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1. 发明申请

US20100221155A1 Sterilization/Aseptization Apparatus 审中-公开
标题翻译：灭菌/消毒装置
公开(公告)号：US20100221155A1
公开(公告)日：2010-09-02
申请号：US12084038
申请日：2006-10-24
申请人： Naohiro Shimizu , Masahiro Wakita , Yuichiro Imanishi
发明人： Naohiro Shimizu , Masahiro Wakita , Yuichiro Imanishi
IPC分类号： A61L2/02 , B01J19/12 , A61L2/10 , A61L2/14
CPC分类号： A61L2/10 , A61L2/14
摘要： An aseptization apparatus 1 includes a sealed container 11 forming an aseptization space 191, a nitrogen gas supplying system 12 for converting atmosphere of the aseptization space 191 into nitrogen atmosphere, an electrode pair 13 disposed in the aseptization space 191, a pulse power supply 14 for repeatedly applying an electric pulse to the electrode pair 13, and a mirror 15 for returning a short-wavelength ultraviolet ray going from inside of the aseptization space 191 to outside to inside of the aseptization space 191. In a state where an aseptization object substance ST1 is present in a plasma generation region 192 between the electrode pair 13, the aseptization apparatus 1 causes a pulse electric field generated by electric pulse application to the electrode pair 13, a nitrogen radical 195 contained in plasma generated in nitrogen atmosphere resulting from fine streamer discharge, and a short-wavelength ultraviolet ray 196 emitted by nitrogen atmosphere resulting from fine streamer discharge to act on bacteria for aseptization of the aseptization object substance ST1.
摘要翻译：无菌化装置1包括形成无菌空间191的密闭容器11，将无菌空间191的气氛转换成氮气的氮气供给系统12，设置在无菌空间191内的电极对13，用于向电极对13反复施加电脉冲，以及将从无菌化空间191的内部返回的短波长的紫外线返回到无菌化空间191的外部至内部的反射镜15.在无菌化物质ST1 存在于电极对13之间的等离子体产生区域192中，无菌化装置1使通过电脉冲施加到电极对13产生的脉冲电场，由氮气气氛中产生的等离子体中产生的细流光放电产生的氮自由基195 和由细流引起的氮气气体发射的短波长紫外线196 排出作用于细菌以对无菌物质ST1进行无菌化处理。

2. 发明申请

US20080245478A1 Surface treatment apparatus 审中-公开
标题翻译：表面处理装置
公开(公告)号：US20080245478A1
公开(公告)日：2008-10-09
申请号：US12081913
申请日：2008-04-23
申请人： Eiki Hotta , Naohiro Shimizu , Yuichiro Imanishi
发明人： Eiki Hotta , Naohiro Shimizu , Yuichiro Imanishi
IPC分类号： C23F1/00 , C23C16/448
CPC分类号： H01J37/32706 , H01J37/32009 , H01J37/3233 , H05H1/2406 , H05H2001/2412
摘要： A surface treatment apparatus encompasses a gas introducing system configured to introduce a process gas from downstream end of a tubular treatment object; a vacuum evacuating system configured to evacuate the process gas from other end of the treatment object; an excited particle supplying system disposed at upstream side of the treatment object, configured to supply excited particles for inducing initial discharge in a main body of the treatment object; and a first main electrode and a second main electrode disposed oppositely to each other, defining a treating region of the treatment object as a main plasma generating region disposed therebetween, wherein the excited particle supplying system is driven at least until generation of main plasma, and main pulse of duty ratio of 10−7 to 10−1 is applied across the first main electrode and second main electrode, to generate a non-thermal equilibrium plasma flow in the inside of the treatment object, and thereby an inner surface of the treatment object is treated.
摘要翻译：表面处理装置包括：气体导入系统，其构造成从管状处理对象的下游端引入处理气体; 真空排气系统，其构造成从处理对象的另一端抽出处理气体; 设置在处理对象的上游侧的激发粒子供给系统，被配置为在被处理体的主体内供给用于引发初始排出的激发粒子; 以及相对设置的第一主电极和第二主电极，将处理对象的处理区域设定为设置在其间的主等离子体产生区域，其中所述激发粒子供给系统至少被驱动至主等离子体的产生，以及在第一主电极和第二主电极上施加10 -7至10 -6的主脉冲占空比，以在第一主电极和第二主电极中产生非热平衡等离子体流在处理对象内部，从而处理对象的内表面。

