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1. 发明授权

US06361820B1 Dielectric films from organohydridosiloxane resins with high organic content 失效
标题翻译：具有高有机含量的有机氢硅氧烷树脂的介电薄膜
公开(公告)号：US06361820B1
公开(公告)日：2002-03-26
申请号：US09609499
申请日：2000-06-30
申请人： Nigel P. Hacker , Scott P. Lefferts , Lisa K. Figge , Michael D. Slessor
发明人： Nigel P. Hacker , Scott P. Lefferts , Lisa K. Figge , Michael D. Slessor
IPC分类号： B05D302
CPC分类号： H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3121 , H01L21/3122 , Y10T428/265 , Y10T428/31663
摘要： A method of making a dielectric film on a substrate from a composition containing an organohydridosiloxane resin is presented. The organohydridosiloxane resins have a cage conformation and 40 mole percent or greater of an organic substituent. The process of making a dielectric film includes forming a solution of a solvent and the organohydridosiloxane resin, dispensing the solution on a substrate, spinning the substrate, baking the substrate to remove the solvent, and curing the substrate to form the dielectric film. The dielectric films of the present invention exhibit dielectric constants of approximately 2.8 or lower.
摘要翻译：提出了一种从含有机硅氧烷树脂的组合物在基片上制作电介质膜的方法。有机氢硅氧烷树脂具有笼形构象和40摩尔％以上的有机取代基。制造电介质膜的方法包括形成溶剂和有机氢硅氧烷树脂的溶液，将溶液分配在基材上，纺丝基板，烘烤基板以除去溶剂，并固化基板以形成电介质膜。本发明的电介质膜的介电常数为2.8以下。

2. 发明授权

US06358559B1 Dielectric films from organohydridosiloxane resins with low organic content 失效
标题翻译：具有低有机含量的有机氢硅氧烷树脂的介电薄膜
公开(公告)号：US06358559B1
公开(公告)日：2002-03-19
申请号：US09609437
申请日：2000-06-30
申请人： Nigel P. Hacker , Scott P. Lefferts , Lisa K. Figge , Michael D. Slessor
发明人： Nigel P. Hacker , Scott P. Lefferts , Lisa K. Figge , Michael D. Slessor
IPC分类号： B05D302
CPC分类号： C08G77/04 , C08G77/12 , G03F7/0751 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3121 , H01L21/3122 , H01L21/76807 , H01L21/76829 , H01L21/76835 , Y10T428/265 , Y10T428/31663
摘要： A method of making a dielectric film on a substrate from a composition containing an organohydridosiloxane resin is presented. The organohydridosiloxane resins have a cage conformation and up to 40 mole percent of an organic substituent. The process of making a dielectric film includes forming a solution of a solvent and the organohydridosiloxane resin, dispensing the solution on a substrate, spinning the substrate, baking the substrate to remove the solvent, and curing the substrate to form the dielectric film. The dielectric films of the present invention exhibit dielectric constants of approximately 3 or lower.
摘要翻译：提出了一种从含有机硅氧烷树脂的组合物在基片上制作电介质膜的方法。有机氢硅氧烷树脂具有笼形构象和至多40摩尔％的有机取代基。制造电介质膜的方法包括形成溶剂和有机氢硅氧烷树脂的溶液，将溶液分配在基材上，纺丝基板，烘烤基板以除去溶剂，并固化基板以形成电介质膜。本发明的电介质膜的介电常数为3以下。

