专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20220357445A1 DISTANCE IMAGE MEASURING DEVICE 有权
公开(公告)号：US20220357445A1
公开(公告)日：2022-11-10
申请号：US17621386
申请日：2020-06-24
申请人： NATIONAL UNIVERSITY CORPORATION SHIZUOKA UNIVERSITY
发明人： Shoji KAWAHITO
IPC分类号： G01S17/10 , G01S7/487 , G01S7/4863 , G01S7/4865
摘要： A distance image sensor including a light source that generates pulsed light, a light source control means that controls the light source, a pixel circuit including a photoelectric conversion region, charge reading regions, a charge discharging region, and control electrodes, a charge transfer control means that outputs control pulses to the control electrodes, and a distance calculation means that reads voltages of the charge reading regions as detection signals and repeatedly calculates a distance on the basis of the detection signals. The charge transfer control means sets a timing at which the control pulse is output to be before a timing at which the pulsed light is generated.

2. 发明申请

US20190206915A1 PHOTOELECTRIC CONVERSION ELEMENT AND SOLID-STATE IMAGE CAPTURING DEVICE 审中-公开
公开(公告)号：US20190206915A1
公开(公告)日：2019-07-04
申请号：US16327364
申请日：2017-08-24
申请人： National University Corporation Shizuoka University
发明人： Shoji KAWAHITO , Min-Woong SEO , Keita YASUTOMI , Yuya SHIRAKAWA
IPC分类号： H01L27/146 , H04N5/378 , H04N5/3745
CPC分类号： H01L27/14616 , H01L27/146 , H01L27/14607 , H01L31/10 , H04N5/361 , H04N5/363 , H04N5/369 , H04N5/374 , H04N5/3745 , H04N5/378
摘要： In a photoelectric-conversion element having a large light receiving region for a high-speed transfer, and a solid-state image sensor including the photoelectric-conversion element, the photoelectric-conversion element includes first to eighth charge read-out regions, which are provided at positions symmetric with respect to a center position of a light receiving region and first to eighth field-control electrodes, which are arranged on both sides of charge-transport paths extending from the center position of the light receiving region to the first to eighth charge read-out regions, respectively, and change depletion potentials of the charge-transport paths and the octuple charge-transfer channels.

3. 发明申请

US20220417455A1 IMAGING DEVICE 有权
公开(公告)号：US20220417455A1
公开(公告)日：2022-12-29
申请号：US17779160
申请日：2020-11-25
申请人： NATIONAL UNIVERSITY CORPORATION SHIZUOKA UNIVERSITY , NATIONAL UNIVERSITY CORPORATION GUNMA UNIVERSITY
发明人： Shoji KAWAHITO , Hiromasa OKU
IPC分类号： H04N5/351 , H04N5/3745 , G02B7/28
摘要： An imaging device includes a varifocal lens and an imaging sensor which outputs a signal corresponding to light. The imaging sensor includes a photoelectric conversion unit which converts light into an electric charge, electric charge reading regions, transfer control electrodes, a gate control circuit which sequentially applies control signals to the transfer control electrodes to correspond to the position of the focal point of the varifocal lens, and a reading circuit which outputs a signal corresponding to the amount of the electric charge transferred to the electric charge reading regions. The gate control circuit repeats an operation of outputting each of the control signals when the position of the focal point is located in the focal ranges during a frame period.

4. 发明申请

US20210175264A1 PHOTOELECTRIC CONVERSION ELEMENT AND SOLID-STATE IMAGING DEVICE 有权
公开(公告)号：US20210175264A1
公开(公告)日：2021-06-10
申请号：US16770615
申请日：2018-12-07
申请人： National University Corporation Shizuoka University
发明人： Shoji KAWAHITO
IPC分类号： H01L27/146 , H01L31/111
摘要： A photoelectric conversion element encompasses a depletion-layer extension-promotion region having a p-type upper layer, a p-type photoelectric conversion layer in contact with the depletion-layer extension-promotion region, and an n-type surface-buried region buried in an upper portion of the photoelectric conversion layer, configured to implement a photodiode together with the photoelectric conversion layer. A first p-well is surrounded by a first n-tab, the first n-tab is surrounded by a second p-well, the second p-well is surrounded by a second n-tab, and the second n-tab is surrounded by a third p-well. An injection-blocking element blocks injection of carriers of opposite conductivity type to signal charges from the second p-well into the photoelectric conversion layer, and the inside of the photoelectric conversion layer is depleted by a voltage applied to the depletion-layer extension-promotion region.

