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1. 发明授权

US5944890A Method of producing single crystals and a seed crystal used in the method 失效
标题翻译：该方法中使用的单晶和晶种的制造方法
公开(公告)号：US5944890A
公开(公告)日：1999-08-31
申请号：US829449
申请日：1997-03-28
申请人： Yasuo Kitou , Naohiro Sugiyama , Atsuto Okamoto , Toshihiko Tani , Nobuo Kamiya
发明人： Yasuo Kitou , Naohiro Sugiyama , Atsuto Okamoto , Toshihiko Tani , Nobuo Kamiya
IPC分类号： C30B23/00 , C30B25/18 , C30B25/02
CPC分类号： C30B25/18 , C30B23/00 , C30B23/002 , C30B29/36
摘要： In a method of producing single crystals on a seed crystal, the seed crystal is covered by a protection layer except for a surface on which the single crystals are to be formed. The protection layer is made of material such as carbon or the like, which is stable in a step of forming the single crystals. As a result, a temperature gradient and mass transfer in the seed crystal can be prevented, whereby quality of the single crystals formed on the seed crystal can be improved.
摘要翻译：在晶种上制造单晶的方法中，除了要在其上形成单晶的表面之外，晶种被保护层覆盖。保护层由碳等形成，在形成单晶的工序中是稳定的。结果，可以防止晶种中的温度梯度和质量传递，从而可以提高在晶种上形成的单晶的质量。

2. 发明授权

US5964944A Method of producing silicon carbide single crystal 失效
标题翻译：生产碳化硅单晶的方法
公开(公告)号：US5964944A
公开(公告)日：1999-10-12
申请号：US820888
申请日：1997-03-21
申请人： Naohiro Sugiyama , Atsuto Okamoto , Toshihiko Tani , Nobuo Kamiya
发明人： Naohiro Sugiyama , Atsuto Okamoto , Toshihiko Tani , Nobuo Kamiya
IPC分类号： C30B25/20 , C30B23/00 , C30B25/00 , C30B29/36 , H01L21/205
CPC分类号： C30B23/00 , C30B25/00 , C30B29/36 , Y10S117/902 , Y10S438/931
摘要： An easy and low-cost method of producing a large-size and high-purity silicon carbide (SiC) single crystal includes reacting silicon vapor directly with a carbon-containing compound gas under a heated atmosphere (growth space 14) to grow a silicon carbide single crystal (15) on a silicon carbide seed crystal (12), in which the silicon vapor generated from molten silicon (13) is used as a silicon vapor source, and a hydrocarbon gas (9) (e.g., propane gas) is used as the carbon-containing compound gas.
摘要翻译：制造大尺寸和高纯度碳化硅（SiC）单晶的简单且低成本的方法包括在加热的气氛（生长空间14）下使硅蒸气与含碳化合物气体直接反应，以生长碳化硅使用从熔融硅（13）产生的硅蒸气作为硅蒸气源的碳化硅晶种（12）上的单晶（15），使用烃气（9）（例如丙烷气）作为含碳化合物气体。

3. 发明授权

US06214108B1 Method of manufacturing silicon carbide single crystal and silicon carbide single crystal manufactured by the same 有权
标题翻译：制造碳化硅单晶和碳化硅单晶的方法
公开(公告)号：US06214108B1
公开(公告)日：2001-04-10
申请号：US09318646
申请日：1999-05-26
申请人： Atsuto Okamoto , Naohiro Sugiyama , Toshihiko Tani , Nobuo Kamiya , Hiroaki Wakayama , Yoshiaki Fukushima , Kazukuni Hara , Fusao Hirose , Shoichi Onda , Kunihiko Hara , Takashi Onoda , Haruyoshi Kuriyama , Takeshi Hasegawa
发明人： Atsuto Okamoto , Naohiro Sugiyama , Toshihiko Tani , Nobuo Kamiya , Hiroaki Wakayama , Yoshiaki Fukushima , Kazukuni Hara , Fusao Hirose , Shoichi Onda , Kunihiko Hara , Takashi Onoda , Haruyoshi Kuriyama , Takeshi Hasegawa
IPC分类号： C30B2502
CPC分类号： C30B23/00 , C30B29/36 , C30B33/00
摘要： Micropipe defects existing in a silicon carbide single crystal are closed within the single crystal. At least a portion of the micropipe defects opened on the surface of the silicon carbide single crystal (SiC substrate) is sealed up with a coating material. Then heat treatment is performed so as to saturate the inside of the micropipe defects with silicon carbide vapors. By this, the micropipe defects existing in the SiC substrate can be closed within the SiC substrate, not in a newly grown layer. Further, the micropipe defects can be efficiently closed by filling the micropipe defects with a silicon carbide material by preliminarily using super critical fluid and the like.
摘要翻译：存在于碳化硅单晶中的微管缺陷在单晶内闭合。在碳化硅单晶（SiC衬底）的表面上打开的微管缺陷的至少一部分用涂料密封。然后进行热处理，以便用碳化硅蒸气使微管缺陷的内部饱和。由此，存在于SiC衬底中的微管缺陷可以在SiC衬底内封闭，而不是在新生长的层中。此外，通过预先使用超临界流体等，通过用碳化硅材料填充微管缺陷可以有效地关闭微管缺陷。

