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1. 发明授权

US09773666B2 Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN and its alloys with AIN at low temperatures 有权
公开(公告)号：US09773666B2
公开(公告)日：2017-09-26
申请号：US13916724
申请日：2013-06-13
申请人： Neeraj Nepal , Charles R. Eddy, Jr. , Nadeemmullah A. Mahadik , Syed B Qadri , Michael J. Mehl
发明人： Neeraj Nepal , Charles R. Eddy, Jr. , Nadeemmullah A. Mahadik , Syed B Qadri , Michael J. Mehl
IPC分类号： H01L21/02 , H01L29/20 , C30B25/02 , C30B25/20 , C30B29/38 , C30B29/40
CPC分类号： H01L21/0254 , C30B25/02 , C30B25/205 , C30B29/38 , C30B29/40 , C30B29/403 , H01L21/02381 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0262 , H01L21/02661 , H01L29/2003
摘要： Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.

2. 发明授权

US10937649B2 Epitaxial growth of cubic and hexagonal InN films and their alloys with AlN and GaN 有权
公开(公告)号：US10937649B2
公开(公告)日：2021-03-02
申请号：US14571826
申请日：2014-12-16
申请人： Neeraj Nepal , Charles R. Eddy, Jr. , Nadeemmullah A. Mahadik , Syed B. Qadri , Michael J. Mehl
发明人： Neeraj Nepal , Charles R. Eddy, Jr. , Nadeemmullah A. Mahadik , Syed B. Qadri , Michael J. Mehl
IPC分类号： H01L21/02 , H01L29/20 , C30B29/38 , C30B29/40
摘要： Described herein is a method for growing InN, GaN, and AlN materials, the method comprising alternate growth of GaN and either InN or AlN to obtain a film of InxGa1−xN, AlxGa1−xN, AlxIn1−xN, or AlxInyGa1−(x+y)N.

3. 发明授权

US10256090B2 Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch process 有权
公开(公告)号：US10256090B2
公开(公告)日：2019-04-09
申请号：US14204045
申请日：2014-03-11
申请人： Rachael L. Myers-Ward , David Kurt Gaskill , Charles R. Eddy, Jr. , Robert E. Stahlbush , Nadeemmullah A. Mahadik , Virginia D. Wheeler
发明人： Rachael L. Myers-Ward , David Kurt Gaskill , Charles R. Eddy, Jr. , Robert E. Stahlbush , Nadeemmullah A. Mahadik , Virginia D. Wheeler
IPC分类号： C03C15/00 , H01L21/02 , C30B25/18 , C30B25/20 , C30B29/36 , H01L29/16 , H01L21/3065
摘要： A method of: providing an off-axis silicon carbide substrate, and etching the surface of the substrate with a dry gas, hydrogen, or an inert gas.

4. 发明授权

US10256094B2 Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch process 有权
公开(公告)号：US10256094B2
公开(公告)日：2019-04-09
申请号：US14204015
申请日：2014-03-11
申请人： Rachael L. Myers-Ward , David Kurt Gaskill , Charles R. Eddy, Jr. , Robert E. Stahlbush , Nadeemmullah A. Mahadik , Virginia D. Wheeler
发明人： Rachael L. Myers-Ward , David Kurt Gaskill , Charles R. Eddy, Jr. , Robert E. Stahlbush , Nadeemmullah A. Mahadik , Virginia D. Wheeler
IPC分类号： B44C1/22 , H01L21/02 , C30B25/20 , C30B29/36 , C30B25/18 , H01L21/3065
摘要： A method of: providing an off-axis 4H—SiC substrate, and etching the surface of the substrate with hydrogen or an inert gas.

5. 发明授权

US10266963B2 Growth of crystalline materials on two-dimensional inert materials 有权
公开(公告)号：US10266963B2
公开(公告)日：2019-04-23
申请号：US14168517
申请日：2014-01-30
申请人： Neeraj Nepal , Virginia D. Wheeler , Charles R. Eddy, Jr. , Francis J. Kub , Travis J. Anderson , Michael A. Mastro , Rachael L. Myers-Ward , Sandra C. Hangarter
发明人： Neeraj Nepal , Virginia D. Wheeler , Charles R. Eddy, Jr. , Francis J. Kub , Travis J. Anderson , Michael A. Mastro , Rachael L. Myers-Ward , Sandra C. Hangarter
IPC分类号： B32B9/00 , C30B25/18 , C30B29/40 , C30B29/48
摘要： A method of growing crystalline materials on two-dimensional inert materials comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material. A crystalline material grown on a two-dimensional inert material made from the process comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material.

