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1. 发明申请

US20070118341A1 SIMULATION APPARATUS, SIMULATION METHOD, AND COMPUTER PROGRAM PRODUCT 有权
标题翻译：模拟装置，模拟方法和计算机程序产品
公开(公告)号：US20070118341A1
公开(公告)日：2007-05-24
申请号：US11556828
申请日：2006-11-06
申请人： Naoki Tamaoki , Akio Ui , Toshiro Takase , Takashi Ichikawa
发明人： Naoki Tamaoki , Akio Ui , Toshiro Takase , Takashi Ichikawa
IPC分类号： G06F17/10
CPC分类号： G06F17/5018 , C23C14/54 , C23C16/52 , G06F2217/10
摘要： A calculating unit calculates either one of a reaction probability between a chemical species used in a semiconductor process and a semiconductor device and a deactivation probability of the chemical species, according to either one of a structure of the semiconductor device and a plurality of materials. A simulation unit performs a simulation of a physical phenomenon occurring in a reaction chamber based on either one of the reaction probability and the deactivation probability.
摘要翻译：计算单元根据半导体器件的结构和多种材料中的任一种，计算半导体工艺中使用的化学物质与半导体器件之间的反应概率和化学物质的失活概率之一。模拟单元基于反应概率和去激活概率中的任何一个对反应室中发生的物理现象进行模拟。

2. 发明授权

US08548787B2 Simulating a chemical reaction phenomenon in a semiconductor process 有权
标题翻译：模拟半导体工艺中的化学反应现象
公开(公告)号：US08548787B2
公开(公告)日：2013-10-01
申请号：US11556828
申请日：2006-11-06
申请人： Naoki Tamaoki , Akio Ui , Toshiro Takase , Takashi Ichikawa
发明人： Naoki Tamaoki , Akio Ui , Toshiro Takase , Takashi Ichikawa
IPC分类号： G06G7/58
CPC分类号： G06F17/5018 , C23C14/54 , C23C16/52 , G06F2217/10
摘要： A calculating unit calculates either one of a reaction probability between a chemical species used in a semiconductor process and a semiconductor device and a deactivation probability of the chemical species, according to either one of a structure of the semiconductor device and a plurality of materials. A simulation unit performs a simulation of a physical phenomenon occurring in a reaction chamber based on either one of the reaction probability and the deactivation probability.
摘要翻译：计算单元根据半导体器件的结构和多种材料中的任一种，计算半导体工艺中使用的化学物质与半导体器件之间的反应概率和化学物质的失活概率之一。模拟单元基于反应概率和去激活概率中的任何一个对反应室中发生的物理现象进行模拟。

3. 发明申请

US20090048813A1 SIMULATION METHOD AND SIMULATION PROGRAM 审中-公开
标题翻译：模拟方法和仿真程序
公开(公告)号：US20090048813A1
公开(公告)日：2009-02-19
申请号：US12192197
申请日：2008-08-15
申请人： Takashi Ichikawa , Naoki Tamaoki , Toshiro Takase
发明人： Takashi Ichikawa , Naoki Tamaoki , Toshiro Takase
IPC分类号： G06F17/10
CPC分类号： G06F17/5018
摘要： A simulation method is configured to simulate a feature profile of a material surface. The simulation method includes using an algorithm of repeating a step of calculating a surface growth rate and a step of skipping the calculation of the surface growth rate. The surface growth rate is calculated in the step of skipping the calculation of the algorithm if the material surface traverses a material interface.
摘要翻译：模拟方法被配置为模拟材料表面的特征轮廓。模拟方法包括使用重复计算表面生长速率的步骤的算法和跳过表面生长速率的计算的步骤。如果材料表面穿过材料界面，则在跳过算法计算的步骤中计算出表面生长速率。