3. 发明授权

US08545765B2 Plasma treating apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US08545765B2
公开(公告)日：2013-10-01
申请号：US13450853
申请日：2012-04-19
申请人： Wataru Shionoya , Naohiro Shimizu , Yuichiro Imanishi , Sozaburo Hotta
发明人： Wataru Shionoya , Naohiro Shimizu , Yuichiro Imanishi , Sozaburo Hotta
IPC分类号： B01J19/08
CPC分类号： B01J19/088 , B01J2219/0811 , B01J2219/0813 , B01J2219/0815 , B01J2219/083 , B01J2219/0835 , B01J2219/0841 , B01J2219/0875 , B01J2219/0894 , H05H1/2406 , H05H2001/2412 , H05H2240/10
摘要： A first electrode, a second electrode and a third electrode are provided in a middle of a passage. The second electrode is provided on an upstream side of the first electrode, and the third electrode is provided on a downstream side of the first electrode. A connecting line connects the first electrode to a first pole of a pulsed power supply, and connects the second electrode and the third electrode to a second pole of the pulsed power supply. The first electrode crosses a first gas passing surface and occupies a part of the first gas passing surface. The second electrode and the third electrode cross a second gas passing surface and a third gas passing surface and occupy a part of the second gas passing surface and the third gas passing surface respectively.
摘要翻译：第一电极，第二电极和第三电极设置在通路的中间。第二电极设置在第一电极的上游侧，第三电极设置在第一电极的下游侧。连接线将第一电极连接到脉冲电源的第一极，并将第二电极和第三电极连接到脉冲电源的第二极。第一电极穿过第一气体通过表面并占据第一气体通过表面的一部分。第二电极和第三电极与第二气体通过面和第三气体通过面交叉，分别占据第二气体通过面和第三气体通过面的一部分。

4. 发明申请

US20080193330A1 surface treatment apparatus 审中-公开
标题翻译：表面处理装置
公开(公告)号：US20080193330A1
公开(公告)日：2008-08-14
申请号：US11826957
申请日：2007-07-19
申请人： Eiki Hotta , Naohiro Shimizu , Yuichiro Imanishi
发明人： Eiki Hotta , Naohiro Shimizu , Yuichiro Imanishi
IPC分类号： A61L2/14
CPC分类号： H01J37/3244 , H01J37/32009
摘要： A surface treatment apparatus encompasses a gas introducing system configured to introduce a process gas from one end of a tubular treatment object; a vacuum evacuating system configured to evacuate the process gas from other end of the treatment object; an excited particle supplying system disposed at the gas supply upstream side to the treatment object, configured to supply excited particles for inducing initial discharge in a main body of the treatment object; and a first main electrode and a second main electrode disposed oppositely to each other, defining a treating region of the treatment object as a main plasma generating region disposed therebetween, wherein the excited particle supplying system is driven at least until generation of main plasma, and main pulse of duty ratio of 10−7 to 10−1 is applied between the first main electrode and second main electrode, to generate a non-thermal equilibrium plasma flow inside the treatment object, and thereby an inner surface of the treatment object is treated.
摘要翻译：表面处理装置包括：气体导入系统，其构造成从管状处理物体的一端引入处理气体; 真空排气系统，其构造成从处理对象的另一端抽出处理气体; 设置在处理对象的气体供给上游侧的激发粒子供给系统，被配置为在被处理体的主体中供给用于引发初始排出的激发粒子; 以及相对设置的第一主电极和第二主电极，将处理对象的处理区域设定为设置在其间的主等离子体产生区域，其中所述激发粒子供给系统至少被驱动至主等离子体的产生，以及在第一主电极和第二主电极之间施加占空比为10 -7至10 -1的主脉冲，以在第一主电极和第二主电极之间产生非热平衡等离子体流处理对象，从而处理对象的内表面。