3. 发明授权

US06177199B1 Dielectric films from organohydridosiloxane resins with low organic content 失效
标题翻译：具有低有机含量的有机氢硅氧烷树脂的介电薄膜
公开(公告)号：US06177199B1
公开(公告)日：2001-01-23
申请号：US09227035
申请日：1999-01-07
申请人： Nigel P. Hacker , Scott P. Lefferts , Lisa K. Figge
发明人： Nigel P. Hacker , Scott P. Lefferts , Lisa K. Figge
IPC分类号： B32B904
CPC分类号： C08G77/04 , C08G77/12 , G03F7/0751 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3121 , H01L21/3122 , H01L21/76807 , H01L21/76829 , H01L21/76835 , Y10T428/265 , Y10T428/31663
摘要： A method of making a dielectric film on a substrate from a composition containing an organohydridosiloxane resin is presented. The organohydridosiloxane resins have a cage conformation and up to 40 mole percent of an organic substituent. The process of making a dielectric film includes forming a solution of a solvent and the organohydridosiloxane resin, dispensing the solution on a substrate, spinning the substrate, baking the substrate to remove the solvent, and curing the substrate to form the dielectric film. The dielectric films of the present invention exhibit dielectric constants of approximately 3 or lower.
摘要翻译：提出了一种从含有机硅氧烷树脂的组合物在基片上制作电介质膜的方法。有机氢硅氧烷树脂具有笼形构象和至多40摩尔％的有机取代基。制造电介质膜的方法包括形成溶剂和有机氢硅氧烷树脂的溶液，将溶液分配在基材上，纺丝基板，烘烤基板以除去溶剂，并固化基板以形成电介质膜。本发明的电介质膜的介电常数为3以下。

4. 发明授权

US06218020B1 Dielectric films from organohydridosiloxane resins with high organic content 失效
标题翻译：具有高有机含量的有机氢硅氧烷树脂的介电薄膜
公开(公告)号：US06218020B1
公开(公告)日：2001-04-17
申请号：US09227498
申请日：1999-01-07
申请人： Nigel P. Hacker , Scott P. Lefferts , Lisa K. Figge
发明人： Nigel P. Hacker , Scott P. Lefferts , Lisa K. Figge
IPC分类号： B32B904
CPC分类号： H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3121 , H01L21/3122 , Y10T428/265 , Y10T428/31663
摘要： A method of making a dielectric film on a substrate from a composition containing an organohydridosiloxane resin is presented. The organohydridosiloxane resins have a cage conformation and 40 mole percent or greater of an organic substituent. The process of making a dielectric film includes forming a solution of a solvent and the organohydridosiloxane resin, dispensing the solution on a substrate, spinning the substrate, baking the substrate to remove the solvent, and curing the substrate to form the dielectric film. The dielectric films of the present invention exhibit dielectric constants of approximately 2.8 or lower.
摘要翻译：提出了一种从含有机硅氧烷树脂的组合物在基片上制作电介质膜的方法。有机氢硅氧烷树脂具有笼形构象和40摩尔％以上的有机取代基。制造电介质膜的方法包括形成溶剂和有机氢硅氧烷树脂的溶液，将溶液分配在基材上，纺丝基板，烘烤基板以除去溶剂，并固化基板以形成电介质膜。本发明的电介质膜的介电常数为2.8以下。

5. 发明授权

US06743856B1 Synthesis of siloxane resins 失效
标题翻译：硅氧烷树脂的合成
公开(公告)号：US06743856B1
公开(公告)日：2004-06-01
申请号：US09505314
申请日：2000-02-16
申请人： Nigel P. Hacker , Lisa K. Figge , Scott Lefferts
发明人： Nigel P. Hacker , Lisa K. Figge , Scott Lefferts
IPC分类号： C08L8304
CPC分类号： H01L21/02126 , C08G77/04 , C08G77/12 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： Novel processes for preparing hydridosiloxane and organohydridosiloxane resins are disclosed. The processes of the invention broadly provide for the steps of contacting a silane monomer with a phase transfer catalyst in the presence of a reaction mixture that includes a nonpolar, e.g., hydrocarbon, solvent, and a polar solvent, e.g., alcohol and water. The process is conducted under conditions effective to catalytically convert said silane monomer into hydridosiloxane and organohydridosiloxane resins. Recovery of the products is advantageously aided by the ease of separating the phase transfer catalyst from the dual phase reaction mixture by separating the immiscible polar solvent carrying the catalyst from the nonpolar solvent, that carries the product. Hydridosiloxane and organohydridosiloxane resins produced by the processes of the invention are also provided.
摘要翻译：公开了制备氢硅氧烷和有机氢硅氧烷树脂的新方法。本发明的方法广泛地提供了在包含非极性例如烃，溶剂和极性溶剂如醇和水的反应混合物存在下使硅烷单体与相转移催化剂接触的步骤。该方法在有效地将所述硅烷单体催化转化成氢硅氧烷和有机氢硅氧烷树脂的条件下进行。有利的是通过将携带催化剂的不混溶极性溶剂与携带该产物的非极性溶剂分离出来，可以容易地将相转移催化剂与双相反应混合物分离。还提供了通过本发明的方法制备的氢硅氧烷和有机氢硅氧烷树脂。