5. 发明申请

US20190268557A1 A/D CONVERTER 审中-公开
公开(公告)号：US20190268557A1
公开(公告)日：2019-08-29
申请号：US16349016
申请日：2017-11-09
申请人： NATIONAL UNIVERSITY CORPORATION SHIZUOKA UNIVERSITY
发明人： Shoji KAWAHITO
IPC分类号： H04N5/378 , H03M1/14 , H03M1/38 , H04N5/376
摘要： An A/D converter 1 includes a front stage A/D conversion unit (3) including a first A/D conversion unit (6) that receives an analog signal from a CMOS image sensor (100) and generates a first digital value (D1) and a first residual analog signal (VOPF) through a folding integration A/D conversion operation, and a second A/D conversion unit (7) that receives a first residual analog signal (VOPF) from the first A/D conversion unit (6) and generates a second digital value (D2) and a second residual analog signal (VOPC) through a cyclic A/D conversion operation, and a rear stage A/D conversion unit (4) that receives the second residual analog signal (VOPC) from the front stage A/D conversion unit (3) and generates a third digital value (D3) through an acyclic A/D conversion operation.

6. 发明申请

US20180114809A1 RANGE SENSOR AND SOLID-STATE IMAGING DEVICE 审中-公开
公开(公告)号：US20180114809A1
公开(公告)日：2018-04-26
申请号：US15562965
申请日：2016-03-31
申请人： National University Corporation Shizuoka University
发明人： Shoji KAWAHITO
IPC分类号： H01L27/146 , H04N5/3745 , H04N5/361
CPC分类号： H01L27/14638 , G01S7/481 , H01L27/144 , H01L27/146 , H01L27/14605 , H01L27/14623 , H01L27/14643 , H01L31/10 , H04N5/361 , H04N5/369 , H04N5/374 , H04N5/3745
摘要： A range sensor includes: an n-type surface-buried region selectively buried in an upper portion of a pixel layer to implement a photodiode and extending from a light-receiving area toward plural portions shielded by a shielding plate along the upper portion of the pixel layer so as to provide a plurality of branches; n-type charge-accumulation regions having a higher impurity concentration than the surface-buried region; a plurality of transfer gate electrodes provided adjacent to the charge-accumulation regions; and an n-type guide region having a higher impurity concentration than the surface-buried region and a lower impurity concentration than the charge-accumulation regions, and provided with one end below an aperture of the shielding plate and other ends extending to a part of the respective transfer gate electrodes.

7. 发明申请

US20160353045A1 IMAGE SENSOR 有权
标题翻译：图像传感器
公开(公告)号：US20160353045A1
公开(公告)日：2016-12-01
申请号：US15116732
申请日：2015-02-06
申请人： NATIONAL UNIVERSITY CORPORATION SHIZUOKA UNIVERSITY
发明人： Shoji KAWAHITO , Keita YASUTOMI
IPC分类号： H04N5/376 , G01S17/89 , H04N5/225
CPC分类号： H04N5/3765 , G01S7/4863 , G01S17/89 , H01L27/14609 , H01L27/14806 , H04N5/2256 , H04N5/374
摘要： A high-accurate imaging increased in time resolution can be made. The camera device is provided with a plurality of pixels that include a light-receiving surface embedded region to convert incident light into charges, a charge accumulation region to accumulate the charges, and a gate electrode to control the charges to be transferred from the light-receiving surface embedded region to the charge accumulation region, and are one-dimensionally arranged in each of a plurality of columns, a timing generation circuit which generates a control pulse voltage to be applied to the gate electrode, and a correction circuit unit which is provided in accordance with each of a plurality of columns of the pixels, delays the control pulse voltage in a variable time, and applies the control pulse voltage to the gate electrodes of the plurality of pixels belonging to a column corresponding to the control pulse voltage.
摘要翻译：可以提高时间分辨率的高精度成像。相机装置设置有多个像素，其包括受光面嵌入区域以将入射光转换成电荷，电荷累积区域以积累电荷;以及栅电极，用于控制从发光元件转移的电荷，接收表面嵌入区域到电荷累积区域，并且被一维地布置在多个列中的每一列中;定时产生电路，其产生施加到栅电极的控制脉冲电压;以及校正电路单元，根据多个像素列中的每一个，在可变时间延迟控制脉冲电压，并且将控制脉冲电压施加到属于对应于控制脉冲电压的列的多个像素的栅电极。