6. 发明授权

US08999060B2 Method of growing GaN whiskers from a gallium-containing solvent at low pressure and low temperature 有权
标题翻译：在低压低温下从含镓溶剂中生长GaN晶须的方法
公开(公告)号：US08999060B2
公开(公告)日：2015-04-07
申请号：US13794877
申请日：2013-03-12
申请人： Boris N. Feigelson , Jennifer K. Hite , Francis J. Kub , Charles R. Eddy, Jr.
发明人： Boris N. Feigelson , Jennifer K. Hite , Francis J. Kub , Charles R. Eddy, Jr.
IPC分类号： C30B19/02 , C30B9/00 , C30B9/10 , C30B29/40 , C30B29/62 , C30B19/00 , C30B19/04 , C30B19/10
CPC分类号： C30B9/00 , C30B9/10 , C30B19/00 , C30B19/02 , C30B19/04 , C30B19/10 , C30B29/406 , C30B29/62
摘要： Millimeter-scale GaN single crystals in filamentary form, also known as GaN whiskers, grown from solution and a process for preparing the same at moderate temperatures and near atmospheric pressures are provided. GaN whiskers can be grown from a GaN source in a reaction vessel subjected to a temperature gradient at nitrogen pressure. The GaN source can be formed in situ as part of an exchange reaction or can be preexisting GaN material. The GaN source is dissolved in a solvent and precipitates out of the solution as millimeter-scale single crystal filaments as a result of the applied temperature gradient.
摘要翻译：提供了从溶液中生长的毫米级GaN单晶晶格，也称为GaN晶须，并在中等温度和接近大气压下制备了其制备方法。 GaN晶须可以在氮压力下经受温度梯度的反应容器中从GaN源生长。 GaN源可以作为交换反应的一部分原位形成，或者可以是预先存在的GaN材料。作为施加的温度梯度，将GaN源溶解在溶剂中并作为毫米级单晶细丝从溶液中析出。

7. 发明授权

US08237152B2 White light emitting device based on polariton laser 有权
标题翻译：基于极化激光的白光发射装置
公开(公告)号：US08237152B2
公开(公告)日：2012-08-07
申请号：US12476691
申请日：2009-06-02
申请人： Michael A. Mastro , Charles R. Eddy, Jr.
发明人： Michael A. Mastro , Charles R. Eddy, Jr.
IPC分类号： H01L29/06
CPC分类号： H04B10/1141 , B82Y20/00 , H01S5/005 , H01S5/183 , H01S5/3404 , H01S5/34333 , H04B10/1121
摘要： A high-efficiency white-light-emitting device that includes a polariton light emitter that emits UV or blue light to a down-converting material that converts the polariton emissions to white light. The polariton light emitter includes an active region situated within a resonant optical cavity formed on a substrate. The down-converting material can comprise a luminophoric phosphor or other material. The polariton light and down-converting material can be arranged in a single apparatus to provide a white-light-emitting device that can be used for lighting and instrumentation. The device can also be configured for high-frequency modulation to provide optical signals for communications and control systems.
摘要翻译：一种高效率的白光发射装置，其包括极化子光发射器，其将UV或蓝光发射到将极化子发射转换为白光的向下转换材料。极化子光发射器包括位于形成在衬底上的谐振光学腔内的有源区。下变换材料可以包含发光荧光体或其它材料。极化子光和下变换材料可以布置在单个装置中，以提供可用于照明和仪器的白光发射装置。该器件还可以配置为高频调制，为通信和控制系统提供光信号。

8. 发明授权

US07928471B2 Group III-nitride growth on silicon or silicon germanium substrates and method and devices therefor 有权
标题翻译：硅或硅锗衬底上的III族氮化物生长及其方法和装置
公开(公告)号：US07928471B2
公开(公告)日：2011-04-19
申请号：US11566288
申请日：2006-12-04
申请人： Michael A. Mastro , Charles R. Eddy, Jr. , Shahzad Akbar
发明人： Michael A. Mastro , Charles R. Eddy, Jr. , Shahzad Akbar
IPC分类号： H01L31/102 , H01L33/00 , H01S5/00
CPC分类号： H01L31/078 , H01L31/1812 , H01L31/184 , Y02E10/544
摘要： A structure including a Si1-xGex substrate and a distributed Bragg reflector layer disposed directly onto the substrate. The distributed Bragg reflector layer includes a repeating pattern that includes at least one aluminum nitride layer and a second layer having the general formula AlyGa1-yN. Another aspect of the present invention is various devices including this structure. Another aspect of the present invention is directed to a method of forming such a structure comprising providing a Si1-xGex substrate and depositing a distributed Bragg reflector layer directly onto the substrate. Another aspect of the present invention is directed to a photodetector or photovoltaic cell device, including a Si1-xGex substrate device, a group III-nitride device and contacts to provide a conductive path for a current generated across at least one of the Si1-xGex substrate device and the group III-nitride device upon incident light.
摘要翻译：包括Si1-xGex衬底和直接设置在衬底上的分布式布拉格反射层的结构。分布布拉格反射层包括重复图案，其包括至少一个氮化铝层和具有通式AllyGa1-yN的第二层。本发明的另一方面是包括该结构的各种装置。本发明的另一方面涉及一种形成这种结构的方法，包括提供Si 1-x Ge x衬底并将分布式布拉格反射层直接沉积到衬底上。本发明的另一方面涉及一种光电检测器或光伏电池器件，其包括Si1-xGex衬底器件，III族氮化物器件和触点，以提供穿过Si1-xGex中的至少一个产生的电流的导电路径衬底器件和III族氮化物器件。