4. 发明申请

US20090055143A1 SIMULATION METHOD AND SIMULATION PROGRAM 有权
标题翻译：模拟方法和仿真程序
公开(公告)号：US20090055143A1
公开(公告)日：2009-02-26
申请号：US12192179
申请日：2008-08-15
申请人： Takashi Ichikawa , Naoki Tamaoki , Toshiro Takase
发明人： Takashi Ichikawa , Naoki Tamaoki , Toshiro Takase
IPC分类号： G06F17/10
CPC分类号： G06F17/5018
摘要： A simulation method includes dividing a material surface into finite computational elements, and calculating a deposition rate or etching rate at each of the computational elements to simulate a feature profile of the material surface, the calculating including calculating an indirect effect of a first computational element on the deposition rate or etching rate of a second computational element. The calculating the indirect effect includes correcting a surface profile at the first computational element on the basis of a surface structure around the first computational element, and calculating the indirect effect on the basis of the corrected surface profile at the first computational element.
摘要翻译：一种模拟方法包括将材料表面划分为有限计算元件，以及计算每个计算元件上的沉积速率或蚀刻速率以模拟材料表面的特征轮廓，所述计算包括计算第一计算元素的间接效应第二计算元件的沉积速率或蚀刻速率。计算间接效应包括基于围绕第一计算元件的表面结构来校正第一计算元件处的表面轮廓，以及基于第一计算元件处的校正表面轮廓计算间接效应。

5. 发明授权

US08209155B2 Simulation method and simulation program 有权
标题翻译：仿真方法和仿真程序
公开(公告)号：US08209155B2
公开(公告)日：2012-06-26
申请号：US12192179
申请日：2008-08-15
申请人： Takashi Ichikawa , Naoki Tamaoki , Toshiro Takase
发明人： Takashi Ichikawa , Naoki Tamaoki , Toshiro Takase
IPC分类号： G06F7/60 , G06F17/10
CPC分类号： G06F17/5018
摘要： A simulation method includes dividing a material surface into finite computational elements, and calculating a deposition rate or etching rate at each of the computational elements to simulate a feature profile of the material surface, the calculating including calculating an indirect effect of a first computational element on the deposition rate or etching rate of a second computational element. The calculating the indirect effect includes correcting a surface profile at the first computational element on the basis of a surface structure around the first computational element, and calculating the indirect effect on the basis of the corrected surface profile at the first computational element.
摘要翻译：一种模拟方法包括将材料表面划分为有限计算元件，以及计算每个计算元件上的沉积速率或蚀刻速率以模拟材料表面的特征轮廓，所述计算包括计算第一计算元素的间接效应第二计算元件的沉积速率或蚀刻速率。计算间接效应包括基于围绕第一计算元件的表面结构来校正第一计算元件处的表面轮廓，以及基于第一计算元件处的校正表面轮廓计算间接效应。

6. 发明授权

US08252193B2 Plasma processing apparatus of substrate and plasma processing method thereof 有权
标题翻译：基板等离子体处理装置及其等离子体处理方法
公开(公告)号：US08252193B2
公开(公告)日：2012-08-28
申请号：US12052522
申请日：2008-03-20
申请人： Akio Ui , Takashi Ichikawa , Naoki Tamaoki , Hisataka Hayashi , Akihiro Kojima
发明人： Akio Ui , Takashi Ichikawa , Naoki Tamaoki , Hisataka Hayashi , Akihiro Kojima
IPC分类号： G01R31/00 , H01L21/302 , H01L21/461
CPC分类号： H01L21/3065 , H01J37/32091 , H01J37/32137 , H01J37/32165
摘要： A substrate plasma processing apparatus includes a chamber of which an interior is evacuated under a predetermined vacuum condition; an RF electrode which is disposed in the chamber and configured so as to hold a substrate to be processed on a main surface thereof; an opposing electrode which is disposed opposite to the RF electrode in the chamber; an RF voltage applying device for applying an RF voltage with a predetermined frequency to the RF electrode; and a pulsed voltage applying device for applying a pulsed voltage to the RF electrode so as to be superimposed with the RF voltage and which includes a controller for controlling a timing in application of the pulsed voltage and defining a pause period of the pulsed voltage.
摘要翻译：基板等离子体处理装置包括在预定的真空条件下将内部抽真空的室; RF电极，其设置在所述室中并且构造成在其主表面上保持要处理的基板; 在所述室中与所述RF电极相对设置的对置电极; RF电压施加装置，用于向RF电极施加预定频率的RF电压; 以及脉冲电压施加装置，用于向RF电极施加脉冲电压以与RF电压叠加，并且包括用于控制施加脉冲电压的定时并且限定脉冲电压的暂停时段的控制器。

