluoride chemical treatment and a subsequent plasma treatment, both of which may be effected in the same vacuum chamber of a processing apparatus. The ammonium fluoride chemical treatment converts the silicon oxide to a solid reaction product in a self-limiting reaction, the solid reaction product then being volatilized by the plasma treatment. The plasma treatment includes a plasma having an ion bombardment energy of less than or equal to approximately 20 eV. An ammonium fluoride chemical treatment including an alkylated ammonia derivative and hydrogen fluoride is also disclosed.
摘要翻译：公开了一种去除至少一部分氧化硅材料的方法。通过将包括衬底和氧化硅的半导体结构暴露于氟化铵化学处理和随后的等离子体处理中去除氧化硅，二者都可以在处理设备的相同真空室中进行。氟化铵化学处理在自限制反应中将氧化硅转化为固体反应产物，然后固体反应产物通过等离子体处理而挥发。等离子体处理包括具有小于或等于约20eV的离子轰击能的等离子体。还公开了包括烷基化氨衍生物和氟化氢的氟化铵化学处理。

6. 发明授权

US08097175B2 Method for selectively permeating a self-assembled block copolymer, method for forming metal oxide structures, method for forming a metal oxide pattern, and method for patterning a semiconductor structure 有权
标题翻译：用于选择性渗透自组装嵌段共聚物的方法，用于形成金属氧化物结构的方法，形成金属氧化物图案的方法和用于图案化半导体结构的方法
公开(公告)号：US08097175B2
公开(公告)日：2012-01-17
申请号：US12259921
申请日：2008-10-28
申请人： Dan B. Millward , Timothy A. Quick , J. Neil Greeley
发明人： Dan B. Millward , Timothy A. Quick , J. Neil Greeley
IPC分类号： H01L21/302 , B82Y40/00
CPC分类号： H01L21/0271 , B82Y10/00 , B82Y40/00 , C08L53/00 , C08L53/005 , C09D153/00 , C09D153/005 , G03F7/0002 , H01L21/02323 , H01L21/28 , H01L29/06 , Y10S438/947 , Y10S977/888 , Y10S977/89 , C08L2666/02
摘要： Methods of forming metal oxide structures and methods of forming metal oxide patterns on a substrate using a block copolymer system formulated for self-assembly. The metal oxide structures and patterns may be used, for example, as a mask for sublithographic patterning during various stages of semiconductor device fabrication. A block copolymer at least within a trench in the substrate and including at least one soluble block and at least one insoluble block may be annealed to form a self-assembled pattern including a plurality of repeating units of the at least one soluble block laterally aligned with the trench and positioned within a matrix of the at least one insoluble block. The self-assembled pattern may be exposed to a metal oxide precursor that impregnates the at least one soluble block. The metal oxide precursor may be oxidized to form a metal oxide. The self-assembled pattern may be removed to form a pattern of metal oxide lines on the substrate surface.
摘要翻译：使用配制用于自组装的嵌段共聚物体系形成金属氧化物结构的方法和在基材上形成金属氧化物图案的方法。金属氧化物结构和图案可以用作例如在半导体器件制造的各个阶段期间用于亚光刻图案的掩模。至少在衬底中的沟槽内并且包括至少一个可溶性嵌段和至少一个不溶性嵌段的嵌段共聚物可以被退火以形成自组装图案，其包括多个与所述至少一个可溶嵌段的重复单元横向对准并且定位在所述至少一个不溶性块的基质内。自组装图案可以暴露于浸渍至少一个可溶性嵌段的金属氧化物前体。金属氧化物前体可以被氧化以形成金属氧化物。可以去除自组装图案以在衬底表面上形成金属氧化物线的图案。

