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    • 10. 发明授权
    • Voltage transferring device capable of holding boost voltage and
transferring in high speed boost voltage
    • 能够保持升压电压并以高速提升电压传输的电压传输装置
    • US5874855A
    • 1999-02-23
    • US834941
    • 1997-04-07
    • Mitsuhiro AzumaFrank Matthews
    • Mitsuhiro AzumaFrank Matthews
    • G11C11/407G05F3/24H01L21/822H01L21/8238H01L27/04H01L27/092G05F1/10G05F3/02
    • G05F3/247
    • In a voltage transferring device connected between a voltage supplying section and a voltage receiving section, the voltage supplying section supplies, in a transferring period, a boost voltage having a boost level to the voltage receiving section. The voltage supplying section has, in a non-transferring period, a non-transferring voltage which has a non-transferring level smaller than the boost level. A transferring field effect transistor has a source electrode connected to the voltage supplying section and a drain electrode connected to the voltage receiving section. A controlling circuit is connected to a substrate electrode of the transferring FET. The voltage controlling circuit supplies, in the transferring period, a high voltage having the boost level to the substrate electrode of the transferring FET. The controlling circuit supplies, in the non-transferring period, a low voltage having the non-transferring level to the substrate electrode of the transferring FET. The controlling circuit comprises first and second FETs. The first FET has a drain electrode connected to the source electrode of the transferring FET and a source electrode connected to the substrate electrode of the transferring FET. The second FET has a source electrode connected to the substrate electrode of the transferring FET and a drain electrode connected to the drain electrode of the transferring FET.
    • 在连接在电压供给部和电压接收部之间的电压传输装置中,电压供给部在转移期间向电压接收部提供具有升压电平的升压电压。 电压供给部在非转移期间具有非转移电压小于升压电平的非转移电压。 传输场效应晶体管具有连接到电压提供部分的源电极和连接到电压接收部分的漏电极。 控制电路连接到转移FET的基板电极。 电压控制电路在转印期间向转印FET的基板电极提供具有升压电平的高电压。 控制电路在非转移期间向转移FET的基板电极提供具有非转移电平的低电压。 控制电路包括第一和第二FET。 第一FET具有连接到转移FET的源电极的漏电极和连接到转移FET的衬底电极的源电极。 第二FET具有连接到转移FET的基板电极的源电极和连接到转移FET的漏电极的漏电极。