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1. 发明授权

US5719729A Magnetic head and recording and reproducing apparatus having an arrangement for improving coincidence between a magnetic center of a read head and physical center of a write head 失效
标题翻译：磁头和记录和再现装置具有用于改善读头的磁心与写头的物理中心之间的一致性的装置
公开(公告)号：US5719729A
公开(公告)日：1998-02-17
申请号：US990769
申请日：1992-12-15
申请人： Naoki Koyama , Yoshihiro Hamakawa , Isamu Yuitoo , Kanji Kawakami , Kazuo Shiiki , Masahiro Kitada
发明人： Naoki Koyama , Yoshihiro Hamakawa , Isamu Yuitoo , Kanji Kawakami , Kazuo Shiiki , Masahiro Kitada
IPC分类号： G11B5/31 , G11B5/39 , G11B5/265
CPC分类号： G11B5/3967
摘要： In an inductive-write, magnetoresistive-read type magnetic head having a magnetoresistive read head and an inductive write head superimposed on each other, the magnetic center of the read head is made more coincident with the physical center of the write head by a changing of a magnetization direction of a magnetoresistive element. The recording/reproducing apparatus using this magnetic head can thus have a good S/N ratio even if the track width is narrow.
摘要翻译：在具有叠加在一起的磁阻读取头和感应写入头的感应写入磁阻读取型磁头中，通过改变读写头的磁中心使写头的磁心与记录头的物理中心更一致磁阻元件的磁化方向。因此，即使磁道宽度窄，使用该磁头的记录/再现装置也可以具有良好的S / N比。

2. 发明授权

US5461526A Magnetoresistive read head and magnetic storage system using the same 失效
标题翻译：磁阻读头和磁存储系统采用相同的
公开(公告)号：US5461526A
公开(公告)日：1995-10-24
申请号：US36364
申请日：1993-03-24
申请人： Yoshihiro Hamakawa , Toshio Kobayashi , Naoki Koyama , Masahiro Kitada
发明人： Yoshihiro Hamakawa , Toshio Kobayashi , Naoki Koyama , Masahiro Kitada
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , G11B5/399 , G11B5/3967
摘要： A magnetoresistive read head includes a magnetoresistive layer having a central active region and end domain control regions, an electrode layer connected to both ends of the magnetoresistive layer, a pattern for providing a transverse bias to the magnetoresistive layer, a soft magnetic film provided on both sides of the magnetoresistive layer for magnetically shielding the magnetoresistive layer, and a substrate for supporting the magnetoresistive layer, pattern and soft magnetic film. A distance between the two end domain control regions of the magnetoresistive layer indicative of a length of the central active region is smaller than a distance between inner end faces of the electrode layer and the distance between the inner end faces of the magnetoresistive substantially corresponds to a read track width. Since both inner end faces of the magnetoresistive layer are set to coincide with the inner end faces of the electrode layer or to be positioned inside thereof, the magnetoresistive read head can prevent generation of Barkhausen noise with a good yield. Further, a track width is determined substantially by the distance between the inner end faces of the hard magnetic layer so that there can be obtained a magnetoresistive read head which is good in its off-track characteristic as well as a magnetic storage system which uses the read head.
摘要翻译：磁阻读取头包括具有中心有源区和端畴控制区的磁阻层，连接到磁阻层两端的电极层，向磁阻层提供横向偏压的图案，设置在两者上的软磁膜用于磁屏蔽磁阻层的磁阻层的侧面，以及用于支撑磁阻层，图案和软磁膜的基板。指示中心有源区的长度的磁阻层的两个端畴控制区之间的距离小于电极层的内端面之间的距离，并且磁阻的内端面之间的距离基本上对应于读取磁道宽度。由于磁阻层的两个内端面被设定为与电极层的内端面一致或位于其内部，所以磁阻读取头可以以良好的产量来防止产生巴克豪森噪声。此外，轨道宽度基本上由硬磁性层的内端面之间的距离确定，使得可以获得其偏离磁道特性良好的磁阻读取头以及使用该磁性存储系统的磁存储系统读头

3. 发明申请

US20060152862A1 Magnetoresistance effect elements, magnetic heads and magnetic storage apparatus 失效
标题翻译：磁阻效应元件，磁头和磁存储装置
公开(公告)号：US20060152862A1
公开(公告)日：2006-07-13
申请号：US11371244
申请日：2006-03-09
申请人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
发明人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
IPC分类号： G11B5/33
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3967 , G11B2005/0002 , G11B2005/0016 , G11B2005/3996 , H01F10/324 , H01F10/3254 , H01F10/3268 , H01L43/08 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49155
摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
摘要翻译：磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子，从而电流在中间层中流动。构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场穿透特性，穿过中间层。

