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1. 发明申请

US20050253656A1 Rf power amplifier 失效
标题翻译： Rf功率放大器
公开(公告)号：US20050253656A1
公开(公告)日：2005-11-17
申请号：US10514900
申请日：2003-05-19
申请人： Niels Kramer , Ronald Koster , Rob Heeres , John Hug
发明人： Niels Kramer , Ronald Koster , Rob Heeres , John Hug
IPC分类号： H03F3/21 , H03F3/68
CPC分类号： H03F3/19 , H03F3/211
摘要： An RF power amplifier according to the invention comprises a plurality of parallel output transistors (HBT,1,1 to HBT,1,N) connected to a power supply. A plurality of base resistors (Rb,1,1 to Rb,1,N) for the output transistors (HBT,1,1 to HBT,1,N) and a plurality of input capacitors (Cb,1 to Cb,N), each coupled in parallel to receive an RF signal input and connected via at least one additional passive component to the inputs of each corresponding output transistor (HBT,1,1 to HBT,1,N), are provided. An output for an RF output signal is obtained from the parallelconnection of the output transistors (HBT,1,1 to HBT,1,N). The transistors (HBT,1,1 to HBT,1,N) are heterojunction bipolar transistors.
摘要翻译：根据本发明的RF功率放大器包括连接到电源的多个并联输出晶体管（HBT，1,1至HBT，1，N）。用于输出晶体管（HBT，1,1至HBT，1，N）和多个输入电容器（Cb，1至Cb，N）的多个基本电阻器（Rb，1,1至Rb，1，N），每个并联耦合以接收经由至少一个附加无源部件输入并连接到每个对应的输出晶体管（HBT，1,1至HBT，1，N）的输入的RF信号。从输出晶体管（HBT，1,1至HBT，1，N）的并联连接获得RF输出信号的输出。晶体管（HBT，1,1至HBT，1，N）是异质结双极晶体管。

2. 发明授权

US07154339B2 RF power amplifier 失效
标题翻译：射频功率放大器
公开(公告)号：US07154339B2
公开(公告)日：2006-12-26
申请号：US10514900
申请日：2003-05-19
申请人： Niels Kramer , Ronald Koster , Rob Mathijs Heeres , John Joseph Hug
发明人： Niels Kramer , Ronald Koster , Rob Mathijs Heeres , John Joseph Hug
IPC分类号： H03F3/68
CPC分类号： H03F3/19 , H03F3/211
摘要： An RF power amplifier according to the invention comprises a plurality of parallel output transistors (HBT,1,1 to HBT,1,N) connected to a power supply. A plurality of base resistors (Rb,1,1 to Rb,1,N) for the output transistors (HBT,1,1 to HBT,1,N) and a plurality of input capacitors (Cb,1 to Cb,N), each coupled in parallel to receive an RF signal input and connected via at least one additional passive component to the inputs of each corresponding output transistor (HBT,1,1 to HBT,1,N), are provided An output for an RF output signal is obtained from the parallel connection of the output transistors (HBT,1,1 to HBT,1,N). The transistors (HBT,1,1 to HBT,1,N) are heterojunction bipolar transistors.
摘要翻译：根据本发明的RF功率放大器包括连接到电源的多个并联输出晶体管（HBT，1,1至HBT，1，N）。用于输出晶体管（HBT，1,1至HBT，1，N）和多个输入电容器（Cb，1至Cb，N）的多个基本电阻器（Rb，1,1至Rb，1，N），每个并联耦合以接收经由至少一个附加无源分量输入并连接到每个对应的输出晶体管（HBT，1,1至HBT，1，N）的输入的RF信号。RF输出的输出信号从输出晶体管（HBT，1,1至HBT，1，N）的并联连接获得。晶体管（HBT，1,1至HBT，1，N）是异质结双极晶体管。

3. 发明授权

US06291836B1 Method of operating a programmable, non-volatile memory device 失效
标题翻译：操作可编程的非易失性存储器件的方法
公开(公告)号：US06291836B1
公开(公告)日：2001-09-18
申请号：US08866649
申请日：1997-05-30
申请人： Niels Kramer , Maarten J. H. Niesten , Wilhelmus H. M. Lodders , Gerrit Oversluizen
发明人： Niels Kramer , Maarten J. H. Niesten , Wilhelmus H. M. Lodders , Gerrit Oversluizen
IPC分类号： H01L218246
CPC分类号： G11C16/02 , G11C17/14 , H01L21/822 , H01L27/10
摘要： The invention relates to an erasable non-volatile memory in which a diode is formed at each point of intersection between the x-selection lines (Ki) and y-selection lines (Rj), of which diode the anode and cathode are conductively connected to the x- and y-selection lines. The diodes are formed in hydrogenated amorphous silicon or silicon compounds such as amorphous Si−xGex. Writing takes place by means of a current pulse through selected diodes. The current in the forward direction becomes much lower, for example a few hundred times lower, than in diodes which are not selected, probably owing to degradation in the semiconductor material. The diodes may be returned to their original state again (i.e. be erased) through heating, for example at a temperature of 200° C. during 100 minutes. Preferably, the diodes are formed by Schottky diodes because the characteristic in the reverse direction does not (substantially) change in this type of diode. The Schottky diodes may be formed in the transitional region between the amorphous intrinsic semiconductor material (6) and the selection lines (Ki).
摘要翻译：本发明涉及一种可擦除非易失性存储器，其中在x选择线（Ki）和y选择线（Rj）之间的每个交点处形成二极管，其中阳极和阴极二极管导电连接到 x和y选择行。二极管形成在氢化非晶硅或硅化合物如非晶Si-xGex中。通过选定二极管的电流脉冲进行写入。正向方向上的电流比未选择的二极管低得多，例如低几百倍，可能是由于半导体材料的劣化。二极管可以通过加热再次（即被擦除）返回到其原始状态，例如在200℃的温度下在100分钟内。优选地，二极管由肖特基二极管形成，因为在这种类型的二极管中反向特性不会（基本上）改变。肖特基二极管可以形成在非晶本征半导体材料（6）和选择线（Ki）之间的过渡区域中。

4. 发明授权

US06990323B2 RF power amplifier circuit 有权
标题翻译：射频功率放大电路
公开(公告)号：US06990323B2
公开(公告)日：2006-01-24
申请号：US10270345
申请日：2002-10-11
申请人： Dmitry Pavlovich Prikhodko , Albertus Gerardus Wilhelmus Philipus Van Zuijlen , Niels Kramer
发明人： Dmitry Pavlovich Prikhodko , Albertus Gerardus Wilhelmus Philipus Van Zuijlen , Niels Kramer
IPC分类号： H04B1/04
CPC分类号： H03F1/302 , H03F1/52
摘要： A RF power amplifier circuit has at least one power transistor and a protection circuit protecting the power transistor against high voltages that lead to a destructive breakdown of the transistor. The circuit comprises a power transistor (2), a biasing circuit (6) biasing the power transistor; a peak detector (8) measuring the output voltage of the power transistor; and a comparator circuit (12) connected to the peak detector (8) and designed to reduce the base current of the power transistor (2) when controlled by the peak detector (8).
摘要翻译： RF功率放大器电路具有至少一个功率晶体管和保护电路，以保护功率晶体管免受导致晶体管的破坏性破坏的高电压。电路包括功率晶体管（2），偏置电路（6），偏置功率晶体管; 测量功率晶体管的输出电压的峰值检测器（8）; 以及连接到峰值检测器（8）并被设计成当由峰值检测器（8）控制时减小功率晶体管（2）的基极电流的比较器电路（12）。

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