4. 发明授权

US06692652B2 Grain oriented ceramics 有权
标题翻译：颗粒取向陶瓷
公开(公告)号：US06692652B2
公开(公告)日：2004-02-17
申请号：US10127762
申请日：2002-04-23
申请人： Hisaaki Takao , Yasuyoshi Saito , Toshihiko Tani
发明人： Hisaaki Takao , Yasuyoshi Saito , Toshihiko Tani
IPC分类号： C04B35495
CPC分类号： C04B35/645 , C01G29/006 , C01G33/006 , C01P2002/20 , C01P2002/34 , C01P2002/70 , C01P2002/72 , C01P2004/03 , C01P2004/20 , C01P2004/54 , C01P2004/61 , C01P2006/10 , C01P2006/40 , C04B35/495 , C04B35/6455 , C04B2235/3201 , C04B2235/3203 , C04B2235/3251 , C04B2235/3255 , C04B2235/3294 , C04B2235/3298 , C04B2235/444 , C04B2235/5292 , C04B2235/5296 , C04B2235/5436 , C04B2235/6025 , C04B2235/604 , C04B2235/656 , C04B2235/6567 , C04B2235/762 , C04B2235/768 , C04B2235/787 , H01L41/187
摘要： Grain oriented ceramics constituted of a polycrystalline body having a first perovskite-type alkali-pentavalent metal oxide compound as the main phase, in which a specific crystal plane of each grain constituting the polycrystalline body is oriented. The grain oriented ceramics are obtained by molding a mixture of a first anisotropically-shaped powder A of which developed plane has a lattice matching with a specific crystal plane of the first perovskite-type alkali-pentavalent metal oxide compound and a first reaction material capable of reacting with the first anisotropically-shaped powder A thereby forming at least the first perovskite-type alkali-pentavalent metal oxide compound such that the first anisotropically-shaped powder A is oriented, and by heating them.
摘要翻译：晶粒取向陶瓷由具有第一钙钛矿型碱金属五价金属氧化物化合物作为主相的多晶体构成，其中构成多晶体的每个晶粒的特定晶面被定向。晶粒取向陶瓷是通过将第一各向异性形状的粉末A与第一钙钛矿型碱金属 - 五价金属氧化物的特定晶面具有格子匹配的第一各向异性粉末A和能够与第一各向异性粉末A反应，从而形成至少第一钙钛矿型碱金属五价金属氧化物化合物，使得第一各向异性形状的粉末A取向，并加热它们。