6. 发明授权

US6043330A Synthesis of siloxane resins 失效
标题翻译：硅氧烷树脂的合成
公开(公告)号：US6043330A
公开(公告)日：2000-03-28
申请号：US55244
申请日：1998-04-06
申请人： Nigel P. Hacker , Lisa K. Figge , Scott Lefferts
发明人： Nigel P. Hacker , Lisa K. Figge , Scott Lefferts
IPC分类号： C08G77/04 , C08G77/08 , C08G77/12 , C09D183/05 , H01L21/312 , H01L21/768 , H01L23/532 , C08G77/06
CPC分类号： C08G77/04 , C08G77/12 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L23/5329 , H01L2924/0002
摘要： Novel processes for preparing hydridosiloxane and organohydridosiloxane resins are disclosed. The processes of the invention broadly provide for the steps of contacting a silane monomer with a phase transfer catalyst in the presence of a reaction mixture that includes a nonpolar, e.g., hydrocarbon, solvent, and a polar solvent, e.g., alcohol and water. The process is conducted under conditions effective to catalytically convert said silane monomer into hydridosiloxane and organohydridosiloxane resins. Recovery of the products is advantageously aided by the ease of separating the phase transfer catalyst from the dual phase reaction mixture by separating the immiscible polar solvent carrying the catalyst from the nonpolar solvent that carries the product. Hydridosiloxane and organohydridosiloxane resins produced by the processes of the invention are also provided.
摘要翻译：公开了制备氢硅氧烷和有机氢硅氧烷树脂的新方法。本发明的方法广泛地提供了在包含非极性例如烃，溶剂和极性溶剂如醇和水的反应混合物存在下使硅烷单体与相转移催化剂接触的步骤。该方法在有效地将所述硅烷单体催化转化成氢硅氧烷和有机氢硅氧烷树脂的条件下进行。通过将携带催化剂的不混溶的极性溶剂与携带产物的非极性溶剂分离，可有利地辅助相分离催化剂与双相反应混合物的分离。还提供了通过本发明的方法制备的氢硅氧烷和有机氢硅氧烷树脂。

7. 发明授权

US06956097B2 Spin-on-glass anti-reflective coatings for photolithography 有权
公开(公告)号：US06956097B2
公开(公告)日：2005-10-18
申请号：US10076846
申请日：2002-02-14
申请人： Joseph Kennedy , Teresa Baldwin , Nigel P. Hacker , Richard Spear
发明人： Joseph Kennedy , Teresa Baldwin , Nigel P. Hacker , Richard Spear
IPC分类号： G03F7/004 , C03C17/00 , C03C17/30 , C07F7/18 , C08K5/00 , C09D7/12 , C09D183/04 , C09D183/06 , C09D183/08 , G03C1/492 , G03F7/075 , G03F7/09 , G03F7/11 , H01L21/027 , C08G77/12
CPC分类号： G03F7/091 , C03C17/008 , C03C17/30 , C08K5/0008 , C09D183/04 , C09D183/06 , C09D183/08 , G03F7/0752 , H01L21/0276 , Y10T428/31663 , C08L83/04 , C08L2666/28
摘要： Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic light-absorbing compounds incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, and 193 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining one or more organic absorbing compounds with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.

