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1. 发明授权

US5327445A Quantum-well type semiconductor laser device 失效
标题翻译：量子阱型半导体激光器件
公开(公告)号：US5327445A
公开(公告)日：1994-07-05
申请号：US854646
申请日：1992-07-09
申请人： Narihito Matsumoto , Akihiko Kasukawa , Takeshi Namegaya , Hiroshi Okamoto
发明人： Narihito Matsumoto , Akihiko Kasukawa , Takeshi Namegaya , Hiroshi Okamoto
IPC分类号： H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： H01S5/3434 , B82Y20/00 , H01S5/34 , H01S2301/18 , H01S5/3421 , H01S5/34306
摘要： In a quantum-well type semiconductor laser device comprising a multi-layered quantum-well layer (active layer) constituted by quantum-well layers and a corresponding number of barrier layers and a pair of optical confinement layers respectively arranged on and under the active layer, since the number of quantum-well layers is limited to one or two, the device has a reduced internal loss, a narrowed far-field angle and a bandgap energy of the quantum-well layers greater than that of the optical confinement layers by more than 160 meV so that it shows a lowered threshold current density. Besides, by selecting a thickness of the quantum-well layers between 3 and 8 nm, the device can be made to oscillate at the first quantum level in order to make the oscillation wavelength highly dependent on temperature and optical output and accordingly produce a high spectral purity.
摘要翻译： PCT No.PCT / JP91 / 01213 Sec。 371日期：1992年7月9日 102（e）日期1992年7月9日PCT 1991年9月12日PCT PCT。公开号WO92 / 04753 日期：1992年3月19日。在包括由量子阱层和相应数量的势垒层和一对光限制层构成的多层量子阱层（有源层）的量子阱型半导体激光器件中，布置在有源层上和下面，由于量子阱层的数量被限制为一个或两个，器件具有减小的内部损耗，窄的远场角和量子阱层的带隙能量大于的光限制层超过160meV，使得其显示出降低的阈值电流密度。此外，通过选择3和8nm之间的量子阱层的厚度，可以使器件在第一量子电平处振荡，以使振荡波长高度依赖于温度和光输出，从而产生高光谱纯度。

2. 发明授权

US5657337A Semiconductor laser device having a resonator of a particular length for reducing threshold current density 失效
标题翻译：具有用于降低阈值电流密度的具有特定长度的谐振器的半导体激光器件
公开(公告)号：US5657337A
公开(公告)日：1997-08-12
申请号：US629655
申请日：1996-04-09
申请人： Toshiyuki Okumura , Fumihiro Konushi , Tatsuya Morioka , Narihito Matsumoto
发明人： Toshiyuki Okumura , Fumihiro Konushi , Tatsuya Morioka , Narihito Matsumoto
IPC分类号： H01S5/227 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/34 , H01S2301/18 , H01S5/227 , H01S5/2275 , H01S5/3415 , H01S5/34306 , H01S5/3434
摘要： A semiconductor laser device includes a substrate and a laminated structure formed on a top face of the substrate. The laminated structure includes (a) first and second guide layers and (b) a quantum well structure of compound semiconductor interposed between the first and second guide layers. The quantum well structure serves as a resonator of the device and includes at least one quantum well layer and at least one barrier layer. The quantum well layer has a thickness L.sub.z and the barrier layer has the energy gap larger than the energy gap of the quantum well layer so as to form a energy difference V.sub.0 between the bottom of the conduction band of the quantum well layer and the bottom of the conduction band of the barrier layer. The relationship represented by formula (I) is satisfied:L.sub.z .ltoreq.h / 2 (2m*V.sub.0).sup.1/2 (I)wherein h is Planck's constant and m* is the effective mass of electrons within the quantum well layer.
摘要翻译：半导体激光装置包括基板和形成在基板顶面上的叠层结构。层压结构包括（a）第一和第二引导层和（b）置于第一和第二引导层之间的化合物半导体的量子阱结构。量子阱结构用作器件的谐振器，并且包括至少一个量子阱层和至少一个势垒层。量子阱层具有厚度Lz，势垒层的能隙大于量子阱层的能隙，从而在量子阱层的导带的底部和底部的量子阱层的底部之间形成能量差V0 阻挡层的导带。满足式（I）表示的关系：Lz

3. 发明授权

US5506856A Semiconductor laser device having a resonator of particular length for reduced threshold current density 失效
标题翻译：具有特定长度的谐振器以降低阈值电流密度的半导体激光器件
公开(公告)号：US5506856A
公开(公告)日：1996-04-09
申请号：US307184
申请日：1994-11-17
申请人： Toshiyuki Okumura , Fumihiro Konushi , Tatsuya Morioka , Narihito Matsumoto
发明人： Toshiyuki Okumura , Fumihiro Konushi , Tatsuya Morioka , Narihito Matsumoto
IPC分类号： H01S5/227 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/34 , H01S2301/18 , H01S5/227 , H01S5/2275 , H01S5/3415 , H01S5/34306 , H01S5/3434
摘要： A semiconductor laser device includes a substrate and a laminated structure formed on a top face of the substrate. The laminated structure includes (a) first and second guide layers and (b) a quantum well structure of compound semiconductor interposed between the first and second guide layers. The quantum well structure serves as a resonator of the device and includes at least one quantum well layer and at least one barrier layer. The quantum well layer has a thickness L.sub.z and the barrier layer has the energy gap larger than the energy gap of the quantum well layer so as to form a energy difference V.sub.O between the bottom of the conduction band of the quantum well layer and the bottom of the conduction band of the barrier layer. The relationship represented by formula (I) is satisfied:L.sub.z .ltoreq.h / 2 (2m.sup.* V.sub.O).sup.1/2 (I)wherein h is Planck's constant and m.sup.* is the effective mass of electrons within the quantum well layer.
摘要翻译：半导体激光装置包括基板和形成在基板顶面上的叠层结构。层压结构包括（a）第一和第二引导层和（b）置于第一和第二引导层之间的化合物半导体的量子阱结构。量子阱结构用作器件的谐振器，并且包括至少一个量子阱层和至少一个势垒层。量子阱层具有厚度Lz，势垒层的能隙大于量子阱层的能隙，从而形成量子阱层的导带的底部与底部的能量差V o 阻挡层的导带。满足公式（I）表示的关系：Lz