7. 发明申请

US20080237185A1 PLASMA PROCESSING APPARATUS OF SUBSTRATE AND PLASMA PROCESSING METHOD THEREOF 有权
标题翻译：基板等离子体处理装置及其等离子体处理方法
公开(公告)号：US20080237185A1
公开(公告)日：2008-10-02
申请号：US12052522
申请日：2008-03-20
申请人： Akio UI , Takashi Ichikawa , Naoki Tamaoki , Hisataka Hayashi , Akihiro Kojima
发明人： Akio UI , Takashi Ichikawa , Naoki Tamaoki , Hisataka Hayashi , Akihiro Kojima
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32091 , H01J37/32137 , H01J37/32165
摘要： A substrate plasma processing apparatus includes a chamber of which an interior is evacuated under a predetermined vacuum condition; an RF electrode which is disposed in the chamber and configured so as to hold a substrate to be processed on a main surface thereof; an opposing electrode which is disposed opposite to the RF electrode in the chamber; an RF voltage applying device for applying an RF voltage with a predetermined frequency to the RF electrode; and a pulsed voltage applying device for applying a pulsed voltage to the RF electrode so as to be superimposed with the RF voltage and which includes a controller for controlling a timing in application of the pulsed voltage and defining a pause period of the pulsed voltage.
摘要翻译：基板等离子体处理装置包括在预定的真空条件下将内部抽真空的室; RF电极，其设置在所述室中并且构造成在其主表面上保持要处理的基板; 在所述室中与所述RF电极相对设置的对置电极; RF电压施加装置，用于向RF电极施加预定频率的RF电压; 以及脉冲电压施加装置，用于向RF电极施加脉冲电压以与RF电压叠加，并且包括用于控制施加脉冲电压的定时并且限定脉冲电压的暂停时段的控制器。

8. 发明授权

US08821684B2 Substrate plasma processing apparatus and plasma processing method 有权
标题翻译：基板等离子体处理装置和等离子体处理方法
公开(公告)号：US08821684B2
公开(公告)日：2014-09-02
申请号：US12363070
申请日：2009-01-30
申请人： Akio Ui , Naoki Tamaoki , Takashi Ichikawa , Hisataka Hayashi , Takeshi Kaminatsui , Shinji Himori , Norikazu Yamada , Takeshi Ohse , Jun Abe
发明人： Akio Ui , Naoki Tamaoki , Takashi Ichikawa , Hisataka Hayashi , Takeshi Kaminatsui , Shinji Himori , Norikazu Yamada , Takeshi Ohse , Jun Abe
IPC分类号： C23F1/00 , C23C16/50 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32027 , H01J37/32045 , H01J37/32091
摘要： A substrate plasma processing apparatus includes a substrate holding electrode and a counter electrode which are arranged in a chamber, a high frequency generating device which applies a high frequency of 50 MHZ or higher to the substrate holding electrode, a DC negative pulse generating device which applies a DC negative pulse voltage in a manner of superimposing on the high frequency, and a controller controlling to cause intermittent application of the high frequency and cause intermittent application of the DC negative pulse voltage according to the timing of on or off of the high frequency.
摘要翻译：衬底等离子体处理装置包括布置在腔室中的衬底保持电极和对电极，向衬底保持电极施加50MHz以上的高频的高频发生装置，应用了DC负脉冲发生装置以高频重叠的方式设置直流负脉冲电压，以及控制器，根据高频开启或关闭的定时控制高频频率的间歇施加，直流负脉冲电压的间歇施加。