8. 发明授权

US06512071B1 Organohydridosiloxane resins with high organic content 失效
公开(公告)号：US06512071B1
公开(公告)日：2003-01-28
申请号：US09611528
申请日：2000-06-30
申请人： Nigel P. Hacker , Scott Lefferts , Lisa Figge
发明人： Nigel P. Hacker , Scott Lefferts , Lisa Figge
IPC分类号： C08G7708
CPC分类号： H01L21/02126 , C08G77/12 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L23/5329 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： An organohydridosiloxane polymer having a cage conformation, at least approximately 40 Mole percent carbon containing substituents and a dielectric constant of less than about 2.7 is presented. Each silicon atom of the cage polymer is bonded to at least three oxygen atoms and to either a hydrogen atom or an organic substituent. By providing such a caged structure with essentially no hydroxyl or alkoxy substituents, either on the polymer backbone or at terminal silicon atoms, essentially no chain lengthening polymerization can occur in solution. Such organohydridosiloxane resins having a molecular weight in the range from about 400 to about 200,000 atomic mass units were formed using a dual phase solvent system and either a solid phase or phase transfer catalyst to assist the condensation of hydridotrihalosilane with at least one organotrihalosilane.

9. 发明授权

US06218497B1 Organohydridosiloxane resins with low organic content 失效
标题翻译：有机硅含量低的有机硅硅氧烷树脂
公开(公告)号：US06218497B1
公开(公告)日：2001-04-17
申请号：US09044831
申请日：1998-03-20
申请人： Nigel P. Hacker , Scott Lefferts , Lisa Figge
发明人： Nigel P. Hacker , Scott Lefferts , Lisa Figge
IPC分类号： C08G7712
CPC分类号： C08G77/12 , C08G77/04
摘要： An organohydridosiloxane polymer having a cage conformation, between approximately 0.1 to 40 mole percent carbon-containing substituent, and a dielectric constant of less than about 3.0 is disclosed. Each silicon atom of the cage polymer is bonded to at least three oxygen atoms and to either a hydrogen atom or an organic substituent. By providing such a caged structure having essentially no hydroxyl or alkoxy substituents, either on the polymer backbone or at terminal silicon atoms, essentially no chain lengthening polymerization can occur in solution. Such organohydridosiloxane resins having a molecular weight in the range from about 400 to about 200,000 atomic mass units were formed using a dual phase solvent system and either a solid phase or a phase transfer catalyst to assist the condensation of hydridotrihalosilane with at least one organotrihalosilane.
摘要翻译：公开了具有笼构象的有机氢硅氧烷聚合物，约0.1-40摩尔％的含碳取代基，介电常数小于约3.0。笼状聚合物的每个硅原子与至少三个氧原子和氢原子或有机取代基结合。通过提供这样一种基本上没有羟基或烷氧基取代基的笼式结构，无论是在聚合物主链上还是在末端硅原子上，基本上不会在溶液中发生链延长聚合。使用双相溶剂系统和固相或相转移催化剂形成分子量在约400至约200,000原子质量单位范围内的这种有机氢硅氧烷树脂，以有助于氢三卤代硅烷与至少一种有机三卤代硅烷的缩合。

10. 发明授权

US07678462B2 Spin-on-glass anti-reflective coatings for photolithography 失效
标题翻译：旋光玻璃防反射涂层，用于光刻
公开(公告)号：US07678462B2
公开(公告)日：2010-03-16
申请号：US11178544
申请日：2005-07-11
申请人： Joseph Kennedy , Teresa Baldwin , Nigel P. Hacker , Richard Spear
发明人： Joseph Kennedy , Teresa Baldwin , Nigel P. Hacker , Richard Spear
IPC分类号： B32B9/04
CPC分类号： G03F7/091 , C03C17/008 , C03C17/30 , C08K5/0008 , C09D183/04 , C09D183/06 , C09D183/08 , G03F7/0752 , H01L21/0276 , Y10T428/31663 , C08L83/04 , C08L2666/28
摘要： Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic light-absorbing compounds incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, and 193 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining one or more organic absorbing compounds with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.
摘要翻译：用于深紫外光刻的抗反射涂层材料包括掺入旋涂玻璃材料中的一种或多种有机光吸收化合物。合适的吸收化合物在可用于光刻的诸如365nm，248nm和193nm的波长附近的波长范围上是强吸收的。制造吸收旋涂玻璃材料的方法包括在旋涂玻璃材料的合成期间将一种或多种有机吸收化合物与烷氧基硅烷或卤代硅烷反应物组合。

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