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1. 发明授权

US08686451B2 Optical-electronic component and method for production thereof 有权
标题翻译：光电子部件及其制造方法
公开(公告)号：US08686451B2
公开(公告)日：2014-04-01
申请号：US12865836
申请日：2009-01-19
申请人： Nikolaus Gmeinwieser , Berthold Hahn
发明人： Nikolaus Gmeinwieser , Berthold Hahn
IPC分类号： H01L33/08 , H01L33/46
CPC分类号： H01L25/0756 , H01L33/0079 , H01L33/10 , H01L33/405 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic component (100) comprises a first semiconductor layer stack (101), which has an active layer (110) designed for the emission of radiation and a main area (111). A separating layer (103) is arranged on said main area, said separating layer forming a semitransparent mirror. The optoelectronic component comprises a second semiconductor layer stack (102), which is arranged at the separating layer and which has a further active layer (120) designed for the emission of radiation.
摘要翻译：光电子部件（100）包括第一半导体层堆叠（101），其具有被设计用于发射辐射的有源层（110）和主区域（111）。在所述主区域上设置分离层（103），所述分离层形成半透明反射镜。光电子部件包括第二半导体层堆叠（102），其被布置在分离层处并且具有被设计用于发射辐射的另外的有源层（120）。

2. 发明申请

US20120273824A1 OPTOELECTRONIC SEMICONDUCTOR CHIP 审中-公开
标题翻译：光电子半导体芯片
公开(公告)号：US20120273824A1
公开(公告)日：2012-11-01
申请号：US13517110
申请日：2010-12-15
申请人： Nikolaus Gmeinwieser , Matthias Sabathil , Andreas Leber
发明人： Nikolaus Gmeinwieser , Matthias Sabathil , Andreas Leber
IPC分类号： H01L33/58
CPC分类号： H01L33/42 , H01L33/02 , H01L33/20 , H01L33/22 , H01L33/382 , H01L2224/48091 , H01L2924/00014
摘要： An optoelectronic semiconductor chip includes a semiconductor layer sequence having an active layer and a light-outcoupling layer applied at least indirectly on a radiation permeable surface of the semiconductor layer sequence. A material of the light-outcoupling layer is different from a material of the semiconductor layer sequence and refractive indices of the materials of the light-outcoupling layer and of the semiconductor layer sequence differ from each other by 20% at most. Recesses in the light-outcoupling layer form facets, wherein the recesses do not penetrate the light-outcoupling layer completely. The facets have a total area of at least 25% of an area of the radiation permeable surface.
摘要翻译：光电半导体芯片包括半导体层序列，其具有至少间接地施加在半导体层序列的可辐射透过表面上的有源层和发光耦合层。光输出耦合层的材料与半导体层序列的材料不同，并且光输出耦合层和半导体层序列的材料的折射率最多彼此相差20％。光输出耦合层中的凹陷形成刻面，其中凹部不完全穿透光输出耦合层。小面的总面积为辐射透过面积的至少25％。

3. 发明授权

US08872209B2 Light emitting diode chip 有权
标题翻译：发光二极管芯片
公开(公告)号：US08872209B2
公开(公告)日：2014-10-28
申请号：US13581417
申请日：2011-02-15
申请人： Markus Maute , Karl Engl , Stefanie Rammelsberger , Nikolaus Gmeinwieser , Johann Eibl
发明人： Markus Maute , Karl Engl , Stefanie Rammelsberger , Nikolaus Gmeinwieser , Johann Eibl
IPC分类号： H01L33/60 , H01L33/38 , H01L33/40 , H01L33/20 , H01L33/46
CPC分类号： H01L33/60 , H01L33/20 , H01L33/382 , H01L33/405 , H01L33/46 , H01L33/54 , H01L2924/0002 , H01L2924/00
摘要： A light emitting diode chip includes a semiconductor layer sequence, the semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side. At a rear side lying opposite the radiation exit area, the light emitting diode chip has, at least in regions, a mirror layer containing silver. A functional layer that reduces corrosion and/or improves adhesion of the mirror layer is arranged on the mirror layer, wherein a material from which the functional layer is formed is also distributed in the entire mirror layer. The material of the functional layer has a concentration gradient in the mirror layer, wherein the concentration of the material of the functional layer in the mirror layer decreases proceeding from the functional layer in the direction toward the semiconductor layer sequence.
摘要翻译：发光二极管芯片包括半导体层序列，所述半导体层序列具有产生电磁辐射的有源层，其中所述发光二极管芯片在前侧具有辐射出射区域。在与辐射出口区域相对的后侧，发光二极管芯片至少在区域中具有含有银的镜面层。降低镜面层的腐蚀和/或改善粘合性的功能层被布置在镜面层上，其中形成功能层的材料也分布在整个镜面层中。功能层的材料在镜面层中具有浓度梯度，其中镜面层中的功能层的材料的浓度从功能层朝向半导体层序列的方向减小。