5. 发明申请

US20080159925A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20080159925A1
公开(公告)日：2008-07-03
申请号：US11826948
申请日：2007-07-19
申请人： Naohiro Shimizu , Yuichiro Imanishi
发明人： Naohiro Shimizu , Yuichiro Imanishi
IPC分类号： B01J19/12
CPC分类号： A61L2/14 , A61L2/10 , H05H1/2406 , H05H2001/2412 , H05H2245/1225
摘要： This invention concerns with the plasma inactivating method and processor that can inactivate the surface of the object without causing the degradation inside of it. The inactivation of toxins on the surface of the object proceeds as removing the toxins by nitriding or oxidizing the toxins by the following triple effects, the sharp pulsed electric field by the supply of the electric pulses, the generated N-radicals (N*) contained inside of the plasma in the surrounding gases composed mainly by N2 gas under the low pressure.
摘要翻译：本发明涉及等离子体灭活方法和处理器，其可以使物体的表面失活而不会导致其内部的退化。物体表面上的毒素灭活是通过以下三重效应对毒素进行氮化或氧化来除去毒素，通过供给电脉冲产生的尖锐脉冲电场，产生的N-自由基（N *）含有在低压下主要由N 2 O 2气体组成的周围气体中的等离子体内部。

6. 发明授权

US08241580B2 Plasma processing methods for inactivating toxins 有权
标题翻译：用于灭活毒素的等离子体处理方法
公开(公告)号：US08241580B2
公开(公告)日：2012-08-14
申请号：US12929412
申请日：2011-01-21
申请人： Naohiro Shimizu , Yuichiro Imanishi
发明人： Naohiro Shimizu , Yuichiro Imanishi
IPC分类号： B01J19/08
CPC分类号： A61L2/14 , A61L2/10 , H05H1/2406 , H05H2001/2412 , H05H2245/1225
摘要： This invention concerns with the plasma inactivating method and processor that can inactivate the surface of the object without causing the degradation inside of it. The inactivation of toxins on the surface of the object proceeds as removing the toxins by nitriding or oxidizing the toxins by the following triple effects, the sharp pulsed electric field by the supply of the electric pulses, the generated N-radicals (N*) contained inside of the plasma in the surrounding gases composed mainly by N2 gas under the low pressure.
摘要翻译：本发明涉及等离子体灭活方法和处理器，其可以使物体的表面失活而不会导致其内部的退化。物体表面上的毒素灭活是通过以下三重效应对毒素进行氮化或氧化来除去毒素，通过供给电脉冲产生的尖锐脉冲电场，产生的N-自由基（N *）含有内部等离子体中的周围气体主要由低压N2气体组成。

7. 发明申请

US20110135536A1 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US20110135536A1
公开(公告)日：2011-06-09
申请号：US12929412
申请日：2011-01-21
申请人： Naohiro Shimizu , Yuichiro Imanishi
发明人： Naohiro Shimizu , Yuichiro Imanishi
IPC分类号： A61L2/10
CPC分类号： A61L2/14 , A61L2/10 , H05H1/2406 , H05H2001/2412 , H05H2245/1225
摘要： This invention concerns with the plasma inactivating method and processor that can inactivate the surface of the object without causing the degradation inside of it. The inactivation of toxins on the surface of the object proceeds as removing the toxins by nitriding or oxidizing the toxins by the following triple effects, the sharp pulsed electric field by the supply of the electric pulses, the generated N-radicals (N*) contained inside of the plasma in the surrounding gases composed mainly by N2 gas under the low pressure.
摘要翻译：本发明涉及等离子体灭活方法和处理器，其可以使物体的表面失活而不会导致其内部的退化。物体表面上的毒素灭活是通过以下三重效应对毒素进行氮化或氧化来除去毒素，通过供给电脉冲产生的尖锐脉冲电场，产生的N-自由基（N *）含有内部等离子体中的周围气体主要由低压N2气体组成。