8. 发明申请

US20220075070A1 DISTANCE IMAGE MEASUREMENT DEVICE, DISTANCE IMAGE MEASUREMENT SYSTEM, AND DISTANCE IMAGE MEASUREMENT METHOD 有权
公开(公告)号：US20220075070A1
公开(公告)日：2022-03-10
申请号：US17422775
申请日：2020-01-10
申请人： NATIONAL UNIVERSITY CORPORATION SHIZUOKA UNIVERSITY
发明人： Shoji KAWAHITO
IPC分类号： G01S17/894 , H04N5/378 , H04N5/369 , G01S7/484 , G01S7/4865
摘要： A distance image sensor includes a light source that generates pulsed light, a light source controller that controls the light source, a pixel circuit including a photoelectric conversion region, charge readout regions, and control electrodes, a charge transfer controller that sequentially applies control pulses to the control electrodes, a signal readout circuit that reads out detection signals of an amount of charge transferred to the charge readout regions and a distance calculator that repeatedly calculates a distance from a difference value between two amounts of charge on the basis of the signals, the light source controller changes generation timing of the pulsed light according to a pseudo random number, and the charge transfer controller changes timings of the application of two control pulses for transferring charge corresponding to the two amounts of charge according to the pseudo random number so that the timings are replaced with each other.

9. 发明申请

US20210199609A1 SOIL SENSOR AND SOIL MEASUREMENT METHOD 有权
公开(公告)号：US20210199609A1
公开(公告)日：2021-07-01
申请号：US16756885
申请日：2018-10-17
申请人： NATIONAL UNIVERSITY CORPORATION SHIZUOKA UNIVERSITY
发明人： Masato FUTAGAWA , Shoji KAWAHITO , Keita YASUTOMI
IPC分类号： G01N27/02 , G01K7/00 , G01N33/24
摘要： A soil sensor includes a current supply unit, an electrode disposed in soil, and a processing unit that obtains a water content and a total ion concentration in the soil. The processing unit includes an information conversion unit that converts a first time and a second time until the measured voltage reaches first threshold voltages and second threshold voltages into frequency information using the temporal change of the measured voltage, an impedance calculation unit that obtains the impedance of the soil, a water content calculation unit that obtains the water content using the impedance, and a total ion concentration calculation unit that obtains the total ion concentration using the impedance.

10. 发明申请

US20200312902A1 CHARGE MODULATION ELEMENT AND SOLID-STATE IMAGING DEVICE 审中-公开
公开(公告)号：US20200312902A1
公开(公告)日：2020-10-01
申请号：US16770616
申请日：2018-12-07
申请人： National University Corporation Shizuoka University
发明人： Shoji KAWAHITO
IPC分类号： H01L27/146 , H04N5/369 , H01L31/10
摘要： A charge-modulation element encompasses a p-type photoelectric-conversion layer, a n-type surface-buried region buried in an upper portion of the photoelectric-conversion layer configured to implement a photodiode with the photoelectric-conversion layer, a n-type modulation region buried in another part of the upper portion of the photoelectric-conversion layer configured to implement a part of the photodiode with the photoelectric-conversion layer, potential-control regions assigned in one of divided areas, n-type charge-accumulation regions configured to accumulate signal charges generated in the photodiode. Potentials in the modulation region and the surface-buried region are controlled by route-select signals applied to the potential-control regions so as to select one of the charge-transport routes, which transfers the signal charges toward one of the charge-accumulation regions.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式