5. 发明授权

US06616523B1 Vehicle air conditioner and ceiling structure for air-conditioned vehicle 有权
标题翻译：空调车辆空调和天花板结构
公开(公告)号：US06616523B1
公开(公告)日：2003-09-09
申请号：US09714274
申请日：2000-11-17
申请人： Toshihiko Tani , Yasuyuki Koma
发明人： Toshihiko Tani , Yasuyuki Koma
IPC分类号： B60H126
CPC分类号： B60H1/3414 , B60H1/247
摘要： Air-accumulating chamber of a roof air duct has a non-branched configuration and is located substantially centrally in a widthwise direction of a vehicle. Air emission port sections emit conditioned air from the air-accumulating chamber toward respective rear seats. In each of the air emission port sections, a sawtooth-like surface is formed on each port base member and a resilient locking protrusion is provided on a grill for meshing engagement with the sawtooth-like surface. Air emission port, air-conditioner operating section and room lamp are provided together as a unit on the port base member.
摘要翻译：屋顶风道的蓄气室具有非分支构造，并且大致位于车辆宽度方向的中央。空气排放口部分从空气积聚室向相应的后座排放调节空气。在每个空气排出口部分中，在每个端口基座部件上形成锯齿形表面，并且在格栅上设置有弹性锁定突起，用于与锯齿状表面啮合。空气排放口，空调器操作部和室内灯作为一个单元一起设置在端口基座部件上。

6. 发明授权

US5108965A Method of manufacturing a silicon carbide-based material 失效
标题翻译：制造基于碳化硅的材料的方法
公开(公告)号：US5108965A
公开(公告)日：1992-04-28
申请号：US747499
申请日：1991-08-19
申请人： Toshihiko Tani , Shigetaka Wada
发明人： Toshihiko Tani , Shigetaka Wada
IPC分类号： C04B35/565 , C01B31/36 , C04B35/575
CPC分类号： C04B35/575
摘要： A composition of raw materials comprising silicon carbide, a substance containing at least one of Group IVa to VIa elements except any boride thereof, and a substance containing boron except any of the borides of Group IVa to VIa elements, and further containing, if required, carbon, or an organic compound which produces carbon as a result of thermal decomposition, or both, is fired to manufacture a silicon carbide-based material in which a boride of at least one of the elements of Groups IVa to VIa of the periodic table is dispersed. The silicon carbide-based material can be manufactured without using any of the borides of Group IVa to VIa elements as a starting material.

7. 发明授权

US4925815A Silicon carbide composite ceramic 失效
标题翻译：碳化硅复合陶瓷
公开(公告)号：US4925815A
公开(公告)日：1990-05-15
申请号：US310469
申请日：1989-02-15
申请人： Toshihiko Tani , Shigetaka Wada
发明人： Toshihiko Tani , Shigetaka Wada
IPC分类号： C04B35/565 , C04B35/575 , C04B35/645 , C04B35/80
CPC分类号： C04B35/575 , C04B35/645 , C04B35/806
摘要： A high-toughness silicon carbide composite ceramic comprising silicon carbide, 5 to 50 vol % of graphite whiskers, and sintering aid, and a method for producing the composite ceramic. The composite ceramic has high-temperature strength and fracture toughness value, and also has electrical conductivity.
摘要翻译：包含碳化硅，5〜50体积％的石墨晶须和烧结助剂的高韧性碳化硅复合陶瓷，以及复合陶瓷的制造方法。复合陶瓷具有高温强度和断裂韧性值，并且还具有导电性。

8. 发明授权

US06315354B1 Automotive air duct and garnish structure 有权
标题翻译：汽车风管和装饰结构
公开(公告)号：US06315354B1
公开(公告)日：2001-11-13
申请号：US09721655
申请日：2000-11-27
申请人： Toshihiko Tani , Yasuyuki Koma
发明人： Toshihiko Tani , Yasuyuki Koma
IPC分类号： B60J7000
CPC分类号： B60H1/00207 , B60H1/247 , B60H1/3428 , B60R13/0225 , B60R13/025 , B60R2013/0287
摘要： A portion 12a of a side duct 12 which is closer to a quarter glass 61 is formed into a convex cross-sectional portion protruding outwardly of the duct 12, and a rear garnish 63 is wrapped around the convex cross-sectional portion, whereby an end portion 63b of the rear garnish 63 which is closer to a quarter glass 61 is made closer to a rear pillar 62.
摘要翻译：更靠近四分之一玻璃61的侧管道12的部分12a形成为从管道12向外突出的凸形横截面部分，并且后部装饰件63缠绕在凸形横截面部分上，由此端部靠近四分之一玻璃61的后装饰件63的部分63b更靠近后支柱62。