8. 发明授权

US06767434B1 Method of treating substance and apparatus for carrying out the same 失效
标题翻译：处理物质和装置的方法
公开(公告)号：US06767434B1
公开(公告)日：2004-07-27
申请号：US09669815
申请日：2000-09-26
申请人： Yuichiro Imanishi , Naohiro Shimizu , Shozo Ishii
发明人： Yuichiro Imanishi , Naohiro Shimizu , Shozo Ishii
IPC分类号： B01J1908
CPC分类号： B01D53/8609 , B01D53/32 , B01D53/8625 , B01D53/8637 , B01D53/8662 , B01D53/8678 , B01J19/088 , B01J19/2485 , B01J2219/0002 , B01J2219/0809 , B01J2219/0824 , B01J2219/0828 , B01J2219/083 , B01J2219/0849 , B01J2219/0894 , H05H1/48 , H05H2001/481 , H05H2245/1215
摘要： An apparatus for treating harmful substances contained in a waste gas discharged from waste burning pants includes an insulating honeycomb structural body made of ceramics containing a photocatalytic material, a number of through holes formed in the honeycomb structural body in parallel with each other, first and second mesh electrodes arranged on respective end surfaces of the honeycomb structural body, and a pulse supply source connected across the first and second mesh electrodes. A waste gas flows through the through holes formed in the honeycomb structural body, while pulse corona discharge plasma is uniformly generated along the through holes. Harmful substances contained in the waste gas are decomposed by the high energy electrons and radicals generated by the discharge plasma, and the photocatalytic material is excited by ultraviolet radiation emitted from the discharge plasma to produce active oxygen which decomposes and/or oxidizes the harmful substances.
摘要翻译：用于处理从废燃烧裤子排出的废气中所含有害物质的装置包括由包含光催化材料的陶瓷制成的绝缘蜂窝结构体，在蜂窝结构体中彼此平行地形成的多个通孔，第一和第二布置在蜂窝结构体的相应端面上的网状电极以及连接在第一和第二网状电极两端的脉冲供给源。废气流过形成在蜂窝结构体中的通孔，沿着通孔均匀地产生脉冲电晕放电等离子体。包含在废气中的有害物质被放电等离子体产生的高能电子和自由基分解，光催化材料被从放电等离子体发射的紫外线辐射激发，产生分解和/或氧化有害物质的活性氧。

9. 发明授权

US06403988B2 Semiconductor device with reverse conducting faculty 失效
标题翻译：具有反向传导技术的半导体器件
公开(公告)号：US06403988B2
公开(公告)日：2002-06-11
申请号：US09776577
申请日：2001-02-02
申请人： Katsuji Iida , Takeshi Sakuma , Yuichiro Imanishi , Naohiro Shimizu
发明人： Katsuji Iida , Takeshi Sakuma , Yuichiro Imanishi , Naohiro Shimizu
IPC分类号： H01L2974
CPC分类号： H01L27/0817
摘要： A semiconductor device constructed as a reverse conducting static induction thyristor including a thyristor section 114 formed by an n− silicon substrate 101, p+ gate regions 102, 104 formed in one surface of the substrate, a p+ anode region 111 formed in the other surface of the substrate, a main diode section 134 having a cathode region formed by the silicon substrate and an anode region 131 formed in the one surface of the substrate, and a series arrangement 145 of diodes including plural p+ anode regions 142, plural n+ cathode contact regions 143 formed in the first surface of the substrate, and plural conductive layers 144 connecting these anode regions and cathode contact legions successively. An anode and a cathode of the series arrangement of diodes are connected to a cathode electrode 110 and an anode electrode 113 of the thyristor section. Each of diodes in the series arrangement has a breakdown voltage lower than that of the thyristor section.
摘要翻译：构成为反向导电静电感应晶闸管的半导体器件，包括形成在衬底的一个表面中的由n-硅衬底101，p +栅极区102,104形成的晶闸管部114，形成在衬底的另一个表面中的p +阳极区111 基板，具有由硅基板形成的阴极区域的主二极管部分134和形成在基板的一个表面中的阳极区域131以及包括多个p +阳极区域142的二极管的串联布置145，多个n +阴极接触区域 143和形成在基板的第一表面中的多个导体层144，以及连接这些阳极区域和阴极接触部分的多个导电层144。二极管串联布置的阳极和阴极连接到晶闸管部分的阴极电极110和阳极电极113。串联装置中的每个二极管的击穿电压低于晶闸管部分的击穿电压。

