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    • 3. 发明申请
    • FILM FOR SEMICONDUCTOR DEVICE
    • 半导体器件薄膜
    • US20110074050A1
    • 2011-03-31
    • US12890909
    • 2010-09-27
    • Yasuhiro AmanoYuuichirou ShishidoKouichi Inoue
    • Yasuhiro AmanoYuuichirou ShishidoKouichi Inoue
    • B32B33/00H01L29/00
    • H01L21/67132Y10T428/14
    • The present invention provides a film for a semiconductor device, which is capable of preventing interface delamination between each of the films, a film lifting phenomenon, and transfer of the adhesive film onto the cover film even during transportation or after long-term storage in a low temperature condition. The film for a semiconductor device of the present invention is a film in which an adhesive film and a cover film are sequentially laminated on a dicing film, in which a peel force F1 between the adhesive film and the cover film in a T type peeling test is within a range of 0.025 to 0.075 N/100 mm, a peel force F2 between the adhesive film and the dicing film is within a range of 0.08 to 10 N/100 mm, and F1 and F2 satisfy a relationship of F1
    • 本发明提供一种半导体装置用薄膜,其能够防止各膜之间的界面分层,膜提起现象,以及即使在运输过程中或长期储存后也将胶粘剂膜转印到覆盖膜上 低温条件。 本发明的半导体装置用薄膜是将粘接薄膜和覆盖薄膜依次层叠在切断薄膜上的薄膜,在T型剥离试验中粘合薄膜与覆盖薄膜的剥离力F1 在0.025〜0.075N / 100mm的范围内,粘合膜与切割膜之间的剥离力F2在0.08〜10N / 100mm的范围内,F1和F2满足F1