9. 发明授权

US6093338A Crystal-oriented ceramics, piezoelectric ceramics using the same, and methods for producing the same 有权
标题翻译：晶体取向陶瓷，使用其的压电陶瓷及其制造方法
公开(公告)号：US6093338A
公开(公告)日：2000-07-25
申请号：US136420
申请日：1998-08-20
申请人： Toshihiko Tani , Tsuguto Takeuchi , Yasuyoshi Saito
发明人： Toshihiko Tani , Tsuguto Takeuchi , Yasuyoshi Saito
IPC分类号： G01L1/16 , C04B35/00 , C04B35/46 , C04B35/462 , C04B35/495 , H01L41/187 , C04B35/475 , C04B35/491 , C04B35/622
CPC分类号： C04B35/495 , C04B35/462 , H01L41/1871 , H01L41/1878 , H01L41/43
摘要： A crystal-oriented ceramic has an isotropic or pseudoisotropic perovskite-type-structure of not smaller than 10% in Lotgering orientation degree. The ceramic may contain at least one of Bi, Sr and Ca. A host material, a raw material capable of producing a guest material and an additive having the ability of converting a host material into a guest material are mixed and roll-pressed, and sintered under heat to give the crystal-oriented ceramic as a large-sized and bulky material. This crystal-oriented ceramic has good crystal orientation-dependent characteristics including piezoelectricity, pyroelectricity, ionic conductivity, giant magneto-resistivity effect, etc. This crystal-oriented ceramic can be produced by orienting epitaxially the polycrystals of an isotropic or pseudoisotropic perovskite oxide according to the orientation of the crystal plane or axis of a host material. The ceramic can be applied to an inexpensive and large-sized device. The host material may be a magnetoplumbite-type-structured or Sr.sub.2 Nb.sub.2 O.sub.7 -type-structured material, and may be composed of morphologically-anisotropic grains.
摘要翻译：晶体取向陶瓷具有不等于10％的Lotogering取向度的各向同性或拟各向异性的钙钛矿型结构。陶瓷可能含有Bi，Sr和Ca中的至少一种。将主体材料，能够生产客体材料的原料和具有将主体材料转化为客体材料的能力的添加剂混合并辊压，并在加热下烧结，得到晶体取向陶瓷作为大尺寸陶瓷，尺寸和体积大的材料。这种晶体取向陶瓷具有良好的晶体取向特性，包括压电性，热电性，离子导电性，巨磁阻效应等。该晶体取向陶瓷可以通过外延取向各向同性或拟各向异性的钙钛矿氧化物的多晶根据主体材料的晶面或轴的取向。陶瓷可以应用于廉价和大尺寸的装置。主体材料可以是磁铅石型结构或Sr2Nb2O7型结构材料，并且可以由形态各向异性晶粒组成。

10. 发明授权

US5081077A Process for producing sintered body of metal boride and raw material composition therefor 失效
标题翻译：金属硼化物烧结体的制造方法及其原料组成
公开(公告)号：US5081077A
公开(公告)日：1992-01-14
申请号：US681645
申请日：1991-04-08
申请人： Toshihiko Tani , Shigetaka Wada
发明人： Toshihiko Tani , Shigetaka Wada
IPC分类号： C04B35/58
CPC分类号： C04B35/58071 , C04B35/563 , C04B35/58064 , C04B35/58078 , C04B35/645
摘要： A process for producing a metal boride sintered body having a density of at least 90% of the theoretical density and a raw material composition therefor. The raw material composition is composed of a metal oxide, a metal carbide, and boron carbide, the amount of boron carbide being 5 to 20% more than the amount stoichiometrically required to form a metal boride by reaction of boron in the boron carbide with the metal element(s) in the metal oxide and metal carbide. By using this composition, it is possible to produce a metal boride sintered body having high density and high hardness without adding a sintering auxiliary or carbon and using a very high pressure.
摘要翻译：一种密度为理论密度的至少90％的金属硼化物烧结体的制造方法及其原料组成。原料组成由金属氧化物，金属碳化物和碳化硼组成，碳化硼的量比通过碳化硼中的硼的反应形成金属硼化物所需的化学计量量的5〜20％金属氧化物中的金属元素和金属碳化物。通过使用该组合物，可以制造具有高密度和高硬度的金属硼化物烧结体，而不添加烧结助剂或碳并且使用非常高的压力。

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