9. 发明授权

US08545070B2 Door mirror device for a vehicle 有权
标题翻译：车辆后视镜装置
公开(公告)号：US08545070B2
公开(公告)日：2013-10-01
申请号：US12920743
申请日：2009-03-03
申请人： Koji Sakiyama , Mitsuru Kamikatano , Takashi Ichikawa , Bunji Inagaki , Masatsugu Ohashi , Takashi Ichikawa , Kazuya Umino
发明人： Koji Sakiyama , Mitsuru Kamikatano , Takashi Ichikawa , Bunji Inagaki , Masatsugu Ohashi , Takashi Ichikawa , Kazuya Umino
IPC分类号： F21S8/10
CPC分类号： F21S41/24 , B60Q1/2665 , B60R1/1207 , F21S43/14 , F21S43/237 , F21S43/245 , F21S43/249 , F21S43/251 , G02B6/0028 , G02B6/0038 , G02B6/0045 , G02B6/0076 , G02B6/0078
摘要： Disclosed in a door mirror device capable of continuously emitting light from two light guides. The door mirror device comprises: a first light-emitting light guide arranged in the visor part of a door mirror foldably mounted on the door mirror support part of a vehicle; a second light-emitting light guide provided in the door mirror support part, an end of the second light-emitting light guide facing to an end of the first light-emitting light guide so as to have continuity with the first light-emitting light guide; and a light source configured to emit light toward the first light-emitting light guide and the second light-emitting light guide, the light source being provided in the visor part.
摘要翻译：公开在能够连续地从两个光导中发光的门镜装置中。门镜装置包括：第一发光导光器，布置在可折叠地安装在车辆的后视镜支撑部分上的门镜的遮阳板部分中; 设置在车门后视镜支撑部的第二发光导光体，与第一发光导光体的端部相对的第二发光导光体的端部，与第一发光导光体 ; 以及配置为朝向所述第一发光导光体和所述第二发光导光体发光的光源，所述光源设置在所述遮阳板部中。

10. 发明申请

US20110013411A1 Door Mirror Device 有权
标题翻译：门镜装置
公开(公告)号：US20110013411A1
公开(公告)日：2011-01-20
申请号：US12920743
申请日：2009-03-03
申请人： Koji Sakiyama , Mitsuru Kamikatano , Takashi Ichikawa , Bunji Inagaki , Masatsugu Ohashi , Takashi Ichikawa , Kazuya Umino
发明人： Koji Sakiyama , Mitsuru Kamikatano , Takashi Ichikawa , Bunji Inagaki , Masatsugu Ohashi , Takashi Ichikawa , Kazuya Umino
IPC分类号： B60R1/06
CPC分类号： F21S41/24 , B60Q1/2665 , B60R1/1207 , F21S43/14 , F21S43/237 , F21S43/245 , F21S43/249 , F21S43/251 , G02B6/0028 , G02B6/0038 , G02B6/0045 , G02B6/0076 , G02B6/0078
摘要： Disclosed in a door mirror device capable of continuously emitting light from two light guides. The door mirror device comprises: a first light-emitting light guide arranged in the visor part of a door mirror foldably mounted on the door mirror support part of a vehicle; a second light-emitting light guide provided in the door mirror support part, an end of the second light-emitting light guide facing to an end of the first light-emitting light guide so as to have continuity with the first light-emitting light guide; and a light source configured to emit light toward the first light-emitting light guide and the second light-emitting light guide, the light source being provided in the visor part.
摘要翻译：公开在能够连续地从两个光导中发光的门镜装置中。门镜装置包括：第一发光导光器，布置在可折叠地安装在车辆的后视镜支撑部分上的门镜的遮阳板部分中; 设置在车门后视镜支撑部的第二发光导光体，与第一发光导光体的端部相对的第二发光导光体的端部，与第一发光导光体 ; 以及配置为朝向所述第一发光导光体和所述第二发光导光体发光的光源，所述光源设置在所述遮阳板部中。

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