7. 发明授权

US08252194B2 Methods of removing silicon oxide 有权
标题翻译：去除氧化硅的方法
公开(公告)号：US08252194B2
公开(公告)日：2012-08-28
申请号：US12114380
申请日：2008-05-02
申请人： Mark W. Kiehlbauch , J. Neil Greeley , Paul A. Morgan
发明人： Mark W. Kiehlbauch , J. Neil Greeley , Paul A. Morgan
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01L21/0337
摘要： A method of removing at least a portion of a silicon oxide material is disclosed. The silicon oxide is removed by exposing a semiconductor structure comprising a substrate and the silicon oxide to an ammonium fluoride chemical treatment and a subsequent plasma treatment, both of which may be effected in the same vacuum chamber of a processing apparatus. The ammonium fluoride chemical treatment converts the silicon oxide to a solid reaction product in a self-limiting reaction, the solid reaction product then being volatilized by the plasma treatment. The plasma treatment includes a plasma having an ion bombardment energy of less than or equal to approximately 20 eV. An ammonium fluoride chemical treatment including an alkylated ammonia derivative and hydrogen fluoride is also disclosed.
摘要翻译：公开了一种去除至少一部分氧化硅材料的方法。通过将包括衬底和氧化硅的半导体结构暴露于氟化铵化学处理和随后的等离子体处理中去除氧化硅，二者都可以在处理设备的相同真空室中进行。氟化铵化学处理在自限制反应中将氧化硅转化为固体反应产物，然后固体反应产物通过等离子体处理而挥发。等离子体处理包括具有小于或等于约20eV的离子轰击能的等离子体。还公开了包括烷基化氨衍生物和氟化氢的氟化铵化学处理。

8. 发明申请

US20120309999A1 AMMONIUM FLUORIDE CHEMISTRIES 有权
标题翻译：氟化铵化学品
公开(公告)号：US20120309999A1
公开(公告)日：2012-12-06
申请号：US13570866
申请日：2012-08-09
申请人： Mark W. Kiehlbauch , J. Neil Greeley , Paul A. Morgan
发明人： Mark W. Kiehlbauch , J. Neil Greeley , Paul A. Morgan
IPC分类号： C07F7/02
CPC分类号： H01L21/31116 , H01L21/0337
摘要： A method of removing at least a portion of a silicon oxide material is disclosed. The silicon oxide is removed by exposing a semiconductor structure comprising a substrate and the silicon oxide to an ammonium fluoride chemical treatment and a subsequent plasma treatment, both of which may be effected in the same vacuum chamber of a processing apparatus. The ammonium fluoride chemical treatment converts the silicon oxide to a solid reaction product in a self-limiting reaction, the solid reaction product then being volatilized by the plasma treatment. The plasma treatment includes a plasma having an ion bombardment energy of less than or equal to approximately 20 eV. An ammonium fluoride chemical treatment including an alkylated ammonia derivative and hydrogen fluoride is also disclosed.
摘要翻译：公开了一种去除至少一部分氧化硅材料的方法。通过将包括衬底和氧化硅的半导体结构暴露于氟化铵化学处理和随后的等离子体处理中去除氧化硅，二者都可以在处理设备的相同真空室中进行。氟化铵化学处理在自限制反应中将氧化硅转化为固体反应产物，然后固体反应产物通过等离子体处理而挥发。等离子体处理包括具有小于或等于约20eV的离子轰击能的等离子体。还公开了包括烷基化氨衍生物和氟化氢的氟化铵化学处理。