4. 发明授权

US08900888B2 Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip 有权
标题翻译：光电半导体芯片及其制造方法
公开(公告)号：US08900888B2
公开(公告)日：2014-12-02
申请号：US13318818
申请日：2010-04-08
申请人： Nikolaus Gmeinwieser , Berthold Hahn
发明人： Nikolaus Gmeinwieser , Berthold Hahn
IPC分类号： H01L21/66 , G01R31/26 , H01L33/08 , H01L33/24 , H01L33/22
CPC分类号： H01L33/508 , H01L33/06 , H01L33/08 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/504
摘要： An optoelectronic semiconductor chip includes a semiconductor layer sequence. The semiconductor layer sequence contains at least one active layer for generating primary radiation. In addition, the semiconductor layer sequence includes a plurality of conversion layers, the conversion layers being designed to absorb the primary radiation at least partially and to convert it into secondary radiation of a longer wavelength than the primary radiation. Furthermore the semiconductor layer sequence comprises a roughening which extends at least into the conversion layers.
摘要翻译：光电半导体芯片包括半导体层序列。半导体层序列包含至少一个用于产生初级辐射的活性层。此外，半导体层序列包括多个转换层，转换层被设计成至少部分地吸收主辐射并将其转换成比主辐射更长波长的次级辐射。此外，半导体层序列包括至少延伸到转换层中的粗糙化。

5. 发明授权

US08816353B2 Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip 有权
标题翻译：光电半导体芯片及其制造方法
公开(公告)号：US08816353B2
公开(公告)日：2014-08-26
申请号：US13138034
申请日：2009-11-02
申请人： Nikolaus Gmeinwieser , Matthias Sabathil , Andreas Leber
发明人： Nikolaus Gmeinwieser , Matthias Sabathil , Andreas Leber
IPC分类号： H01L29/15 , H01L21/00 , H01L33/22
CPC分类号： H01L33/22
摘要： In at least one embodiment of the optoelectronic semiconductor chip (1), the latter comprises a semiconductor layer sequence (2) comprising at least one active layer (3) designed for generating an electromagnetic radiation. Furthermore, the optoelectronic semiconductor chip (1) has coupling-out structures (4), which are fitted at least indirectly on a radiation passage area (20) of the semiconductor layer sequence (2). In this case, a material of the coupling-out structures (4) is different than a material of the semiconductor layer sequence (2). The refractive indices of the materials of the coupling-out structures (4) and of the semiconductor layer sequence (2) deviate from one another by at most 30%. Furthermore, facets (40) of the coupling-out structures (4) have a total area amounting to at least 30% of an area content of the radiation passage area (20).
摘要翻译：在光电半导体芯片（1）的至少一个实施例中，后者包括半导体层序列（2），其包括设计用于产生电磁辐射的至少一个有源层（3）。此外，光电子半导体芯片（1）具有耦合输出结构（4），其至少间接地配合在半导体层序列（2）的辐射通道区域（20）上。在这种情况下，耦合结构（4）的材料与半导体层序列（2）的材料不同。耦合出结构（4）和半导体层序列（2）的材料的折射率彼此相差至多30％。此外，耦合结构（4）的小面（40）具有相当于辐射通过区域（20）的面积含量的至少30％的总面积。