9. 发明授权

US09111786B1 Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material 有权
标题翻译：使用镓极性和氮极性III族氮化物材料的互补场效应晶体管
公开(公告)号：US09111786B1
公开(公告)日：2015-08-18
申请号：US14578146
申请日：2014-12-19
申请人： Francis J. Kub , Travis J. Anderson , Michael A. Mastro , Charles R. Eddy, Jr. , Jennifer K. Hite
发明人： Francis J. Kub , Travis J. Anderson , Michael A. Mastro , Charles R. Eddy, Jr. , Jennifer K. Hite
IPC分类号： H01L29/778 , H01L27/092 , H01L27/095 , H01L29/20 , H01L29/201 , H01L29/205 , H01L29/04 , H01L29/36 , H01L29/78 , H01L29/66 , H01L21/335 , H01L21/8228 , H01L21/8238
CPC分类号： H01L27/095 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02631 , H01L21/26546 , H01L21/28575 , H01L21/28587 , H01L21/30612 , H01L21/3065 , H01L21/762 , H01L21/8228 , H01L21/8238 , H01L21/8252 , H01L27/092 , H01L27/0921 , H01L27/0922 , H01L29/045 , H01L29/1075 , H01L29/1608 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/207 , H01L29/365 , H01L29/407 , H01L29/41725 , H01L29/41766 , H01L29/42364 , H01L29/452 , H01L29/51 , H01L29/66431 , H01L29/66439 , H01L29/66462 , H01L29/66477 , H01L29/778 , H01L29/7781 , H01L29/7782 , H01L29/7783 , H01L29/7784 , H01L29/7786 , H01L29/7787 , H01L29/78 , H01L29/7831
摘要： A device with N-Channel and P-Channel III-Nitride field effect transistors comprising a non-inverted P-channel III-Nitride field effect transistor on a first nitrogen-polar nitrogen face III-Nitride material, a non-inverted N-channel III-Nitride field effect transistor, epitaxially grown, a first III-Nitride barrier layer, two-dimensional hole gas, second III-Nitride barrier layer, and a two-dimensional hole gas. A method of making complementary non-inverted P-channel and non-inverted N-channel III-Nitride FET comprising growing epitaxial layers, depositing oxide, defining opening, growing epitaxially a first nitrogen-polar III-Nitride material, buffer, back barrier, channel, spacer, barrier, and cap layer, and carrier enhancement layer, depositing oxide, growing AlN nucleation layer/polarity inversion layer, growing gallium-polar III-Nitride, including epitaxial layers, depositing dielectric, fabricating P-channel III-Nitride FET, and fabricating N-channel III-Nitride FET.
摘要翻译：具有N沟道和P沟道III氮化物场效应晶体管的器件包括在第一氮极氮氮III氮化物材料上的非反相P沟道III-氮化物场效应晶体管，非反相N沟道 III-氮化物场效应晶体管，外延生长，第一III-氮化物阻挡层，二维空穴气体，第二III-氮化物阻挡层和二维空穴气体。制造互补的非反相P沟道和非反相N沟道III氮化物FET的方法，其包括生长外延层，沉积氧化物，限定开口，外延生长第一氮极III-氮化物材料，缓冲层，背部阻挡层，通道，间隔物，阻挡层和覆盖层，载流子增强层，沉积氧化物，生长AlN成核层/极性反转层，生长中的镓极性III-氮化物，包括外延层，沉积电介质，制造P沟道III-氮化物FET ，并制造N沟道III型氮化物FET。

10. 发明申请

US20130306988A1 DIAMOND AND DIAMOND COMPOSITE MATERIAL 有权
标题翻译：金刚石和金刚石复合材料
公开(公告)号：US20130306988A1
公开(公告)日：2013-11-21
申请号：US13899433
申请日：2013-05-21
申请人： Francis J. Kub , Charles R. Eddy, Jr. , Boris N. Feygelson , Scooter Johnson
发明人： Francis J. Kub , Charles R. Eddy, Jr. , Boris N. Feygelson , Scooter Johnson
IPC分类号： H01L29/16 , H01L21/04
CPC分类号： H01L29/1602 , C23C24/082 , H01L21/02444 , H01L21/0245 , H01L21/02507 , H01L21/02513 , H01L21/02527 , H01L21/02601 , H01L21/0262 , H01L21/02628 , H01L21/0405
摘要： A structure having: a substrate and a diamond layer on the substrate having diamond nanoparticles. The diamond nanoparticles are formed by colliding diamond particles with the substrate. A method of: directing an aerosol of submicron diamond particles toward a substrate, and forming on the substrate a diamond layer of diamond nanoparticles formed by the diamond particles colliding with the substrate.
摘要翻译：一种结构，其具有：具有金刚石纳米颗粒的基底和金刚石层。金刚石纳米颗粒是通过将金刚石颗粒与基底相撞形成的。一种方法：将亚微米金刚石颗粒的气溶胶引向衬底，并在衬底上形成由金刚石颗粒与衬底碰撞形成的金刚石纳米颗粒的金刚石层。

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