10. 发明授权

US5682044A Reverse conducting thyristor with a planar-gate, buried-gate, or recessed-gate structure 失效
标题翻译：具有平面栅极，掩埋栅极或凹入栅极结构的反向导通晶闸管
公开(公告)号：US5682044A
公开(公告)日：1997-10-28
申请号：US591420
申请日：1996-01-19
申请人： Takashige Tamamushi , Kimihiro Muraoka , Yoshiaki Ikeda , Keun Sam Lee , Naohiro Shimizu , Masashi Yura , Kinji Yoshioka
发明人： Takashige Tamamushi , Kimihiro Muraoka , Yoshiaki Ikeda , Keun Sam Lee , Naohiro Shimizu , Masashi Yura , Kinji Yoshioka
IPC分类号： H01L29/74 , H01L31/111
CPC分类号： H01L29/7416
摘要： The present invention provides a reverse conducting (RC) thyristor of a planar-gate structure for low-and-medium power use which is relatively simple in construction because of employing a planar structure for each of thyristor and diode regions, permits simultaneous formation of the both region and have high-speed performance and a RC thyristor of a buried-gate or recessed-gate structure which has a high breakdown voltage by the use of a buried-gate or recessed-gate structure, permits simultaneous formation of thyristor and diode regions and high-speed, high current switching performance, and the RC thyristor of the planar-gate structure has a construction which comprises an SI thyristor or miniaturized GTO of a planar-gate structure in the thyristor region and an SI diode of a planar structure in the diode region, the diode region having at its cathode side a Schottky contact between n emitters or diode cathode shorted region and the thyristor region having at its anode side an SI anode shorted structure formed by p.sup.+ anode layers, wave-shaped anode layers or anode n.sup.+ layers; in the case of a high breakdown device, an n buffer layer is added; similarly the RC thyristor of the buried-gate or recessed-gate structure has a construction which comprises an SI thyristor of a buried-gate or recessed-gate structure at the thyristor region and an SI diode of the buried or recessed structure.
摘要翻译：本发明提供了一种用于中低功率使用的平面栅极结构的反向导通（RC）晶闸管，由于采用晶体管和二极管区域中的每一个的平面结构，其结构相对简单，允许同时形成具有高速性能和通过使用掩埋栅极或凹入栅极结构具有高击穿电压的掩埋栅极或凹入栅极结构的RC晶闸管，允许同时形成晶闸管和二极管区域和高速，高电流开关性能，并且平面栅极结构的RC晶闸管具有在晶闸管区域中包括SI晶闸管或平面栅极结构的小型化GTO以及平面结构的SI二极管的结构二极管区域，二极管区域在其阴极侧具有n个发射极或二极管阴极短路区域之间的肖特基接触，并且在其阳极侧具有SI a的晶闸管区域由p +阳极层，波形阳极层或阳极n +层形成的短路结构; 在高击穿装置的情况下，添加n缓冲层; 类似地，埋入栅极或凹入栅极结构的RC晶闸管具有包括在晶闸管区域处的掩埋栅极或凹入栅极结构的SI晶闸管和埋入或凹陷结构的SI二极管的结构。

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