6. 发明申请

US20130146910A1 LIGHT EMITTING DIODE CHIP 有权
标题翻译：发光二极管芯片
公开(公告)号：US20130146910A1
公开(公告)日：2013-06-13
申请号：US13581417
申请日：2011-02-15
申请人： Markus Maute , Karl Engl , Stefanie Rammelsberger , Nikolaus Gmeinwieser , Johann Eibl
发明人： Markus Maute , Karl Engl , Stefanie Rammelsberger , Nikolaus Gmeinwieser , Johann Eibl
IPC分类号： H01L33/60
CPC分类号： H01L33/60 , H01L33/20 , H01L33/382 , H01L33/405 , H01L33/46 , H01L33/54 , H01L2924/0002 , H01L2924/00
摘要： A light emitting diode chip includes a semiconductor layer sequence, the semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side. At a rear side lying opposite the radiation exit area, the light emitting diode chip has, at least in regions, a mirror layer containing silver. A functional layer that reduces corrosion and/or improves adhesion of the mirror layer is arranged on the mirror layer, wherein a material from which the functional layer is formed is also distributed in the entire mirror layer. The material of the functional layer has a concentration gradient in the mirror layer, wherein the concentration of the material of the functional layer in the mirror layer decreases proceeding from the functional layer in the direction toward the semiconductor layer sequence.
摘要翻译：发光二极管芯片包括半导体层序列，所述半导体层序列具有产生电磁辐射的有源层，其中所述发光二极管芯片在前侧具有辐射出射区域。在与辐射出口区域相对的后侧，发光二极管芯片至少在区域中具有含有银的镜面层。降低镜面层的腐蚀和/或改善粘合性的功能层被布置在镜面层上，其中形成功能层的材料也分布在整个镜面层中。功能层的材料在镜面层中具有浓度梯度，其中镜面层中的功能层的材料的浓度从功能层朝向半导体层序列的方向减小。

7. 发明申请

US20120146044A1 Optoelectronic Semiconductor Chip and Method for Producing an Optoelectronic Semiconductor Chip 有权
标题翻译：光电半导体芯片及其制造方法
公开(公告)号：US20120146044A1
公开(公告)日：2012-06-14
申请号：US13138034
申请日：2009-11-02
申请人： Nikolaus Gmeinwieser , Matthias Sabathil , Andreas Leber
发明人： Nikolaus Gmeinwieser , Matthias Sabathil , Andreas Leber
IPC分类号： H01L33/02 , H01L33/58
CPC分类号： H01L33/22
摘要： In at least one embodiment of the optoelectronic semiconductor chip (1), the latter comprises a semiconductor layer sequence (2) comprising at least one active layer (3) designed for generating an electromagnetic radiation. Furthermore, the optoelectronic semiconductor chip (1) has coupling-out structures (4), which are fitted at least indirectly on a radiation passage area (20) of the semiconductor layer sequence (2). In this case, a material of the coupling-out structures (4) is different than a material of the semiconductor layer sequence (2). The refractive indices of the materials of the coupling-out structures (4) and of the semiconductor layer sequence (2) deviate from one another by at most 30%. Furthermore, facets (40) of the coupling-out structures (4) have a total area amounting to at least 30% of an area content of the radiation passage area (20).
摘要翻译：在光电半导体芯片（1）的至少一个实施例中，后者包括半导体层序列（2），其包括设计用于产生电磁辐射的至少一个有源层（3）。此外，光电子半导体芯片（1）具有耦合输出结构（4），其至少间接地配合在半导体层序列（2）的辐射通道区域（20）上。在这种情况下，耦合结构（4）的材料与半导体层序列（2）的材料不同。耦合出结构（4）和半导体层序列（2）的材料的折射率彼此相差至多30％。此外，耦合结构（4）的小面（40）具有相当于辐射通过区域（20）的面积含量的至少30％的总面积。