4. 发明授权

US07054120B2 Magnetic apparatus with perpendicular recording medium and head having multilayered reproducing element using tunneling effect 失效
标题翻译：具有垂直记录介质和头部的磁性装置具有使用隧道效应的多层再现元件
公开(公告)号：US07054120B2
公开(公告)日：2006-05-30
申请号：US10700500
申请日：2003-11-05
申请人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
发明人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3967 , G11B2005/0002 , G11B2005/0016 , G11B2005/3996 , H01F10/324 , H01F10/3254 , H01F10/3268 , H01L43/08 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49155
摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
摘要翻译：磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子，使得电流在中间层中流动。构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场穿透特性，穿过中间层。

5. 发明授权

US06278593B1 Magnetoresistance effect elements and magnetic heads using the tunneling magnetoresistive effect 失效
标题翻译：使用隧道磁阻效应的磁阻效应元件和磁头
公开(公告)号：US06278593B1
公开(公告)日：2001-08-21
申请号：US09468309
申请日：1999-12-21
申请人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
发明人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
IPC分类号： G11B539
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3967 , G11B2005/0002 , G11B2005/0016 , G11B2005/3996 , H01F10/324 , H01F10/3254 , H01F10/3268 , H01L43/08 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49155
摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semicondutor or an antiferromagnetic material against the magnetic layers, and the magneto-resistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
摘要翻译：磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件具有至少形成在相对的磁体上的端子层，使得电流在中间层中流动。构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场穿透特性，穿过中间层。

6. 发明授权

US07159303B2 Method for manufacturing magnetic head device 失效
标题翻译：制造磁头装置的方法
公开(公告)号：US07159303B2
公开(公告)日：2007-01-09
申请号：US11371244
申请日：2006-03-09
申请人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
发明人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
IPC分类号： G11B5/127
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3967 , G11B2005/0002 , G11B2005/0016 , G11B2005/3996 , H01F10/324 , H01F10/3254 , H01F10/3268 , H01L43/08 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49155
摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
摘要翻译：磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子，使得电流在中间层中流动。构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场穿透特性，穿过中间层。

7. 发明授权

US06687099B2 Magnetic head with conductors formed on endlayers of a multilayer film having magnetic layer coercive force difference 失效
标题翻译：具有形成在具有磁性层矫顽力差的多层膜的端层上的导体的磁头
公开(公告)号：US06687099B2
公开(公告)日：2004-02-03
申请号：US10270120
申请日：2002-10-15
申请人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
发明人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
IPC分类号： G11B539
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3967 , G11B2005/0002 , G11B2005/0016 , G11B2005/3996 , H01F10/324 , H01F10/3254 , H01F10/3268 , H01L43/08 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49155
摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
摘要翻译：磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子，使得构成磁阻效应元件的所有磁性层基本上与磁记录介质的记录表面成直角相对。因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场穿透特性，穿过中间层。

8. 发明授权

US06483677B2 Magnetic disk apparatus including magnetic head having multilayered reproducing element using tunneling effect 失效
标题翻译：磁盘装置包括使用隧道效应的具有多层再生元件的磁头
公开(公告)号：US06483677B2
公开(公告)日：2002-11-19
申请号：US09931897
申请日：2001-08-20
申请人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
发明人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
IPC分类号： G11B539
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3967 , G11B2005/0002 , G11B2005/0016 , G11B2005/3996 , H01F10/324 , H01F10/3254 , H01F10/3268 , H01L43/08 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49155
摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
摘要翻译：磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子，使得电流在中间层中流动。构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场穿透特性，穿过中间层。

9. 发明授权

US6011674A Magnetoresistance effect multilayer film with ferromagnetic film sublayers of different ferromagnetic material compositions 失效
标题翻译：具有不同铁磁材料组成的铁磁膜子层的磁阻效应多层膜
公开(公告)号：US6011674A
公开(公告)日：2000-01-04
申请号：US626333
申请日：1996-04-02
申请人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
发明人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
IPC分类号： G01R33/09 , G11B5/39 , H01F10/32 , H01L43/08 , G11B5/33
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3967 , H01F10/324 , H01F10/3254 , H01F10/3268 , H01L43/08 , G11B2005/0002 , G11B2005/0016 , G11B2005/3996 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49155
摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-denisity recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
摘要翻译：磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子，使得电流在中间层中流动。构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。因此，可以极大地降低与磁记录介质的记录表面相对的磁性层的面积，因此可以通过具有一个磁记录介质的电流来检测来自高耐度记录磁记录介质的非常狭窄区域的磁场穿透特性，穿过中间层。

10. 发明授权

US5726837A Multilayer magnetoresistance effect-type magnetic head 失效
标题翻译：多层磁阻效应式磁头
公开(公告)号：US5726837A
公开(公告)日：1998-03-10
申请号：US328090
申请日：1994-10-24
申请人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
发明人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
IPC分类号： G01R33/09 , G11B5/39 , H01F10/32 , H01L43/08 , G11B5/33
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3967 , H01F10/324 , H01F10/3254 , H01F10/3268 , H01L43/08 , G11B2005/0002 , G11B2005/0016 , G11B2005/3996 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49155
摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
摘要翻译：磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子，使得电流在中间层中流动。构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场穿透特性，穿过中间层。

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