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    • 8. 发明授权
    • Method of forming a thin film capacitor
    • 薄膜电容器的形成方法
    • US4002545A
    • 1977-01-11
    • US656526
    • 1976-02-09
    • Francis P. FehinerArthur J. WhitmanPeter L. Young
    • Francis P. FehinerArthur J. WhitmanPeter L. Young
    • C23C14/08C23C14/18H01G4/08C23C15/00H01G7/00
    • C23C14/083C23C14/18H01G4/08Y10T29/435
    • A method of forming a thin film capacitor having a tantalum oxide dielectric is described. A dielectric substrate having formed thereon a duplex electrically conductive film comprising a non-tantalum electrically conductive film electrode covered by a thin tantalum film is disposed within an oxygen-inert gas containing vacuum environment, said non-tantalum film being disposed intermediate said substrate and said tantalum film. A film of tantalum oxide is applied over the conductive film by r-f sputtering of a tantalum oxide target within the oxygen-inert gas containing vacuum environment while the dielectric substrate and conductive film are being cooled. The composite may then be removed from said oxygen-inert gas containing environment and a second electrically conductive film electrode applied over the so-formed tantalum oxide film.
    • 描述了形成具有氧化钽电介质的薄膜电容器的方法。 在其上形成有包括由薄钽膜覆盖的非钽导电膜电极的双面导电膜的电介质基板设置在含有真空环境的含氧惰性气体中,所述非钽膜设置在所述基板和所述 钽膜。 在电介质基板和导电膜被冷却的同时,在含氧惰性气体的真空环境中,通过在氧化钽靶上进行r-f溅射,在导电膜上施加氧化钽膜。 然后可以从所述含氧不活泼气体的环境中除去复合材料,以及施加在如此形成的氧化钽膜上的第二导电膜电极。