4. 发明授权

US06595701B2 Laser diode module 有权
公开(公告)号：US06595701B2
公开(公告)日：2003-07-22
申请号：US10015635
申请日：2001-12-17
申请人： Kohei Terada , Takeshi Nagao , Narihito Matsumoto
发明人： Kohei Terada , Takeshi Nagao , Narihito Matsumoto
IPC分类号： G02B642
CPC分类号： G02B6/4225 , G02B6/4204 , G02B6/4237 , G02B6/424 , G02B6/4244 , G02B6/4263 , G02B6/4266 , G02B6/4269 , G02B6/4286
摘要： A laser diode module has a laser diode, a lens for condensing the laser beam from the laser diode, an optical fiber for receiving the laser beam from the lens at the end face thereof, and support assembly for supporting the laser diode, the lens, and optical fiber, the support assembly positions the end face of the optical fiber at a deviation position apart from the focal point of the lens by an allowable distance when a temperature of the laser diode module is room temperature and moves the end face of the optical fiber at a close position relatively closer to the focal point than the deviation position when the temperature of the laser diode module rises from the room temperature.

5. 发明授权

US5375135A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5375135A
公开(公告)日：1994-12-20
申请号：US48887
申请日：1993-04-15
申请人： Toshiyuki Okumura , Fumihiro Konushi , Tatsuya Morioka , Narihito Matsumoto
发明人： Toshiyuki Okumura , Fumihiro Konushi , Tatsuya Morioka , Narihito Matsumoto
IPC分类号： H01S5/10 , H01S5/227 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/34 , H01S2301/18 , H01S5/1039 , H01S5/227 , H01S5/2275 , H01S5/3415 , H01S5/3421 , H01S5/34306 , H01S5/3434
摘要： A semiconductor laser device includes a substrate and a laminated structure formed on a top face of the substrate. The laminated structure includes (a) first and second guide layers and (b) a quantum well structure of compound semiconductor interposed between the first and second guide layers. The quantum well structure serves as a resonator of the device and includes at least one quantum well layer and at least one barrier layer. The quantum well layer has a thickness L.sub.z and the barrier layer has the energy gap larger than the energy gap of the quantum well layer so as to form a energy difference V.sub.0 between the bottom of the conduction band of the quantum well layer and the bottom of the conduction band of the barrier layer. The relationship represented by formula (I) is satisfied:L.sub.z
摘要翻译：半导体激光装置包括基板和形成在基板顶面上的叠层结构。层压结构包括（a）第一和第二引导层和（b）置于第一和第二引导层之间的化合物半导体的量子阱结构。量子阱结构用作器件的谐振器，并且包括至少一个量子阱层和至少一个势垒层。量子阱层具有厚度Lz，势垒层的能隙大于量子阱层的能隙，从而在量子阱层的导带的底部和底部的量子阱层的底部之间形成能量差V0 阻挡层的导带。满足式（I）所示的关系：Lz

6. 发明授权

US5351258A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5351258A
公开(公告)日：1994-09-27
申请号：US99206
申请日：1993-07-29
申请人： Toshiyuki Okumura , Fumihiro Konushi , Tatsuya Morioka , Narihito Matsumoto
发明人： Toshiyuki Okumura , Fumihiro Konushi , Tatsuya Morioka , Narihito Matsumoto
IPC分类号： H01S5/00 , H01S5/028 , H01S5/22 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/22 , H01S5/34306 , H01S5/34313
摘要： A semiconductor laser device of the present invention includes: a semiconductor substrate having a top face and a bottom face; a multi-layered structure formed on the top face of the semiconductor substrate, the multi-layered structure including an active layer; a stripe-shaped ridge portion which is formed on a first region of a top face of the multi-layered structure and which extends along a cavity length direction; a current blocking layer which covers both side faces of the ridge portion and a second region of the top face of the multi-layered structure; a first electrode formed at least on a top face of the ridge portion; and a second electrode formed on the bottom face of the semiconductor substrate, wherein the current blocking layer includes an insulating film and a resin film formed on the insulating film.
摘要翻译：本发明的半导体激光器件包括：具有顶面和底面的半导体衬底; 形成在所述半导体衬底的顶面上的多层结构，所述多层结构包括有源层; 形成在所述多层结构的顶面的第一区域上且沿着空腔长度方向延伸的条状的脊部; 覆盖所述脊部的两个侧面的电流阻挡层和所述多层结构的顶面的第二区域; 至少形成在所述脊部的顶面上的第一电极; 以及形成在所述半导体衬底的底面上的第二电极，其中所述电流阻挡层包括绝缘膜和形成在所述绝缘膜上的树脂膜。

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