会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 7. 发明授权
    • Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip
    • 光电半导体芯片及其制造方法
    • US08816353B2
    • 2014-08-26
    • US13138034
    • 2009-11-02
    • Nikolaus GmeinwieserMatthias SabathilAndreas Leber
    • Nikolaus GmeinwieserMatthias SabathilAndreas Leber
    • H01L29/15H01L21/00H01L33/22
    • H01L33/22
    • In at least one embodiment of the optoelectronic semiconductor chip (1), the latter comprises a semiconductor layer sequence (2) comprising at least one active layer (3) designed for generating an electromagnetic radiation. Furthermore, the optoelectronic semiconductor chip (1) has coupling-out structures (4), which are fitted at least indirectly on a radiation passage area (20) of the semiconductor layer sequence (2). In this case, a material of the coupling-out structures (4) is different than a material of the semiconductor layer sequence (2). The refractive indices of the materials of the coupling-out structures (4) and of the semiconductor layer sequence (2) deviate from one another by at most 30%. Furthermore, facets (40) of the coupling-out structures (4) have a total area amounting to at least 30% of an area content of the radiation passage area (20).
    • 在光电半导体芯片(1)的至少一个实施例中,后者包括半导体层序列(2),其包括设计用于产生电磁辐射的至少一个有源层(3)。 此外,光电子半导体芯片(1)具有耦合输出结构(4),其至少间接地配合在半导体层序列(2)的辐射通道区域(20)上。 在这种情况下,耦合结构(4)的材料与半导体层序列(2)的材料不同。 耦合出结构(4)和半导体层序列(2)的材料的折射率彼此相差至多30%。 此外,耦合结构(4)的小面(40)具有相当于辐射通过区域(20)的面积含量的至少30%的总面积。
    • 9. 发明申请
    • Optoelectronic Semiconductor Chip and Method for Producing an Optoelectronic Semiconductor Chip
    • 光电半导体芯片及其制造方法
    • US20120146044A1
    • 2012-06-14
    • US13138034
    • 2009-11-02
    • Nikolaus GmeinwieserMatthias SabathilAndreas Leber
    • Nikolaus GmeinwieserMatthias SabathilAndreas Leber
    • H01L33/02H01L33/58
    • H01L33/22
    • In at least one embodiment of the optoelectronic semiconductor chip (1), the latter comprises a semiconductor layer sequence (2) comprising at least one active layer (3) designed for generating an electromagnetic radiation. Furthermore, the optoelectronic semiconductor chip (1) has coupling-out structures (4), which are fitted at least indirectly on a radiation passage area (20) of the semiconductor layer sequence (2). In this case, a material of the coupling-out structures (4) is different than a material of the semiconductor layer sequence (2). The refractive indices of the materials of the coupling-out structures (4) and of the semiconductor layer sequence (2) deviate from one another by at most 30%. Furthermore, facets (40) of the coupling-out structures (4) have a total area amounting to at least 30% of an area content of the radiation passage area (20).
    • 在光电半导体芯片(1)的至少一个实施例中,后者包括半导体层序列(2),其包括设计用于产生电磁辐射的至少一个有源层(3)。 此外,光电子半导体芯片(1)具有耦合输出结构(4),其至少间接地配合在半导体层序列(2)的辐射通道区域(20)上。 在这种情况下,耦合结构(4)的材料与半导体层序列(2)的材料不同。 耦合出结构(4)和半导体层序列(2)的材料的折射率彼此相差至多30%。 此外,耦合结构(4)的小面(40)具有相当于辐射通过区域(20)的面积含量的至少30%的总面积。