9. 发明申请

US20100102415A1 METHODS FOR SELECTIVE PERMEATION OF SELF-ASSEMBLED BLOCK COPOLYMERS WITH METAL OXIDES, METHODS FOR FORMING METAL OXIDE STRUCTURES, AND SEMICONDUCTOR STRUCTURES INCLUDING SAME 有权
标题翻译：用于金属氧化物的自组装块状共聚物的选择性渗透方法，形成金属氧化物结构的方法和包括其的半导体结构
公开(公告)号：US20100102415A1
公开(公告)日：2010-04-29
申请号：US12259921
申请日：2008-10-28
申请人： Dan B. Millward , Timothy A. Quick , J. Neil Greeley
发明人： Dan B. Millward , Timothy A. Quick , J. Neil Greeley
IPC分类号： H01L21/28 , H01L27/00
CPC分类号： H01L21/0271 , B82Y10/00 , B82Y40/00 , C08L53/00 , C08L53/005 , C09D153/00 , C09D153/005 , G03F7/0002 , H01L21/02323 , H01L21/28 , H01L29/06 , Y10S438/947 , Y10S977/888 , Y10S977/89 , C08L2666/02
摘要： Methods of forming metal oxide structure and methods of forming metal oxide patterns on a substrate using a block copolymer system formulated for self-assembly are disclosed. The metal oxide structures and patterns may be used, for example, as a mask for sublithographic patterning during various stages of semiconductor device fabrication. A block copolymer at least within a trench in the substrate and including at least one soluble block and at least one insoluble block may be annealed to form a self-assembled pattern including a plurality of repeating units of the soluble block laterally aligned with the trench and positioned within a matrix of the insoluble block. The self-assembled pattern may be exposed to a metal oxide precursor which impregnates the soluble block. The metal oxide precursor may be oxidized to form a metal oxide. The self-assembled pattern may be removed to form a pattern of metal oxide lines on the substrate surface.
摘要翻译：公开了使用配制用于自组装的嵌段共聚物体系形成金属氧化物结构的方法和在基材上形成金属氧化物图案的方法。金属氧化物结构和图案可以用作例如在半导体器件制造的各个阶段期间用于亚光刻图案的掩模。至少在衬底中的沟槽内并且包括至少一个可溶嵌段和至少一个不溶性嵌段的嵌段共聚物可以退火以形成自组装图案，其包括多个与沟槽横向对准的可溶性嵌段的重复单元，位于不溶性块的基质内。自组装图案可能暴露于浸渍可溶性块的金属氧化物前体。金属氧化物前体可以被氧化以形成金属氧化物。可以去除自组装图案以在衬底表面上形成金属氧化物线的图案。

10. 发明申请

US20090275205A1 METHODS OF REMOVING SILICON OXIDE AND GASEOUS MIXTURES FOR ACHIEVING SAME 有权
标题翻译：去除氧化硅和气相混合物的方法
公开(公告)号：US20090275205A1
公开(公告)日：2009-11-05
申请号：US12114380
申请日：2008-05-02
申请人： Mark W. Kiehlbauch , J. Neil Greeley , Paul A. Morgan
发明人： Mark W. Kiehlbauch , J. Neil Greeley , Paul A. Morgan
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01L21/0337
摘要： A method of removing at least a portion of a silicon oxide material is disclosed. The silicon oxide is removed by exposing a semiconductor structure comprising a substrate and the silicon oxide to an ammonium fluoride chemical treatment and a subsequent plasma treatment, both of which may be effected in the same vacuum chamber of a processing apparatus. The ammonium fluoride chemical treatment converts the silicon oxide to a solid reaction product in a self-limiting reaction, the solid reaction product then being volatilized by the plasma treatment. The plasma treatment includes a plasma having an ion bombardment energy of less than or equal to approximately 20 eV. An ammonium fluoride chemical treatment including an alkylated ammonia derivative and hydrogen fluoride is also disclosed.
摘要翻译：公开了一种去除至少一部分氧化硅材料的方法。通过将包括衬底和氧化硅的半导体结构暴露于氟化铵化学处理和随后的等离子体处理中去除氧化硅，二者都可以在处理设备的相同真空室中进行。氟化铵化学处理在自限制反应中将氧化硅转化为固体反应产物，然后固体反应产物通过等离子体处理而挥发。等离子体处理包括具有小于或等于约20eV的离子轰击能的等离子体。还公开了包括烷基化氨衍生物和氟化氢的氟化铵化学处理。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式