8. 发明授权

US08916403B2 Method for producing a plurality of optoelectronic semiconductor chips 有权
标题翻译：多个光电子半导体芯片的制造方法
公开(公告)号：US08916403B2
公开(公告)日：2014-12-23
申请号：US13580491
申请日：2011-02-03
申请人： Ewald K. M. Günther , Mathias Kämpf , Jens Dennemarck , Nikolaus Gmeinwieser
发明人： Ewald K. M. Günther , Mathias Kämpf , Jens Dennemarck , Nikolaus Gmeinwieser
IPC分类号： H01L21/00 , H01L33/08 , H01L27/15 , H01L21/78 , B28D5/00
CPC分类号： H01L27/153 , B28D5/0011 , H01L21/78
摘要： A method for producing a plurality of optoelectronic semiconductor chips includes providing a carrier wafer having a first surface and a second surface opposite the first surface, wherein a plurality of individual component layer sequences spaced apart from one another in a lateral direction are applied on the first surface, the component layer sequences being separated from one another by separation trenches; introducing at least one crystal imperfection in at least one region of the carrier wafer which at least partly overlaps a separation trench in a vertical direction; singulating the carrier wafer along the at least one crystal imperfection into individual semiconductor chips.
摘要翻译：一种制造多个光电子半导体芯片的方法包括提供具有第一表面和与第一表面相对的第二表面的载体晶片，其中在横向上彼此间隔开的多个单独的部件层序列被施加在第一表面，组分层序列通过分离沟槽彼此分离; 在载体晶片的至少一个区域中引入至少一个在垂直方向上至少部分地与分离沟槽重叠的晶体缺陷; 将载体晶片沿着至少一个晶体缺陷分离成单独的半导体芯片。

9. 发明授权

US08592840B2 Optoelectronic semiconductor chip and use of an intermediate layer based on AlGaN 有权
标题翻译：光电子半导体芯片和基于AlGaN的中间层的使用
公开(公告)号：US08592840B2
公开(公告)日：2013-11-26
申请号：US13519345
申请日：2010-12-20
申请人： Matthias Peter , Tobias Meyer , Nikolaus Gmeinwieser , Tetsuya Taki , Hans-Jürgen Lugauer , Alexander Walter
发明人： Matthias Peter , Tobias Meyer , Nikolaus Gmeinwieser , Tetsuya Taki , Hans-Jürgen Lugauer , Alexander Walter
IPC分类号： H01L33/00
CPC分类号： H01L33/025 , H01L33/007 , H01L33/0079 , H01L33/12 , H01L33/16 , H01L33/22 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip includes an epitaxially grown semiconductor layer sequence based on GaN, InGaN, AlGaN and/or InAlGaN, a p-doped layer sequence, an n-doped layer sequence, an active zone that generates an electromagnetic radiation and is situated between the p-doped layer sequence and the n-doped layer sequence, and at least one AlxGa1-xN-based intermediate layer where 0
摘要翻译：光电半导体芯片包括基于GaN，InGaN，AlGaN和/或InAlGaN的外延生长的半导体层序列，p掺杂层序列，n掺杂层序列，产生电磁辐射并位于 p掺杂层序列和n掺杂层序列，以及至少一个Al x Ga 1-x N基中间层，其中0≤x≤1，其位于与n掺杂层序列相同的有源区的一侧。

10. 发明申请

US20130069086A1 METHOD FOR PRODUCING A PLURALITY OF OPTOELECTRONIC SEMICONDUCTOR CHIPS 有权
标题翻译：用于生产多光子半导体晶体管的方法
公开(公告)号：US20130069086A1
公开(公告)日：2013-03-21
申请号：US13580491
申请日：2011-02-03
申请人： Ewald K. M. Günther , Mathias Kämpf , Jens Dennemarck , Nikolaus Gmeinwieser
发明人： Ewald K. M. Günther , Mathias Kämpf , Jens Dennemarck , Nikolaus Gmeinwieser
IPC分类号： H01L33/08
CPC分类号： H01L27/153 , B28D5/0011 , H01L21/78
摘要： A method for producing a plurality of optoelectronic semiconductor chips includes providing a carrier wafer having a first surface and a second surface opposite the first surface. wherein a plurality of individual component layer sequences spaced apart from one another in a lateral direction are applied on the first surface, the component layer sequences being separated from one another by separation trenches; introducing at least one crystal imperfection in at least one region of the carrier wafer which at least partly overlaps a separation trench in a vertical direction; singulating the carrier wafer along the at least one crystal imperfection into individual semiconductor.
摘要翻译：一种制造多个光电子半导体芯片的方法包括提供具有第一表面和与第一表面相对的第二表面的载体晶片。其中在横向上彼此间隔开的多个单独组分层序列施加在第一表面上，组分层序列通过分离沟槽彼此分离; 在载体晶片的至少一个区域中引入至少一个在垂直方向上至少部分地与分离沟槽重叠的晶体缺陷; 将载体晶片沿着至少一个晶体缺陷分离成单个半导体。

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